公开(公告)号：JP2003101149A

公开(公告)日：2003-04-04

申请号：JP2001285674

申请日：2001-09-19

Applicant: TOSHIBA CORP

Inventor： SUZUKI MARIKO ,  ONOMURA MASAAKI ,  NUNOGAMI SHINYA ,  SAITO SHINJI ,  HONGO SADAHITO ,  IIDA SUSUMU ,  SAKAI TADASHI ,  ONO TOMIO ,  SAKUMA HISASHI

IPC: H01L21/205 ,  H01S5/183 ,  H01S5/22 ,  H01S5/323 ,  H01S5/343

Abstract: PROBLEM TO BE SOLVED: To improve reliability of a semiconductor element comprising a hetero junction structure by decreasing penetrating dislocation density penetrating in the growth direction. SOLUTION: This element has a structure comprising a sapphire substrate 100 overlaid with a GaN buffer layer 101, a bonded polarity inverted layer 102, an Alx Ga1-x N layer 103 and an n-GaN contact layer 104, as a basis. The bonded polarity inverted layer 102 is a layer to prevent propagation of dislocations D1 , D2 ,..., D8 from below, and the GaN layer 102 that is doped with magnesium (Mg) until getting high concentration equal to the solid solubility or more. In the bonded polarity inverted layer 102, a part of the periodical alignment of bonds composing crystal lattice is inverted. The Alx Ga1-x N layer 103 is a layer for flattening unevenness generated in the surface of the bonded polarity inverted layer 102.

公开(公告)号：JP2002203470A

公开(公告)日：2002-07-19

申请号：JP2000401174

申请日：2000-12-28

Applicant: TOSHIBA CORP

Inventor： SAKAI TADASHI ,  ONO TOMIO ,  SAKUMA HISASHI ,  CHO TOSHI

IPC: H01J29/04 ,  H01J1/304 ,  H01J31/12

Abstract: PROBLEM TO BE SOLVED: To improve the density of the emitted current which has been insufficient in a conventional device, with low electric field characteristic in an electron emitter using diamond. SOLUTION: This electron emitter includes a donor impurity element in a surface of a diamond layer 24, and has an emitter layer 25 for emitting the electron. A metallic cathode electrode 26 having the mesh shape is mounted on a surface for supplying the electron to the emitter layer 25. An anode electrode 32 is mounted oppositely to the emitter layer 25 at a side having the cathode electrode 26. A clearance between the emitter layer 25 and the anode electrode 32 is formed as a vacuum space 36 for moving the electron emitted from the emitter layer 25.

公开(公告)号：JP2002015658A

公开(公告)日：2002-01-18

申请号：JP2000199003

申请日：2000-06-30

Applicant: TOSHIBA CORP

Inventor： CHO TOSHI ,  SAKAI TADASHI ,  ONO TOMIO ,  SAKUMA HISASHI

IPC: B82B1/00 ,  H01J1/304 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12

Abstract: PROBLEM TO BE SOLVED: To provide an electric field emission type cold cathode device which can perform an electric field emission of high current intensity at an extremely low voltage. SOLUTION: An undoped diamond film 12 formed by CVD is laminated on a diamond substrate 11, and an n type diamond layer 13 is formed on a surface of diamond film 12. A surface layer 16 composed of a hydrogen terminal diamond layer formed by hydrogen adsorbed on a surface of the diamond layer 13 is arranged and installed at a position corresponding to a flat panel type emitter 1E. Further an insulating layer 14 composed of an oxygen-containing organic layer formed by oxidation treatment of the surface of diamond layer 13 is arranged and installed. A gate electrode 15 is arranged and installed on the insulating layer 14 to face the emitter 1E. An anode electrode 17 to oppose to the emitter 1E through an opening 19 is arranged and installed.

