公开(公告)号：KR1020110121917A

公开(公告)日：2011-11-09

申请号：KR1020100041433

申请日：2010-05-03

Applicant: 삼성전자주식회사

Inventor： 마야수브라만야 ,  야스에타카히로 ,  오석환 ,  강율

IPC: H01L21/027

CPC classification number: G03F7/40 ,  G03F7/322 ,  H01L21/0273

Abstract: PURPOSE: A photo resist pattern formation method is provided to appropriately mix a coating polymer and surfactant, thereby improving LWR(Line Width Roughness). CONSTITUTION: A photo resist layer is arranged on the substrate(101). The photo resist layer is exposed using an exposure mask. A back up pattern(112) is arranged by developing the exposed photo resist layer. The surface of the back up pattern is surface-processed with a processing agent including a coating polymer. The surface-processed back up pattern is processed with a cleaning agent including a surfactant.

Abstract translation: 目的：提供光致抗蚀剂图案形成方法以适当地混合涂布聚合物和表面活性剂，从而提高LWR（线宽粗糙度）。 构成：在基板（101）上配置有光刻胶层。 使用曝光掩模曝光光刻胶层。 通过显影曝光的光致抗蚀剂层来布置支撑图案（112）。 背衬图案的表面用包括涂层聚合物的处理剂进行表面处理。 用包括表面活性剂的清洁剂处理表面处理的备用图案。

公开(公告)号：KR1020090115564A

公开(公告)日：2009-11-05

申请号：KR1020080041483

申请日：2008-05-02

Applicant: 삼성전자주식회사

Inventor： 강율 ,  이석주 ,  이중현 ,  이시용

IPC: H01L21/027

CPC classification number: H01L21/027 ,  G03F7/0035 ,  G03F7/40 ,  H01L21/0273 ,  H01L21/0338 ,  H01L21/32139

Abstract: PURPOSE: A method for forming a minute pattern of a semiconductor device by a double patterning process using acid diffusion is provided to form various minute patterns by increasing the density of the pattern. CONSTITUTION: A plurality of first mask patterns are formed(210a). A capping layer including an acid source is formed in a side wall and an upper surface of the first mask patterns(210b). A second mask layer filling a first space is formed on the capping layer(210d). The acid diffusion region from the capping layer to the second mask layer is formed(210e-1). A plurality of second mask patterns comprised of the remaining part of the second mask layer are formed. The capping layer includes a water soluble polymer and the acid source.

Abstract translation: 目的：提供通过使用酸扩散的双重图案化工艺来形成半导体器件的微小图案的方法，以通过增加图案的密度来形成各种微小图案。 构成：形成多个第一掩模图案（210a）。 包含酸源的覆盖层形成在第一掩模图案（210b）的侧壁和上表面中。 在封盖层（210d）上形成填充第一空间的第二掩模层。 形成从覆盖层到第二掩模层的酸扩散区（210e-1）。 形成由第二掩模层的剩余部分组成的多个第二掩模图案。 覆盖层包括水溶性聚合物和酸源。

公开(公告)号：KR100688594B1

公开(公告)日：2007-03-02

申请号：KR1020060104684

申请日：2006-10-26

Applicant: 삼성전자주식회사

Inventor： 최상준 ,  강율

IPC: G03F7/004

Abstract: 축합환의 방향족 환을 포함하는 보호기를 가지는 감광성 폴리머 및 이를 포함하는 레지스트 조성물에 관하여 개시한다. 본 발명에 따른 감광성 폴리머는, 폴리머 백본에 결합되는 보호기로서 산 존재 하에 쉽게 가수분해될 수 있고 다음 식으로 표시되는 축합환의 방향족 환을 포함하는, 산에 의해 분해 가능한 보호기를 포함한다.

