-
公开(公告)号：JP4830418B2
公开(公告)日：2011-12-07
申请号：JP2005270844
申请日：2005-09-16
Applicant: 株式会社デンソー
IPC: H01L21/316 , H01L21/822 , H01L27/04 , H01L31/04
CPC classification number: H01L31/035281 , B81B2201/058 , B81B2201/06 , B81C1/00071 , B81C2201/0169 , Y02E10/50
-
42.发明专利
公开(公告)号：JP4476549B2
公开(公告)日：2010-06-09
申请号：JP2002586704
申请日：2001-06-13
Applicant: 三菱電機株式会社
IPC: B81C1/00 , B81B3/00 , G01P15/125 , H01L29/84
CPC classification number: B81C1/00666 , B81B2201/0235 , B81C2201/0164 , B81C2201/0169 , G01P15/125 , G01P2015/0814 , H01G4/33 , H01G5/16
-
公开(公告)号：JP2015019310A
公开(公告)日：2015-01-29
申请号：JP2013146346
申请日：2013-07-12
Applicant: 富士フイルム株式会社 , Fujifilm Corp
Inventor： SANO TAKAHIRO , NAONO TAKAYUKI
IPC: H03H9/17 , B81C1/00 , G01C19/56 , G01L9/08 , G01P15/09 , H01L29/84 , H01L41/113 , H01L41/316 , H04R17/00 , H04R17/10
CPC classification number: B81B3/0072 , B81B2203/0127 , B81B2203/0353 , B81B2203/04 , B81C1/00666 , B81C2201/0112 , B81C2201/0169 , B81C2201/017 , B81C2201/0176 , G01C19/56 , G01P15/09 , G01P2015/084 , H01L41/0815 , H01L41/1138 , H01L41/319 , H03H9/17 , H03H2003/027 , H03H2003/0414 , H04R17/10 , H04R31/00 , H04R2201/003
Abstract: 【課題】共振周波数安定性を高めるダイアフラム型共振MEMSデバイス及びその製造方法を提供する。【解決手段】シリコン基板の第1の面に、熱酸化により、又は900℃以上の熱処理を含むプロセスにより形成する第1のシリコン酸化膜、絶対値が100[MPa]以下の応力を有する第2のシリコン酸化膜、下部電極、圧電体膜、上部電極を当該順に積層し、シリコン基板の第1の面の反対側の面を深堀り反応性イオンエッチングにより第1のシリコン酸化膜に到達するまでエッチング加工して凹部を形成する。第1のシリコン酸化膜の膜厚をt1、第2のシリコン酸化膜の膜厚をt2、第1のシリコン酸化膜と第2のシリコン酸化膜における第2のシリコン酸化膜の厚さの割合t2/(t1+t2)をR2とすると、0.10[μm]≦̸t1≦̸2.00[μm]、かつ、R2≧0.70を満たす。【選択図】図1
Abstract translation: 要解决的问题：提供一种提高谐振频率稳定性的膜片式共振MEMS器件，以及制造隔膜式谐振MEMS器件的方法。解决方案：通过热氧化形成的第一氧化硅膜或包括热处理的工艺 900℃以上，绝对值为100 [MPa]以下的应力的第二氧化硅膜，下电极，压电膜和上电极依次层叠在硅基板的第一面上 并且通过深反应离子蚀刻蚀刻在与第一表面相对的一侧上的硅衬底的表面，直到到达第一氧化硅膜，从而形成凹部。 当第一氧化硅膜的厚度定义为t时，第二氧化硅膜的厚度被定义为t，并且第二氧化硅膜的厚度相对于第二氧化硅膜的厚度的比率t /（t + t） 第一氧化硅膜和第二氧化硅膜的厚度定义为R2，0.10 [μm]≤t≤2.00[μm]，R≥0.70。
-
公开(公告)号：JP5026632B2
公开(公告)日：2012-09-12
申请号：JP2000216404
申请日：2000-07-17
Inventor： フュルチュ マッティアス , オッフェンベルク ミヒャエル
CPC classification number: B81C1/00666 , B81B2203/0118 , B81C2201/0109 , B81C2201/0164 , B81C2201/0169
-
公开(公告)号：KR100555616B1
公开(公告)日：2006-03-03
申请号：KR1020037002105
申请日：2001-06-13
Applicant: 미쓰비시덴키 가부시키가이샤
IPC: H01L29/84
CPC classification number: B81C1/00666 , B81B2201/0235 , B81C2201/0164 , B81C2201/0169 , G01P15/125 , G01P2015/0814 , H01G4/33 , H01G5/16
Abstract: A thin-film structural body formed by using a semiconductor processing technique and a manufacturing method thereof, and particularly a thin-film structural body constituting a semiconductor acceleration sensor and a manufacturing method thereof. The thin-film structural body allows the thin-film member to be easily stress-controlled, and easily makes the film-thickness of the thin-film member thicker. The thin-film member forms a mass body and, beams and fixed electrodes of the semiconductor acceleration sensor are constituted by a plurality of doped polysilicon thin-films that are laminated by performing a step of film deposition of polysilicon while, for example, phosphorous is being doped as impurities plural times.
