公开(公告)号：JP2010177405A

公开(公告)日：2010-08-12

申请号：JP2009017687

申请日：2009-01-29

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： KATAGIRI MASAYUKI ,  SAKAI TADASHI ,  SAKUMA HISASHI ,  YAMAZAKI YUICHI ,  SUZUKI MARIKO

IPC: H01L21/768 ,  C01B31/02 ,  H01L21/28 ,  H01L21/285 ,  H01L23/522

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a carbon nanotube on a CoWP.
SOLUTION: The method of manufacturing a carbon nanotube wiring structure includes: a plasma treatment step of plasma-treating a plating layer containing Co on a Cu wiring; an auxiliary catalyst providing step of providing an auxiliary catalyst for growing carbon nanotube to the Co-contained plating layer before or after the plasma treatment step; a heat treatment step of heat-treating the Co-contained plating layer and the auxiliary catalyst provided to the Co-contained plating layer after the plasma treatment step and the auxiliary catalyst providing step; and a carbon nanotube growing step in a plasma CVD method after the heat treatment step.
COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 待解决的问题：提供在CoWP上制造碳纳米管的方法。 解决方案：制造碳纳米管布线结构的方法包括：在Cu布线上等离子体处理含有Co的镀层的等离子体处理步骤; 辅助催化剂提供步骤，其在等离子体处理步骤之前或之后提供用于将碳纳米管生长至辅助镀层的辅助催化剂; 在等离子体处理步骤和辅助催化剂提供步骤之后，对附着的镀层和辅助催化剂进行热处理的热处理步骤; 以及在热处理步骤之后的等离子体CVD法中的碳纳米管生长步骤。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2010163331A

公开(公告)日：2010-07-29

申请号：JP2009008437

申请日：2009-01-19

Applicant: Fujitsu Semiconductor Ltd ,  Toshiba Corp ,  富士通セミコンダクター株式会社 ,  株式会社東芝

Inventor： YAMAZAKI YUICHI ,  SAKAI TADASHI ,  SAKUMA HISASHI ,  KATAGIRI MASAYUKI ,  SUZUKI MARIKO ,  SATO SHINTARO

IPC: C01B31/02

CPC classification number: H01J37/32422 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/16 ,  C23C16/02 ,  C23C16/26 ,  H01J37/32357

Abstract: PROBLEM TO BE SOLVED: To provide a method of growing a high-density carbon nanotube by preventing agglomeration of the catalyst fine particles.
SOLUTION: The method of growing the high-density carbon nanotube comprises: a first plasma treatment process of treating the surface of a substrate provided with the catalyst fine particles by the plasma species generated from a gas containing at least hydrogen or a rare gas excluding carbon; a second plasma treatment process of forming a carbon layer on the surface of the catalyst fine particles by the plasma generated from a gas containing at least hydrocarbons after the first process; and a carbon nanotube growth process of growing the carbon nanotube by the plasma generated from the gas containing at least hydrocarbons after the second process.
COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 解决的问题：提供一种通过防止催化剂细颗粒的聚集来生长高密度碳纳米管的方法。 解决方案：生长高密度碳纳米管的方法包括：第一等离子体处理方法，其通过由至少含有氢气或稀有气体的气体产生的等离子体物质来处理设置有催化剂细颗粒的基板的表面 煤气不含碳; 第二等离子体处理工艺，其通过在第一工艺之后由至少含有烃的气体产生的等离子体在催化剂细颗粒的表面上形成碳层; 以及通过在第二工序后至少含有烃的气体产生的等离子体生长碳纳米管的碳纳米管生长方法。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2008258433A

公开(公告)日：2008-10-23

申请号：JP2007099542

申请日：2007-04-05

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： SAKAI TADASHI ,  SAKUMA HISASHI ,  KATAGIRI MASAYUKI ,  ONO TOMIO ,  SUZUKI MARIKO

