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公开(公告)号：KR1020160094138A
公开(公告)日：2016-08-09
申请号：KR1020150015353
申请日：2015-01-30
Applicant: 한국과학기술연구원
CPC classification number: B24D18/00 , C01B31/36 , C01B32/956 , B23B27/14 , B23B2228/10 , B23C5/16 , C23C14/0635 , C23C14/35
Abstract: 고온내산화성이우수한초경도탄화붕소박막은, 탄화붕소층과탄화규소층이교대로반복적으로적층된구조를갖는다. 이에따라, 탄화붕소박막의고온내산화성이향상되어절삭공구등 내마모공구의코팅재료로사용가능하다.
Abstract translation: 耐高温氧化碳化硼薄膜具有碳化硼层和碳化硅层交替层叠的结构。 因此，提高了碳化硼薄膜的耐高温氧化性能，可用于诸如切削工具等的耐磨工具的涂层材料。
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公开(公告)号：KR1020140072300A
公开(公告)日：2014-06-13
申请号：KR1020120137651
申请日：2012-11-30
Applicant: 한국과학기술연구원
CPC classification number: C30B29/04 , C01B32/25 , C01P2004/64 , C23C16/27
Abstract: A manufacturing method of diamond powder of the present invention comprises a step of forming a seed particle including diamond on a substrate; a step of injecting source gas in a reaction chamber having the substrate and a filament positioned therein; a step of heating the substrate; a step of activating the source gas by heating the filament; a step of separating the seed particle from the substrate by using the heated filament; and a step of growing diamond on the seed particle separated from the substrate by using the activated source gas. According to the manufacturing method of the present invention, diamond powder can be manufactured in a gas-to-particle synthesis method.
Abstract translation: 本发明的金刚石粉末的制造方法包括在基材上形成包含金刚石的种子粒子的工序; 将源气体注入到具有基板和位于其中的细丝的反应室中的步骤; 加热基板的步骤; 通过加热灯丝来激活源气体的步骤; 通过使用加热的丝分离种子颗粒与基底的步骤; 以及通过使用活化的源气体在从基底分离的种子颗粒上生长金刚石的步骤。 根据本发明的制造方法，可以以气体 - 粒子的合成方法制造金刚石粉末。
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公开(公告)号：KR101388432B1
公开(公告)日：2014-04-25
申请号：KR1020130049174
申请日：2013-05-02
Applicant: 한국과학기술연구원
IPC: H01L31/04 , H01L31/0224 , H01L31/18
CPC classification number: H01L31/022483 , H01L31/022466
Abstract: The present invention relates to a Se or S based thin film solar cell capable of improving the crystallinity and the electrical property of an upper transparent electrode layer by controlling the structure of a lower transparent layer in a Se or S based light absorption based thin film solar cell, and a method for fabricating the same. In a Se or S based thin film solar cell according to the present invention which is a Se or S based thin film solar cell having a light absorption layer and a front transparent electrode layer, the front transparent electrode layer comprises a lower transparent electrode layer and an upper transparent electrode layer. The lower transparent electrode layer comprises an oxide based thin film (impurity-doped Zn-Mg based oxide thin film) where the mixed oxide of Zn oxide and Mg oxide is mixed with an impurity element.
Abstract translation: 本发明涉及一种能够通过控制在基于Se或S的光吸收型薄膜太阳能电池中的下部透明层的结构来改善上层透明电极层的结晶性和电性能的Se或S系薄膜太阳能电池 电池及其制造方法。 在根据本发明的Se或S基薄膜太阳能电池中，其是具有光吸收层和前透明电极层的Se或S基薄膜太阳能电池，前透明电极层包括下透明电极层和 上部透明电极层。 下部透明电极层包含将氧化锌和氧化镁的混合氧化物与杂质元素混合的氧化物系薄膜（杂质掺杂的Zn-Mg系氧化物薄膜）。
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公开(公告)号：KR101369285B1
公开(公告)日：2014-03-06
申请号：KR1020120038556
申请日：2012-04-13
Applicant: 한국과학기술연구원
CPC classification number: C23C16/32 , C23C16/4488
Abstract: 본 발명은 텅스텐 카바이드의 성장시 과포화(supersaturation) 수준의 조절을 통해 나노구조의 정렬 형태를 제어함으로써 여러 형태의 텅스텐 카바이드 특히, 나노월 구조의 텅스텐 카바이드를 합성할 수 있는 2차원 나노구조의 텅스텐 카바이드 및 그 제조방법에 관한 것으로서, 본 발명에 따른 2차원 나노구조의 텅스텐 카바이드 제조방법은 수소 플라즈마가 인가되는 화학기상증착 공정을 이용하여, 나노결정다이아몬드 박막 상에 수직 배열되는 2차원 나노구조의 텅스텐 카바이드를 제조하는 것을 특징으로 하며, 상기 수소 플라즈마가 인가되는 화학기상증착 공정은, 챔버 내의 양극 상에 나노결정다이아몬드 박막이 형성된 기판을 구비시키고, 기판의 상부 이격된 위치에 표면이 탄화된 텅스텐 음극을 구비시킨 상태에서, 챔버 내에 수소 플라즈마가 인가된다.
