公开(公告)号：JPH10256579A

公开(公告)日：1998-09-25

申请号：JP5952997

申请日：1997-03-13

Applicant: TOSHIBA CORP

Inventor： UCHIKOGA SHIYUUICHI ,  UEDA TOMOMASA ,  HARA YUJIRO

IPC: G02F1/133 ,  G02F1/1368 ,  G09F9/00 ,  H01L29/786 ,  H01L31/04

Abstract: PROBLEM TO BE SOLVED: To enhance the photoelectric conversion rate by providing a first electrode made of a linear conductive material, a semiconductor layer laminated coaxially with the first electrode to generate a potential difference between the inner and outer layers upon irradiation with light, and a second electrode formed on the opposite side to the first electrode. SOLUTION: An n-type semiconductor 12, an i-type semiconductor 13 and a p-type semiconductor 14 are deposited sequentially with a first electrode 11 as a central axis and a second electrode, i.e., a transparent electrode 15, is formed at the outer circumferential part. When such a photoelectric conversion element 10 is irradiated with light, a potential difference appears between the electrode 11 and the transparent electrode 15. The electrode 11 is formed of linear material. Each conductor covers other semiconductor with the electrode 11 as a central axis. Since the light receiving surface is formed over the entire circumference, light can be collected efficiently and the photoelectric conversion rate can be enhanced.

公开(公告)号：JPH1093090A

公开(公告)日：1998-04-10

申请号：JP24278596

申请日：1996-09-13

Applicant: TOSHIBA CORP

Inventor： YAMADA HIROSAKU ,  KIYOTA TOSHIYA ,  UCHIKOGA SHIYUUICHI

IPC: G02F1/136 ,  G02F1/1368 ,  H01L21/316 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To enable forming a coating, having a sufficient barrierability, even if a general resin material is used, by forming a semiconductor film in which an active layer for a semiconductor device has been formed, on an inorganic insulating film containing specified impurities on an organic resin substrate. SOLUTION: An acrylic resin substrate containing Na being an alkaline metal of a sufficient concentration is used. First, SiO2 2 of 30nm is deposited on a substrate 1 by 100 deg.C plasma CVD, using SiH4 and N2 O as materials. The formation condition is 120 deg.C. Following this, this substrate 1 is dipped in a 5% NaCl aqueous solution 3, put in a glass container 5 for 48 hours, is washed simply after that, and is dried subsequently to form a plastic substrate sufficiently polluted by Na. An SiO2 film 4 is deposited by 200nm with CVD, similarly to the SiO2 2 forming process. Next, As ions are used and implanted to a specified concentration with an acceleration energy of 40keV, it is possible to obtain a blocking ability with respect to alkaline metals by this coating.

公开(公告)号：JPH09251158A

公开(公告)日：1997-09-22

申请号：JP5968496

申请日：1996-03-15

Applicant: TOSHIBA CORP

Inventor： UCHIKOGA SHIYUUICHI ,  ATSUTA MASAKI ,  ASHIDA SUMIO

IPC: G02F1/1333 ,  G09F9/313

Abstract: PROBLEM TO BE SOLVED: To obtain a display device which is low in electric power consumption and has decreased crosstalks by including such insulative films which shares the voltage impressed an data lines at a lower ratio than in a liquid crystal layer and transparent conductive films disposed between these insulative films and the liquid crystal layer between discharge chambers and the liquid crystal layer. SOLUTION: The plasma address type liquid crystal display device constituted by forming discharge chambers 104 where plasma is generated as address lines and holding the liquid crystal layer 109 between these discharge chambers 104 and the data lines 111 intersecting therewith is formed with the discharge chambers 104 by a first substrate 101, partitions 102 and upper partitions 103. Such insulative film 107 which shares the voltage impressed on the data lines 111 at the ratio lower than the ratio of the liquid crystal layer 109 and the transparent conductive films 108 disposed between the insulative films 107 and the liquid crystal layer 109 are included between the discharge chambers 104 and the liquid crystal layer 109. The transparent conductive films 108 are insulated by the transparent insulative films 107 by each of the respective discharge chambers 104 and therefore, the crosstalks are prevented.

