公开(公告)号：WO9965051A3

公开(公告)日：2000-03-16

申请号：PCT/US9912717

申请日：1999-06-07

Applicant: SYMETRIX CORP ,  MATSUSHITA ELECTRONICS CORP

Inventor： KANO GOTA ,  SHIMADA YASUHIRO ,  HAYASHI SHINICHIRO ,  ARITA KOJI ,  PAZ DE ARAUJO CARLOS A ,  CUCHIARO JOSEPH D ,  MCMILLAN LARRY D

IPC: G02F1/136 ,  G02F1/13357 ,  G09F9/30 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12 ,  H01J1/30

CPC classification number: G02F1/133603

Abstract: A thin film of ferroelectric layered superlattice material in a flat panel display device is energized to selectively influence the display image. In one embodiment, a voltage pulse causes the layered superlattice material to emit electrons that impinge upon a phosphor, causing the phosphor to emit light. In another embodiment, an electric potential creates a remanent polarization in the layered superlattice material, which exerts an electric field in liquid crystal layer, thereby influencing the transmissivity of light through the liquid crystal. The layered superlattice material is a metal oxide formed using an inventive liquid precursor containing an alkoxycarbolyxate. The thin film thickness is preferably in the range of 50-140 nm, so that polarizability and transparency of the thin film is enhanced. A display element may comprise a varistor device to prevent cross-talk between pixels and to enable sudden polarization switching. A functional gradient in the ferroelectric thin film enhances electron emission. Two ferroelectric elements, one on either side of the phosphor may be used to enhance luminescence. A phosphor can be sandwiched between a dielectric and a ferroelectric layer to enhance emission.

Abstract translation: 平板显示装置中的铁电层状超晶格材料薄膜被通电以选择性地影响显示图像。 在一个实施例中，电压脉冲使得层状超晶格材料发射撞击磷光体的电子，导致磷光体发光。 在另一个实施例中，电位在层状超晶格材料中产生剩余极化，其在液晶层中施加电场，从而影响透过液晶的透射率。 层状超晶格材料是使用本发明的含有烷氧基羧酸的液体前体形成的金属氧化物。 薄膜厚度优选在50-140nm的范围内，从而提高了薄膜的极化率和透明度。 显示元件可以包括用于防止像素之间的串扰并允许突发极化切换的变阻器装置。 铁电薄膜中的功能梯度增强了电子发射。 可以使用两个铁电元件，一个在荧光体的两侧，以增强发光。 磷光体可以夹在电介质和铁电层之间以增强发射。

公开(公告)号：US3519479A

公开(公告)日：1970-07-07

申请号：US3519479D

申请日：1966-12-06

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： INOUE MORIO ,  KANO GOTA ,  MATSUNO JINICHI ,  TAKAYANAGI SHIGETOSHI

IPC: C23C16/14 ,  C23C16/16 ,  H01L21/00 ,  H01L27/00 ,  H01L29/00 ,  H01L7/00 ,  H01L7/36

CPC classification number: H01L27/00 ,  C23C16/14 ,  C23C16/16 ,  H01L21/00 ,  H01L29/00 ,  Y10S148/049 ,  Y10S438/909 ,  Y10T428/12528 ,  Y10T428/31678

公开(公告)号：US3634931A

公开(公告)日：1972-01-18

申请号：US3634931D

申请日：1969-12-09

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： KANO GOTA ,  YOKOZAWA MASAMI ,  KAWASAKI TATSUO ,  FUJIWARA SHOHEI ,  HASEGAWA HIROMASA

IPC: G01L1/18 ,  H01L21/00 ,  H01L29/00 ,  H01L29/84 ,  B01J17/00 ,  H01L7/02

CPC classification number: H01L29/84 ,  G01L1/18 ,  H01L21/00 ,  H01L29/00

Abstract: In a semiconductor device with a four-layer structure having the so-called thyristor characteristic, when the control electrode for controlling its breakover voltage is constructed by the Schottky barrier and a means to apply a stress to the barrier, the breakover voltage of the said semiconductor device can be controlled by the stress. If this device is assembled in a circuit system, the circuit system can be set to either the ''''off'''' or ''''on'''' state, corresponding to the applied stress.

