PACKAGE-BASED FILTERING AND MATCHING SOLUTIONS
    51.
    发明申请
    PACKAGE-BASED FILTERING AND MATCHING SOLUTIONS 有权
    基于包的过滤和匹配解决方案

    公开(公告)号:US20090039986A1

    公开(公告)日:2009-02-12

    申请号:US11835960

    申请日:2007-08-08

    Abstract: A microelectronic package having a radio frequency (RF) amplifier circuit and, incorporating harmonic rejection filters and matching circuits integrally formed in the package is disclosed. A harmonic rejection filter may comprise a metal-insulator-metal (MIM) capacitor serially coupled between bond pads disposed on a RF amplifier circuit die, a first wire bond coupling a first bond pad to a package output, where the first bond pad is coupled to the output of the RF amplifier, and a second wire bond coupling a second bond pad to a package ground. The harmonic rejection filter may be appropriately configured to filter one or more harmonics at different frequencies.

    Abstract translation: 公开了一种具有射频(RF)放大器电路并且并入谐波抑制滤波器和整体形成在封装中的匹配电路的微电子封装。 谐波抑制滤波器可以包括串联连接在RF放大器电路管芯上的接合焊盘之间的金属 - 绝缘体 - 金属(MIM)电容器,将第一接合焊盘耦合到封装输出端的第一引线键合,其中第一接合焊盘耦合 到RF放大器的输出,以及将第二接合焊盘耦合到封装地的第二引线接合。 谐波抑制滤波器可以被适当地配置为滤波不同频率的一个或多个谐波。

    Compact integration of LC resonators
    52.
    发明申请
    Compact integration of LC resonators 有权
    LC谐振器紧凑集成

    公开(公告)号:US20070069835A1

    公开(公告)日:2007-03-29

    申请号:US11240305

    申请日:2005-09-29

    CPC classification number: H03H5/02 H01F27/40 H01F2017/0046 H03H2001/0085

    Abstract: A technique to provide a compact integration of inductor-capacitor resonator a capacitor having a top plate and a bottom plate embedding a dielectric layer. The top and bottom plates are substantially parallel to each other. An inductor having a first end is coupled to the capacitor at the bottom plate. The inductor has N turns surrounding the bottom plate in a spiral geometry. The inductor is co-planar to one of the top and bottom plates and ends at a second end.

    Abstract translation: 一种提供电感器 - 电容谐振器紧凑集成的技术,其具有嵌入介电层的顶板和底板的电容器。 顶板和底板基本上彼此平行。 具有第一端的电感器在底板处耦合到电容器。 电感器以螺旋几何形式围绕底板N圈。 电感器与顶板和底板中的一个共面,并在第二端处终止。

    Assembly and manufacturing friendly waveguide launchers

    公开(公告)号:US10468737B2

    公开(公告)日:2019-11-05

    申请号:US15859482

    申请日:2017-12-30

    Abstract: Embodiments include waveguide launchers and connectors (WLCs), and a method of forming a WLC. The WLC has a waveguide connector with a waveguide launcher, a taper, and a slot-line signal converter; and a balun structure on the slot-line signal converter, where the taper is on the slot-line signal converter and a terminal end of the waveguide connector to form a channel and a tapered slot. The WLC may have the waveguide connector disposed on the package, and a waveguide coupled to waveguide connector. The WLC may include assembly pads and external walls of the waveguide connector electrically coupled to package. The WLC may have the balun structure convert a signal to a slot-line signal, and the waveguide launcher converts the slot-line signal to a closed waveguide mode signal, and emits the closed signal along channel and propagates the closed signal along taper slot to the waveguide coupled to waveguide connector.

    DEVICE, SYSTEM AND METHOD FOR PROVIDING MEMS STRUCTURES OF A SEMICONDUCTOR PACKAGE
    60.
    发明申请
    DEVICE, SYSTEM AND METHOD FOR PROVIDING MEMS STRUCTURES OF A SEMICONDUCTOR PACKAGE 有权
    用于提供半导体封装的MEMS结构的器件,系统和方法

    公开(公告)号:US20150084139A1

    公开(公告)日:2015-03-26

    申请号:US14129541

    申请日:2013-09-25

    Abstract: Techniques and mechanisms for providing precisely fabricated structures of a semiconductor package. In an embodiment, a build-up carrier of the semiconductor package includes a layer of porous dielectric material. Seed copper and plated copper is disposed on the layer of porous dielectric material. Subsequent etching is performed to remove copper adjacent to the layer of porous dielectric material, forming a gap separating a suspended portion of a MEMS structure from the layer of porous dielectric material. In another embodiment, the semiconductor package includes a copper structure disposed between portions of an insulating layer or portions of a layer of silicon nitride material. The layer of silicon nitride material couples the insulating layer to another insulating layer. One or both of the insulating layers are each protected from desmear processing with a respective release layer structure.

    Abstract translation: 用于提供半导体封装的精确制造结构的技术和机构。 在一个实施例中,半导体封装的积聚载体包括多孔介电材料层。 种子铜和电镀铜设置在多孔电介质材料层上。 进行随后的蚀刻以去除邻近多孔介电材料层的铜,形成将MEMS结构的悬置部分与多孔介电材料层分开的间隙。 在另一个实施例中,半导体封装包括设置在绝缘层的一部分之间或者氮化硅材料层的一部分的铜结构。 氮化硅材料层将绝缘层耦合到另一绝缘层。 每个绝缘层中的一个或两个保护层不受去离子处理的剥离层结构的剥离。

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