公开(公告)号：KR100500469B1

公开(公告)日：2005-07-12

申请号：KR1020010001733

申请日：2001-01-12

Applicant: 삼성전자주식회사

Inventor： 송원 ,  김성일 ,  한상일 ,  이창훈 ,  김정희

IPC: H01L21/027

CPC classification number: H01L23/544 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2223/5446 ,  H01L2924/0002 ,  Y10S438/975 ,  H01L2924/00

Abstract: 본 발명은 정렬시스템에 대응하여 웨이퍼를 정렬 위치시키도록 하기 위한 정렬마크와 이를 이용한 노광정렬시스템 및 그 정렬방법에 관한 것으로서, 이를 구현하기 위한 정렬마크는, 화학적 기계적 폴리싱 공정이 적용되는 층의 하부층 내에 메사 또는 트렌치 형상의 단위마크가 소정 간격으로 복수개 배열되어 정렬 공정시 정렬신호를 형성하는 정렬마크에 있어서, 상기 단위마크 내에 화학적 기계적 폴리싱 공정시 디싱 현상을 방지하기 위한 정도의 밀도로 적어도 하나 이상의 메사 또는 트렌치 패턴이 인라인 배열되어 이루어진다. 이에 따르면 종래 정렬마크의 각 단위마크 범위 내에 메사 또는 트렌치 패턴이 배열되어 조사되는 소정 파장의 광과 다른 파장의 광에 대응하여 세분하여 각각의 정렬 위치가 검출하게 됨으로써 종래의 정렬시스템을 호환할 수 있을 뿐 아니라 보다 향상된 정확도로 신뢰도가 향상되며, 화학적 기계적 폴리싱 공정에 대응하여 충분한 밀도를 이루어 디싱 현상이 방지되는 등의 효과가 있다.

公开(公告)号：KR1020030062718A

公开(公告)日：2003-07-28

申请号：KR1020020003067

申请日：2002-01-18

Applicant: 삼성전자주식회사

Inventor： 김정희

IPC: H01L21/027

Abstract: PURPOSE: Semiconductor wafer exposure equipment with focus error prevention capability is provided to effectively eliminate the particles existing on the upper surface of a wafer fixing chuck by improving the structure of the wafer fixing chuck. CONSTITUTION: A wafer supporting pin(31) for settling a wafer is installed in a protrusion(33a) inside a wafer cleaning apparatus(30). The wafer cleaning apparatus includes a chamber in which a vacuum absorbing member for removing the particles existing on the bottom of the wafer through vacuum absorption is installed. A vacuum line(41a) is formed in the vacuum absorbing member. A stem(41) transfers vertically and rotates in a predetermined direction by a drive unit. A disc plate(43) extends to the upper surface of the stem and includes a plurality of vacuum holes(43a) connected to the vacuum line.

Abstract translation: 目的：提供具有聚焦误差防护能力的半导体晶片曝光设备，通过改善晶片固定卡盘的结构，有效地消除晶片固定卡盘上表面上存在的颗粒。 构成：用于沉淀晶片的晶片支撑销（31）安装在晶片清洁装置（30）内的突起（33a）中。 晶片清洗装置包括一个室，其中安装有用于通过真空吸收除去存在于晶片底部的颗粒的真空吸收件。 在真空吸收件中形成真空管线（41a）。 杆（41）通过驱动单元垂直地传送并沿预定方向旋转。 盘片（43）延伸到杆的上表面并且包括连接到真空管线的多个真空孔（43a）。

公开(公告)号：KR1020030051064A

公开(公告)日：2003-06-25

申请号：KR1020010081963

申请日：2001-12-20

Applicant: 삼성전자주식회사

Inventor： 이대성 ,  손국태 ,  김정희 ,  이재철

IPC: H01L21/66

CPC classification number: H01L22/20

Abstract: PURPOSE: A method for measuring fail probability by only defect, method for measuring defect limited yield using classification the extracted defect pattern's parameter, and system for measuring fail probability by only defect and the defect limited yield are provided to be capable of obtaining fail probability by the inspected block and by the wafer chip using defect inspection data alone. CONSTITUTION: A plurality of defect generated chips are firstly divided into the first chip group having fail and the second chip group having no fail(S1). The defect generated chips are secondly divided using the first maximum value out of the total sum of the size of defects located in the left and right peripheral region of X-axis as a reference(S21,S22). When the first maximum value is lower than the first reference value, the third dividing process is carried out using the second maximum value out of the total sum of the size of defects by the segment as a reference(S31,S32). When the second maximum value is lower than the second reference value, the fourth dividing process is carried out using the total sum of the surface of defects located in a chip as a reference(S41,S42).