公开(公告)号：JP2000086216A

公开(公告)日：2000-03-28

申请号：JP25551598

申请日：1998-09-09

Applicant: TOSHIBA CORP

Inventor： CHO TOSHI ,  SAKAI TADASHI ,  ONO TOMIO ,  SAKUMA HISASHI

IPC: H01J9/02 ,  C01B31/02 ,  C23C16/26 ,  H01J1/304

Abstract: PROBLEM TO BE SOLVED: To obtain a stable large emission current by applying enough voltage on each emitter. SOLUTION: After a SiO2 film 2 and a gate layer 3 formed on a silicon substrate 1 have been patterned, an Fe thin film 5 is formed by sputtering and Fe dots 6 are formed simultaneously on the exposed surface of the silicon substrate 1. While a magnetic field is applied using an electromagnet 7 on the Fe dots 6 in the perpendicular direction to the silicon substrate 1 to attract the Fe dots 6, carbon nanotubes 8 are selectively grown between the Fe dots 6 and the silicon substrate 1 to form emitter electrodes.

公开(公告)号：JPH11154455A

公开(公告)日：1999-06-08

申请号：JP26525498

申请日：1998-09-18

Applicant: TOSHIBA CORP

Inventor： SAKUMA HISASHI ,  SAKAI TADASHI ,  ONO TOMIO ,  NAKAYAMA KAZUYA

IPC: H01J9/02 ,  H01J1/30 ,  H01J1/304

Abstract: PROBLEM TO BE SOLVED: To provide a new vacuum micro element and its manufacturing method, making the most of the characteristics in the case of using a diamond as an emitter. SOLUTION: A thermal oxidized layer 103 constituting a gate insulating layer is formed on a Si substrate 101 having a recess part 102 with a sharply pointed bottom, subsequently, an n-type diamond grated layer 104 constituting an emitter layer is formed on it. The Si substrate 101 is joined to a glass substrate 105 which is a second substrate, then the Si substrate 101 is removed by etching. After that, a gate electrode layer and the thermal oxidized film layer 103 constituting the gate insulating layer are sequentially etched in order to expose a protrusion of the n-type diamond grated layer 104 constituting the emitter layer, thus the diamond emitter is formed.

公开(公告)号：JPH1092300A

公开(公告)日：1998-04-10

申请号：JP24671496

申请日：1996-09-18

Applicant: TOSHIBA CORP

Inventor： NAKAMOTO MASAYUKI ,  ONO TOMIO ,  SAKAI TADASHI ,  SAKUMA HISASHI ,  SUZUKI TAKETOSHI

IPC: H01J9/02

Abstract: PROBLEM TO BE SOLVED: To manufacture many large area field emission type cold cathodes with high field emission efficiency and high uniformity at low cost. SOLUTION: In a manufacturing method for a field emission type cold cathode, a thermal oxide film 202 is formed on the surface of an Si substrate 201 having a recess whose bottom is sharpened, an emitter material layer 203 is formed on the substrate 201 containing the recess, and a supporting substrate 205 is stuck to the emitter material layer 203. The supporting substrate 205 having the emitter material layer 203 is used as an original substrate, and a resin substrate 207 having a recess whose bottom is sharpened by resin molding is formed, and an emitter material layer 213 is formed so as to bury the inside of the recess of the resin substrate 207 to form an emitter of a field emission type cold cathode. A structure substrate 215 for supporting the emitter material layer 213 is formed on the layer 213, and the resin substrate 207 is removed so as to expose the emitter material layer 213 integrated with the structure substrate 215.

公开(公告)号：JPH09204874A

公开(公告)日：1997-08-05

申请号：JP1103396

申请日：1996-01-25

Applicant: TOSHIBA CORP

Inventor： SAKAI TADASHI ,  ONO TOMIO ,  CHO TOSHI

IPC: H01J1/304 ,  H01J9/02 ,  H01J1/30

Abstract: PROBLEM TO BE SOLVED: To enhance the reproducibility of an emitter shape using Si as the material and accomplish a high gate insulativeness. SOLUTION: An n-type Si board 13 is equipped with an emitter 14 whose side face has a conical shape in an arc of circle. The side face of the emitter 14 is restricted by a Si oxide insulative layer 18 formed in the surface of the board 13. The insulative layer 18 is formed by such a process that the p-region in the surface of the board 13 is turned porous by means of positive electrode chemical formation, followed by heat oxidation. The insulative layer 18 and a gate electrode 16 provided over it are equipped with a recess 18a and opening 16a as mating with the foremost part 14a of the emiter 14. The diameter of the opening 16a is set to half the diameter of the bottom part of the emitter 14, while the depth of the recess 18a is set so that more than one half of the lower part of the emitter 14 is embedded in the insulative layer 18.

