-
41.发明申请
公开(公告)号：WO2015022621A1
公开(公告)日：2015-02-19
申请号：PCT/IB2014/063847
申请日：2014-08-11
Inventor： EINAT, Moshe
IPC: H01J1/62
CPC classification number: H01J1/30 , H01J23/06 , H01J25/025 , H01J29/04 , H01J2201/306
Abstract: Disclosed are methods and devices suitable for generating electron beams and pulses of radiation. Specifically, in some disclosed embodiments, multiple emitting electrodes of a ferroelectric emitter are sequentially activated, generating a relatively long electron beam pulse that is substantially a series of substantially consecutive short electron beam pulses generated by the sequentially-activated individual emitting electrodes.
Abstract translation: 公开了适于产生电子束和辐射脉冲的方法和装置。 具体来说，在一些公开的实施例中，铁电发射器的多个发射电极被顺序地激活，产生相对较长的电子束脉冲，其基本上是由顺序激活的单个发射电极产生的基本上连续的短电子束脉冲串。
-
公开(公告)号：WO2006025175A1
公开(公告)日：2006-03-09
申请号：PCT/JP2005/014105
申请日：2005-08-02
CPC classification number: H01J31/127 , H01J1/316 , H01J2201/306
Abstract: ＰＥＤは、背面基板の内面（４ａ）に信号配線（１８ａ、１８ｂ）、および走査配線（１８ｃ、１８ｄ）をマトリックス状に形成して、各交点に対応して電子放出部材としてのＰＺＴフィルム（２４）を形成して構成されている。ＰＺＴフィルム（２４）は、配線に接続した素子電極（２１、２２）間に電圧を印加することにより、その形状に依存した断面形状の電子ビームを放出する。
Abstract translation: 包括在后表面基板的内表面（4a）上以矩阵形式形成的信号布线（18a，18b）和扫描布线（18c，18d）的PED和形成为电子发射部件的PZT膜（24） 对应于各个交叉点。 PZT膜（24）发射具有取决于与布线连接的元件电极（21,22）之间施加的电压的形状的截面形状的电子束。
-
公开(公告)号：KR100383192B1
公开(公告)日：2003-05-09
申请号：KR1020000074313
申请日：2000-12-07
Applicant: 삼성전자주식회사 , 버지니아 테크 인터렉추얼 프라퍼티스, 인크.
Inventor： 유인경
CPC classification number: H01J1/30 , H01J2201/306
Abstract: A ferroelectric emitter is described. The ferroelectric emitter of the present invention includes a ferroelectric layer having a first side, an opposing second side, and a top surface, a first and a second electrode formed along the top surface of the ferroelectric layer, and a mask layer which has a predetermined pattern and is formed along the top surface of the ferroelectric layer between the first and second electrodes. When used in ferroelectric switching emission lithography, the ferroelectric emitter of the present invention allows electron emission from a wide or narrow gap of a mask layer and from an isolated pattern such as a doughnut shape while facilitating re-poling in pyroelectric electron emission.
Abstract translation: 描述了铁电发射器。 本发明的铁电体发射体包括具有第一面，相对的第二面和顶面的铁电体层，沿铁电体层的顶面形成的第一和第二电极以及具有预定的 图案并且沿着第一和第二电极之间的铁电层的顶表面形成。 当用于铁电开关发射光刻时，本发明的铁电发射体允许电子从掩模层的宽或窄间隙和诸如圆环形状的隔离图案发射，同时促进热电电子发射中的重新极化。
-
公开(公告)号：KR1020020022524A
公开(公告)日：2002-03-27
申请号：KR1020000084215
申请日：2000-12-28
Applicant: 버지니아 테크 인터렉추얼 프라퍼티스, 인크. , 삼성전자주식회사
Inventor： 유인경
IPC: H01J1/30 , H01L21/027
CPC classification number: B82Y10/00 , B82Y40/00 , H01J1/312 , H01J37/073 , H01J37/3174 , H01J2201/306
Abstract: PURPOSE: A ferroelectric emitter is provided to allow electrons to be emitted from narrow or wide portion of a mask pattern, pattern a closed doughnut pattern, and eliminate heating to Curie temperature in electron emission of a pyroelectric. CONSTITUTION: A ferroelectric emitter comprises a ferroelectric layer(11) and an insert electrode(12) at the top center of the ferroelectric layer(11). A dielectric layer(13) is formed on both sides of the top of the ferroelectric layer(11) and the top of the insert electrode(12) to cover the insert electrode(12). A pattern is formed into the top of the dielectric layer(13). The insert electrode(12) is located under the patterned portion of the dielectric layer(13). A dummy electrode(14) is formed on a remaining portion, that is not patterned, of the top of the dielectric layer(13). A bottom electrode(15) is formed under the ferroelectric(11) to apply external charges during operation of the ferroelectric emitter.