公开(公告)号：JPH07254355A

公开(公告)日：1995-10-03

申请号：JP4348494

申请日：1994-03-15

Applicant: TOSHIBA CORP

Inventor： UCHIKOGA SHIYUUICHI ,  OKUMURA HARUHIKO ,  NAKAMOTO MASAYUKI ,  ONO TOMIO ,  HIGUCHI TOSHIHARU

IPC: H01J29/87 ,  H01J1/30 ,  H01J1/304 ,  H01J5/03 ,  H01J31/12 ,  H01J31/15

Abstract: PURPOSE:To provide a field emission cold-cathode array which can be formed by a simple and short throughput and has a uniform dimension and shape over a large area. CONSTITUTION:A substrate gap holding member 5 for holding a gap distance between an anode electrode layer 8 and the tip of an emitter 2 at a space (gap) between adjacent first substrates 11 is accumulatively formed. It can be realized by a simple method that the area of a cold-cathode array (array of emitter 2) is made large by accumulating the substrate gap holding member 5 and at the same time the gap distance between the substrate gap holding member 5 and the anode electrode layer is uniformly held over a large area.

公开(公告)号：JPH0794742A

公开(公告)日：1995-04-07

申请号：JP23295793

申请日：1993-09-20

Applicant: TOSHIBA CORP

Inventor： UCHIKOGA SHIYUUICHI ,  AKIYAMA MASAHIKO

IPC: G02F1/136 ,  G02F1/1368 ,  G09F9/00 ,  H01L29/78 ,  H01L29/786

Abstract: PURPOSE:To present a high-performance thin film semiconductor device realizing even higher resolution and to realize a liquid crystal display which can show high resolution and excellent images by using such thin film semiconductor device. CONSTITUTION:A TFT having excellent operating characteristics such as operating threshold, drain current capacity, and mobility can be realized by forming an overlapping length of a source electrode 11 on a channel protective layer 6, which is 2.5 to 1.5% of a channel region length of a semiconductor layer 4, and forming an overlapping length Ls of the source electrode 11 on the channel protective layer 6 which is less than an overlapping length Ld of a drain electrode 8 on the channel, protective layer 6. Moreover, such overlapping lengths is and Ld on the channel protective layer 6 can be controlled by changing forming patterns of the source electrode 11 and the drain electrode 8, so that the manufacturing process is not cumbersome.

公开(公告)号：JPH06177387A

公开(公告)日：1994-06-24

申请号：JP32349592

申请日：1992-12-03

Applicant: TOSHIBA CORP

Inventor： SHIMANO TAKUYA ,  FUKUDA KAICHI ,  UCHIKOGA SHIYUUICHI ,  IBARAKI NOBUKI ,  SUZUKI KOJI

IPC: G02F1/136 ,  G02F1/1368 ,  H01L29/78 ,  H01L29/786 ,  H01L29/784

Abstract: PURPOSE:To suppress the occurrence of leakage photocurrents by positioning an amorphous silicon thin film having a width in the direction perpendicular to the channel direction smaller than the widths of an inorganic protective film, source electrode, and drain electrode in all directions within the external sizes of the protective film and electrodes in the direction perpendicular to the channel direction. CONSTITUTION:The width alpha1 of an amorphous silicon thin film 14 in the direction perpendicular to the channel direction is smaller than the widths beta1 and theta1 of an inorganic protective film 15 and source and drain electrodes 20 and 21 in the direction perpendicular to the channel direction. In addition, the external size 14a of the film 14 in the direction perpendicular to the channel direction are positioned within the external sizes 15a, 20a, and 21a of the film 15 and electrodes 20 and 21 in the direction perpendicular to the channel direction. Therefore, a high-performance amorphous silicon thin film transistor which is less in the occurrence of leakage photocurrents can be obtained, since the transistor is not irradiated with light from the top side.

公开(公告)号：JPH05134271A

公开(公告)日：1993-05-28

申请号：JP30074291

申请日：1991-11-15

Applicant: TOSHIBA CORP

Inventor： UCHIKOGA SHIYUUICHI ,  AKIYAMA MASAHIKO

IPC: G02F1/133 ,  G02F1/1335 ,  G02F1/136 ,  G02F1/1368 ,  G09F9/30 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786

Abstract: PURPOSE:To provide a liquid crystal display device which can prevent TFT characteristic and display characteristic caused by black matrix from lowering. CONSTITUTION:This device is provided with a light shielding film 2 formed on a light transmissive insulating substrate 1 and having an aperture at an area which is to be a picture element, a picture element electrode 4 formed on the light transmissive insulating substrate 1 so that gap may not be formed between the aperture of the light shielding film 2 and the electrode 4, a TFT 15 provided on the picture element electrode 4, an opposing substrate 12 holding a liquid crystal layer 11 with the light transmissive insulating substrate 1, and a light source irradiating the liquid crystal layer 11 with light through the light transmissive insulating substrate 1.

