Abstract:
A data storage device including a substrate, a data storage layer on the substrate, and a spin-polarized electron source. The data storage layer comprises a fixed number of atomic layers of a magnetic material which provide the data storage layer with a magnetic anisotropy perpendicular to a surface of the data storage layer. A data magnetic field is created in the data storage layer. The data magnetic field is polarized either in a first direction corresponding to a first data value or in a second direction corresponding to a second data value. Data is stored in the data storage layer by providing a spin-polarized electron having an electron magnetic field with a direction of polarization corresponding to one of the first and the second data values, the electron having a wavelength 'characteristic' of unpaired electrons in the data storage layer which cause the magnetic moment of the material, and directing the spin-polarized electron at the data magnetic field to impart the direction of polarization of the electron magnetic field to the data magnetic field. Data is read from the data storage layer by directing the spin-polarized electron at a second wavelength at the data magnetic field and detecting a deflection or attraction of the spin-polarized electron by the data magnetic field. Alternatively, data is read from the data storage layer by directing the spin-polarized electron at the data magnetic field so that the magnetic medium produces a secondary electron and then detecting certain characteristics of the secondary electron.
Abstract:
An electron emitting element (10) including a semiconductor opto-electronic layer (18) having a split valence band and capable of emitting a beam of spin-polarized electrons from an emitting surface (19) thereof upon incidence of an excitation laser radiation upon the emitting surface, and a reflecting mirror (14) formed on one of opposite sides of the opto-electronic layer remote from the emitting surface and cooperating with the emitting surface to effect multiple reflection therebetween of the incident laser radiation. The emitting element may be provided with a semiconductor light modulator element (114, 150, 170, 216, 280, 298) for modulating the intensity of the laser radiation incident upon the opto-electronic layer. A laser source (212, 304) may be formed integrally with the emitting element and disposed on the side of the opto-electronic layer remote from the emitting surface.
Abstract:
Apparatus for spin polarizing a particle beam, which is adapted to process an input particle beam (Bi) in such a way as to generate an at least partially spin polarized output particle beam (Bo), and comprises: - a vortex beam generator (1) for imparting orbital angular momentum to the input particle beam; - an electromagnetic field generator (5) for generating a transverse magnetic field, space-variant and symmetric with respect to the (z) axis of the input particle beam, in such a way as to change the spin of the particles and attach thereto a plurality of different values of orbital angular momentum in dependence on their input spin values; and - a beam component separating group (7, 9) for spatially separating the particles in dependence on their orbital angular momentum values, in such a way as to obtain the at least partially spin polarized output particle beam.
Abstract:
A data storage device including a substrate, a data storage layer on the substrate, and a spin-polarized electron source. The data storage layer comprises a fixed number of atomic layers of a magnetic material which provide the data storage layer with a magnetic anisotropy perpendicular to a surface of the data storage layer. A data magnetic field is created in the data storage layer. The data magnetic field is polarized either in a first direction corresponding to a first data value or in a second direction corresponding to a second data value. Data is stored in the data storage layer by providing a spin-polarized electron having an electron magnetic field with a direction of polarization corresponding to one of the first and the second data values, the electron having a wavelength 'characteristic' of unpaired electrons in the data storage layer which cause the magnetic moment of the material, and directing the spin-polarized electron at the data magnetic field to impart the direction of polarization of the electron magnetic field to the data magnetic field. Data is read from the data storage layer by directing the spin-polarized electron at a second wavelength at the data magnetic field and detecting a deflection or attraction of the spin-polarized electron by the data magnetic field. Alternatively, data is read from the data storage layer by directing the spin-polarized electron at the data magnetic field so that the magnetic medium produces a secondary electron and then detecting certain characteristics of the secondary electron.
Abstract in simplified Chinese:一数据存储介质包含一基底及在一基底上形成之数据存储层。该数据存储层包含一固定数目之一磁性物质原子层,提供该数据存储层一与数据存储层表面垂直之磁各向异性。在数据存储层上产生一数据磁场。该数据磁场以一对应于一第一数据值之第一方向或以一对应于一第二数据值之第二方向极化。借由提供一具有一电子磁场之自旋极化电子以一对应于第一或第二数据值之极化方向在数据存储层上存储数据,以及导引自旋极化电子至数据磁场使电子磁场之极化方向与数据磁场之极化方向一致。从数据存储层读取数据是借由导引自旋极化电子至数据磁场以及侦测自旋极化电子被数据磁场所偏向或吸引来达成。或者,自数据存储层读取数据可借由导引自旋极化电子至数据磁场使磁性介质产生一次级电子,然后侦侧次级电子之某些特性来达成。