식중, R
1 은 수소 원자 또는 C
1 ∼ C
4 의 알킬기이고, X는 수소 원자, 할로겐, 알킬기 또는 알콕시기이고, y는 1 ∼ 3의 정수이고, y = 2 이상일 때 상기 축합환의 방향족 환은 선형환 또는 분기상의 환으로 이루어진다.
측합환, 방향족 환, 감광성 폴리머, 보호기

公开(公告)号：KR1020060118378A

公开(公告)日：2006-11-23

申请号：KR1020060104684

申请日：2006-10-26

Applicant: 삼성전자주식회사

Inventor： 최상준 ,  강율

IPC: G03F7/004

CPC classification number: G03F7/0395 ,  G03F7/0045 ,  G03F7/0397

Abstract: Photosensitive polymer having protective group including fused aromatic ring is provided to have sufficient resistance to dry etching and give excellent etching selectivity to a base layer by comprising the protective group which is bonded to polymer backbone, contains fused aromatic ring of a condensed ring and is easily hydrolyzed by acid. The photosensitive polymer has weight average molecular weight ranging from 3,000 to 50,000, includes fused aromatic ring of condensed ring, and comprises a structure represented by formula, wherein: R1 is hydrogen or alkyl group having carbon atoms ranging from 1 to 4; y is integer of 1 to 3 and, wherein the y is 2, the fused aromatic ring comprises linear ring or branched ring; Z is hydrogen or methyl group; and l/(l+m) ranges from 0.5 to 0.7. A resist composition comprises the above photosensitive polymer together with 0.5 to 10wt.% of PAG(photoacid generator) relative to total weight of the polymer. The composition further contains 0.5 to 50wt.% of organic base such as tertiary amine.

Abstract translation: 提供具有保护基团的熔融芳族环的光敏聚合物以具有足够的耐干腐蚀性，并且通过包含与聚合物主链键合的保护基团，形成具有稠环的稠合芳环并容易地对基底层提供优异的蚀刻选择性 用酸水解。 感光性聚合物的重均分子量为3,000〜50,000，包括稠环的稠合芳香环，并且包含由式表示的结构，其中：R 1为氢或碳原子数为1〜4的烷基; y为1〜3的整数，y为2，稠环为直链或支链; Z是氢或甲基; 和l /（1 + m）的范围为0.5至0.7。 抗蚀剂组合物包含相对于聚合物的总重量的上述感光性聚合物和0.5〜10重量％的PAG（光酸发生剂）。 该组合物还含有0.5〜50重量％的有机碱如叔胺。

公开(公告)号：KR100442859B1

公开(公告)日：2004-08-02

申请号：KR1020010017948

申请日：2001-04-04

Applicant: 삼성전자주식회사

Inventor： 김현우 ,  우상균 ,  강율

IPC: G03F7/033

CPC classification number: G03F7/0758 ,  G03F7/0045 ,  Y10S430/106 ,  Y10S430/115

Abstract: A photosensitive polymer of a resist composition includes a copolymer of alkyl vinyl ether containing silicon and maleic anhydride, represented by the following formula:where R1 is -H, -OSi(CH3)2C(CH3)3 or -OSi(CH3)3; R2 is -H, -OH, -OCOCH3, -OSi(CH3)2C(CH3)3 or -OSi(CH(CH3)2)3; R3 is -H, -OH or -OCOCH3; R4 is -H, -OSi(CH3)2C(CH3)3, -CH2OSi(CH3)2C(CH3)3 or -CH2OSi(CH(CH3)2)3; and at least one of R1, R2, R3 and R4 is a Si-containing group.

Abstract translation: 抗蚀剂组合物的光敏聚合物包括烷基乙烯基醚的含有硅和马来酸酐，由下式表示的共聚物：其中R 1是-H，-OSi（CH 3）2 C（CH 3）3或-OSi（CH3）3; R2是-H，-OH，-OCOCH3，-OSi（CH3）2C（CH3）3或-OSi（CH（CH3）2）3; R3是-H，-OH或-OCOCH3; R4是-H，-OSi（CH3）2C（CH3）3，-CH2OSi（CH3）2C（CH3）3或-CH2OSi（CH（CH3）2）3; 并且R 1，R 2，R 3和R 4中的至少一个是含Si基团。