公开(公告)号：JPH114821A

公开(公告)日：1999-01-12

申请号：JP16174397

申请日：1997-06-19

Applicant: TOSHIBA CORP

Inventor： UCHIKOGA SHIYUUICHI ,  TANAKA MANABU ,  KONNO AKIRA

IPC: G01N23/04 ,  A61B6/00 ,  G01T1/00 ,  G01T1/24 ,  H01L27/14 ,  H01L27/146 ,  H04N5/32

Abstract: PROBLEM TO BE SOLVED: To form a high definition image (an animation) without impairing an advantage of a direct converting method to prevent elemental rupture by a voltage increase in picture element electric potential by providing an active element which is connected to picture element capacity to accumulate detecting electric charge corresponding to a carrier and releases partial electric charge of the detecting electric charge to source electric potential. SOLUTION: An electrode 100 and a picture element electrode 104 are arranged so as to vertically sandwich a photoconductor 101 to generate a carrier by X-ray irradiation, and the following circuit constitution is formed to read signal electric charge on the picture element electrode 104. A high withstand voltage transistor Tr10 to which signal capacity 105 is connected in parallel is connected to this picture element electrode 104, and a second Tr106 is connected. The signal electric charge is distributed to the picture element capacity 104 and the signal capacity 105 of the photoconductor 101 by X-ray irradiation, and when picture element electric potential (at a point A) increases, gate voltage is impressed on a gate line 110 of a Tr10, and is put in an ON condition. Therefore, a part of electric charge is released, and the impression of breakdown voltage on a Tr106 and the signal capacity 105 is prevented.

公开(公告)号：JPH10229196A

公开(公告)日：1998-08-25

申请号：JP2922097

申请日：1997-02-13

Applicant: TOSHIBA CORP

Inventor： KAKIGI MASAMI ,  UCHIKOGA SHIYUUICHI

IPC: H01L29/786

Abstract: PROBLEM TO BE SOLVED: To provide an active matrix type display which prevents impurities, such as moisture from diffusing out of the periphery of an array substrate and has a high-reliability array substrate. SOLUTION: An array substrate has a first silicon oxide-insulating film 7, completely covered with a silicon nitride protective insulation film 15 or conductor film 13b for forming pad electrodes. The film 7 extends to a first region of the substrate to prevent impurities such as moisture from diffusing or penetrating, thereby preventing the characteristics variation or deterioration of a thin-film transistor to hold stable characteristics for a long time, even in a high-temp. and high-humidity severe working environment.

公开(公告)号：JPH1096889A

公开(公告)日：1998-04-14

申请号：JP24779296

申请日：1996-09-19

Applicant: TOSHIBA CORP

Inventor： IKEDA MITSUSHI ,  UCHIKOGA SHIYUUICHI

IPC: G02F1/1335 ,  G02F1/133 ,  G09F9/35 ,  H01L31/04

Abstract: PROBLEM TO BE SOLVED: To make a display usable for a long time using the internal power source by providing a photoelectric converter that converts surrounding light to electric energy. SOLUTION: An oppositely facing substrate 2 is constituted of a glass substrate 14, a solar cell 10 provided on this glass substrate 14, a plastic-made antireflection film 15 installed on this solar cell 10 for the purpose of preventing the reflection of visible radiation, a reflected light absorbing film 16 that is provided on the antireflection film 15 and that is composed of a color filter for absorbing the visible radiation unpreventable by the antireflection film 15 and unabsorbable by the solar cell 10, and a counter electrode 17 consisting of ITO and transparent against the visible light. At the time of a display state with a high light transmittance of a liquid crystal layer 3, the layer 3 transmits light, which impinges on the solar cell 10, generating an electro motive force. Consequently, by utilizing it as a power source, the reduction of electro motive force of the internal cell can be supplemented, enabling the device to be used for a long time.