-
公开(公告)号:EP4546049A1
公开(公告)日:2025-04-30
申请号:EP23205629.1
申请日:2023-10-24
Applicant: ASML Netherlands B.V.
Inventor: NIENHUYS, Han-Kwang
IPC: G03F7/00
Abstract: Disclosed is a metrology method for measuring a periodic structure on a substrate comprising: obtaining observation data relating to at least one observed spectrum, each said at least one observed spectrum being obtained from a measurement of the periodic structure; determining estimated target response spectral data from said observation data; simulating said measurement in terms of at least one parameter of interest and at least one measurement artifact parameter to obtain simulated target response spectral data; and fitting said simulated target response spectral data to said estimated target response spectral data by varying said at least one parameter of interest and at least one measurement artifact parameter describing an effect of one or more measurement artifacts, to determine said at least one parameter of interest.
-
公开(公告)号:EP4521101A1
公开(公告)日:2025-03-12
申请号:EP23195434.8
申请日:2023-09-05
Applicant: ASML Netherlands B.V.
Inventor: NIENHUYS, Han-Kwang , CRAMER, Hugo, Augustinus, Joseph
IPC: G01N21/956 , G03F7/00
Abstract: A method of measuring a parameter of a structure of a substrate, the method comprising directing a pump radiation beam into a target medium and thereby causing the target medium to emit radiation, the radiation having a spectrum comprising a plurality of peaks; directing a beam of the radiation onto the substrate structure; using an imaging sensor to detect radiation which is diffracted from the substrate structure; identifying peaks in the detected diffracted radiation; identifying peaks which are compound peaks comprising radiation having two different wavelengths, based upon knowledge of the spectrum and knowledge of a pitch of the substrate structure; and using the remaining peaks to measure the parameter of the substrate structure.
-
53.
公开(公告)号:EP4296779A1
公开(公告)日:2023-12-27
申请号:EP22180144.2
申请日:2022-06-21
Applicant: ASML Netherlands B.V.
Inventor: NIENHUYS, Han-Kwang
IPC: G03F7/20 , G01N23/201
Abstract: Disclosed is a method of determining an illumination-detection system alignment of an illumination-detection system describing alignment of at least one detector and/or measurement illumination of a metrology apparatus in terms of two or more illumination-detection system alignment parameters, each illumination-detection system alignment parameter relating to a respective degree of freedom for aligning the detector and/or the measurement illumination. The method comprises obtaining a diffraction pattern relating to diffraction of broadband radiation from a structure; transforming each of one or more diffraction orders of the diffraction pattern to a respective region coordinate system, each region coordinate system comprising a first axis and a second axis, each region coordinate system being such that said first axis is aligned in relation to a direction of an intensity metric of each transformed diffraction order; and determining illumination-detection system alignment parameter values for the illumination-detection system alignment parameters.
-
公开(公告)号:EP4295187A1
公开(公告)日:2023-12-27
申请号:EP22701539.3
申请日:2022-01-12
Applicant: ASML Netherlands B.V.
-
公开(公告)号:EP4137889A1
公开(公告)日:2023-02-22
申请号:EP21192381.8
申请日:2021-08-20
Applicant: ASML Netherlands B.V.
IPC: G03F7/20
Abstract: Disclosed is a method of measuring a target on a substrate using a metrology tool comprising an illumination source operable to emit an illumination beam for illuminating the target and a metrology sensor for collecting the scattered radiation having been scattered by the target. The method comprises calculating a target angle based on cell dimensions of a unit cell of said target in a first direction and a second direction orthogonal to said first direction; and order numbers of a selected pair of complementary diffraction orders in said first direction and second direction. At least one pair of measurement acquisitions is performed at a first target orientation and a second target orientation with respect to the illumination beam, wherein said target angle for at least one of said at least one pair of measurement acquisitions is an oblique angle.
-
公开(公告)号:EP3345054A1
公开(公告)日:2018-07-11
申请号:EP16745765.4
申请日:2016-08-03
Applicant: ASML Netherlands B.V.
Inventor: NIENHUYS, Han-Kwang , DE VRIES, Gosse, Charles
CPC classification number: G03F7/70191 , G02B26/023 , G03F7/70025 , G03F7/70033 , G03F7/70158 , G03F7/70525 , G03F7/7055
Abstract: An apparatus (60) for adjusting an intensity of radiation. The apparatus comprises a grating (61) for receiving a radiation beam (Ba) and for directing at least a portion of the radiation beam in a first direction in the form of a first reflected radiation beam (Ba0), and one or more first actuators operable to rotate the grating to adjust a grazing angle between the radiation beam and a surface of the grating so as to vary an intensity of the reflected radiation beam.
