公开(公告)号：KR100561864B1

公开(公告)日：2006-03-17

申请号：KR1020040013562

申请日：2004-02-27

Applicant: 삼성전자주식회사

Inventor： 임승모 ,  유경희 ,  정재우

IPC: B41J2/16

CPC classification number: B41J2/162 ,  B41J2/1606 ,  B41J2/1628 ,  B41J2/1642 ,  B41J2/1646

Abstract: 잉크젯 프린트헤드의 노즐 플레이트 표면에 소수성 코팅막을 형성하는 방법이 개시된다. 개시된 소수성 코팅막 형성 방법은, 다수의 노즐이 형성된 노즐 플레이트를 준비하는 단계와, 노즐 플레이트의 표면에 금속층을 형성하는 단계와, 금속층을 덮는 보호막을 형성하는 단계와, 보호막을 선택적으로 식각하여 금속층 중 노즐 플레이트의 바깥쪽 표면에 형성된 부분을 노출시키는 단계와, 노즐 플레이트를 황 화합물이 함유된 용액 내에 침지하여 노출된 금속층의 표면에 황 화합물로 이루어진 소수성 코팅막을 형성하는 단계를 구비한다. 이와 같은 본 발명에 의하면, 노즐 플레이트의 바깥쪽 표면에만 선택적으로 균일한 소수성 코팅막을 용이하게 형성할 수 있게 되므로, 노즐을 통한 잉크 액적의 토출 성능이 향상된다.

公开(公告)号：KR100319299B1

公开(公告)日：2002-01-05

申请号：KR1019990013153

申请日：1999-04-14

Applicant: 삼성전자주식회사

Inventor： 유경희 ,  한관수 ,  이태형

IPC: C08G73/10

CPC classification number: C08G73/1042 ,  C08G73/10 ,  C08G73/1039 ,  G02B1/046 ,  C08L79/08

Abstract: 본발명은화학식 1로표시되는광통신용폴리이미드를제공한다. 상기식중, n은 1 내지 39의정수이다. 본발명의폴리이미드는근적외선영역에서의광흡수손실이작고우수한내열성과가공성을가지고있으면서굴절율증가에따른광흡수손실증가와낮은표면장력으로인하여필름의접착성과코팅성이저하되는것을효율적으로막을수 있다. 이러한폴리이미드를도파층형성용재료로사용하면완충층재료선택의폭이넓어진다.

公开(公告)号：KR1020010087502A

公开(公告)日：2001-09-21

申请号：KR1020000011259

申请日：2000-03-07

Applicant: 삼성전자주식회사

Inventor： 유경희 ,  한관수 ,  이태형 ,  김은지 ,  김정희 ,  장우혁

IPC: C08G73/10

CPC classification number: C07D487/04 ,  C07C217/90 ,  C08G73/105 ,  G02B1/045 ,  C08L79/08

Abstract: PURPOSE: Provided are an optical polyimide monomer and an optical polyimide compound, having low light-absorption loss and high heat-resistance and preventing cleavage of a thin film in an etching process, and a preparation thereof. CONSTITUTION: The optical polyimide monomer (formula 1) is produced by a process comprising the steps of: dissolving diol and 2-chloro-5-nitrobenzotrifluoride in N,N-dimethylacetamide; adding potassium carbonate, t-butylammonium chloride, and copper powder to the resultant and heating; eliminating the copper from the resultant and precipitating and recrystallizing in acetic acid to obtain a dinitro compound; dissolving the dinitro compound in tetrahydrofurane and reducing in the presence of a catalyst. And the polyimide compound (formula 3) is produced by a process comprising the steps of: dissolving the polyimide monomer (formula 1) and a dianhydride (formula 2) in dimethylacetamide; stirring the resultant under nitrogen to form polyamic acid; coating a silicon substrate with the polyamic acid; heating the polyamic acid coated substrate. In the formula, X is chlorine, bromine, or halogenated alkyl, Ar is an aromatic ring group or a halogenated aromatic ring group, Z is partially/wholly fluorinated or chlorinated aromatic cyclic group, partially/wholly fluorinated or chlorinated ring type aliphatic group, partially/wholly fluorinated or chlorinated aliphatic group, or a connection structure thereof connected by a hetero atom.

