公开(公告)号：US20040214472A1

公开(公告)日：2004-10-28

申请号：US10424861

申请日：2003-04-28

Inventor： Kenneth G. Irish ,  James A. Turek

IPC: H01K001/00 ,  H01J001/00

CPC classification number: H01R33/765 ,  H01R4/18 ,  H01R13/113 ,  H01R13/4226 ,  Y10S439/954

Abstract: A connector for connecting a plurality of wires to a sub-miniature switch and lamp socket assembly having tabs and a ground pin includes a molded, one-piece housing and a plurality of terminals for joining the plurality of wires to the tabs and ground pin. A plurality of openings are formed within the housing, accepting both the plurality of terminals and the tabs and ground pin of the assembly, and allowing the terminals to connect with the tabs and ground pin. The plurality of openings are formed within the bottom, front, and back faces of the housing. A method of connecting a sub-miniature switch and lamp socket assembly having tabs and a ground pin to a plurality of wires is also disclosed.

Abstract translation: 用于将多条电线连接到具有突片和接地引脚的小型开关和灯插座组件的连接器包括模制的一体式外壳和用于将多根电线连接到突片和接地引脚的多个端子。 多个开口形成在壳体内，同时接受组件的多个端子和突片和接地销，并允许端子与接头和接地销连接。 多个开口形成在壳体的底部，前部和背面内。 还公开了一种将具有突片和接地引脚的小型开关和灯座组件连接到多根电线的方法。

公开(公告)号：US20040183422A1

公开(公告)日：2004-09-23

申请号：US10740415

申请日：2003-12-22

Applicant: CANON KABUSHIKI KAISHA

Inventor： Kazuo Kuroda ,  Noriaki Ohguri ,  Toshifumi Yoshioka ,  Takeo Tsukamoto ,  Yoshio Suzuki

IPC: H01J001/00 ,  H01J001/14 ,  H01J009/04

CPC classification number: H01J1/316 ,  H01J9/027 ,  H01J2201/3165

Abstract: To provide an antistatic film that requires low power consumption and provides satisfactory electric contact, as a measure for preventing an insulating substrate surface having an electronic device formed thereon from being charged. The electronic device includes: an insulating substrate; a conductor; and a resistance film connected with the conductor, the conductor and the resistance film being formed on the insulating substrate, characterized in that the resistance film has a larger thickness in a connection region with the conductor than a thickness in portions other than the connection region.

Abstract translation: 为了提供需要低功耗并提供令人满意的电接触的抗静电膜，作为防止其上形成有电子器件的绝缘衬底表面带电的措施。 电子装置包括：绝缘基板; 指挥 以及与所述导体连接的电阻膜，所述导体和所述电阻膜形成在所述绝缘基板上，其特征在于，所述电阻膜在与所述导体的连接区域中的厚度大于所述连接区域以外的部分的厚度。

公开(公告)号：US20040174110A1

公开(公告)日：2004-09-09

申请号：US10481130

申请日：2003-12-18

Inventor： Fuminori Ito

IPC: H01J001/00

CPC classification number: H01J9/025 ,  H01J1/304 ,  H01J3/022 ,  Y10S977/742 ,  Y10S977/939

Abstract: A field emission type cold cathode, comprising a substrate having a conductivity at least on the surface thereof, an insulation layer formed on the substate and having a first opening part, a gate electrode layer formed on the insulation layer, having a center generally aligned with the center of the first opening part, and having, therein, a second opening part having an opening diameter larger than the opening diameter of the first opening part, and an emitter layer formed in the first opening part, the emitter layer characterized by further comprising the bottom surface and the side surfaces of the first opening part.

Abstract translation: 一种场发射型冷阴极，包括至少在其表面上具有导电性的衬底，形成在所述基底上的绝缘层，并且具有第一开口部分，形成在所述绝缘层上的栅电极层， 第一开口部分的中心，并且其中具有开口直径大于第一开口部分的开口直径的第二开口部分和形成在第一开口部分中的发射极层，其特征在于，还包括 第一开口部的底面和侧面。

公开(公告)号：US20030178928A1

公开(公告)日：2003-09-25

申请号：US09876238

申请日：2001-06-07

Inventor： Kurt F. Becker ,  Peter F. Kurunczi ,  Karl H. Schoenbach

IPC: H01J001/00

CPC classification number: H01J61/09 ,  H01J61/16

Abstract: A light source with a sealed, light-transmissive tube filled with high pressure gases or high pressure gas mixtures and a microhollow cathode (MHC) discharge capable of excimer production are provided.