IPC: H01L21/768 ,  H01L23/522

CPC classification number: H05K3/4038 ,  B82Y10/00 ,  H01L21/288 ,  H01L21/76879 ,  H01L23/53276 ,  H01L2221/1094 ,  H01L2924/0002 ,  H05K2201/026 ,  H05K2201/0323 ,  Y10S977/742 ,  Y10T29/49155 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide highly reliable wiring capable of suppressing performance degradation. SOLUTION: The wiring is provided with a plurality of conductive members 20 comprising a bundled carbon nanotube whose one end is connected to a first conductive film and other end is connected to a second conductive film separated from the first conductive film, and carbon particles 22 having a diamond crystal structure dispersed between the conductive members 20. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供能够抑制性能劣化的高度可靠的布线。 解决方案：布线设置有多个导电构件20，导电构件20包括一端连接到第一导电膜并且另一端连接到与第一导电膜分离的第二导电膜的带状碳纳米管，以及碳 颗粒22具有分散在导电构件20之间的金刚石晶体结构。版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2008243676A

公开(公告)日：2008-10-09

申请号：JP2007084287

申请日：2007-03-28

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： ONO TOMIO ,  SAKAI TADASHI ,  SAKUMA HISASHI ,  YOSHIDA HIROAKI ,  SUZUKI MARIKO

IPC: H01J1/308

Abstract: PROBLEM TO BE SOLVED: To provide a diamond electron emission element in which electrons can be emitted at high efficiency. SOLUTION: This is equipped with a diamond substrate (1), a high concentration p-type diamond layer (2) which is formed on the diamond substrate and contains p-type impurities at a first concentration, a low concentration p-type diamond layer (3) which is formed on the high concentration p-type diamond layer and contains p-type impurities at a second concentration that is lower than the first concentration, an n-type semiconductor region (5) formed at a part of the low concentration p-type diamond layer, an insulation layer (7) that is formed ranging over the low concentration p-type diamond layer and the n-type semiconductor region and has an aperture in which the low concentration p-type diamond layer and the n-type conductor region are partially exposed, a gate electrode (8) formed on the insulation layer, an electron emission suppressing region (6) that is extended to the aperture and arranged under the insulation membrane, and a hydrogen terminal end face (9) to cover the surface of the aperture. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供能够以高效率发射电子的金刚石电子发射元件。

解决方案：它配备有金刚石基底（1），高浓度p型金刚石层（2），其形成在金刚石基底上并含有第一浓度的p型杂质，低浓度p- 形成在高浓度p型金刚石层上并且含有低于第一浓度的第二浓度的p型杂质的n型金刚石层（3），形成在第一浓度部分的n型半导体区域 低浓度p型金刚石层，形成在低浓度p型金刚石层和n型半导体区域之上的绝缘层（7），并且具有孔，其中低浓度p型金刚石层和 n型导体区域部分地露出，形成在绝缘层上的栅电极（8），延伸到孔口并布置在绝缘膜下方的电子发射抑制区域（6）和氢终端端面 9）覆盖表面 e的孔径。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2008078081A

公开(公告)日：2008-04-03

申请号：JP2006258925

申请日：2006-09-25

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： SAKAI TADASHI ,  ONO TOMIO ,  SAKUMA HISASHI ,  YOSHIDA HIROAKI ,  SUZUKI MARIKO

IPC: H01J1/304 ,  H01J9/02

CPC classification number: H01J1/304 ,  H01J9/025

Abstract: PROBLEM TO BE SOLVED: To provide a field emission electron source and its manufacturing method capable of achieving electron emission of a high output in plane, and achieving electron emission excellent in durability and stable for a long period of time. SOLUTION: The field emission electron source 1 includes a substrate 2. The substrate 2 has a wiring layer 3 formed, on which 3, an insulating layer 4 is formed. The insulating layer 4 has a plurality of through-holes 5 provided, inside each of which 5, a conductive via plug 6 is arranged. A diamond layer 7 is formed so as to cover top parts of the insulating layer 4 and the conductive via plugs 6. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供一种能够实现平面上高输出的电子发射的场发射电子源及其制造方法，并且实现耐久性优异并且长时间稳定的电子发射。 解决方案：场发射电子源1包括衬底2.衬底2具有形成的布线层3，其上形成有绝缘层4。 绝缘层4具有设置有多个通孔5，每个通孔5布置有导电通孔塞6。 金刚石层7形成为覆盖绝缘层4和导电通孔塞6的顶部。（C）2008年，JPO和INPIT

