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公开(公告)号：KR1020180016786A
公开(公告)日：2018-02-20
申请号：KR1020160100552
申请日：2016-08-08
Applicant: 한국과학기술연구원
CPC classification number: C25B11/0415 , B82Y30/00 , B82Y40/00 , C23C16/32 , C23C16/503 , C23C16/56 , C25B11/02 , C25B11/0447 , Y02E60/366 , C01G41/00 , C01P2004/24 , C23C16/50 , C23C16/505 , C23C16/52 , C25B1/04
Abstract: 텅스텐카바이드나노플레이크(nanoflake)를이용한수소생산용전극의제조방법은, 수소플라즈마가인가되는화학기상증착공정을이용하여, 나노결정다이아몬드박막상에텅스텐카바이드나노플레이크를제조하는단계; 및상기텅스텐카바이드나노플레이크의표면으로부터산화물층또는그래핀층을제거함으로써상기텅스텐카바이드나노플레이크의수소발생반응에대한활성을증가시키는단계를포함한다. 텅스텐카바이드형성후 사이클릭세정(cyclic cleaning)을통하여텅스텐카바이드표면의산화물층및/또는그래핀층을제거함으로써, 텅스텐카바이드의수소발생반응(Hydrogen Evolution Reaction) 활성을증가시켜촉매전극으로서의활용도를높일수 있다.
Abstract translation: 使用（纳米片）制造电极用于氢气生产的碳化钨纳米片方法包括：使用在其中应用氢等离子体的化学气相沉积工艺，制造纳米晶体金刚石薄膜的碳化钨纳米片箔片的步骤; 和一个步骤，以通过从所述被钉扎层或是碳化钨纳米片的表面除去氧化物层增加所述碳化钨纳米片的氢生成反应的活性。 通过去除该氧化物层和/或是在表面碳化钨钉扎层之间的通过点击洗涤（环状清洗）碳化钨形成后，通过增大氢产生反应（析氢反应）的活性碳化钨可以增强利用作为催化剂的电极 。
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公开(公告)号：KR1020150048304A
公开(公告)日：2015-05-07
申请号：KR1020130127882
申请日：2013-10-25
Applicant: 한국과학기술연구원
IPC: H01L31/04 , H01L31/0216 , H01L31/18
CPC classification number: Y02E10/50 , Y02P70/521 , H01L31/0725 , H01G9/20 , H01L31/0322 , H01L31/0749
Abstract: 태양전지는기판, 후면전극, 제1 광흡수층이차례로적층된제1 태양전지셀; 및제1 태양전지셀 상에아연주석산화물을포함하는적어도하나의제1 전극층과투명전극물질을포함하는적어도하나의제2 전극층이적층된다층구조의투명전극을포함한다. 이에따라, 내수분성및 내화학성이우수하고동시에전기전도성이향상된태양전지를제공할수 있다.
Abstract translation: 太阳能电池包括：第一太阳能电池，其中基板，背面电极，第一光吸收层被连续堆叠; 以及具有多层结构的透明电极，其中层叠有在第一太阳能电池上包括锌薄氧化物的至少一个第一电极层和包括透明电极材料的至少一个第二电极。 因此，可以提供具有优异的耐湿性和耐化学性能以及改善的导电性的太阳能电池。
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公开(公告)号：KR101313753B1
公开(公告)日：2013-10-14
申请号：KR1020120049140
申请日：2012-05-09
Applicant: 한국과학기술연구원
CPC classification number: C23C16/26 , B82Y30/00 , B82Y40/00 , C01B32/18 , Y10S977/842 , Y10T428/25
Abstract: PURPOSE: A method for growing carbon nanoflakes and a carbon nanoflake structure formed by the same are provided to enable a user to easily grow nanoflakes without an additional catalyst or plasma. CONSTITUTION: A method for growing carbon nanoflake comprises the steps of: preparing a silicone substrate equipped with carbon nanotubes; growing carbon nanoflakes on carbon nanotubes in a chemical vapor-deposition process using the mixing gas of methane, hydrogen and argon as a precursor. In the chemical vapor-deposition process, argon is excessive in the mixing gas of methane, hydrogen and argon. Graphene layers constituting carbon nanotubes are partially etched in an argon-excessive atmosphere. Graphene layers of carbon nanoflakes grow at the position of etching. [Reference numerals] (CNT,CNF) Graphene layer
Abstract translation: 目的：提供用于生长碳纳米片和由其形成的碳纳米沉淀结构的方法，以使使用者能够容易地在没有另外的催化剂或等离子体的情况下生长纳米片。 构成：生长碳纳米片的方法包括以下步骤：制备配备有碳纳米管的硅树脂基材; 在使用甲烷，氢气和氩气的混合气体作为前体的化学气相沉积方法中在碳纳米管上生长碳纳米片。 在化学气相沉积过程中，在甲烷，氢气和氩气的混合气体中氩气过多。 构成碳纳米管的石墨烯层在氩气过量的气氛中被部分蚀刻。 碳纳米片的石墨烯层在蚀刻位置生长。 （参考标号）（CNT，CNF）石墨烯层
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公开(公告)号：KR1020130109795A
公开(公告)日：2013-10-08
申请号：KR1020120031830
申请日：2012-03-28
Applicant: 한국과학기술연구원
CPC classification number: C23C16/27 , C23C16/02 , C23C16/0254 , C23C16/271 , C23C16/272 , B82B3/00 , C01B32/25