Abstract translation: 提供了具有填充有高压气体或高压气体混合物的密封的透光管的光源和能够产生准分子的微气体阴极（MHC）放电。

公开(公告)号：US20030168956A1

公开(公告)日：2003-09-11

申请号：US10389556

申请日：2003-03-13

Inventor： Sriram Ramamoorthi ,  Zhizhang Chen

IPC: H01J001/00

CPC classification number: B82Y10/00 ,  G11C11/23 ,  H01J1/312 ,  H01J9/025

Abstract: An emitter has an electron supply layer and a tunneling layer formed on the electron supply layer. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within in which the tunneling layer is formed. A cathode layer is formed on the tunneling layer. A conductive layer is partially disposed on the cathode layer and partially on the insulator layer if present. The conductive layer defines an opening to provide a surface for energy emissions of electrons and/or photons. Preferably but optionally, the emitter is subjected to an annealing process thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.

Abstract translation: 发射体具有形成在电子供给层上的电子供给层和隧道层。 可选地，在电子供给层上形成绝缘体层，并且在其内形成有形成有隧道层的开口。 在隧道层上形成阴极层。 导电层部分地设置在阴极层上，部分地设置在绝缘体层上，如果存在的话。 导电层限定一个开口以提供用于电子和/或光子的能量发射的表面。 优选但是可选地，对发射极进行退火处理，从而增加从电子供给层向阴极层隧穿的电子的供应。

公开(公告)号：US20030160556A1

公开(公告)日：2003-08-28

申请号：US10223625

申请日：2002-08-20

Inventor： Young-Chul Choi ,  Ji-Hoon Ahn ,  Hyek-Bok Rhee ,  Dong-Hee Han

IPC: H01J001/30 ,  H01J001/00

CPC classification number: B82Y10/00 ,  H01J1/3042 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30469

Abstract: The present invention provides a cold cathode electron source and a method for manufacturing the cold cathode electron source. The cold cathode electron source includes a substrate on which are deposited a catalyst metal layer, an insulation layer, and a gate metal layer; a cavity section formed through the catalyst metal layer, the insulation layer, and the gate metal layer; and an emitter realized through a plurality of carbon nanotubes, which are grown from walls of the catalyst metal layer exposed in the cavity section and which have long axes parallel to the substrate. The method includes depositing a catalyst metal layer, an insulation layer, and a gate metal layer on a substrate; forming a cavity section by removing a portion of the gate metal layer, the insulation layer, and the catalyst metal layer using a photolithography process; and forming an emitter by mounting the substrate on a chemical vapor deposition reactor and growing carbon nanotubes in a low temperature atmosphere of 500null800 degrees Celsius (null C.).

Abstract translation: 本发明提供一种冷阴极电子源及其制造方法。 冷阴极电子源包括沉积有催化剂金属层，绝缘层和栅极金属层的基板; 通过催化剂金属层，绝缘层和栅极金属层形成的空腔部分; 以及通过多个碳纳米管实现的发射体，其从暴露在空腔部分中的具有平行于衬底的长轴的催化剂金属层的壁生长。 该方法包括在衬底上沉积催化剂金属层，绝缘层和栅极金属层; 通过使用光刻工艺去除栅极金属层，绝缘层和催化剂金属层的一部分来形成空腔部分; 并通过将基板安装在化学气相沉积反应器上并在500〜800摄氏度（℃）的低温气氛中生长碳纳米管来形成发射体。

公开(公告)号：US20030141798A1

公开(公告)日：2003-07-31

申请号：US10302899

申请日：2002-11-25

Applicant: Samsung SDI Co., Ltd

Inventor： Yong-wan Jin ,  Jae-eun Jung

IPC: H01J001/02 ,  H01J001/00 ,  H01J009/00

CPC classification number: B82Y10/00 ,  H01J1/3044 ,  H01J9/025 ,  H01J2201/30469 ,  Y10S977/753 ,  Y10S977/939

Abstract: Provided are a composite for paste including carbon nanotubes (CNTs), an electron emitting device using the same, and a manufacturing method thereof. The provided composite for paste includes 5 to 40 parts by weight of CNTs, 5 to 50 parts by weight of alkali metal silicate, and 1 to 20 parts by weight of a binder. The provided electron emitting device includes electron emitting tips, which are located on cathode electrodes in wells and formed of the composite for paste including 5 to 40 parts by weight of CNTs, 5 to 50 parts by weight of alkali metal silicate, and 1 to 20 parts by weight of a binder. The electron emitting device has excellent stability and durability and uniformly emits electrons from a large area, thereby improving the overall performance of an apparatus using the electron emitting device.