公开(公告)号：KR1020020023432A

公开(公告)日：2002-03-29

申请号：KR1020000053152

申请日：2000-09-07

Applicant: 삼성전자주식회사

Inventor： 최상준 ,  강율

IPC: G03F7/004

CPC classification number: G03F7/0392 ,  G03F7/0395 ,  Y10S430/106 ,  Y10S430/108 ,  Y10S430/111

Abstract: PURPOSE: Provided are a photosensitive polymer with a protecting group containing fused aromatic ring and the resist composition containing the same polymer. The photosensitive polymer has a protecting group of the following formula (a) bonded to the backbone of the polymer which is easily hydrolyzed by acid. The above fused aromatic ring bonded to the polymer has strong resistance to dry etching and the resist composition shows big difference of solubility in the alkali developing solution between the part of light exposed and the non-exposed, enhancing the increase of the contrast in the resist layer. The above fused aromatic ring has also the property of absorbing UV light making the composition to be suitable for KrF or ArF resist material in the wave length used in patterning a resist layer. And the resist composition with the above fused aromatic ring with strong absorption in a certain energy wave length is used as a material for bottom anti-reflective layer (BARL), enabling it to be used as BARL material in the future ArF lithography. CONSTITUTION: The photosensitive polymer comprises a polymer with the various protection groups, 0.5-10wt.% (based on the above polymer) of photoacid generator (PAG) such as triarylsulfonium salts, diaryliodonium salts, sulfonates and their mixtures and 0.5-50wt.% (based on PAG) organic salts such as triethanolamine, triisobutylamine, triisooctylamine, triisodecylamine and their mixtures. The above various polymers are a polymer of 3,000-200,000 average molecular weight consisting polymer backbone and the protecting group of the formula (a), where R1 is hydrogen atom or C1-C4 alkyl, X is hydrogen atom, halogen, alkyl or alkoxy group, y is an integer of 1-3, when y is more than 2, the above aromatic ring is linear or branching rings; a polymer of 3,000-50,000 average molecular weight represented by formula 1 where Z is hydrogen atom or methyl, m/(m+n) is 0.05-0.4 and other similar backbone polymers of the same average molecular weight represented by formula 2 and 3 and a polymer of 3,000-50,000 average molecular weight represented by formula 4 where Z is hydrogen atom or methyl, m/(m+n) is 0.5-0.7 and n/(m+n) is 0.3-0.5.

Abstract translation: 目的：提供具有含有稠合芳环的保护基的光敏聚合物和含有相同聚合物的抗蚀剂组合物。 感光性聚合物具有与通过酸容易水解的聚合物主链结合的下式（a）的保护基。 上述与聚合物结合的稠合芳环具有很强的抗干蚀刻性，抗蚀剂组合物在曝光部分和未曝光部分之间在碱性显影液中的溶解度差异大，增强抗蚀剂对比度的增加 层。 上述稠合芳环还具有吸收紫外光的性质，使得组合物适用于用于构图抗蚀剂层的波长中的KrF或ArF抗蚀剂材料。 并且使用具有一定能量波长强吸收的上述稠合芳环的抗蚀剂组合物作为底部抗反射层（BARL）的材料，使其能够在将来的ArF光刻中用作BARL材料。 构成：光敏聚合物包含具有各种保护基的聚合物，0.5-10重量％（基于上述聚合物）的光酸产生剂（PAG）如三芳基锍盐，二芳基碘鎓盐，磺酸盐及其混合物和0.5-50wt。％ （基于PAG）有机盐如三乙醇胺，三异丁胺，三异辛胺，三十一烷胺及其混合物。 上述各种聚合物是由具有3000-200,000平均分子量的聚合物组成的聚合物主链和式（a）的保护基，其中R 1是氢原子或C 1 -C 4烷基，X是氢原子，卤素，烷基或烷氧基 y为1-3的整数，当y大于2时，上述芳环为直链或分支环; 其中Z为氢原子或甲基，m /（m + n）为0.05-0.4的由式1表示的平均分子量为3,000-50,000的聚合物，以及由式2和3表示的相同平均分子量的其它类似骨架聚合物，以及 其中Z为氢原子或甲基，m /（m + n）为0.5-0.7，n /（m + n）为0.3-0.5，由式4表示的平均分子量为3,000-50,000的聚合物。