公开(公告)号：JP2007246314A

公开(公告)日：2007-09-27

申请号：JP2006069496

申请日：2006-03-14

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： YOSHIDA HIROAKI ,  YANASE ISAMU ,  ONO TOMIO ,  SAKUMA HISASHI ,  SUZUKI MARIKO ,  SAKAI TADASHI

IPC: C30B29/04 ,  C23C16/02 ,  C23C16/27 ,  H01J61/06 ,  H01J61/067

CPC classification number: C30B29/04 ,  C30B25/105 ,  H01L21/02381 ,  H01L21/02425 ,  H01L21/02444 ,  H01L21/02527 ,  H01L21/0262 ,  H01L21/02645

Abstract: PROBLEM TO BE SOLVED: To uniformly form a diamond film on an inner face of a metal substrate having an opening.
SOLUTION: The method includes: a diamond nuclei forming step of forming diamond nuclei on the surface of a metal substrate 1a of a mixture of the metal substrate 1a and a semiconductor material 12, 13 at a temperature lower than 650°C in a first gaseous mixture containing at least carbon and hydrogen; and a diamond film forming step of growing the diamond nuclei to form a diamond film on the mixture having the diamond nuclei at a temperature lower than 750°C in a second gaseous mixture containing at least carbon and hydrogen.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：在具有开口的金属基板的内表面上均匀地形成金刚石膜。 解决方案：该方法包括：在低于650℃的温度下在金属基板1a和半导体材料12,13的混合物的金属基板1a的表面上形成金刚石核的金刚石核形成步骤， 至少含有碳和氢的第一气体混合物; 以及金刚石膜形成步骤，在含有至少碳和氢的第二气体混合物中，在具有金刚石核的混合物中在低于750℃的温度下生长金刚石核以形成金刚石膜。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2007128783A

公开(公告)日：2007-05-24

申请号：JP2005321388

申请日：2005-11-04

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： ONO TOMIO ,  SAKAI TADASHI ,  SAKUMA HISASHI ,  YOSHIDA HIROAKI ,  SUZUKI MARIKO

IPC: H01J63/08 ,  H01J1/304

CPC classification number: H01J61/0737 ,  H01J61/0675 ,  H01J2201/308

Abstract: PROBLEM TO BE SOLVED: To provide a discharge light emitting device in which an electron is discharged from a p-type semiconductor, and which has a high discharge efficiency of the electron, and a long lifetime. SOLUTION: Provided are: an enclosure 101; gas 107 for discharge sealed in the enclosure 101; an anode 103 and a cathode 102 installed in the enclosure 101; electrode members 114 respectively connected to the anode 103 and the cathode 102; molybdenum foils 104 connected to the electrode members 114; and extraction leads 105 connected to the molybdenum foils 104. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供一种从p型半导体放电并具有高电子放电效率的放电发光器件，并且寿命长。

解决方案：提供：外壳101; 用于排出的气体107密封在外壳101中; 安装在外壳101中的阳极103和阴极102; 分别连接到阳极103和阴极102的电极构件114; 连接到电极构件114的钼箔104; 和连接到钼箔104的提取引线105.版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2007042458A

公开(公告)日：2007-02-15

申请号：JP2005225898

申请日：2005-08-03

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： SAKAI TADASHI ,  ONO TOMIO ,  SAKUMA HISASHI ,  YOSHIDA HIROAKI ,  SUZUKI MARIKO