Abstract: PURPOSE: A method for manufacturing a nano-crystalline diamond thin film is provided to maximize the electrostatic attraction between the substrate surface and the nano-diamond particles, thereby uniformly distributing and coupling the nano-diamond particles on the silicon oxide film of the substrate. CONSTITUTION: A method for manufacturing a nano-crystalline diamond thin film comprises the following steps. A silicone substrate surface coated with a silicon oxide film (SiO2) is processed with the hydro plasma or the plasma mixed with hydrogen and hydrocarbon or the silicone substrate surface is heat-treated under the mixed gas atmosphere with the hydrogen and hydrocarbon. After the coated substrate is put in the solution in which nano-diamond particles are dispersed, the nano-diamond particles are scattered on the substrate and are coupled with the substrate surface by emitting ultrasound. In a state where the nano-diamond particles are coupled to the substrate through the ultrasound scattering step, the diamond thin film is grown by applying the process of chemical vapor deposition.
Abstract translation: 目的：提供一种用于制造纳米晶体金刚石薄膜的方法，以使衬底表面和纳米金刚石颗粒之间的静电吸引力最大化，从而将纳米金刚石颗粒均匀地分布并耦合在衬底的氧化硅膜上。 构成：制造纳米晶体金刚石薄膜的方法包括以下步骤。 涂覆有氧化硅膜（SiO 2）的硅树脂基材表面用氢等离子体或等离子体与氢气和烃混合，或者在混合气体气氛下与氢气和烃进行热处理。 将涂布的基材放入其中分散有纳米金刚石颗粒的溶液中后，纳米金刚石颗粒被散射在基材上并通过发射超声波与基板表面耦合。 在通过超声波散射步骤将纳米金刚石颗粒与基底结合的状态下，通过施加化学气相沉积的方法生长金刚石薄膜。
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公开(公告)号：KR1020130091468A
公开(公告)日：2013-08-19
申请号：KR1020120012767
申请日：2012-02-08
Applicant: 한국과학기술연구원
IPC: H01L23/373
CPC classification number: H01L23/3732 , H01L21/0337 , H01L21/205 , H01L21/449
Abstract: PURPOSE: A diamond heat spreader and a manufacturing method thereof are provided to maximize heat conductivity by increasing a ratio of columnar particles which are horizontally arranged on a substrate. CONSTITUTION: The cross section of a diamond crystal structure has a radial columnar structure. Columnar particles are radially arranged on the radial columnar structure. Each radial columnar structure is grown around a seed point by a chemical vapor deposition process. The seed point is locally formed on the substrate. Diamond particles are separately arranged on the substrate. [Reference numerals] (AA) Radial columnar tissue; (BB) Diamond columnar particle; (CC) Grain boundary; (DD) Substrate; (EE) Seed point
Abstract translation: 目的：提供一种金刚石散热器及其制造方法，以通过增加水平布置在基板上的柱状颗粒的比例来最大限度地提高导热性。 构成：金刚石晶体结构的横截面具有径向柱状结构。 柱状颗粒径向布置在径向柱状结构上。 每个径向柱状结构通过化学气相沉积工艺在种子点附近生长。 种子点局部形成在基底上。 金刚石颗粒分别布置在基底上。 （标号）（AA）径向柱状组织; （BB）金刚石柱状颗粒; （CC）谷物边界; （DD）基材; （EE）种子点
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Patent Agency Ranking
公开(公告)号：KR101165329B1
公开(公告)日：2012-07-18
申请号：KR1020120046828
申请日：2012-05-03
Applicant: 한국과학기술연구원
CPC classification number: C23C16/342 , C23C14/024 , C23C14/06 , C23C14/0647 , C23C14/34 , C23C14/46 , C23C16/271 , Y10T428/30
Abstract: PURPOSE: A cBN(cubic Boron Nitride) film and a manufacturing method thereof are provided to restrict harmful effects on the surface of nano-crystalline diamond and the residual stress applied to cBN by adding hydrogen in reactive gas and controlling the timing of hydrogen supply during synthesis of cBN. CONSTITUTION: A method for manufacturing a cBN film is as follows. A cBN film is formed on a nano crystalline diamond film through a PVD(Physical Vapor Deposition) process. In the PVD process, reactive gas supplied at the timing of film deposition is a mixed gas of Ar and N2. H2 is added to the reactive gas at a specific time after the film deposition.