-
Patent Agency Ranking
公开(公告)号：KR1020080097243A
公开(公告)日：2008-11-04
申请号：KR1020087023570
申请日：2007-03-28
Applicant: 가부시키가이샤 고베 세이코쇼
IPC: H01L21/316 , H01L31/101
CPC classification number: G01F1/692 , B81B2201/0278 , B81B2203/0127 , B81C1/00666 , B81C2201/0169 , B81C2201/0178 , C23C16/402 , C23C16/56 , Y10T428/24488 , Y10T428/24612
Abstract: A membrane structure element which can be easily manufactured, has excellent insulating characteristics and a high quality is provided. A method for manufacturing such membrane structure element is also provided. The membrane structure element is provided with a membrane formed of a silicon oxide film, and a substrate for supporting the membrane in a hollow status by supporting a part of the periphery of the membrane. The method for manufacturing such membrane is provided with a film forming step of forming a heat-shrinkable silicon oxide film (13) on the surface side of a silicon substrate (2) by plasma CVD method; a heat treatment step of performing heat treatment for making the silicon oxide film (13) formed on the substrate (1) shrink with heat; and a removing step of removing a part of the substrate (2) so that a corresponding part of the silicon oxide film (13) to the membrane is supported as a membrane to the substrate (2) in the hollow status, and forming a recessed section (4).
Abstract translation: 提供了可以容易地制造的膜结构元件，具有优异的绝缘特性和高质量。 还提供了一种制造这种膜结构元件的方法。 膜结构元件设置有由氧化硅膜形成的膜，以及用于通过支撑膜的周边的一部分来将膜支撑在中空状态的基板。 该膜的制造方法具有通过等离子体CVD法在硅衬底（2）的表面侧形成热收缩性氧化硅膜（13）的成膜工序; 进行热处理的热处理步骤使得形成在基板（1）上的氧化硅膜（13）热收缩; 以及去除所述基板（2）的一部分以使得所述膜的所述氧化硅膜（13）的相应部分以中空状态作为膜被支撑到所述基板（2）的去除步骤，并且形成凹陷 第（4）节。
-
公开(公告)号：KR1020030027951A
公开(公告)日：2003-04-07
申请号：KR1020037002105
申请日：2001-06-13
Applicant: 미쓰비시덴키 가부시키가이샤
IPC: H01L29/84
CPC classification number: B81C1/00666 , B81B2201/0235 , B81C2201/0164 , B81C2201/0169 , G01P15/125 , G01P2015/0814 , H01G4/33 , H01G5/16
Abstract: 본 발명은, 반도체 가공기술을 사용하여 형성되는 박막구조체 및 그 제조방법에 관한 것으로, 특히 반도체 가속도 센서를 구성하는 박막구조체 및 그 제조방법에 있어서, 간편히 박막체의 응력제어가 가능함과 동시에, 박막체의 막두께를 두껍게 하는 것이 용이한 박막구조체 및 그 제조방법을 제공하는 것을 목적으로 한다. 그리고, 상기목적을 달성하기 위해, 반도체 가속도 센서의 질량체(3), 빔(7) 및 고정전극(5)을 구성하는 박막체(8)가, 불순물로서 예를 들면 인을 도프하면서 폴리실리콘을 막형성하는 공정을 복수회 행하여 적층된 복수의 도프된 폴리실리콘 박막(33, 35)에 의해 구성되어 있다.