IPC: H01J1/34 ,  H01J1/30 ,  H01J21/02 ,  H01J35/06

CPC classification number: H01J21/04 ,  H01J3/021

Abstract: PROBLEM TO BE SOLVED: To achieve stable emission of electrons and a high output of electrons even with impression at low voltage. SOLUTION: The electron emitting device is equipped with a cathode in a cell structuring a surface of a discharge cell, a diamond barrier arranged to be faced to the cathode in the cell, an insulation body arranged between the cathode in the cell and a first surface of the diamond barrier and forming a sealed space, inert gas sealed in the sealed space, a discharge anode separating the first surface and a second surface of an opposite surface of the diamond barrier and arranged to be faced to each other with vacuum in between, a first electrode impressing voltage between the cathode in the cell and the diamond barrier using the diamond barrier as an anode side, and a second power supply impressing voltage between the diamond barrier and the discharge anode using the discharge anode as an anode side. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：即使在低电压下的印象，也能实现电子的稳定发射和高电子输出。 解决方案：电子发射器件在构成放电单元的表面的单元中装备有阴极，金刚石阻挡层布置成面对电池中的阴极，布置在电池中的阴极之间的绝缘体和 金刚石阻挡层的第一表面并形成密封空间，密封在密封空间中的惰性气体，将金刚石阻挡层的第一表面和相对表面的第二表面分开的放电阳极，并布置为彼此面对真空 其中，使用金刚石阻挡层作为阳极侧的第一电极施加电池中的阴极和金刚石阻挡层之间的电压，以及使用放电阳极作为阳极侧的金刚石阻挡层和放电阳极之间的第二电源施加电压 。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2006278290A

公开(公告)日：2006-10-12

申请号：JP2005100038

申请日：2005-03-30

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： SAKAI TADASHI ,  ONO TOMIO ,  SAKUMA HISASHI ,  YOSHIDA HIROAKI ,  SUZUKI MARIKO

IPC: H01J61/06 ,  H01J9/24 ,  H01J61/20 ,  H01J61/30 ,  H01J61/92

CPC classification number: H01J61/82 ,  H01J9/247 ,  H01J61/0735 ,  H01J61/302

Abstract: PROBLEM TO BE SOLVED: To provide a discharge light emitting device of high output superior in heat resistance and pressure resistance and capable of production at low cost.
SOLUTION: The discharge light emitting device emits light by discharge and comprises a housing which is made of an insulating diamond and has a discharge chamber 20 formed inside, a discharge material 22 sealed in the discharge chamber 20, and a pair of electrodes 31, 32 made of conductive diamond.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 解决的问题：提供一种具有优异的耐热性和耐压性且能够以低成本生产的高输出的放电发光装置。 解决方案：放电发光器件通过放电发光，并且包括由绝缘金刚石制成并具有形成在其内部的放电室20的外壳，密封在放电室20中的放电材料22和一对电极 31,32由导电金刚石制成。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2006172718A

公开(公告)日：2006-06-29

申请号：JP2004359145

申请日：2004-12-10

Applicant: Harison Toshiba Lighting Corp ,  Toshiba Corp ,  ハリソン東芝ライティング株式会社 ,  株式会社東芝

Inventor： SAKAI TADASHI ,  ONO TOMIO ,  SAKUMA HISASHI ,  TAKAGI MASASANE

IPC: H01J65/00 ,  H01J61/06 ,  H01J61/35

Abstract: PROBLEM TO BE SOLVED: To improve the electron emission efficiency of a discharge device.
SOLUTION: This discharge device 1 is provided with: a hollow body 2 having translucency; phosphor layers 3 formed in the hollow body 2; a discharge gas 4 enclosed in the hollow body 2; at least a pair of electrodes 5 arranged inside or outside the hollow body 2 for applying a voltage to the discharge gas 4; and nano-diamonds 7 arranged in the hollow body 2. The electrodes 5 are arranged outside the hollow body 2, and the nano-diamonds 7 are arranged at positions on inside surfaces of the hollow body 2 facing the electrodes 5 through the hollow body 2.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提高放电装置的电子发射效率。 解决方案：该排出装置1具有：具有半透明性的中空体2; 形成在中空体2中的荧光体层3; 封闭在中空体2中的放电气体4; 至少一对电极5，其布置在中空本体2的内部或外部，用于向放电气体4施加电压; 和布置在中空体2中的纳米金刚石7.电极5布置在中空体2的外侧，并且纳米金刚石7通过中空体2布置在中空体2的面向电极5的内表面上的位置 （C）2006年，JPO＆NCIPI