公开(公告)号：KR1020000061889A

公开(公告)日：2000-10-25

申请号：KR1019990011270

申请日：1999-03-31

Applicant: 삼성전자주식회사

Inventor： 강율

IPC: G03F7/004

CPC classification number: G03F7/039 ,  C08F232/08 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0392 ,  G03F7/0395 ,  G03F7/0397 ,  G03F7/0758

Abstract: PURPOSE: A chemical amplified resist composition is provided, which is comprised of blending polymer containing at least of two photosensitive polymers containing anthracene derivative. CONSTITUTION: The photoresist composition comprises; (i) the photosensitive polymer having 2,000- 200,000 of weight average molecular weight represented by the formula I, wherein, R1 is hydrogen or methyl and x/(x+y)=0.1-0.5; (ii) the photosensitive polymer having 2,000-200,000 of weight average molecular weight represented by the formula II, wherein, R2 is hydrogen or methyl, R3 and R4 are independently the group of linear chain of C1-C3 or group containing one group selected from hydroxy group or carboxyl group, m/(m+n)=0.1-0.5; (iii) blending polymer comprised of polymer containing acetal group; and (iv) photoacid generator.

Abstract translation: 目的：提供一种化学放大抗蚀剂组合物，其由含有至少两种含有蒽衍生物的光敏聚合物的共混聚合物组成。 构成：光致抗蚀剂组合物包含： （i）光敏聚合物具有由式I表示的重均分子量为2,000-200,000，其中R1为氢或甲基，x /（x + y）= 0.1-0.5; （ii）具有式II表示的重均分子量为2,000-200,000的感光性聚合物，其中，R 2为氢或甲基，R 3和R 4独立地为C1-C3的直链链或含有选自 羟基或羧基，m /（m + n）= 0.1-0.5; （iii）混合由包含缩醛基的聚合物组成的聚合物; 和（iv）光致酸发生器。

公开(公告)号：KR1020000033702A

公开(公告)日：2000-06-15

申请号：KR1019980050686

申请日：1998-11-25

Applicant: 삼성전자주식회사

Inventor： 강율

IPC: G03F7/031

CPC classification number: G03F7/039 ,  C08F232/08 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0392 ,  G03F7/0395 ,  G03F7/0397 ,  G03F7/0758

Abstract: PURPOSE: A polymer constituting a resist composition of chemically-amplified type and a resist composition including said polymer are provided which have excellent adhesive force to hymen and strong resistance to dry etching in photo lithographic process that can form fine patterns. CONSTITUTION: The polymer constituting the resist composition of chemically-amplified type is a polymer in which an anthracene derivative is introduced into the tert-butoxy carbonyl group, which is expressed in the following formula, for the reinforcement of resistance to dry etching, and the resist composition including said polymer is composed of copolymer or terpolymer, at least two blending polymers, and PGA(PhotoAcid Generator) capable of generating acid at the time of irradiation of light: (chemical formula), wherein l/(l+m+n) = 0.01 - 0.5 and m/(l+m+n) = 0.0 - 0.5, and preferably (l+m)/(l+m+n) = 0.1 - 0.5.