Abstract translation: 目的：仅通过缺陷测量失败概率的方法，使用分类提取的缺陷模式参数来测量缺陷有限产量的方法，以及仅通过缺陷测量失败概率的系统，并且提供缺陷有限收益以能够通过 检查块和晶片芯片仅使用缺陷检查数据。 构成：首先将多个缺陷产生的芯片分成具有故障的第一芯片组和没有故障的第二芯片组（S1）。 使用位于X轴的左右周围区域的缺陷的总和的总和中的第一最大值作为基准，将缺陷产生的芯片二次分割（S21，S22）。 当第一最大值低于第一参考值时，使用该段作为参考的缺陷大小的总和中的第二最大值来执行第三分割处理（S31，S32）。 当第二最大值低于第二参考值时，使用位于芯片中的缺陷表面的总和作为基准来执行第四分割处理（S41，S42）。

公开(公告)号：KR1020020040448A

公开(公告)日：2002-05-30

申请号：KR1020000070494

申请日：2000-11-24

Applicant: 삼성전자주식회사

Inventor： 김정희

IPC: H01L21/027

Abstract: PURPOSE: A developing apparatus capable of controlling a temperature of development solution and a developing method are provided to improve the inequality of critical dimension occurring in development processing by installing a temperature controller controlling a temperature of development solution. CONSTITUTION: A developing apparatus comprises a sealed reaction chamber(150), a chuck part(100) located in the lower portion of the sealed reaction chamber(150), a wafer(110) on the chuck part(100), a nozzle part(130) capable of spraying a development solution on the wafer(110) located on the upper portion of the sealed reaction chamber(150), and a temperature controller(140) having thermal-detection sensors(142) and thermal-controllers(144) located over the wafer(110) in the sealed reaction chamber(150). At this point, the temperature of the development solution is controlled uniformly.

Abstract translation: 目的：提供一种能够控制显影液的温度的显影装置和显影方法，通过设置控制显影液温度的温度控制器来提高显影处理中出现的临界尺寸的不均匀性。 构成：显影装置包括密封反应室（150），位于密封反应室（150）的下部的卡盘部分（100），卡盘部分（100）上的晶片（110），喷嘴部分 （130），其能够在位于所述密封反应室（150）的上部的所述晶片（110）上喷涂显影溶液;以及温度控制器（140），其具有热检测传感器（142）和热控制器（144） ）位于密封反应室（150）中的晶片（110）上方。 此时，均匀地控制显影液的温度。

公开(公告)号：KR100314089B1

公开(公告)日：2001-12-28

申请号：KR1019940018933

申请日：1994-07-30

Applicant: 삼성전자주식회사

Inventor： 김정희

IPC: G11B7/26

Abstract: PURPOSE: A system of monitoring a developed state of a glass disk photoresist for manufacturing an optical disk is provided to use a CCD to sense information on a diffracted light passing through a glass disk, and to calculate the developed state of the photoresist as data by a controller on the basis of the information. CONSTITUTION: A reflector(22) is set between a light source and a glass disk(12). A CCD(20) senses information on a diffracted light, which is irradiated from the light source and passes through the glass disk(12). A controller(25) calculates a developed state of a photoresist applied to the glass disk(12) as data by the sensed information.

公开(公告)号：KR1020010087502A

公开(公告)日：2001-09-21

申请号：KR1020000011259

申请日：2000-03-07

Applicant: 삼성전자주식회사

Inventor： 유경희 ,  한관수 ,  이태형 ,  김은지 ,  김정희 ,  장우혁

IPC: C08G73/10

CPC classification number: C07D487/04 ,  C07C217/90 ,  C08G73/105 ,  G02B1/045 ,  C08L79/08