Abstract translation: 通过使用半导体加工技术及其制造方法形成的薄膜结构体，特别是构成半导体加速度传感器的薄膜结构体及其制造方法。 薄膜结构体容易对薄膜部件进行应力控制，并且容易使薄膜部件的膜厚变厚。 薄膜构件形成质量体，并且半导体加速度传感器的梁和固定电极由多个掺杂多晶硅薄膜构成，所述多个掺杂多晶硅薄膜通过执行多晶硅的膜沉积步骤而层压，而例如磷 作为杂质被多次掺杂。
-
公开(公告)号：KR1020150133145A
公开(公告)日：2015-11-27
申请号：KR1020150068898
申请日：2015-05-18
Applicant: 인벤센스, 인크.
IPC: B81C1/00
CPC classification number: B81C1/00626 , B81C1/00825 , B81C2201/0169
Abstract: 본발명은 MEMS 장치의액추에이터층을형성하는방법에관한것이다. 이방법은액추에이터층을에칭하고 MEMS 장치의표면거칠기를감소시키도록에칭후에액추에이터층을어닐링하는것을포함한다.
Abstract translation: 本发明涉及一种改善表面粗糙度并消除MEMS装置致动器层上的尖角的方法。 该方法包括：蚀刻致动器层并且在蚀刻之后使致动器层退火以降低MEMS器件的表面粗糙度。
-
公开(公告)号：US09604845B2
公开(公告)日：2017-03-28
申请号：US14873091
申请日：2015-10-01
Applicant: STMicroelectronics, Inc.
Inventor： Ming Fang
CPC classification number: B81C1/00666 , B81B7/0029 , B81B2203/0181 , B81C1/0019 , B81C2201/0169 , B81C2201/112
Abstract: A method of manufacturing microstructures, such as MEMS or NEMS devices, including forming a protective layer on a surface of a moveable component of the microstructure. For example, a silicide layer may be formed on a portion of at least four different surfaces of a poly-silicon mass that is moveable with respect to a substrate of the microstructure. The process may be self-aligning.
-
公开(公告)号：US20150008788A1
公开(公告)日：2015-01-08
申请号：US14185160
申请日：2014-02-20
Inventor： Mourad El-Gamal , Frederic Nabki , Paul-Vahe Cicek
CPC classification number: B81C1/00666 , B81B3/0021 , B81B7/008 , B81B2201/01 , B81B2201/0235 , B81B2201/0271 , B81B2201/03 , B81B2207/015 , B81B2207/03 , B81C1/00063 , B81C1/00246 , B81C1/00396 , B81C1/00587 , B81C2201/014 , B81C2201/0169 , B81C2201/0174 , B81C2203/0721 , B81C2203/0735
Abstract: A method of providing microelectromechanical structures (MEMS) that are compatible with silicon CMOS electronics is provided. The method providing for processes and manufacturing sequences limiting the maximum exposure of an integrated circuit upon which the MEMS is manufactured to below 350° C., and potentially to below 250° C., thereby allowing direct manufacturing of the MEMS devices onto electronics, such as Si CMOS circuits. The method further providing for the provisioning of MEMS devices with multiple non-conductive structural layers such as silicon carbide separated with small lateral gaps. Such silicon carbide structures offering enhanced material properties, increased environmental and chemical resilience whilst also allowing novel designs to be implemented taking advantage of the non-conductive material of the structural layer. The use of silicon carbide being beneficial within the formation of MEMS elements such as motors, gears, rotors, translation drives, etc where increased hardness reduces wear of such elements during operation.
Abstract translation: 提供了一种提供与硅CMOS电子器件兼容的微机电结构（MEMS）的方法。 该方法提供了将MEMS制造的集成电路的最大曝光限制在低于350℃并可能低于250℃的工艺和制造顺序，从而允许将MEMS器件直接制造到电子器件上，例如 作为Si CMOS电路。 该方法进一步提供具有多个非导电结构层的MEMS器件，例如用小的侧向间隙分离的碳化硅。 这种碳化硅结构提供增强的材料性能，增加环境和化学弹性，同时还允许利用结构层的非导电材料来实现新颖的设计。 在形成MEMS元件（例如马达，齿轮，转子，平移驱动器等）中使用碳化硅是有益的，其中增加的硬度降低了操作期间这些元件的磨损。
-
-
-
-
-
-
-
-
-
Search Results
101
records
(took 0.018 seconds)