Abstract translation: 目的：提供铁电发射体以允许从掩模图案的窄或宽部分发射电子，图案化封闭圆环形图案，并且消除热电电子发射中的居里温度。 构成：铁电体发射体在铁电层（11）的顶部中心包括铁电层（11）和插入电极（12）。 电介质层（13）形成在铁电层（11）的顶部两侧和插入电极（12）的顶部以覆盖插入电极（12）。 图案形成在电介质层（13）的顶部。 插入电极（12）位于电介质层（13）的图案化部分的下方。 在电介质层（13）的顶部的剩余部分（未图案化）上形成虚拟电极（14）。 在铁电体（11）的下面形成有底部电极（15），以在铁电体发射体的运转过程中施加外部电荷。
-
公开(公告)号：EP1630842A3
公开(公告)日：2008-05-28
申请号：EP05255199.1
申请日：2005-08-24
Applicant: NGK INSULATORS, LTD.
Inventor： Yamaguchi, Hirofumi, NGK Insulators, Ltd. , Sato, Kei, NGK Insulators, Ltd. , Kashiwaya, Toshikatsu, NGK Insulators, Ltd.
CPC classification number: H01J1/312 , B82Y10/00 , C04B35/493 , C04B2235/3206 , C04B2235/3213 , C04B2235/3227 , C04B2235/3251 , C04B2235/3256 , C04B2235/3258 , C04B2235/3262 , C04B2235/3272 , C04B2235/3298 , C04B2235/76 , C04B2235/762 , C04B2235/764 , C04B2235/765 , H01J1/32 , H01J2201/306 , H01J2201/3125 , H01J2329/00
Abstract: Provided is a piezoelectric-film-type electron emitter which enables suppression of reduction of electron emission quantity due to repeated use thereof, and which exhibits high durability. The electron emitter includes a substrate (11); an emitter section (12) formed of a dielectric material; a first electrode (14) formed on the top surface of the emitter section; and a second electrode (16) formed on the bottom surface of the emitter section. The dielectric material forming the emitter section contains a dielectric composition having an electric-field-induced strain (i.e., percent deformation under application of an electric field of 4 kV/mm, as measured in a direction perpendicular to the electric field) of 0.07% or less.
-
Patent Agency Ranking
公开(公告)号：EP1617450A3
公开(公告)日：2008-02-13
申请号：EP05254405.3
申请日：2005-07-14
Applicant: NGK INSULATORS, LTD.
Inventor： Nanataki, Tsutomu , Yamaguchi, Hirofumi , Tanaka, Ritsu
CPC classification number: H01J1/312 , B82Y10/00 , H01J1/32 , H01J2201/306 , H01J2201/3125 , H01J2329/00
Abstract: A dielectric device of higher performance is provided. An electron emitter (12), to which the dielectric device is applied is provided with: an emitter including a dielectric; and an upper electrode (14) and a lower electrode (16) to which drive voltage is applied in order to emit electrons. The emitter is formed by the aerosol deposition method or the sol impregnation method, and the surface roughness of the upper surface thereof is controlled in the range from 0.1 to 3 in Ra.
-
47.发明公开ELECTRON EMISSION ELEMENT AND FIELD EMISSION DISPLAY USING IT 审中-公开VERWEN-DENDE FELDEMISSIONSANZEIGE的ELEKTRONENEMISSIONSELEMENT
公开(公告)号：EP1265263A4
公开(公告)日：2006-11-08
申请号：EP01272270
申请日：2001-12-20
Applicant: NGK INSULATORS LTD
Inventor： TAKEUCHI YUKIHISA , NANATAKI TSUTOMU , OHWADA IWAO , HORIUCHI TOMOYA
CPC classification number: H01J1/316 , H01J1/304 , H01J31/127 , H01J2201/306 , H01J2201/3165
Abstract: An electron emission element, which comprises an electric field application unit composed of a dielectric, a first electrode formed on one surface thereof, and a second electrode formed on the same surface, for forming a slit along with a drive electrode, and which is formed on a substrate.
Abstract translation: 电子发射元件包括电场施加部分，其包括形成在基板上的电介质，形成在电场施加部分的一个表面上的第一电极，形成在电场施加部分的表面上的第二电极，以及 与第一电极配合形成的狭缝。
-
公开(公告)号：EP1630842A2
公开(公告)日：2006-03-01
申请号：EP05255199.1
申请日：2005-08-24
Applicant: NGK INSULATORS, LTD.
