Abstract:
A semi-conductor device, such as diode transistor, field effect transistor with a Schottky barrier, has a separation space formed underneath the insulating film covering a major surface portion of the semiconductor substrate. This separation space is disposed adjacent to a metal layer accommodated in a recess in the substrate and extending through an opening in the insulating film, so as to eliminate unreasonable reverse leakage current, by effectively insulating the Schottky barrier from the electric charge accumulation layer beneath the insulating film.
Abstract:
In a discharge tube of saturated metal vapor pressure type containing high-pressure gaseous or vaporized metals, the temperature of the coolest points existing at both ends of the discharge tube can be raised by forming a layer or layers of a metal or metals of high melting point, low vapor pressure and good thermal conductivity, such as niobium, on the outer wall at the ends of the discharge tube; thereby, providing better radiant emission, especially higher color temperature and an improved color rendering property compared with conventional high-pressure metal-vapor discharge tubes. The discharge tube of the abovementioned construction can be manufactured easily and has a longer life under burning conditions corresponding to those for conventional type high-pressure metal-vapor discharge tubes.
Abstract:
A target assembly of an image pick-up tube including a face plate hermetically fastened on one open end of a tubular envelope of the image pick-up tube through pressure welded binding member composed of indium which is interposed therebetween. A support member supporting therein a target substrate is mounted on the inner surface of the face plate and secured thereto through its peripheral wall combined with the binding member. On the peripheral wall is formed a groove extending circumferentially thereof. The binding member combines with the groove so that the support member favorably fastened to the face plate.
Abstract:
A shadow mask support means including three leaf springs for supporting a rectangular shadow mask on a face panel at three sides of a frame of the mask, said three leaf springs having a predetermined relationship with respect to the spring constant and deflection so that, even when the image tube is subjected to a shock load or the shadow mask in thermally expanded, the change in the relative position of the shadow mask and the face panel is minimized.
Abstract:
A glow discharge tube for code display in which a plurality of cold cathodes in the shape of a plate comprising a segmented portion forming a luminous code and a lead connected to that portion are piled up with a window-frame-shaped insulating plate interposing between each layer to construct a cold cathode structural body and interposing the said lead between the said insulating plates in order to prevent a negative glow at the said lead portion.
Abstract:
In a semiconductor device with a four-layer structure having the so-called thyristor characteristic, when the control electrode for controlling its breakover voltage is constructed by the Schottky barrier and a means to apply a stress to the barrier, the breakover voltage of the said semiconductor device can be controlled by the stress. If this device is assembled in a circuit system, the circuit system can be set to either the ''''off'''' or ''''on'''' state, corresponding to the applied stress.
Abstract:
A deep aluminum-diffused P-type layer and a shallow-diffused layer of a preselected conductivity type are simultaneously diffused into a semiconductor substrate by a double diffusion process which employs a composite impurity source. The composite impurity source consists of an aluminum receptacle having a predetermined amount of at least one shallow diffusing, conductivity type determining impurity enclosed therein. The receptacle may be fabricated from a uniformly thick aluminum foil and the shallow diffusing impurity may consist of, for example, boron, phosphorus, indium and/or antimony.