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公开(公告)号：KR101030502B1
公开(公告)日：2011-04-21
申请号：KR1020090057296
申请日：2009-06-25
Applicant: 전자부품연구원
IPC: G02F1/13357
Abstract: LED 백라이트 유닛이 개시된다. 개시된 LED 백라이트 유닛은 광 출사방향으로 LED를 봉지하는 실리콘 봉지재를 포함하는 LED 패키지와, LED로부터 출사되는 광을 가이드 하는 도광판과, LED 패키지와 대향하며 LED 패키지의 크기에 대응하도록 상기 도광판 상측면에 일체로 형성되어 상기 LED 상부로 출사되는 광을 하측으로 반사시키는 반사체와, 도광판 하면에 일체로 형성되어 반사체로부터 반사되는 광을 산란시켜 수평방향으로 확산시키는 확산체 및 실리콘 봉지재 상면과 도광판 하면에 위치하여 상기 LED로부터 출사되는 광의 출사각을 감소시키는 광학계면물질을 포함한다.
백라이트 유닛(BLU), 직하형-
公开(公告)号：KR1020110035540A
公开(公告)日：2011-04-06
申请号：KR1020090093308
申请日：2009-09-30
Applicant: 전자부품연구원
IPC: H01L33/50
Abstract: PURPOSE: An LED chip, an LED chip package, and an LED module for fishing squids are provided to have a blue LED and a fluorescent material layer optimized for collecting squids, thereby inexpensively maximizing squid collecting efficiency. CONSTITUTION: An LED chip comprises a blue LED(110) and a fluorescent material layer(120). The blue LED has an emitting wavelength which is in 405 to 470 nm. The blue LED comprises a first conductive semiconductor layer(111), a second conductive semiconductor layer(112), and an active layer(113). The fluorescent material layer is located on the light emitting surface of the blue LED. The fluorescent material layer comprises a fluorescent object(121) which converts the wavelength of light emitted from the blue LED into 480 to 500 nm.
Abstract translation: 目的：提供LED芯片，LED芯片封装和用于鱿鱼的LED模块，以具有蓝色LED和为收集鱿鱼而优化的荧光材料层，从而廉价地最大化鱿鱼收集效率。 构成：LED芯片包括蓝色LED（110）和荧光材料层（120）。 蓝色LED的发光波长为405〜470nm。 蓝色LED包括第一导电半导体层（111），第二导电半导体层（112）和有源层（113）。 荧光体层位于蓝色LED的发光面上。 荧光材料层包括将从蓝色LED发射的光的波长转换为480nm至500nm的荧光物体（121）。
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公开(公告)号：KR1020100128892A
公开(公告)日：2010-12-08
申请号：KR1020090047557
申请日：2009-05-29
Applicant: 전자부품연구원
IPC: H01L29/786
CPC classification number: H01L29/78696 , H01L29/41733 , H01L29/7869 , H01L51/0558 , H01L51/105
Abstract: PURPOSE: A manufacturing method of thin film transistor and a thin film transistor manufactured by the same are provided to be applied to an OLED(Organic Light Emitting Diode) requiring great amount of current by offering a short channel thin film transistor having a channel width of less than 1μm while using general exposing device. CONSTITUTION: A gate electrode(120), a gate insulating layer(130), and a source electrode(140) are successively formed on a substrate(110). A photoresist layer for forming the channel region on the source electrode is formed. The source electrode is etched on the gate insulating layer in order to form the drain electrode.
Abstract translation: 目的：提供一种薄膜晶体管及其制造的薄膜晶体管的制造方法，其应用于需要大量电流的OLED（有机发光二极管），其通过提供具有沟道宽度的短沟道薄膜晶体管 使用一般曝光装置时小于1μm。 构成：在基板（110）上依次形成栅电极（120），栅极绝缘层（130）和源电极（140）。 形成用于在源电极上形成沟道区的光致抗蚀剂层。 在栅极绝缘层上蚀刻源电极以形成漏电极。
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公开(公告)号：KR1020100115216A
公开(公告)日：2010-10-27
申请号：KR1020090033841
申请日：2009-04-17
Applicant: 전자부품연구원
IPC: G02F1/167 , G02F1/13357
CPC classification number: G02F1/133615 , G02F1/167 , G02F2001/133601 , G02F2203/02 , G09G3/3426 , G09G2310/024
Abstract: PURPOSE: An ultra thin edge type backlight unit capable of inexpensively using a light source and a display device including the same are provided to implement the ultra thin edge type backlight unit by using a reflective display panel as a reflective backlight unit. CONSTITUTION: A light source(120) is located in the side of a light guide plate(110). A reflective display panel(130) is located in a surface opposite to the side in which light is extracted from the light source. The resolution of the reflective display panel is greater than 2×2. A toner mode electronic paper comprises white toner particles and black toner particles.