Abstract: PURPOSE: Provided are an optical polyimide monomer and an optical polyimide compound, having low light-absorption loss and high heat-resistance and preventing cleavage of a thin film in an etching process, and a preparation thereof. CONSTITUTION: The optical polyimide monomer (formula 1) is produced by a process comprising the steps of: dissolving diol and 2-chloro-5-nitrobenzotrifluoride in N,N-dimethylacetamide; adding potassium carbonate, t-butylammonium chloride, and copper powder to the resultant and heating; eliminating the copper from the resultant and precipitating and recrystallizing in acetic acid to obtain a dinitro compound; dissolving the dinitro compound in tetrahydrofurane and reducing in the presence of a catalyst. And the polyimide compound (formula 3) is produced by a process comprising the steps of: dissolving the polyimide monomer (formula 1) and a dianhydride (formula 2) in dimethylacetamide; stirring the resultant under nitrogen to form polyamic acid; coating a silicon substrate with the polyamic acid; heating the polyamic acid coated substrate. In the formula, X is chlorine, bromine, or halogenated alkyl, Ar is an aromatic ring group or a halogenated aromatic ring group, Z is partially/wholly fluorinated or chlorinated aromatic cyclic group, partially/wholly fluorinated or chlorinated ring type aliphatic group, partially/wholly fluorinated or chlorinated aliphatic group, or a connection structure thereof connected by a hetero atom.

Abstract translation: 目的：提供光刻聚酰亚胺单体和光学聚酰亚胺化合物，其光吸收损失低，耐热性高，防止蚀刻工序中的薄膜破裂及其制备。 构成：光学聚酰亚胺单体（式1）通过包括以下步骤的方法制备：将二醇和2-氯-5-硝基三氟甲苯溶解在N，N-二甲基乙酰胺中; 向所得物中加入碳酸钾，叔丁基氯化铵和铜粉末并加热; 消除所得的铜并在乙酸中沉淀并重结晶得到二硝基化合物; 将二硝基化合物溶解在四氢呋喃中并在催化剂存在下还原。 并且通过包括以下步骤的方法制备聚酰亚胺化合物（式3）：将聚酰亚胺单体（式1）和二酐（式2）溶解在二甲基乙酰胺中; 在氮气下搅拌得到聚酰胺酸; 用聚酰胺酸涂覆硅衬底; 加热聚酰胺酸涂覆的基材。 在该式中，X为氯，溴或卤代烷基，Ar为芳环基或卤代芳环，Z为部分/全氟化或氯化芳环，部分/全氟化或氯代环型脂族基， 部分/全氟化或氯化脂族基团，或其通过杂原子连接的连接结构。

公开(公告)号：KR1020010003112A

公开(公告)日：2001-01-15

申请号：KR1019990023274

申请日：1999-06-21

Applicant: 삼성전자주식회사

Inventor： 장우혁 ,  김현기 ,  김정희 ,  이용우 ,  이태형

IPC: G02B26/08

CPC classification number: G02F1/3137 ,  G02F1/011 ,  G02F1/0147 ,  G02F2001/0113

Abstract: PURPOSE: A method for manufacturing a hot optical switch is provided to have a switch speed lower than a specific degree and to have a low driving power by decreasing a distance of an electrode, waveguide and heat sink as well as reducing combination loss with an optical fiber lower than 0.5dB/facet. CONSTITUTION: Both specific areas for positioning input/output tapers on a heat sink substrate(610) are etched to 10-15 micrometers in depth. A lower clad layer(620) is formed on the substrate. The input/output tapers are formed by photolithography and etching of the lower clad layer. A core layer(630) with a specific thickness is formed on the lower clad layer by using a material having a refractive index of 1-2% with the lower clad layer. A rib core is formed on the core layer through photolithography and etching. Then, an upper clad layer(640) is formed on the core layer by using a material having a refractive index of 1-15% with the core layer. Finally, a conductive metal film is put on the upper clad layer and an electrode(650) is formed by photolithography and etching.

Abstract translation: 目的：提供一种用于制造热光开关的方法，其具有低于特定程度的开关速度并且通过减小电极，波导和散热器的距离以及通过光学器件减少组合损耗而具有低驱动功率 光纤低于0.5dB /面。 构成：用于在散热基板（610）上定位输入/输出锥度的特定区域被深刻地蚀刻到10-15微米。 在基板上形成下包层（620）。 输入/输出锥形通过光刻和下覆盖层的蚀刻形成。 通过使用折射率为1-2％的材料与下包层在下包层上形成具有特定厚度的芯层（630）。 通过光刻和蚀刻在芯层上形成肋芯。 然后，通过使用具有核心层的折射率为1-15％的材料，在芯层上形成上覆层（640）。 最后，在上覆盖层上放置导电金属膜，通过光刻和蚀刻形成电极（650）。