Abstract translation: 目的：提供一种cBN（立方氮化硼）膜及其制造方法，以通过在反应气体中加入氢气来限制对纳米晶金刚石表面的有害影响和施加到cBN上的残余应力，并控制氢气供应时间 合成cBN。 构成：制造cBN膜的方法如下。 通过PVD（物理气相沉积）工艺在纳米结晶金刚石膜上形成cBN膜。 在PVD工艺中，在膜沉积时提供的反应气体是Ar和N2的混合气体。 在成膜后的特定时间将H 2加入到反应气体中。
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公开(公告)号：KR1020100063312A
公开(公告)日：2010-06-11
申请号：KR1020080121776
申请日：2008-12-03
Applicant: 한국과학기술연구원
CPC classification number: C04B41/91 , C04B41/4535 , C04B41/455 , C04B41/89 , C04B2235/427
Abstract: PURPOSE: A ceramic body coated with a diamond film, and a manufacturing method thereof are provided to induce the strong mechanical bond between the ceramic body and the diamond film by forming uneven embossments. CONSTITUTION: A manufacturing method of a ceramic body coated with a diamond film comprises the following steps: forming a surface layer by spreading a mixture composition including ceramic particles and a matrix phase on the ceramic body; forming uneven embossments on the surface layer by removing the matrix phase; and adhering the diamond film on the surface layer. The surface layer contains 50~90% of ceramic particles. The surface layer is formed by a bonding reaction, a sintering reaction, or a crystallization reaction. The matrix phase is removed by a wet etching, a dry etching, or a sand blast.
Abstract translation: 目的：提供一种涂有金刚石薄膜的陶瓷体及其制造方法，通过形成不均匀的压纹来诱导陶瓷体与金刚石薄膜之间的强机械结合。 构成：涂覆有金刚石膜的陶瓷体的制造方法包括以下步骤：通过将包括陶瓷颗粒和基质相的混合物组合物铺展在陶瓷体上而形成表面层; 通过去除基体相在表面层上形成不均匀的凸起; 并将金刚石膜粘附在表面层上。 表层含有50〜90％的陶瓷颗粒。 表面层通过结合反应，烧结反应或结晶反应形成。 通过湿法蚀刻，干蚀刻或喷砂除去基质相。
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公开(公告)号：KR1020090124111A
公开(公告)日：2009-12-03
申请号：KR1020080050117
申请日：2008-05-29
Applicant: 한국과학기술연구원
Abstract: PURPOSE: A process for growing single crystal diamond is provided to minimize the temperature difference between diamonds and minimize the temperature change by the plasma contact. CONSTITUTION: The pit(23) having the intaglio pattern corresponding to the mold substrate(21) to the crystalline morphology of the diamond seed(24) is formed. In the diamond seed, the growth is included in the pit of the mold substrate. The quick freeze part(22) controls the temperature of the mold substrate. The mold whole of the substrate is relatively uniformly contacted with the plasma(20). The intaglio pattern of the pit formed in the mold the inverted pyramid or the cubic shape. The diamond seed has the octahedron shape.
