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    APPARATUS AND METHOD FOR MANUFACTURING GLASS PREFORM
    41.
    发明申请
    APPARATUS AND METHOD FOR MANUFACTURING GLASS PREFORM 审中-公开
    用于制造玻璃预制件的装置和方法

    公开(公告)号：US20150052952A1

    公开(公告)日：2015-02-26

    申请号：US14521617

    申请日：2014-10-23

    Applicant: FUJIKURA LTD.

    Inventor： Takayuki KITAMURA

    IPC: C03B37/014

    CPC classification number: C03B37/01413 ,  C03B37/01807 ,  C03B37/01815 ,  C03B2201/06 ,  C03B2201/50 ,  C03B2201/54 ,  C03B2207/80 ,  C03B2207/90

    Abstract: An apparatus for manufacturing a glass perform, includes: a dummy tube section, a reservoir portion, and a cooling portion; and a glass tube section in which particles of an alkali metal compound or an alkaline earth metal compound which have flowed into the glass tube section from the dummy tube section are heated by a second heat source which performs traverse, and oxides of the particles being deposited on an inner wall and dispersed in the glass tube section. In the cooling portion of the dummy tube section, vapor of the alkali metal compound or the alkaline earth metal compound generated by heating of a first heat source is cooled and condensed by a dry gas flowing into the dummy tube section, and thereby the particles are generated.

    Abstract translation: 一种玻璃制造装置，包括：虚拟管部，储存部和冷却部; 以及玻璃管部分，其中由虚拟管部分流入玻璃管部分的碱金属化合物或碱土金属化合物的颗粒被进行横越的第二热源加热，并且沉积的颗粒的氧化物 在内壁上分散在玻璃管部分。 在虚拟管部的冷却部中，通过第一热源的加热而产生的碱金属化合物或碱土金属化合物的蒸气被流入虚拟管部的干燥气体冷却并冷凝， 生成。

    SINGLE-CRYSTAL SILICON PULLING SILICA CONTAINER AND PRODUCING METHOD THEREOF
    42.
    发明申请
    SINGLE-CRYSTAL SILICON PULLING SILICA CONTAINER AND PRODUCING METHOD THEREOF 审中-公开
    单晶硅拉丝二氧化硅容器及其制造方法

    公开(公告)号：US20140182510A1

    公开(公告)日：2014-07-03

    申请号：US14122509

    申请日：2013-02-19

    Applicant: SHIN-ETSU QUARTZ PRODUCTS CO., LTD.

    Inventor： Shigeru Yamagata

    IPC: C30B15/10 ,  C03B19/02

    CPC classification number: C03B19/02 ,  C03B19/095 ,  C03B2201/04 ,  C03B2201/07 ,  C03B2201/23 ,  C03B2201/54 ,  C03C3/06 ,  C03C8/02 ,  C03C10/0009 ,  C03C21/008 ,  C03C23/007 ,  C03C2201/02 ,  C03C2201/54 ,  C03C2201/80 ,  C03C2203/10 ,  C30B15/10 ,  C30B29/06 ,  Y02P40/57 ,  Y10T117/1032

    Abstract: A single-crystal silicon pulling silica container including: a transparent silica glass layer in the inner side of the silica container; and an opaque silica glass layer containing gaseous bubbles in the outer side of the silica container, wherein the transparent layer constitutes of a high-OH group layer placed on an inner surface side of the silica container containing the OH group at a concentration of 200 to 2000 ppm by mass and a low-OH group layer having the OH group concentration lower than the high-OH group layer containing Ba at a concentration of 50 to 2000 ppm by mass. Resulting in the silica container used for pulling single-crystal silicon, providing the silica container improves etching corrosion resistance of the container inner surface to silicon melt when the entire inner surface of transparent silica glass of the container is crystallized short after using the container and method for such silica container.

    Abstract translation: 一种单晶硅拉硅石容器，其包括：二氧化硅容器的内侧的透明石英玻璃层; 以及在二氧化硅容器的外侧含有气泡的不透明二氧化硅玻璃层，其中，所述透明层构成高OH基层，所述高OH基层位于含有浓度为200〜200的OH基团的二氧化硅容器的内表面侧 2000质量ppm，OH基浓度低于含有浓度为50〜2000质量ppm的Ba的高OH基层的低-OH基层。 导致用于拉拔单晶硅的二氧化硅容器，当容器内透明石英玻璃的整个内表面在使用容器之后结晶短时，提供二氧化硅容器提高容器内表面对硅熔体的耐蚀刻腐蚀性和方法 用于这种二氧化硅容器。

    QUARTZ GLASS MEMBER FOR PLASMA ETCHING
    44.
    发明申请
    QUARTZ GLASS MEMBER FOR PLASMA ETCHING 审中-公开
    用于等离子体蚀刻的QUARTZ玻璃成员

    公开(公告)号：US20110232847A1

    公开(公告)日：2011-09-29

    申请号：US12671903

    申请日：2008-07-24

    Applicant: Tatsuhiro Sato ,  Kyoichi Inaki

    Inventor： Tatsuhiro Sato ,  Kyoichi Inaki

    IPC: H01L21/683 ,  C23F1/08

    CPC classification number: C03B19/01 ,  C03B2201/30 ,  C03B2201/34 ,  C03B2201/36 ,  C03B2201/40 ,  C03B2201/54 ,  C03C3/06 ,  C03C2201/36 ,  H01L21/67069 ,  H01L21/68757 ,  Y02P40/57

    Abstract: Provided is a doped quartz glass member for plasma etching, which is used in a plasma etching process and is free from any problematic fluoride accumulation during use. The quartz glass member for plasma etching is used as a jig for semiconductor production in a plasma etching process, and includes at least two or more kinds of metal elements in a total amount of 0.01 wt % or more to less than 0.1 wt %, in which the metal elements are formed of at least one kind of a first metal element selected from metal elements belonging to Group 3B of the periodic table and at least one kind of a second metal element selected from the group consisting of Mg, Ca, Sr, Ba, Sc, Y, Ti, Zr, Hf, lanthanoids, and actinoids.

    Abstract translation: 提供了用于等离子体蚀刻的掺杂石英玻璃构件，其用于等离子体蚀刻工艺中，并且在使用期间没有任何有问题的氟化物积聚。 用于等离子体蚀刻的石英玻璃构件用作等离子体蚀刻工艺中的半导体制造的夹具，并且包括总量为0.01重量％以上至小于0.1重量％的至少两种以上的金属元素， 金属元素由选自属于周期表第3B族的金属元素中的至少一种第一金属元素和选自Mg，Ca，Sr等的至少一种第二金属元素形成， Ba，Sc，Y，Ti，Zr，Hf，镧系元素和锕系元素。

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