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1.Method for manufacturing pressure sensitive semiconductor device 失效
Title translation: 制造压力敏感半导体器件的方法公开(公告)号:US3634931A
公开(公告)日:1972-01-18
申请号:US3634931D
申请日:1969-12-09
Applicant: MATSUSHITA ELECTRONICS CORP
Inventor: KANO GOTA , YOKOZAWA MASAMI , KAWASAKI TATSUO , FUJIWARA SHOHEI , HASEGAWA HIROMASA
Abstract: In a semiconductor device with a four-layer structure having the so-called thyristor characteristic, when the control electrode for controlling its breakover voltage is constructed by the Schottky barrier and a means to apply a stress to the barrier, the breakover voltage of the said semiconductor device can be controlled by the stress. If this device is assembled in a circuit system, the circuit system can be set to either the ''''off'''' or ''''on'''' state, corresponding to the applied stress.
Abstract translation: 在具有所谓的晶闸管特性的具有四层结构的半导体器件中,当用于控制其跳变电压的控制电极由肖特基势垒构成并且对屏障施加应力的装置时,所述 半导体器件可以通过应力控制。 如果该设备组装在电路系统中,则电路系统可以设置为对应于施加的应力的“关闭”或“开启”状态。
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公开(公告)号:CA873593A
公开(公告)日:1971-06-15
申请号:CA873593D
Applicant: MATSUSHITA ELECTRONICS CORP
Inventor: FUJIWARA SHOHEI , HASEGAWA HIROMASA , IIZUKA MUTSUO , TERAMOTO IWAO , IWASA HITOO , KANO GOTA
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公开(公告)号:CA859942A
公开(公告)日:1970-12-29
申请号:CA859942D
Applicant: MATSUSHITA ELECTRONICS CORP
Inventor: KANO GOTA , IIZUKA MUTSUO , FUJIWARA SHOHEI , SAWAKI TSUKASA , HASEGAWA HIROMASA
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公开(公告)号:DE1949647A1
公开(公告)日:1970-04-09
申请号:DE1949647
申请日:1969-10-01
Applicant: MATSUSHITA ELECTRONICS CORP
Inventor: KANO GOTA , FUJIWARA SHOHEI , HASEGAWA HIROMASA , IIZUKA MUTSUO , SAWAKI TSUKASA
IPC: A01D41/127 , H01L23/485 , H01L29/00 , H04R23/00 , H01L5/06
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公开(公告)号:DE1541802A1
公开(公告)日:1970-03-26
申请号:DE1541802
申请日:1966-12-23
Applicant: MATSUSHITA ELECTRONICS CORP
Inventor: KAWASAKI TATSUO , HASEGAWA HIROMASA
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公开(公告)号:CA875793A
公开(公告)日:1971-07-13
申请号:CA875793D
Applicant: MATSUSHITA ELECTRONICS CORP
Inventor: YOKOZAWA MASAMI , KANO GOTA , KAWASAKI TATSUO , FUJIWARA SHOHEI , HASEGAWA HIROMASA
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公开(公告)号:CA858744A
公开(公告)日:1970-12-15
申请号:CA858744D
Applicant: MATSUSHITA ELECTRONICS CORP
Inventor: KANO GOTA , IIZUKA MUTSUO , SAWAKI TSUKASA , FUJIWARA SHOHEI , HASEGAWA HIROMASA
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公开(公告)号:CA875237A
公开(公告)日:1971-07-06
申请号:CA875237D
Applicant: MATSUSHITA ELECTRONICS CORP
Inventor: KANO GOTA , FUJIWARA SHOHEI , SAWAKI TSUKASA , HASEGAWA HIROMASA , IIZUKA MUTSUO
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公开(公告)号:DE1949646A1
公开(公告)日:1970-04-30
申请号:DE1949646
申请日:1969-10-01
Applicant: MATSUSHITA ELECTRONICS CORP
Inventor: IIZUKA MUTSUO , FUJIWARA SHOHEI , HASEGAWA HIROMASA , IWASA HITOO , KANO GOTA , TERAMOTO IWAO
IPC: C23F1/02 , C23F1/40 , H01L21/00 , H01L21/306 , H01L23/485 , H01L29/47 , H01L29/872 , H01L7/34
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公开(公告)号:DE1941911A1
公开(公告)日:1970-03-05
申请号:DE1941911
申请日:1969-08-18
Applicant: MATSUSHITA ELECTRONICS CORP
Inventor: KANO GOTA , IIZUKA MUTSUO , FUJIWARA SHOHEI , HASEGAWA HIROMASA , SAWAKI TSUKASA
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