公开(公告)号：JPH09185941A

公开(公告)日：1997-07-15

申请号：JP35214995

申请日：1995-12-28

Applicant: TOSHIBA CORP

Inventor： ONO TOMIO ,  SAKAI TADASHI ,  CHO TOSHI ,  NAKAMOTO MASAYUKI

IPC: H01J9/02 ,  H01J1/30 ,  H01J1/304 ,  H01J29/04 ,  H01J31/12 ,  H01L21/8234 ,  H01L27/088

Abstract: PROBLEM TO BE SOLVED: To provide an electron emission device in which manufacturing is easy without deteriorating the integration degree of an emitter. SOLUTION: An electron emission device has a junction FET, and in the junction FET, an n -type layer 12 formed on the rear face of a Si substrate 11 becomes a source region, an emitter 20 becomes a drain region, and a p -type region 151 surrounding an (n)channel region 152 becomes a gate. When an voltage applied to an electrode 17 is adjusted, the width of a depletion layer extending from the pn junction of the M-type region 151 and n-type channel region 152 into the channel region 152 is changed. Accordingly, by adjusting the applied voltage to the electrode 17, an electron current approaching from the n -type layer 12 to the tip of the emitter 20 can be controlled.

公开(公告)号：JPH07254383A

公开(公告)日：1995-10-03

申请号：JP7015994

申请日：1994-03-15

Applicant: TOSHIBA CORP

Inventor： OKUMURA HARUHIKO ,  UCHIKOGA SHIYUUICHI ,  NAKAMOTO MASAYUKI ,  ONO TOMIO ,  HIGUCHI TOSHIHARU

IPC: H01J31/12 ,  G09G3/22 ,  G09G3/30 ,  H01J29/04 ,  H01J29/96 ,  H01J31/15 ,  H01L21/336 ,  H01L29/78 ,  H01L29/786

Abstract: PURPOSE:To provide a display with reduced deficiency even if the number of pixels is increased and without a drive transistor by constituting a thin film transistor(TFT) circuit of a single memory element and a single switch element. CONSTITUTION:A gate voltage of a switching transistor Tr1 in a TFT is driven on the basis of a scanning signal, to turn on all of one scanning line. Simultaneously, an image signal is inputted into a gate electrode 13 of an electric field emission cathode unit 2 from an image signal line through the transistor Tr1. This voltage is held for a time of one field by a holding capacitor C so that a phosphor housed inside a phosphor layer 5 emits light for display. Consequently, since only the transistor Tr1 can perform functions of a drive transistor and a picture element selecting transistor, it is possible to reduce an area of the TFT in a memory unit and deterioration of a display quality due to fluctuation in performance of an element.

公开(公告)号：JPH0636682A

公开(公告)日：1994-02-10

申请号：JP18675392

申请日：1992-07-14

Applicant: TOSHIBA CORP

Inventor： NAKAMOTO MASAYUKI ,  ONO TOMIO ,  SAKAI TADASHI

IPC: H01J1/304 ,  H01J9/02 ,  H01J31/12 ,  H01J1/30

Abstract: PURPOSE:To enhance the shape reproducibility and uniformity of an emitter and the controllability of the distance between gate and emitter and to easily enlarge the area where the emitter is formed. CONSTITUTION:A thermally oxidized insulating layer 13 is formed on a first substrate 11 having a recessed portion 12 the bottom portion of which is sharpened. As the inside of the recessed portion 12 is filled, a layer 14 of emitter material is formed on the thermally oxidized insulating layer 13. The first substrate 11 is joined to a second substrate 17 comprising a structural substrate. The first substrate 11 is removed by etching to expose the thermally oxidized insulating layer 13 and a projecting portion 18 corresponding to the emitter material filling the recessed portion is projected. A gate electrode layer 19 is formed on the thermally oxidized insulating layer 13 being exposed and then part of the thermally oxidized insulating layer 13 and the gate electrode layer 14 is removed to expose a projecting end portin 18a, to form an emitter 18.