公开(公告)号：KR1020090096408A

公开(公告)日：2009-09-10

申请号：KR1020097005569

申请日：2008-06-06

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 나카지마시게루 ,  하세베카즈히데 ,  초우파오화 ,  이와시타미츠아키 ,  니이노레이지

IPC: H01L21/027 ,  H01L21/3065

CPC classification number: G03F7/405 ,  G03F7/0035 ,  H01L21/02164 ,  H01L21/0228 ,  H01L21/0271 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/32139 ,  G03F7/0755

Abstract: A patterning method comprises a step for forming a first film on a substrate, a step for forming a first resist film on the first film, a step for processing the first resist film into a first resist pattern having a predetermined pitch by photolithography, a step for forming an silicon oxide film on the first resist pattern and the first film by supplying a first gas containing an organic silicon and a second gas containing an activated oxygen species alternately to the substrate, a step for forming a second resist film on the silicon oxide film, a step for processing the second resist film into a second resist pattern having a predetermined pitch by photolithography, and a step for processing the first film by using the first and second resist patterns as a mask.

Abstract translation: 图案化方法包括在基板上形成第一膜的步骤，在第一膜上形成第一抗蚀剂膜的步骤，通过光刻将第一抗蚀剂膜加工成具有预定间距的第一抗蚀剂图案的步骤，步骤 通过将含有有机硅的第一气体和含有活性氧的第二气体交替地供给到所述基板，在所述第一抗蚀剂图案和所述第一膜上形成氧化硅膜，在所述氧化硅上形成第二抗蚀剂膜的步骤 膜，通过光刻将第二抗蚀剂膜加工成具有预定间距的第二抗蚀剂图案的步骤，以及通过使用第一和第二抗蚀剂图案作为掩模来处理第一膜的步骤。

公开(公告)号：KR1020090057023A

公开(公告)日：2009-06-03

申请号：KR1020097005558

申请日：2008-06-06

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 초우파오화 ,  하세베카즈히데 ,  나카지마시게루 ,  아카사카야스시 ,  이와시타미츠아키 ,  니이노레이지

IPC: H01L21/027 ,  H01L21/28 ,  H01L21/3065 ,  H01L21/308

CPC classification number: H01L21/3086 ,  H01L21/0337 ,  H01L21/3088 ,  H01L21/32139 ,  H01L29/66795 ,  G03F7/0035 ,  G03F7/11

Abstract: In a patterning method, a sacrifice film composed of SiBN and different from a thin film is formed on the thin film, and the sacrifice film is patterned at a predetermined interval by photolithography technology. Next, a sidewall spacer composed of a film different from the sacrifice film and the thin film is formed on the sidewall of the patterned sacrifice film, the patterned sacrifice film is removed and then the thin film is processed using the sidewall spacer as a mask.

Abstract translation: 在图案化方法中，在薄膜上形成由SiBN构成的与薄膜不同的牺牲膜，通过光刻技术，以规定的间隔对牺牲膜进行图案化。 接下来，在图案化牺牲膜的侧壁上形成由不同于牺牲膜的膜构成的侧壁间隔物，去除图案化牺牲膜，然后使用侧壁间隔物作为掩模来处理薄膜。

公开(公告)号：KR1019940024934A

公开(公告)日：1994-11-19

申请号：KR1019940008333

申请日：1994-04-20

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 하세베카즈히데

IPC: H01L21/3205