Abstract translation: 目的：提供生长单晶金刚石的方法，以最小化金刚石之间的温差，并通过等离子体接触使温度变化最小化。 构成：形成具有与模具基板（21）相对应的凹版图案的钻孔（23）与金刚石晶粒（24）的结晶形态。 在金刚石种子中，生长被包括在模具基材的凹坑中。 快速冷冻部件（22）控制模具基板的温度。 基板的模具整体与等离子体（20）相对均匀地接触。 在模具中形成的凹坑的凹雕图案是倒金字塔形或立方体形。 钻石种子具有八面体形状。
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公开(公告)号：KR1020040005105A
公开(公告)日：2004-01-16
申请号：KR1020020039401
申请日：2002-07-08
Applicant: 한국과학기술연구원
IPC: C23C16/22
CPC classification number: C23C16/279 , B23B27/148 , B23B2228/04 , C23C16/271 , C23C16/274
Abstract: PURPOSE: A method for refining particle size of deposited diamond film, particularly, particle size of the edge of the cutting tool by consistently applying negative bias to the cutting tool from the outside in the diamond film deposition process is provided, and a diamond film deposited cutting tool used in the method is provided. CONSTITUTION: The method comprises the process of depositing a diamond film on a cutting tool matrix using vapor chemical deposition and applying a negative bias to the cutting tool so that a bias lower than other electrodes is impressed to the surface of the cutting tool from the outside at the same time, thereby coating on the surface of the tool a diamond film which has fine particle size on the edge compared to the central part of the tool. In a cutting tool on the surface of which diamond film is deposited using vapor chemical deposition, the diamond film deposited cutting tool is characterized in that a diamond film which has a micro particle size of 0.1 to 5 μm and has finer particle size on the edge compared to the central part of the same surface of the tool is coated on the surface of the tool by impressing a negative bias to the cutting tool so that a bias lower than other electrodes is impressed to the surface of the cutting tool from the outside at the same time as the diamond film is being deposited on the cutting tool.
Abstract translation: 目的：提供一种通过在金刚石膜沉积工艺中从外部一致地向切割工具施加负偏压来提纯沉积金刚石膜的颗粒尺寸，特别是切割工具的边缘的粒度的方法，并且沉积金刚石膜 提供了该方法中使用的切削工具。 构成：该方法包括使用蒸汽化学沉积在切割工具基体上沉积金刚石膜并向切割工具施加负偏压的过程，使得比其它电极低的偏压从外部施加到切割工具的表面 同时，与工具的中心部分相比，在工具的表面上涂覆了具有细粒度的金刚石膜。 在使用蒸气化学沉积沉积金刚石膜的表面上的切割工具中，金刚石膜沉积切割工具的特征在于，金刚石膜的微粒径为0.1至5μm，并且在边缘上具有更细的粒径 与工具的相同表面的中心部分相比，通过向切割工具施加负偏压而涂覆在工具的表面上，使得比其他电极低的偏压从外部施加到切割工具的表面 同时金刚石膜被沉积在切割工具上。
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公开(公告)号：KR1020010028433A
公开(公告)日：2001-04-06
申请号：KR1019990040684
申请日：1999-09-21
Applicant: 한국과학기술연구원
IPC: B24B9/16
Abstract: PURPOSE: A planarizing and grinding method for a synthetic diamond wafer is provided to rapidly lap the synthetic diamond wafer without a pitting phenomenon, to planarize the diamond wafer without a grooving phenomenon and to planarize many wafers at the same time with a simple process. CONSTITUTION: A diamond wafer (1) is put on a graphite supporting stand (2) and contacted with alloyed plate materials (3,4). Plates (5,6) made from alumina, tungsten or molybdenum protect the diamond wafer from the other side of alloyed plate materials. After contacting an Mn-Fe alloy and the synthetic diamond wafer, the wafer is put into a furnace and heated at 750-1200deg.C under an argon atmosphere, an argon-hydrogen mixed gas atmosphere, a hydrogen gas atmosphere or a vacuum atmosphere to react the contact portion between the alloyed plate material and the diamond wafer.
Abstract translation: 目的：提供用于合成金刚石晶片的平面化和研磨方法，以快速搭接合成金刚石晶片而没有点蚀现象，以平滑化金刚石晶片而没有切槽现象，并且通过简单的工艺同时平面化许多晶片。 构成：将金刚石晶片（1）放在石墨支撑架（2）上并与合金板材料（3,4）接触。 由氧化铝，钨或钼制成的板（5,6）将金刚石晶片从合金板材的另一侧保护。 在将Mn-Fe合金和合成金刚石晶片接触后，将晶片放入炉中，在氩气氛下，氩 - 氢混合气体气氛，氢气气氛或真空气氛中，在750-1200℃下加热， 使合金板材和金刚石晶片之间的接触部分发生反应。
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