公开(公告)号：KR1020090102555A

公开(公告)日：2009-09-30

申请号：KR1020080028068

申请日：2008-03-26

Applicant: 삼성전자주식회사 ,  재단법인서울대학교산학협력재단

Inventor： 황수정 ,  유하영 ,  김덕기 ,  성정헌 ,  주영창 ,  정성엽

IPC: H01L23/62

CPC classification number: H01L23/5256 ,  H01L2924/0002 ,  H01L2924/00

Abstract: PURPOSE: An electrical fuse device and method of operating the same are provided to use the existing processing of semiconductor device using the material of the metal gate of the cell region or the metal wiring. CONSTITUTION: The electrical fuse device includes the cathode(100) and the anode(200), and the fuse link(150). The cathode is separated from the anode. The fuse link connects a cathode and anode. The fuse link includes laminated two metal layers. The number of the metal layer which becomes blowing is changed according to the voltage applied in the fuse link and the intensity.

Abstract translation: 目的：提供一种电熔丝装置及其操作方法，以使用半导体器件的现有处理，其使用电池区域的金属栅极或金属布线的材料。 构成：电熔丝装置包括阴极（100）和阳极（200）以及熔断体（150）。 阴极与阳极分离。 熔断体连接阴极和阳极。 熔断体包括层压的两层金属层。 根据施加在熔断体中的电压和强度，变成吹塑的金属层的数量变化。

公开(公告)号：KR1020090037690A

公开(公告)日：2009-04-16

申请号：KR1020070103164

申请日：2007-10-12

Applicant: 삼성전자주식회사

Inventor： 김석필 ,  박윤동 ,  김덕기 ,  김원주 ,  진영구 ,  이승훈

IPC: H01L27/115 ,  H01L21/8247

CPC classification number: H01L27/115 ,  G11C16/0483 ,  H01L21/28273 ,  H01L21/28282 ,  H01L21/8221 ,  H01L21/84 ,  H01L27/0688 ,  H01L27/11521 ,  H01L27/11524 ,  H01L27/11551 ,  H01L27/11556 ,  H01L27/11568 ,  H01L27/11578 ,  H01L27/11582 ,  H01L27/1203 ,  H01L29/42328 ,  H01L29/42336 ,  H01L29/42344 ,  H01L29/42352 ,  H01L29/66825 ,  H01L29/66833 ,  H01L21/31051

Abstract: A non-volatile memory device, a method of operating the same and method of fabricating the same is provided to obtain high operation speed by using a recess structure and a trench. A semiconductor layer(105) comprises a first area(102) and a second area(104), a plurality of control gate electrodes(150) is arranged inside the semiconductor substrate. A plurality of charge storage layers(130) is interposed between the control gate electrodes and the semiconductor layer. The charge storage layers are used as a charge storage medium for data program, and a plurality of tunneling insulation layers(120) is interposed between the semiconductor layer and the charge storage layers. A tunneling insulation layers are used as a tunneling route of an electric charge, and a blocking insulating layer(140) is interposed between the charge storage layers and the control gate electrodes. A first auxiliary electrode(170a) and a second auxiliary electrode(170b) are arranged to be opposite to each other.

Abstract translation: 提供非易失性存储器件，其操作方法和制造方法，以通过使用凹陷结构和沟槽来获得高操作速度。 半导体层（105）包括第一区域（102）和第二区域（104），多个控制栅电极（150）布置在半导体衬底的内部。 多个电荷存储层（130）插入在控制栅电极和半导体层之间。 电荷存储层用作数据程序的电荷存储介质，并且在半导体层和电荷存储层之间插入多个隧穿绝缘层（120）。 使用隧道绝缘层作为电荷的隧道路径，并且在电荷存储层和控制栅极之间插入阻挡绝缘层（140）。 第一辅助电极（170a）和第二辅助电极（170b）被布置成彼此相对。

公开(公告)号：KR1020070059666A

公开(公告)日：2007-06-12

申请号：KR1020050118762

申请日：2005-12-07

Applicant: 삼성전자주식회사

Inventor： 조영권 ,  장영빈 ,  우정수 ,  김덕기 ,  장재혁 ,  박동식 ,  최준영 ,  정수룡 ,  지안하이린 ,  젱수펭

IPC: H04B7/26 ,  H04B7/212

CPC classification number: H04W52/146 ,  H04W52/24 ,  H04W52/242 ,  H04W52/243 ,  H04W52/248 ,  H04L5/14 ,  Y02D70/00

Abstract: A power control method of a TDD(Time Division Duplex) communication system and a device thereof are provided to offer an excellent-performance power control method without requiring a separate feedback value, with regards to noncontinuous uplink channels that many users temporally separate and occupy one channel, thereby supporting noncontinuous uplink users. Uplink power determiners(1115,1116) determine uplink power values by using the quantity of external cell interference received from a base station, power control calculation factors of the current frame obtained by using power increase/decrease variation estimated through downlink, and power control calculation factors of a previous frame. An uplink power controller(1117) transmits the uplink power values to a transmitter to control uplink power.

Abstract translation: 提供TDD（时分双工）通信系统及其装置的功率控制方法，以提供优异的功率控制方法，而不需要单独的反馈值，关于许多用户在时间上分离并占用一个的非连续上行链路信道 通道，从而支持非连续上行用户。 上行功率确定器（1115,1116）通过使用从基站接收的外部小区干扰的数量来确定上行链路功率值，通过使用通过下行链路估计的功率增加/减少变化获得的当前帧的功率控制计算因子和功率控制计算 前一帧的因素 上行链路功率控制器（1117）将上行链路功率值发送到发射机以控制上行链路功率。