Abstract translation: 目的：提供能够廉价地使用光源的超薄边缘型背光单元和包括该光源的显示装置，以通过使用反射显示面板作为反射背光单元来实现超薄边缘型背光单元。 构成：光源（120）位于导光板（110）的侧面。 反射显示面板（130）位于与从光源提取光的一侧相反的表面。 反射显示面板的分辨率大于2×2。 调色剂模式电子纸包括白色调色剂颗粒和黑色调色剂颗粒。
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公开(公告)号：KR100850874B1
公开(公告)日：2008-08-07
申请号：KR1020070039554
申请日：2007-04-23
Applicant: 전자부품연구원
CPC classification number: B22F9/30 , B22F2301/15 , B22F2304/054 , B82Y30/00 , B82Y40/00
Abstract: A method for preparing nickel nanoparticles is provided to suppress the growth of particles through a low-temperature process, to save a cost by omitting a milling process, and to remove environmental pollution factors by using a material having relatively low toxicity and environmental pollution. A method for preparing nickel nanoparticles includes the steps of: preparing a nickel-organic material mixture-containing solution in which a nickel-organic material mixture is dissolved or dispersed in an organic solvent; removing the organic solvent from the solution to obtain nickel nanoparticles having organic impurities; and heat-treating the nickel nanoparticles at a low-temperature atmosphere of 250 °C or below to remove the organic impurities. Further, the step of removing the organic solvent is performed by agitation at room temperature.
Abstract translation: 提供一种制备镍纳米颗粒的方法，以通过低温工艺抑制颗粒的生长，通过省略研磨工艺节省成本，并且通过使用具有相对低的毒性和环境污染的材料来消除环境污染因素。 制备镍纳米颗粒的方法包括以下步骤：制备其中将镍 - 有机材料混合物溶解或分散在有机溶剂中的含有镍材料混合物的溶液; 从溶液中除去有机溶剂，得到具有有机杂质的镍纳米颗粒; 并在250℃或更低的低温气氛下对镍纳米颗粒进行热处理以除去有机杂质。 此外，除去有机溶剂的步骤通过在室温下搅拌进行。
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Patent Agency Ranking
公开(公告)号：KR1020080047923A
公开(公告)日：2008-05-30
申请号：KR1020060117953
申请日：2006-11-27
Applicant: 전자부품연구원
IPC: H01L27/146 , H01L31/10
CPC classification number: H01L27/14612 , H01L27/1229 , H01L27/1251 , H01L27/1255 , H01L27/1259 , H01L27/1274
Abstract: An optical detection sensor and a manufacturing method thereof are provided to downsize a switching transistor by forming the switching transistor using polycrystalline silicon. A storage capacitor stores charges generated from an amorphous silicon thin film transistor, and a polycrystalline silicon thin film transistor is switched to shift the charges stored in the storage capacitor. The polycrystalline silicon thin film transistor includes a polycrystalline silicon island(231) with a doped region for an ohmic contact, a first interlayer dielectric(240) enclosing the polycrystalline silicon island, a switching gate electrode(251) formed on the first interlayer dielectric, and a second interlayer dielectric(260) formed on the first interlayer dielectric. The first and second interlayer dielectrics are etched to form a pair of trenches exposing the doped region. A source electrode(331) and a drain electrode(332) are formed in the trenches.
Abstract translation: 提供光学检测传感器及其制造方法，通过使用多晶硅形成开关晶体管来缩小开关晶体管的尺寸。 存储电容器存储从非晶硅薄膜晶体管产生的电荷，并且切换多晶硅薄膜晶体管以移位存储在存储电容器中的电荷。 多晶硅薄膜晶体管包括具有用于欧姆接触的掺杂区域的多晶硅岛（231），封装多晶硅岛的第一层间电介质（240），形成在第一层间电介质上的开关栅电极（251） 和形成在第一层间电介质上的第二层间电介质（260）。 蚀刻第一和第二层间电介质以形成暴露掺杂区域的一对沟槽。 源极电极（331）和漏电极（332）形成在沟槽中。
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公开(公告)号：KR100822270B1
公开(公告)日：2008-04-16
申请号：KR1020060130796
申请日：2006-12-20
Applicant: 전자부품연구원
IPC: H01L29/786
CPC classification number: H01L29/41733 , H01L29/458 , H01L29/78678
Abstract: A thin film transistor and a manufacturing method thereof are provided to improve an electrical characteristic by reducing contact resistance between a semiconductor layer and a second source electrode. A gate electrode(110) is formed on a substrate(100), and a gate insulating layer(120) is formed on the substrate to enclose the gate electrode. A first source electrode(131) and a first drain electrode(141) are formed on the gate insulating layer. A second source electrode(135) is formed on the first source electrode, and has a first extension(137) floated from the gate insulating layer. A second drain electrode(145) is formed on the first drain electrode, and has a second extension(147) floated from the gate insulating layer. A semiconductor layer(150) is formed on the gate insulating layer in the region where the first and second source electrodes are spaced apart from the first and second drain electrodes.