公开(公告)号：KR1020000041716A

公开(公告)日：2000-07-15

申请号：KR1019980057671

申请日：1998-12-23

Applicant: 삼성전자주식회사

Inventor： 김길용 ,  김성일 ,  김동현 ,  김정희

IPC: H01L21/027

Abstract: PURPOSE: An index table of a spinner is provided to prevent a mechanical contact between an index table and a guide plate in a spinner used for applying a predetermined coating solution on a semiconductor wafer. CONSTITUTION: An index table of a spinner is to load a spinner for receiving a plurality of semiconductor wafer. An index table(10) is installed on a spinner for applying photoresist on a semiconductor wafer. Guide plates(20,21) are installed at both sides the index table. The index table is moved toward a vertical direction by the guide plates. An interval between the guide plates and the index table is more than 5mm. The index table is descended by a cylinder for relaxing an impact.

Abstract translation: 目的：提供旋转器的索引表，以防止用于在半导体晶片上施加预定涂层溶液的旋转器中的分度台与引导板之间的机械接触。 构成：旋转器的索引表是加载用于接收多个半导体晶片的旋转器。 索引表（10）安装在用于在半导体晶片上施加光致抗蚀剂的旋转器上。 导板（20,21）安装在索引表的两侧。 分度台通过导板向垂直方向移动。 导板与分度台之间的间隔大于5mm。 索引表由圆柱下降以放松影响。

公开(公告)号：KR1020000024739A

公开(公告)日：2000-05-06

申请号：KR1019980041396

申请日：1998-10-01

Applicant: 삼성전자주식회사

Inventor： 김정희 ,  이경수 ,  조영진 ,  김동현

IPC: H01L21/027

Abstract: PURPOSE: An apparatus for dispensing developer having a wafer type nozzle is provided to reduce the amount of developer by using a structure comprising a rotary table, a rotator, and a rotary dispenser. CONSTITUTION: An apparatus for dispensing developer having a wafer type nozzle comprises a rotary table(120) for locating a wafer, a rotator(130) for rotating the rotary table, and a rotary dispenser(140) for dispensing developer(150) on the wafer. The rotary dispenser comprises a wafer type nozzle(144) and a support device(142). The wafer type nozzle is formed with a multitude of injection holes corresponding to a front face of the wafer. The supporter supports the wafer type nozzle and supplies the developer. The developer is dispensed on the wafer through the wafer type nozzle.

Abstract translation: 目的：提供一种用于分配具有晶片型喷嘴的显影剂的设备，以通过使用包括旋转台，旋转器和旋转分配器的结构来减少显影剂的量。 用于分配具有晶片型喷嘴的显影剂的装置包括用于定位晶片的旋转台（120），用于旋转旋转台的旋转器（130），以及用于在显影剂上分配显影剂的旋转分配器（140） 晶圆。 旋转分配器包括晶片型喷嘴（144）和支撑装置（142）。 晶片型喷嘴形成有与晶片的正面对应的多个喷射孔。 支持者支持晶圆型喷嘴并提供显影剂。 显影剂通过晶片型喷嘴分配在晶片上。

公开(公告)号：KR100230236B1

公开(公告)日：1999-11-15

申请号：KR1019940018923

申请日：1994-07-30

Applicant: 삼성전자주식회사

Inventor： 강동헌 ,  김정희

IPC: G11B7/09

Abstract: 본 발명은 컴팩트 디스크, 레이저 디스크 플레이어 등의 광 디스크의 포커싱 서보 장치에 관한 것으로, 상세하게는 광 디스크 상에 정보를 기록하거나 읽어내는 광 디스크 정보 기록 재생에 있어서 포커싱을 최적화 시키기 위한 포커싱 서보 장치에 관한 것이다.
즉, 본 발명에 따른 광 디스크의 포커싱 서보 장치는 로우 패스필터를 채용하여 두 개의 스위치 절환 불일치에 의한 포커싱 이탈 현상을 억제하여 안정된 포커싱이 일어날 수 있도록 하여 주는 장점이 있다.
또한 로우 패스 필터가 포커스 에러 검출기에서 검출된 신호를 감쇠시켜 주므로 정상적인 포커싱이 보다 빠르게 구현되는 효과도 있다.