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公开(公告)号：KR101633039B1
公开(公告)日：2016-06-23
申请号：KR1020150033110
申请日：2015-03-10
Applicant: 한국과학기술원 , 램 리서치 코퍼레이션
IPC: H01L21/768 , H01L29/16
CPC classification number: H05K3/285 , H01L21/0331 , H01L21/76834 , H01L21/76849 , H01L21/76852 , H01L23/53238 , H05K1/0306 , H05K3/107 , H05K2201/0341 , H05K2201/0761 , H05K2201/0769 , H05K2203/095 , H05K2203/1361 , H05K2203/1366
Abstract: 본발명은표면개질된그래핀캡핑층을포함한구리배선소자및 그제조방법에관한것으로, 수나노미터이하의얇은두께로도미세한구리배선의일렉트로마이그레이션현상을억제할수 있도록하는것을특징으로한다. 본발명에따르면그래핀의표면을개질하여구리원자와화학적상호작용이발생되는작용기들을형성한표면개질그래핀을캡핑층으로사용함으로써, 수나노미터이하의얇은두께의캡핑층만을사용하여도작용기와의화학적상호작용에의해구리원자의이동이어려워지고, 그로인해구리배선의일렉트로마이그레이션현상을억제할수 있는효과가있다.
Abstract translation: 本发明涉及一种铜互连器件，其包括表面改性的石墨烯覆盖层及其制造方法，其能够抑制细微的铜互连的电迁移现象，其薄度为几纳米以下。 根据本发明，铜互连器件具有抑制铜互连的电迁移现象的效果，因为即使仅具有几纳米以下的薄层的覆盖层，铜原子的迁移率也难以通过与功能基团的化学相互作用而变得困难 通过使用表面改性石墨烯，其中通过改性石墨烯的表面形成与铜原子具有化学相互作用的官能团作为覆盖层。 铜互连装置包括：铜图案层; 至少在铜图案层的一侧和下平面的一部分上形成的衬垫/阻挡层; 形成为与衬垫/阻挡层的至少一部分外侧重叠的绝缘膜; 并且所述覆盖层形成在所述铜图案层的暴露表面上。
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公开(公告)号：KR101471365B1
公开(公告)日：2014-12-10
申请号：KR1020130133918
申请日：2013-11-06
Applicant: 한국과학기술원
Abstract: 본발명은후막열전소자제작시스크린프린팅(Screen Printing) 기법을사용할 경우프린팅에필요한 p형열전물질인아연-안티몬(ZnSb) 계열의페이스트(Paste) 합성및 후공정(열처리)에대한방법이다. 본발명에는 p형열전물질인아연-안티몬(ZnSb) 계열의페이스트(Paste) 합성을위해 Zn/Sb 파우더, 바인더(Binder), 글래스파우더(Glass Powder), 용제(Solvent)가필요하다. 또한페이스트합성후 아연-안티몬(ZnSb)본래의우수한전기적/열적특성을만들어주기위해열처리과정이요구되는데, 이과정에서전기적/열적특성을방해하는바인더(Binder), 용제(Solvent)는증발되어기공이많은후막을형성하는역할을하며, 글래스파우더(Glass Powder)는기판과의접착력(Adhesion)을우수하게하는역할을할 수있다.
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公开(公告)号：KR101292591B1
公开(公告)日：2013-08-12
申请号：KR1020120039302
申请日：2012-04-16
Applicant: 한국과학기술원
Abstract: PURPOSE: A bismuth-tellurium-based paste synthesizing method and a thermoelectric material forming method using a paste are provided to improve thermoelectric characteristics by using a screen printing technique. CONSTITUTION: A thermoelectric material forming method using a paste includes the following steps: a step of synthesizing a bismuth-tellurium-based paste by mixing bismuth-tellurium powder, a solvent, a binder, and glass powder (S10); a step of printing the bismuth-tellurium-based paste on a substrate (S20); a step of drying the printed substrate in order to evaporate the solvent from the printed substrate (S30); and a step of annealing the dried substrate at a higher temperature than the temperature of the drying step in order to evaporate the binder from the dried substrate (S40). [Reference numerals] (AA) Bi-Te Powder(75wt%) + solvent(20.3wt%) + Binder(2.3wt%) + Glass Powder(2.44wt%); (BB) Dry for 10-20 minutes in an oven with 100-200°C of temperature; (CC) Proceed all the thermal treatment steps by putting bismuth-tellurium powder with specimens; (DD) First step - thermal treatment at 200°C for 5 minutes in an N_2 atmosphere; (EE) Second step - thermal treatment at 500°C for 30 minutes in the N_2 atmosphere; (FF) Third step - thermal treatment at 500°C for 15 or more minutes in the N_2 atmosphere; (S10) Paste synthesizing step; (S20) Screen printing step; (S30) Drying step; (S40) Thermal treatment step