Abstract translation: 提供一种薄膜晶体管及其制造方法，以通过降低半导体层和第二源电极之间的接触电阻来改善电特性。 在基板（100）上形成栅电极（110），在基板上形成栅极绝缘层（120）以包围栅电极。 第一源电极（131）和第一漏电极（141）形成在栅极绝缘层上。 第二源电极（135）形成在第一源极上，并且具有从栅极绝缘层浮起的第一延伸部（137）。 在第一漏电极上形成第二漏电极（145），并且具有从栅极绝缘层浮起的第二延伸部（147）。 在第一和第二源极与第一和第二漏极间隔开的区域中，在栅极绝缘层上形成半导体层（150）。
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公开(公告)号：KR1020060075644A
公开(公告)日：2006-07-04
申请号：KR1020040114464
申请日：2004-12-28
Applicant: 전자부품연구원
IPC: H01L29/786
CPC classification number: H01L29/78603 , H01L21/02675 , H01L21/2007 , H01L21/2026 , H01L21/2033 , H01L27/1266
Abstract: 본 발명은 다결정 실리콘 박막 트랜지스터의 제조 방법에 관한 것으로, 스퍼터링으로 비정질 실리콘 박막을 형성하기 때문에, 그 비정질 실리콘 박막에는 수소의 함량이 거의 없어, 탈수소화 공정을 생략하여 고분자 기판의 변형 및 비정질 실리콘 박막에서 크랙의 발생을 방지할 수 있어 소자의 특성이 우수해지는 효과가 있다.
다결정, 실리콘, 수소, 스퍼터링, 변형-
公开(公告)号：KR100497576B1
公开(公告)日：2005-07-01
申请号：KR1020020056996
申请日：2002-09-18
Applicant: 전자부품연구원
Abstract: 본 발명은 가스 감지물질이 포함된 나노 분말 및 그의 제조방법에 관한 것으로, 콜로이드(Colloid) 상태의 모물질 약품과 촉매 약품을 유기 용매에 용해하여 감지물질 유기 용액을 형성하고; 상기 감지물질 유기 용액을 교반하여 겔화된 감지물질 화합물을 형성하고; 상기 겔화된 감지물질 화합물을 분쇄한 후, 50 ~ 300℃ 온도 분위기에서 열처리하여 분말상태로 만들고; 상기 분말을 균일하게 분산시켜 가스 감지물질이 포함된 나노 분말을 형성한다.
따라서, 본 발명은 나노분말 제조와 촉매도핑 공정을 결합하는 공정을 수행하여 촉매분포의 균일성을 향상시킬 수 있고, 제조 공정을 단축시킬 수 있으므로, 제조 단가를 낮출 수 있으며, 열처리를 300℃ 이하의 저온에서 수행하여, 입자 성장 억제로 인한 비표면적의 감소를 억제시킬 수 있는 효과가 발생한다.
또한, 염소를 배제하여 제조함으로써, 온도 낮추어 제조할 수 있고, 공정 안정성을 향상시킬 수 있으며, 환경 오염 요인을 제거할 수 있다.-
公开(公告)号：KR1020040044755A
公开(公告)日：2004-05-31
申请号：KR1020020072926
申请日：2002-11-22
Applicant: 전자부품연구원
IPC: G02F1/1333
CPC classification number: G02F1/133345 , G02F1/1333 , G02F2202/02 , G02F2202/09
Abstract: PURPOSE: A double structure insulation film mixed organic and inorganic is provided to reduce a surface distortion of a substrate by stacking an organic insulation layer on the substrate. CONSTITUTION: A gas barrier layer(2) is formed on a polymer substrate(1). A gate electrode(3) is formed on the gas barrier layer(2). An organic insulation layer(4) is formed on the gate electrode(3). An inorganic insulation layer(5) is formed on the organic insulation layer(4). A source-drain electrode(6) and a semiconductor layer(7) used as a thin film transistor are formed on the inorganic insulation layer(5). The organic insulation layer(4) is made of anyone material of polycarbonate, polyimide and acryl which have below 2.5GPa of Young's module and superior mechanical and electrical characteristics. The inorganic insulation layer(5) is made of SiO2 having 80-100GPa of Young's module and its thickness is within 200nm.
Abstract translation: 目的：提供混合有机和无机的双重结构绝缘膜，以通过在基板上层叠有机绝缘层来减小基板的表面变形。 构成：在聚合物基材（1）上形成阻气层（2）。 在阻气层（2）上形成栅电极（3）。 在栅电极（3）上形成有机绝缘层（4）。 在有机绝缘层（4）上形成无机绝缘层（5）。 在无机绝缘层（5）上形成用作薄膜晶体管的源 - 漏电极（6）和半导体层（7）。 有机绝缘层（4）由聚碳酸酯，聚酰亚胺和丙烯酸树脂的任何材料制成，其杨氏模量小于2.5GPa，具有优异的机械和电气特性。 无机绝缘层（5）由具有80-100GPa的杨氏模块的SiO 2制成，其厚度在200nm以内。
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