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公开(公告)号：KR101349633B1
公开(公告)日：2014-02-25
申请号：KR1020120137650
申请日：2012-11-30
Applicant: 한국과학기술연구원
CPC classification number: B82B3/0009 , B82B1/00 , C01B32/182 , C01B32/25 , C01B2204/04
Abstract: A polyphase carbon nanostructure may include graphene sheaths including at least one graphene layer; and diamond nanoflakes embedded in the graphene sheaths. The graphene sheaths may comprise multilayer graphene. Each graphene layer in the graphene sheaths may be aligned in parallel with the surface of the diamond nanoflake (111). The polyphase carbon nanostructure may further comprise a nanocrystalline diamond film positioned to surround the graphene sheaths. The polyphase carbon nanostructure has a high electric conductivity compared to a conventional nanocrystalline diamond film, which does not include graphite. [Reference numerals] (AA) Intensity (a.u.); (BB) 302.1 eV(sp^3) : second band gap; (CC) Energy loss (eV)
Abstract translation: 多相碳纳米结构可以包括至少一个石墨烯层的石墨烯鞘; 和镶嵌在石墨烯护套中的金刚石纳米片。 石墨烯护套可以包括多层石墨烯。 石墨烯护套中的每个石墨烯层可以与金刚石纳米片（111）的表面平行排列。 多相碳纳米结构还可以包括定位成围绕石墨烯护套的纳米晶体金刚石膜。 与不含石墨的常规纳米晶体金刚石膜相比，多相碳纳米结构具有高导电性。 （AA）强度（a.u.）; （BB）302.1eV（sp ^ 3）：第二带隙; （CC）能量损失（eV）
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Patent Agency Ranking
公开(公告)号：KR101331566B1
公开(公告)日：2013-11-21
申请号：KR1020120031830
申请日：2012-03-28
Applicant: 한국과학기술연구원
CPC classification number: C23C16/27 , C23C16/02 , C23C16/0254 , C23C16/271 , C23C16/272
Abstract: 본 발명은 실리콘 산화막이 코팅된 기판 상에 나노결정다이아몬드 박막을 형성함에 있어서 기판 표면에 대해 수소 플라즈마 처리 또는 탄화수소 플라즈마 처리를 하거나 탄화수소 열처리를 수행함으로써, 후속의 초음파 파종 공정시 기판 표면과 나노다이아몬드 입자 간의 정전기 인력을 최대화하여 초음파 파종 공정시 기판의 실리콘 산화막 상에 나노다이아몬드 입자가 균일하게 분포, 결합되도록 하고, 궁극적으로 보이드(void)가 최소화된 균질의 나노결정다이아몬드 박막을 제조할 수 있는 나노결정다이아몬드 박막 및 그 제조방법에 관한 것으로서, 본 발명에 따른 나노결정다이아몬드 박막의 제조방법은 실리콘 산화막이 코팅된 실리콘 기판을 준비하는 단계와, 상기 기판을 표면처리하는 단계와, 나노다이아몬드 입자가 분산된 용액에 상기 기판 을 넣은 후, 초음파를 조사하여 상기 기판 상에 나노다이아몬드 입자를 분산, 결합시키는 단계 및 상기 나노다이아몬드 입자가 결합된 기판 상에 나노결정다이아몬드 박막을 성장시키는 단계를 포함하여 이루어지며, 상기 표면처리에 의해, 기판과 나노다이아몬드 입자 간의 전위차의 절대값이 표면처리되지 않은 경우의 기판과 나노다이아몬드 입자 간의 전위차의 절대값보다 증가하는 것을 특징으로 한다.
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公开(公告)号：KR1020130115847A
公开(公告)日：2013-10-22
申请号：KR1020120038556
申请日：2012-04-13
Applicant: 한국과학기술연구원
CPC classification number: C23C16/32 , C23C16/4488
Abstract: PURPOSE: A two-dimensional nanostructured tungsten carbide and a manufacturing method thereof are provided to manufacture the tungsten carbides vertically arranged on a nanocrystalline diamond film using a chemical vapor deposition process to which hydrogen plasma is applied. CONSTITUTION: A manufacturing method of a two-dimensional nanostructured tungsten carbide includes a step of vertically arranging the tungsten carbides on a nanocrystalline diamond film using a chemical vapor deposition process to which hydrogen plasma is applied. In the chemical vapor deposition process, the hydrogen plasma is applied to inside a chamber while a substrate having the film is placed on an anode inside the chamber and a tungsten cathode of which the surface is carbonized is placed above the substrate.