Abstract translation: 目的：提供光刻聚酰亚胺单体和光学聚酰亚胺化合物，其光吸收损失低，耐热性高，防止蚀刻工序中的薄膜破裂及其制备。 构成：光学聚酰亚胺单体（式1）通过包括以下步骤的方法制备：将二醇和2-氯-5-硝基三氟甲苯溶解在N，N-二甲基乙酰胺中; 向所得物中加入碳酸钾，叔丁基氯化铵和铜粉末并加热; 消除所得的铜并在乙酸中沉淀并重结晶得到二硝基化合物; 将二硝基化合物溶解在四氢呋喃中并在催化剂存在下还原。 并且通过包括以下步骤的方法制备聚酰亚胺化合物（式3）：将聚酰亚胺单体（式1）和二酐（式2）溶解在二甲基乙酰胺中; 在氮气下搅拌得到聚酰胺酸; 用聚酰胺酸涂覆硅衬底; 加热聚酰胺酸涂覆的基材。 在该式中，X为氯，溴或卤代烷基，Ar为芳环基或卤代芳环，Z为部分/全氟化或氯化芳环，部分/全氟化或氯代环型脂族基， 部分/全氟化或氯化脂族基团，或其通过杂原子连接的连接结构。

公开(公告)号：KR1020120078025A

公开(公告)日：2012-07-10

申请号：KR1020100140183

申请日：2010-12-31

Applicant: 주식회사 한솔케미칼 ,  삼성전자주식회사

Inventor： 박정우 ,  김준영 ,  조보연 ,  유경희 ,  채수두 ,  김윤수 ,  조윤정 ,  최한메 ,  황기현

IPC: C07F7/00 ,  C07F7/30 ,  C07F17/00 ,  C23C16/18

CPC classification number: C23C16/40 ,  C07F7/28 ,  C07F19/00 ,  C23C16/401 ,  C23C16/45525

Abstract: PURPOSE: A novel single organic metal precursor compound is provided to enhance volatility and to usefully deposit single metal oxide(TiO_2,ZrO_2,HfO_2), and complex metal oxide(ZrSiOx,HfSiOx) thin film. CONSTITUTION: An organic metal precursor compound for deposition of a metal oxide or metal-silicon oxide thin film is denoted by chemical formula 1. The organic metal precursor compound o chemical formula 1 contains an organic metal precursor of chemical formulas 2 or 3. A thin film deposition method is used for forming metal thin film, metal oxide thin film or metal-silicon oxide thin film using the precursor compound. The thin film is performed by ALD(atomic layer deposition) or MOCVD(metal organic chemical vapor deposition).

Abstract translation: 目的：提供新颖的单一有机金属前体化合物，以提高挥发性，有效沉积单一金属氧化物（TiO_2，ZrO_2，HfO_2）和复合金属氧化物（ZrSiOx，HfSiOx）薄膜。 构成：用于沉积金属氧化物或金属 - 氧化硅薄膜的有机金属前体化合物由化学式1表示。化学式1的有机金属前体化合物含有化学式2或3的有机金属前体。薄的 使用前体化合物形成金属薄膜，金属氧化物薄膜或金属 - 氧化硅薄膜的成膜方法。 薄膜由ALD（原子层沉积）或MOCVD（金属有机化学气相沉积）进行。

公开(公告)号：KR1020050025481A

公开(公告)日：2005-03-14

申请号：KR1020030062709

申请日：2003-09-08

Applicant: 삼성전자주식회사

Inventor： 유경희

IPC: G03F7/00

Abstract: A mask pattern obtained by a dipole aperture illumination system is provided to prevent merging in photoresist by reducing the size of a mask pattern in the direction of dipole aperture arrangement and widening the space between the mask patterns, and thus to reduce or minimize faults in overlay measurement. The overlay mask pattern obtained by dipole aperture illumination comprises a plurality of dot type patterns(110) with a certain size and space, which are periodically formed on a wafer, wherein the space between the dot type patterns is at least 0.4 micrometers or more in the direction of dipole aperture arrangement.