-
公开(公告)号:EP3345023A2
公开(公告)日:2018-07-11
申请号:EP16753864.4
申请日:2016-08-03
Applicant: ASML Netherlands B.V.
Inventor: DE VRIES, Gosse, Charles , NIENHUYS, Han-Kwang
Abstract: A beam-splitting apparatus arranged to receive an input radiation beam and split the input radiation beam into a plurality of output radiation beams. The beam-splitting apparatus comprising a plurality of reflective diffraction gratings arranged to receive a radiation beam and configured to form a diffraction pattern comprising a plurality of diffraction orders, at least some of the reflective diffraction gratings being arranged to receive a 0
th diffraction order formed at another of the reflective diffraction gratings. The reflective diffraction gratings are arranged such that the optical path of each output radiation beam includes no more than one instance of a diffraction order which is not a 0
th diffraction order.-
公开(公告)号:EP3049870A2
公开(公告)日:2016-08-03
申请号:EP14777038.2
申请日:2014-09-24
Applicant: ASML Netherlands B.V.
Inventor: BANINE, Vadim , BARTRAIJ, Petrus , VAN GORKOM, Ramon , AMENT, Lucas , DE JAGER, Pieter , DE VRIES, Gosse , DONKER, Rilpho , ENGELEN, Wouter , FRIJNS, Olav , GRIMMINCK, Leonardus , KATALENIC, Andelko , LOOPSTRA, Erik , NIENHUYS, Han-Kwang , NIKIPELOV, Andrey , RENKENS, Michael , JANSSEN, Franciscus , KRUIZINGA, Borgert
IPC: G03F7/20 , G03F1/84 , G02B27/00 , G02B5/18 , G02B27/10 , G02B27/12 , G02B27/14 , G02B27/42 , H01S3/09 , H05H7/04 , G01N21/956 , G02B27/09 , G21K1/06
CPC classification number: G21K1/067 , G01N2021/95676 , G02B5/1814 , G02B5/1823 , G02B5/1838 , G02B5/1861 , G02B27/0025 , G02B27/0938 , G02B27/10 , G02B27/1086 , G02B27/12 , G02B27/14 , G02B27/142 , G02B27/146 , G02B27/4272 , G03F1/84 , G03F7/70025 , G03F7/70208 , G03F7/70566 , G03F7/70891 , G03F7/70991 , G21K2201/065 , H01S3/0903 , H05H7/04
Abstract: A delivery system for use within a lithographic system. The beam delivery system comprises optical elements arranged to receive a radiation beam from a radiation source and to reflect portions of radiation along one or more directions to form a one or more branch radiation beams for provision to one or more tools.
-
公开(公告)号:EP3011645A2
公开(公告)日:2016-04-27
申请号:EP14732153.3
申请日:2014-06-17
Applicant: ASML Netherlands B.V.
Inventor: NIKIPELOV, Andrey , FRIJNS, Olav , DE VRIES, Gosse , LOOPSTRA, Erik , BANINE, Vadim , DE JAGER, Pieter , DONKER, Rilpho , NIENHUYS, Han-Kwang , KRUIZINGA, Borgert , ENGELEN, Wouter , LUITEN, Otger , AKKERMANS,Johannes , GRIMMINCK, Leonardus , LITVINENKO, Vladimir
IPC: H01S3/09 , G03F7/20 , H05H7/04 , G01J1/04 , G02B26/02 , G02B1/06 , G02B5/20 , G21K1/10 , H01S3/00
CPC classification number: G03F7/70033 , G01J1/0407 , G01J1/0418 , G01J1/26 , G01J1/429 , G02B1/06 , G02B5/205 , G02B26/023 , G03F7/70008 , G03F7/7055 , G03F7/70558 , G03F7/7085 , G21K1/10 , H01S3/005 , H01S3/0085 , H01S3/0903 , H05H7/04
Abstract: A method of patterning lithographic substrates that includes using a free electron laser to generate EUV radiation and delivering the EUV radiation to a lithographic apparatus which projects the EUV radiation onto lithographic substrates. The method further includes reducing fluctuations in the power of EUV radiation delivered to the lithographic substrates by using a feedback-based control loop to monitor the free electron laser and adjust operation of the free electron laser accordingly, and applying variable attenuation to EUV radiation that has been output by the free electron laser in order to further control the power of EUV radiation delivered to the lithographic apparatus.
-
-
-
-
-
-
-
-