Abstract translation: 目的：提供二维纳米结构碳化钨及其制造方法，以使用使用氢等离子体的化学气相沉积工艺来制造垂直设置在纳米晶体金刚石膜上的碳化钨。 构成：二维纳米结构碳化钨的制造方法包括使用施加氢等离子体的化学气相沉积工艺将钨碳化物垂直排列在纳米晶体金刚石膜上的步骤。 在化学气相沉积工艺中，将氢等离子体施加到室内，同时将具有膜的基板放置在室内的阳极上，并且将表面碳化的钨阴极放置在基板上方。
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公开(公告)号：KR1020130068820A
公开(公告)日：2013-06-26
申请号：KR1020110136213
申请日：2011-12-16
Applicant: 한국과학기술연구원
IPC: H01L21/304
Abstract: PURPOSE: A CMP(Chemical Mechanical Polishing) pad conditioner and a manufacturing method thereof are provided to basically prevent a substrate from being bent and diamond of the conditioner from being separated by forming the CMP pad conditioner using a selective deposition method. CONSTITUTION: A diamond thin film(12) is formed on a substrate(11). A mask(30) having an opening part(35) in a matrix type is placed on the diamond thin film. The mask is made of one selected from molybdenum, tungsten and graphite. A protrusion part(15) comprising diamond(40) is formed on the diamond thin film. The mask is removed.
Abstract translation: 目的：提供CMP（化学机械抛光）垫调节剂及其制造方法，以通过使用选择性沉积方法形成CMP垫调节器来基本上防止基材弯曲并使调理剂的金刚石分离。 构成：在基板（11）上形成金刚石薄膜（12）。 将具有矩阵型开口部（35）的面罩（30）放置在金刚石薄膜上。 掩模由选自钼，钨和石墨的掩模制成。 在金刚石薄膜上形成包括金刚石（40）的突出部分（15）。 去除面具。
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公开(公告)号：KR101131008B1
公开(公告)日：2012-03-28
申请号：KR1020100127450
申请日：2010-12-14
Applicant: 한국과학기술연구원
IPC: H01L31/0445 , H01L31/18
CPC classification number: Y02E10/50 , H01L31/0445 , H01L31/18
Abstract: PURPOSE: A Se or S system thin film solar cell and a manufacturing method thereof are provided to improve photoelectric transformation efficiency of a solar battery by controlling preferred orientation of a light absorption layer through the bulk porosity adjustment of a preferred orientation control layer. CONSTITUTION: A back contact electrode(120) is formed on a substrate(110). The back contact electrode is composed of a double layer of a first back contact electrode(121) and a second back contact electrode(122). A preferred orientation control layer(130) is formed on the back contact electrode. A light absorption layer(140) is formed on the preferred orientation control layer. A window layer(150) is formed on the light absorption layer. A transparent electrode layer(160) is formed on the window layer.
Abstract translation: 目的：提供一种Se或S系薄膜太阳能电池及其制造方法，以通过通过优选的取向控制层的体积孔隙率调节来控制光吸收层的优选取向来提高太阳能电池的光电转换效率。 构成：背面接触电极（120）形成在基板（110）上。 背接触电极由第一背接触电极（121）和第二后接触电极（122）的双层构成。 在背面接触电极上形成优选的取向控制层（130）。 在优选的取向控制层上形成光吸收层（140）。 在光吸收层上形成窗口层（150）。 在窗口层上形成透明电极层（160）。
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公开(公告)号：KR101035979B1
公开(公告)日：2011-05-23
申请号：KR1020110005403
申请日：2011-01-19
Applicant: 한국과학기술연구원
Abstract: PURPOSE: A method for growing a ZnO thin film, a thin film solar cell using the same, and a method for manufacturing the thin film solar cell are provided to prevent a void and a crack in a silicon thin film deposition process by making the surface of the ZnO thin film with a U-shape. CONSTITUTION: Textures in a (0002) direction and a (1120) direction are simultaneously grown by controlling a deposition temperature, a deposition pressure, or the injection ratio of precursors. The deposition temperature is controlled between 90 and 150 degrees centigrade. The deposition pressure is controlled between 0.1 and 10 torr. The precursor is made of oxygen materials and zinc materials.
Abstract translation: 目的：提供一种生长ZnO薄膜的方法，使用该薄膜太阳能电池的薄膜太阳能电池以及薄膜太阳能电池的制造方法，以防止硅薄膜沉积工艺中的空隙和裂纹， 的ZnO薄膜具有U形。 构成：通过控制沉积温度，沉积压力或前体的注射比同时生长（0002）方向和（1120）方向上的纹理。 沉积温度控制在90至150摄氏度之间。 沉积压力控制在0.1和10托之间。 前体由氧材料和锌材料制成。
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