Abstract translation: 提供了包括碳纳米管（CNT）的糊状物的复合材料，使用该复合材料的电子发射器件及其制造方法。 所提供的糊状复合物包括5至40重量份的CNT，5至50重量份的碱金属硅酸盐和1至20重量份的粘合剂。 所提供的电子发射装置包括电子发射尖端，它们位于阱中的阴极上，由包含5至40重量份的CNT，5至50重量份的碱金属硅酸盐和1至20个 重量份的粘合剂。 电子发射器件具有优异的稳定性和耐久性，并且从大面积均匀地发射电子，从而提高使用电子发射器件的装置的整体性能。

公开(公告)号：US20030071555A1

公开(公告)日：2003-04-17

申请号：US09975296

申请日：2001-10-12

Inventor： Xia Sheng ,  Henryk Birecki ,  Si-Ty Lam ,  Huei-Pei Kuo ,  Steven Louis Naberhuis

IPC: H01J001/00

CPC classification number: B82Y10/00 ,  H01J1/312

Abstract: In an electron emitter based on Metal-Insulator-Semiconductor or Metal-Insulator-Metal emitters, field emission structures are enclosed within the emitter structure. The electron emitter may include a conductive substrate and an electron supply layer formed on the conductive substrate. The electron supply layer, for example undoped polysilicon, has protrusions formed on its surface. The sharpness and density of protrusions may be controlled. Above the electron supply layer and the protrusions, an insulator may be formed thereby enclosing the protrusions. A top conductive layer may be formed above the insulator. The enclosed protrusions are relatively insensitive to vacuum contamination. The thinness of the insulator allows high intensity electric fields at the protrusions to be generated with low applied voltage. Field-enhanced injection of electrons into the insulator and thence through the top conductive layer results. Furthermore, electron beam dispersion and divergence are minimized.

Abstract translation: 在基于金属绝缘体半导体或金属 - 绝缘体 - 金属发射体的电子发射器中，场致发射结构被封装在发射极结构内。 电子发射器可以包括形成在导电衬底上的导电衬底和电子供给层。 电子供应层，例如未掺杂的多晶硅，在其表面上形成突起。 可以控制突起的清晰度和密度。 在电子供给层和突起之上，可以形成绝缘体，从而包围突起。 可以在绝缘体上方形成顶部导电层。 封闭的突起对真空污染相对不敏感。 绝缘体的薄度允许在低的施加电压下产生突起处的高强度电场。 电场增强注入绝缘体，从而通过顶​​层导电层注入电子。 此外，电子束分散和发散最小化。

公开(公告)号：US20030062816A1

公开(公告)日：2003-04-03

申请号：US10253931

申请日：2002-09-25

Inventor： Masahiro Terada ,  Yasuko Tomida ,  Makoto Kojima ,  Tsuyoshi Furuse ,  Taku Shimoda

IPC: H01J001/00

CPC classification number: H01J1/316 ,  H01J9/027

Abstract: An electron-emitting device comprises a pair of opposing electrodes formed on a substrate, an electroconductive film having a fissure arranged between the pair of electrodes, and at least a film having a gap and containing carbon as a main ingredient, arranged at an end portion of the electroconductive film facing the fissure. The fissure is a region of 95% or more of a length in the fissure direction, has a width of from 60 nm or more to 800 nm or less, and has a difference of 300 nm or less between a maximum value and a minimum value of the width, thereby providing high withstanding voltage without forming branched fissure.

Abstract translation: 一种电子发射器件包括一对形成于基片上的相对电极，一对导电膜，该导电膜具有布置在该对电极之间的裂缝，至少具有间隙并含有碳作为主要成分的膜， 的导电膜面对裂缝。 裂缝是裂缝方向长度为95％以上的区域，宽度为60nm以上至800nm以下，并且在最大值和最小值之间具有300nm以下的差 的宽度，从而提供高耐压而不形成分支裂隙。

公开(公告)号：US20020180327A1

公开(公告)日：2002-12-05

申请号：US10125425

申请日：2002-04-19

Applicant: LG Electronics Inc.

Inventor： Byung Mook Weon

IPC: H01J001/00

CPC classification number: H01J1/26 ,  H01J1/20 ,  H01J9/04

Abstract: The present invention relates to a cathode in a cathode ray tube which can shorten a picture presentation time lag and reduce power consumption. The cathode includes an emission layer at an upper part of the cathode and a sleeve for inserting a heater therein, wherein the sleeve contains a blackened material, and has a porous surface.

Abstract translation: 阴极射线管中的阴极技术领域本发明涉及阴极射线管中的阴极，能够缩短图像显示时间延迟并降低功耗。 阴极包括在阴极的上部的发射层和用于在其中插入加热器的套筒，其中套筒包含黑化材料，并且具有多孔表面。