Abstract translation: 目的：提供一种构成化学放大型抗蚀剂组合物的聚合物和包含所述聚合物的抗蚀剂组合物，其对于hymen具有优异的粘合力，并且能够形成精细图案的光刻工艺中的耐蚀刻性强。 构成：构成化学增幅型抗蚀剂组合物的聚合物是其中将蒽衍生物引入到下式中表示的叔丁氧基羰基中用于增强耐干腐蚀性的聚合物，并且 包含所述聚合物的抗蚀剂组合物由共聚物或三元共聚物，至少两种共混聚合物和能够在光照射时产生酸的PGA（PhotoAcid发生器）组成：（化学式），其中l /（1 + m + n ）= 0.01〜0.5，m /（1 + m + n）= 0.0-0.5，优选（1 + m）/（1 + m + n）= 0.1〜0.5。

公开(公告)号：KR100245410B1

公开(公告)日：2000-03-02

申请号：KR1019970065115

申请日：1997-12-02

Applicant: 삼성전자주식회사

Inventor： 최상준 ,  정동원 ,  강율 ,  박춘근

IPC: G03F7/039

CPC classification number: G03F7/0045 ,  C08F220/18 ,  C08F222/06 ,  G03F7/039

Abstract: 본 발명은 화학식 1의 고분자 또는 상기 화학식 1의 고분자를 갖는 공중합체 이상을 포함하는 감광성 폴리머(Photosensitive Polymer)를 제공한다.

식중 R
1 은 C
1 ∼C
20 의 지방족 탄화수소이고, -CH
3 ,-CH
2 CH
3 ,n-부틸 (n-butyl), 시클로헥실(cyclohexyl)기로 이루어지는 군에서 선택되거나 또는 애더맨틸(Adamantyl), 노르보르닐(Norbornyl), 이소보르닐(Isobornyl)기와 같은 C
7 ∼C
20 의 지환식(脂環式)의 지방족 탄화수소(Alicyclic Aliphatic Hydrocarbone)로 이루어지는 군에서 선택되며, n은 정수이다.
또한, 본 발명은 화학식 2의 고분자 및 PAG를 포함하는 화학증폭형 레지스트 조성물을 제공한다.


식중, R
1 은 C
1 ∼C
20 의 지방족 탄화수소이며, R
2 는 H 또는 CH
3 이고, R
3 는 t-부틸(t-butyl) 또는 테트라히드로피라닐(Tetrahydropyranyl)기로 이루어지는 군에서 선택되는 한편, m 및 n은 정수로서 n/(m+n) = 0.1∼0.5 이다.
본 발명에 의하면, 통상의 현상액을 사용하여 현상할 수 있고, 뛰어난 식각내성을 가지며, 막질에 대하여 우수한 접착력을 발휘한다.

公开(公告)号：KR1019990046940A

公开(公告)日：1999-07-05

申请号：KR1019970065115

申请日：1997-12-02

Applicant: 삼성전자주식회사

Inventor： 최상준 ,  정동원 ,  강율 ,  박춘근

IPC: G03F7/039

Abstract: 본 발명은 화학식 1의 고분자 또는 상기 화학식 1의 고분자를 갖는 공중합체 이상을 포함하는 감광성 폴리머(Photosensitive Polymer)를 제공한다.

식중 R
1 은 C
1 ∼C
20 의 지방족 탄화수소이고, -CH
3 ,-CH
2 CH
3 ,n-부틸 (n-butyl), 시클로헥실(cyclohexyl)기로 이루어지는 군에서 선택되거나 또는 애더맨틸(Adamantyl), 노르보르닐(Norbornyl), 이소보르닐(Isobornyl)기와 같은 C
7 ∼C
20 의 지환식(脂環式)의 지방족 탄화수소(Alicyclic Aliphatic Hydrocarbone)로 이루어지는 군에서 선택되며, n은 정수이다.
또한, 본 발명은 화학식 2의 고분자 및 PAG를 포함하는 화학증폭형 레지스트 조성물을 제공한다.


식중, R
1 은 C
1 ∼C
20 의 지방족 탄화수소이며, R
2 는 H 또는 CH
3 이고, R
3 는 t-부틸(t-butyl) 또는 테트라히드로피라닐(Tetrahydropyranyl)기로 이루어지는 군에서 선택되는 한편, m 및 n은 정수로서 n/(m+n) = 0.1∼0.5 이다.
본 발명에 의하면, 통상의 현상액을 사용하여 현상할 수 있고, 뛰어난 식각내성을 가지며, 막질에 대하여 우수한 접착력을 발휘한다.