Abstract translation: 通过偶极孔照明系统获得的掩模图案被提供以防止在光电二极管方向上减小掩模图案的尺寸并扩大掩模图案之间的空间，从而减少或最小化覆盖层中的故障 测量。 通过偶极孔照明获得的覆盖掩模图案包括周期性地形成在晶片上的具有一定尺寸和空间的多个点型图案（110），其中点型图案之间的间距至少为0.4微米或更大 偶极孔布置方向。

公开(公告)号：KR1020030093812A

公开(公告)日：2003-12-11

申请号：KR1020020031672

申请日：2002-06-05

Applicant: 삼성전자주식회사

Inventor： 김희곤 ,  정선태 ,  송영휘 ,  조정환 ,  한동균 ,  유경희

IPC: G02B6/36

Abstract: PURPOSE: A method for fabricating an optical connecting element is provided to connect an optical block and an optical element of the different height and the different width to each other by optimizing structures of an input portion and an output portion of the optical connecting element. CONSTITUTION: A method for fabricating an optical connecting element includes a lower cladding forming process, a core layer forming process, a patterning process, and an annealing process. The lower cladding forming process is to form a lower cladding layer on a substrate. The core layer forming process is to form a core layer on the lower cladding layer. The patterning process is to pattern the core layer. The annealing process is to anneal the patterned core layer and optimize the height and the width of the optical connecting element.

Abstract translation: 目的：提供一种用于制造光学连接元件的方法，通过优化光学连接元件的输入部分和输出部分的结构，将光学块和不同高度和不同宽度的光学元件彼此连接。 构成：用于制造光学连接元件的方法包括下包层形成工艺，芯层形成工艺，图案化工艺和退火工艺。 下包层形成工艺是在衬底上形成下包层。 芯层形成工艺是在下包层上形成芯层。 图案化过程是对芯层进行图案化。 退火过程是退火图案化的芯层并优化光学连接元件的高度和宽度。

公开(公告)号：KR1020000066216A

公开(公告)日：2000-11-15

申请号：KR1019990013153

申请日：1999-04-14

Applicant: 삼성전자주식회사

Inventor： 유경희 ,  한관수 ,  이태형

IPC: C08G73/10

CPC classification number: C08G73/1042 ,  C08G73/10 ,  C08G73/1039 ,  G02B1/046 ,  C08L79/08

Abstract: PURPOSE: A polyimide having low light absorption loss at a near infrared light wavelength range, easy to control reflected indexes, excellent in solubility to an organic solvent and processability and capable of effectively protecting the increase of light absorption loss and the lowering of adhesion property and coatability of a film is provided which is very useful as an optical material in the optical communication field using light of a near infrared light region. CONSTITUTION: A polyimide for optical communications has a monomer, represented by the formula (1), as a repeating unit. In formula, R1, R2, R3 and R4 are selected from the group consisting of H, Cl, F, I, Br, CF3, CCl3, a nonsubstituted aromatic ring and a halogenated aromatic ring, n is an integer from 1 to 39. The use of the polyimide as materials for forming a waveguide layer extends the selection width for buffer layer material.

