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公开(公告)号:SG149702A1
公开(公告)日:2009-02-27
申请号:SG2007043789
申请日:2003-12-15
Applicant: ASML NETHERLANDS BV
IPC: G03F7/20 , G03F9/00 , H01L21/027
Abstract: Lithographic Apparatus, Device Manufacturing Method, and Device Manufactured Thereby. During device manufacturing a projection beam is projected onto a substrate through a mask. The substrate is aligned with the mask using an alignment structure on the substrate. Properties of the light reflected from the alignment structure are used to determine the relative position of the substrate. Preceding processing of the substrate potentially causes errors in the position determined from the reflected light measurement of properties of the reflected light are used to determine the size of a correction that is needed to correct for the errors caused by processing of the substrate. Preferably parameters of a physical model of the alignment structure are estimated from the reflected light and used to determine the correction. Preferably, the amplitudes of a plurality of different diffraction peaks are measured to determine the correction.
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公开(公告)号:SG143220A1
公开(公告)日:2008-06-27
申请号:SG2007182041
申请日:2007-11-30
Applicant: ASML NETHERLANDS BV
Abstract: PROCESS, APPARATUS AND DEVICE A lithographic apparatus includes an illumination system configured to condition a radiation beam, a support for a patterning device, a substrate table for a substrate, a projection system, and a control system. The patterning device is capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam. The projection system is configured to project the patterned radiation beam as an image onto a target portion of the substrate along a scan path. The scan path is defined by a trajectory in a scanning direction of an exposure field of the lithographic apparatus. The control system is coupled to the support, the substrate table and the projection system for controlling an action of the support, the substrate table and the projection system, respectively. The control system is configured to correct a local distortion of the image in a region along the scan path by a temporal adjustment of the image in that region.
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公开(公告)号:SG133551A1
公开(公告)日:2007-07-30
申请号:SG2006088579
申请日:2006-12-19
Applicant: ASML NETHERLANDS BV
Inventor: VERSTAPPEN LEONARDUS HENRICUS , MOS EVERHARDUS CORNELIS
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公开(公告)号:DE60124336T2
公开(公告)日:2007-06-06
申请号:DE60124336
申请日:2001-04-26
Applicant: ASML NETHERLANDS BV
Inventor: VAN DER SCHAAR MAURITS , SETIJA IRWAN DANI , MOS EVERHARDUS CORNELIS
Abstract: Alignment to buried marks is carried out by using electromagnetic radiation to induce waves in the layers covering the buried layer. The acoustic or thermal waves cause reflectivity changes and displacements in the surface whose position and/or time dependence reveals the true position of the buried alignment mark. The buried alignment mark may be revealed by mapping the thickness of covering layers in its vicinity, e.g. by measuring the time dependence of the decay of a standing wave induced in the covering layers or by measuring the delay time of echoes of a travelling wave created at interfaces between different ones of the covering layers. Alternatively, a travelling wave can be created over the whole area of the mark so that echoes off the top and bottom of the buried mark carry positive and negative images of the mark; these cause reflectivity differences and displacements when they reach the surface which can be aligned to.
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