Inventor： Yamaguchi, Hirofumi, NGK Insulators, Ltd. , Sato, Kei, NGK Insulators, Ltd. , Kashiwaya, Toshikatsu, NGK Insulators, Ltd.
CPC classification number: H01J1/312 , B82Y10/00 , C04B35/493 , C04B2235/3206 , C04B2235/3213 , C04B2235/3227 , C04B2235/3251 , C04B2235/3256 , C04B2235/3258 , C04B2235/3262 , C04B2235/3272 , C04B2235/3298 , C04B2235/76 , C04B2235/762 , C04B2235/764 , C04B2235/765 , H01J1/32 , H01J2201/306 , H01J2201/3125 , H01J2329/00
Abstract: Provided is a piezoelectric-film-type electron emitter which enables suppression of reduction of electron emission quantity due to repeated use thereof, and which exhibits high durability. The electron emitter includes a substrate (11); an emitter section (12) formed of a dielectric material; a first electrode (14) formed on the top surface of the emitter section; and a second electrode (16) formed on the bottom surface of the emitter section. The dielectric material forming the emitter section contains a dielectric composition having an electric-field-induced strain (i.e., percent deformation under application of an electric field of 4 kV/mm, as measured in a direction perpendicular to the electric field) of 0.07% or less.
Abstract translation: 本发明提供一种压电薄膜型电子发射器，其能够抑制由于重复使用而引起的电子发射量的降低，并且具有高耐久性。 该电子发射器包括衬底（11）; 由电介质材料形成的发射极部分（12） 形成在发射极部分的顶表面上的第一电极（14） 和形成在发射极部分的底表面上的第二电极（16）。 形成发射极部分的电介质材料包含具有电场感应应变（即，在施加4kV / mm的电场下的变形的百分比，在与电场垂直的方向上测量）为0.07％ 或更少。
-
公开(公告)号：EP1329928A3
公开(公告)日：2006-02-08
申请号：EP02258747.1
申请日：2002-12-18
Applicant: NGK INSULATORS, LTD.
Inventor： Takeuchi, Yukihisa , Nanataki, Tsutomu , Ohwada, Iwao , Horiuchi, Tomoya
CPC classification number: H01J1/316 , G09G3/22 , H01J1/304 , H01J2201/306 , H01J2201/3165
Abstract: An electron-emitting element includes an electric field applying portion (1) composed of a dielectric, a first electrode (2) formed on one surface of the electric field applying portion, and a second electrode (3) being formed on the surface and forming a slit in cooperation with the first electrode, and is formed on a substrate (4).
-
公开(公告)号：EP1637508A3
公开(公告)日：2009-08-26
申请号：EP05255211.4
申请日：2005-08-24
Applicant: NGK INSULATORS, LTD.
Inventor： Yamaguchi, Hirofumi, NGK Insulators, Ltd. , Sato, Kei, NGK Insulators, Ltd. , Kashiwaya, Toshikatsu, NGK Insulators, Ltd.
IPC: C04B35/491 , H01J1/30 , H01J1/304 , H01J1/312
CPC classification number: H01J1/312 , B82Y10/00 , C04B35/493 , C04B2235/3206 , C04B2235/3213 , C04B2235/3251 , C04B2235/3256 , C04B2235/3258 , C04B2235/3267 , C04B2235/3279 , C04B2235/3298 , H01J2201/306 , H01J2201/3125 , H01J2329/00
Abstract: Provided is a dielectric composition which, when applied to an electron emitter, enables suppression of reduction of electron emission quantity with passage of time. The dielectric composition contains, as a primary component, a PMN-PZ-PT ternary solid solution composition represented by the following formula Pb x Bi p (Mg y/3 Nb 2/3 ) a Ti b-z M z Zr c O 3 [wherein x, p, and y satisfy the following relations: 0.85 ≤ x ≤ 1.05, 0.02 ≤ p ≤ 0.1, and 0.8 ≤ y ≤ 1.0; a, b, and c are decimal numbers falling within a region formed by connecting the following five points (0.550, 0.425, 0.025), (0.550, 0.150, 0.300), (0.100, 0.150, 0.750), (0.100, 0.525, 0.375), and (0.375, 0.425, 0.200); z satisfies the following relation: 0.02 ≤ z ≤ 0.10; and M is at least one element selected from among Nb, Ta, Mo, and W], and contains Ni in an amount of 0.05 to 2.0 wt.% as reduced to NiO.
-
-
-
-
-
-
-
-
-
Search Results
122
records
(took 0.029 seconds)