Abstract translation: 目的：近红外光波长范围光吸收损失低的聚酰亚胺，易于控制反射指数，溶解度优异，加工性好，能有效保护光吸收损失的增加和粘合性降低， 提供了使用近红外光区域的光在光通信领域中作为光学材料非常有用的膜的涂布性。 构成：用于光通信的聚酰亚胺具有由式（1）表示的单体作为重复单元。 在式中，R 1，R 2，R 3和R 4选自H，Cl，F，I，Br，CF 3，CCl 3，非取代芳环和卤代芳环，n为1至39的整数。 使用聚酰亚胺作为形成波导层的材料延伸缓冲层材料的选择宽度。

公开(公告)号：KR1020070031719A

公开(公告)日：2007-03-20

申请号：KR1020050086462

申请日：2005-09-15

Applicant: 삼성전자주식회사

Inventor： 유경희

IPC: H01L21/027

CPC classification number: G03F1/70

Abstract: 포토 마스크의 디자인 방법을 제공한다. 이 방법은 스크라이브 레인 내에 키들의 배치 가능 여부를 스크라이브 레인의 총 길이와 배치해야할 키의 총 길이를 비교하여 판단하는 것을 특징으로 한다. 따라서 일일이 키들을 임의배치하지 않아도 배치 가능 여부를 판단할 수 있으므로 시간을 절약할 수 있다.
스크라이브 레인

公开(公告)号：KR1020060114978A

公开(公告)日：2006-11-08

申请号：KR1020050037227

申请日：2005-05-03

Applicant: 삼성전자주식회사

Inventor： 유경희

IPC: H01L21/027 ,  H01L21/02

CPC classification number: G03F1/42

Abstract: A method for manufacturing a semiconductor device is provided to increase manufacturing efficiency of the semiconductor device by facilitating alignment between a photomask and a wafer. Plural photomasks are used to sequentially perform exposure processes on a semiconductor wafer. The photomask includes alignment marks(120a-120f) and patterns for discriminating alignment marks(160a-160f). The patterns for discriminating alignment marks are formed on one surface of the aligned marks. The alignment marks and the patterns for discriminating the alignment marks are formed on a scribe line on the wafer during the sequential exposure processes. When the alignment marks are matched, the patterns for discriminating the alignment marks are formed on one side of the alignment marks.

Abstract translation: 提供一种用于制造半导体器件的方法，以通过促进光掩模和晶片之间的对准来提高半导体器件的制造效率。 多个光掩模用于在半导体晶片上依次执行曝光处理。 光掩模包括对准标记（120a-120f）和用于区分对准标记（160a-160f）的图案。 用于区分对准标记的图案形成在对准标记的一个表面上。 用于识别对准标记的对准标记和图案在顺序曝光处理期间形成在晶片上的划线上。 当对准标记匹配时，用于识别对准标记的图案形成在对准标记的一侧。

公开(公告)号：KR1020040040539A

公开(公告)日：2004-05-13

申请号：KR1020020068697

申请日：2002-11-07

Applicant: 삼성전자주식회사

Inventor： 유경희

IPC: H01L21/027

Abstract: PURPOSE: A reticle bar code structure is provided to be capable of maintaining the career of a reticle for preventing the duplicate fabrication of the same reticle. CONSTITUTION: A reticle bar code structure is provided with a mass-production line code(1) for showing a mass-production line number, a product code(2) for showing a product group, and a plurality of version codes(3,4) of a device. The reticle bar code structure further includes a plurality of layer codes(5,6) of the product group, a plurality of reticle ID(IDentification) codes(7,8), a scale sorting code(9), and a set order code(10) for showing a reticle fabrication order number. Preferably, the set order code shows the fabrication number of the same reticles. Preferably, the product code, the version code, and the scale sorting code are fixed codes. Preferably, the mass-production line code, the layer code, and the reticle ID code are variable codes.

Abstract translation: 目的：提供了一种掩模版条形码结构，以能够保持掩模版的职业，以防止相同掩模版的重复制造。 规定：标线条形码结构具有用于显示批量生产线号的批量生产线代码（1），用于显示产品组的产品代码（2）和多个版本代码（3,4 ）的设备。 标线条形码结构还包括产品组的多个层代码（5,6），多个标线标识（识别）代码（7,8），标度分类代码（9）和设置的订单代码 （10）用于显示掩模版制造订单号。 优选地，设定的订单代码示出了相同标线的制造号。 优选地，产品代码，版本代码和比例分类代码是固定代码。 优选地，批量生产线代码，层代码和标线标识代码是可变代码。