Abstract translation: 目的：提供一种铋 - 碲基糊料合成方法和使用糊料的热电材料形成方法，以通过使用丝网印刷技术来改善热电特性。 构成：使用糊料的热电材料形成方法包括以下步骤：通过混合铋 - 碲粉末，溶剂，粘合剂和玻璃粉末来合成铋 - 碲基糊料的步骤（S10）; 在基板上印刷铋 - 碲基糊料的步骤（S20）; 干燥印刷基板以从印刷基板蒸发溶剂的步骤（S30）; 以及在比干燥步骤的温度高的温度下对干燥的基材进行退火以从干燥的基材蒸发粘合剂的步骤（S40）。 （AA）Bi-Te粉末（75wt％）+溶剂（20.3wt％）+粘合剂（2.3wt％）+玻璃粉末（2.44wt％）; （BB）在100-200℃的烘箱中干燥10-20分钟; （CC）通过将铋碲粉末放入标本中进行所有热处理步骤; （DD）第一步 - 在N_2气氛中在200℃下热处理5分钟; （EE）第二步 - 在N_2气氛中在500℃下热处理30分钟; （FF）第三步 - 在N_2气氛中在500℃下热处理15分钟以上; （S10）糊合成步骤; （S20）丝网印刷步骤; （S30）干燥步骤; （S40）热处理工序
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公开(公告)号：KR1020110093524A
公开(公告)日：2011-08-18
申请号：KR1020100013637
申请日：2010-02-12
Applicant: 에스케이하이닉스 주식회사 , 한국과학기술원
IPC: H01L21/8247 , H01L27/115
CPC classification number: H01L21/28282 , H01L29/4234 , H01L29/66833 , H01L29/792
Abstract: PURPOSE: A non-volatile memory device and a manufacturing method thereof are provided to form a charge blocking film with a high dielectric constant, thereby increasing the operation speed of the memory device. CONSTITUTION: A tunnel insulating film(21) is formed on a substrate(20). A charge trap film or a charge storage film(22) are formed on the tunnel insulating film. A charge blocking film(23) is arranged on the charge trap film or the charge storage film. The charge blocking film includes a dielectric film. A gate electrode(24) is formed on the charge blocking film.
Abstract translation: 目的：提供一种非易失性存储器件及其制造方法，以形成具有高介电常数的电荷阻挡膜，从而增加存储器件的操作速度。 构成：在衬底（20）上形成隧道绝缘膜（21）。 在隧道绝缘膜上形成电荷捕获膜或电荷存储膜（22）。 电荷阻挡膜（23）布置在电荷捕获膜或电荷存储膜上。 电荷阻挡膜包括电介质膜。 在电荷阻挡膜上形成栅电极（24）。
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公开(公告)号：KR1020100130863A
公开(公告)日：2010-12-14
申请号：KR1020090049591
申请日：2009-06-04
Applicant: 한국과학기술원
IPC: H01L21/302 , H01L21/20
CPC classification number: C01B32/184 , H01L29/1606
Abstract: PURPOSE: A method for forming a graphine layer for an electronic device is provided to uniformly form a large graphine layer with high quality by removing native oxide which is non-uniformly formed on the surface of silicon carbide. CONSTITUTION: An SiC substrate is wet-cleaned(S110). The SiC substrate is loaded on a reactor(S120). The reactor is vacuuminzed(S130). The SiC substrate is preheated(S140). SF6 gas is inputted(S150). The SiC substrate is thermally processed at a high temperature(S160). A graphine is formed on the SiC substrate(S170).
Abstract translation: 目的：提供一种形成电子器件的石墨层的方法，通过去除在碳化硅表面上不均匀形成的天然氧化物，均匀地形成高质量的大的石墨层。 构成：将SiC衬底湿式清洗（S110）。 将SiC衬底装载在反应器上（S120）。 将反应器真空化（S130）。 预热SiC基板（S140）。 输入SF6气体（S150）。 SiC衬底在高温下进行热处理（S160）。 在SiC衬底上形成石墨（S170）。
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Patent Agency Ranking
公开(公告)号：KR102217305B1
公开(公告)日：2021-02-19
申请号：KR1020190031331
申请日：2019-03-19
Applicant: 한국과학기술원
IPC: G01N27/04 , G01N27/416 , H01L21/28 , H01L21/762
Abstract: 본발명은단결정실리콘기반유연센서및 그제작방법에관한것이다. 본발명의목적은, 단결정실리콘기술을기반으로고성능및 고유연성을동시에만족시킬수 있는, 단결정실리콘기반유연센서및 그제작방법을제공함에있다. 보다구체적으로는, 본발명의목적은, 예를들어곡률반경 1mm 정도의매우가느다란침습용프로브와같은대상물에도원활하게설치되어사용가능할만큼고유연성을가지며, 물성측정신호를고성능증폭회로를통해고민감도로얻어냄에따라압력, 온도, pH 등과같은다양한물성을고성능으로측정해낼 수있는, 단결정실리콘기반유연센서및 그제작방법을제공함에있다.
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公开(公告)号：KR101989808B1
公开(公告)日：2019-09-30
申请号：KR1020170014956
申请日：2017-02-02
Applicant: 한국과학기술원
IPC: H01L21/768 , H01L21/324 , H01L29/16
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