Abstract translation: 在具有所谓的晶闸管特性的具有四层结构的半导体器件中，当用于控制其跳变电压的控制电极由肖特基势垒构成并且对屏障施加应力的装置时，所述 半导体器件可以通过应力控制。 如果该设备组装在电路系统中，则电路系统可以设置为对应于施加的应力的“关闭”或“开启”状态。

公开(公告)号：US3591838A

公开(公告)日：1971-07-06

申请号：US3591838D

申请日：1968-12-23

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： FUJIWARA SHOHEI ,  KANO GOTA ,  MATSUOKA SHUNSUKE ,  SAWAKI TSUKASA

IPC: H01L21/00 ,  H01L21/20 ,  H01L21/24 ,  H01L21/28 ,  H01L21/283 ,  H04R1/10 ,  H04R5/033 ,  H01L3/00

CPC classification number: H01L21/28 ,  H01L21/00 ,  H01L21/24 ,  H01L21/283 ,  Y10S148/02

Abstract: In a semiconductor device a metal electrode film formed by an evaporated gold-chromium alloy containing 3 percent to 13 percent by weight of chromium can not only make low ohmic contact with the semiconductor substrate but can be connected to it mechanically firmly. The lead-tin eutectic alloy can be soldered satisfactorily to the metal electrode film without causing erosion even if the electrode film is dipped in a fused solder solution. The semiconductor device with such a gold-chromium alloy film has great industrial merit since the manufacturing steps, particularly the connection of external electrode lead wires, are greatly simplified.

公开(公告)号：US3480475A

公开(公告)日：1969-11-25

申请号：US3480475D

申请日：1967-03-21

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： INOUE MORIO ,  KANO GOTA ,  MATSUNO JINICHI ,  TAKAYANAGI SHIGETOSHI

IPC: C23C16/14 ,  C23C16/16 ,  H01L21/00 ,  H01L27/00 ,  H01L29/00 ,  B44D1/14 ,  B44D1/20

CPC classification number: H01L27/00 ,  C23C16/14 ,  C23C16/16 ,  H01L21/00 ,  H01L29/00 ,  Y10S148/049 ,  Y10S438/909 ,  Y10T428/12528 ,  Y10T428/31678

公开(公告)号：US3543386A

公开(公告)日：1970-12-01

申请号：US3543386D

申请日：1966-09-28

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： INOUE MORIO ,  KANO GOTA

IPC: C03C17/09 ,  C04B37/02 ,  C04B41/51 ,  C04B41/88 ,  C23C16/14 ,  C23C16/16 ,  B23K3/02

CPC classification number: C04B41/88 ,  C03C17/09 ,  C03C2217/263 ,  C03C2218/15 ,  C04B37/026 ,  C04B41/5133 ,  C04B2235/5427 ,  C04B2235/6567 ,  C04B2235/6581 ,  C04B2235/6582 ,  C04B2237/122 ,  C04B2237/125 ,  C04B2237/34 ,  C04B2237/341 ,  C04B2237/343 ,  C04B2237/348 ,  C04B2237/407 ,  C04B2237/704 ,  C04B2237/706 ,  C04B2237/708 ,  C04B2237/72 ,  C04B2237/765 ,  C23C16/14 ,  C23C16/16

Abstract: 1,150,753. Brazing. MATSUSHITA ELECTRONICS CORP. 26 Sept., 1966 [28 Sept., 1965], No. 42915/66. Heading B3R. [Also in Divisions C1 and C7] A gas-tight seal is formed between a metal and a ceramic or a crystallized glass by depositing a film of W or Mo from the vapour phase by reduction of a halide or thermal decomposition of a carbonyl, while maintaining the ceramic or glass at a temperature above 500‹ C., and then brazing the metallized portion to a metal body or a metallized surface. In examples, copper tubes are silver brazed to Mo and W coated ceramic tubes.

公开(公告)号：US3515583A

公开(公告)日：1970-06-02

申请号：US3515583D

申请日：1967-03-20

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： INOUE MORIO ,  KANO GOTA ,  MATSUNO JINICHI ,  TAKAYANAGI SHIGETOSHI

IPC: C23C16/12 ,  H01L21/00 ,  H01L29/00

CPC classification number: H01L21/00 ,  C23C16/12 ,  H01L29/00 ,  Y10S148/142 ,  Y10T428/31678

公开(公告)号：CA1023480A

公开(公告)日：1977-12-27

申请号：CA224731

申请日：1975-04-16

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： UMEBACHI SHOTARO ,  KANO GOTA ,  INOUE MORIO

IPC: H01L21/208 ,  H01L21/306 ,  H01L29/80

公开(公告)号：CA859942A

公开(公告)日：1970-12-29

申请号：CA859942D

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： KANO GOTA ,  IIZUKA MUTSUO ,  FUJIWARA SHOHEI ,  SAWAKI TSUKASA ,  HASEGAWA HIROMASA

公开(公告)号：CA844249A

公开(公告)日：1970-06-09

申请号：CA844249D

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： INOUE MORIO ,  KANO GOTA ,  TAKAYANAGI SHIGETOSHI ,  MATSUNO JINICHI