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公开(公告)号：JP2009117870A
公开(公告)日：2009-05-28
申请号：JP2009039327
申请日：2009-02-23
Applicant: Asml Netherlands Bv , エーエスエムエル ネザーランズ ビー.ブイ.
Inventor： TOLSMA HOITE PIETER THEODOOR , NAVARRO Y KOREN RAMON , SIMONS HUBERTUS JOHANNES GERTR , EDART REMI DANIEL MARIE , LAM PUI LENG , HULSHOF BERNARDUS JOHANNES ANT , BOGERS ROLAND ADRIANUS EMANUEL
IPC: G03F7/20 , H01L21/027 , G03B27/42 , G03F9/00
CPC classification number: G03B27/42 , G03F9/7046
Abstract: PROBLEM TO BE SOLVED: To provide an arrangement configuration and a method for automatically selecting a substrate alignment mark on a substrate in lithography equipment and an overlay metering target in an overlay metering device. SOLUTION: A memory stores locations of one or a plurality of sets of substrate alignment marks or overlay metering targets available for selection and selection rules to select suitable substrate alignment marks or overlay metering targets from this at least one set. The selection rules are based on experimental or theoretical knowledge about which substrate alignment mark or overlay metering targets locations are optimal based on one or a plurality of selection criteria. COPYRIGHT: (C)2009,JPO&INPIT
Abstract translation: 要解决的问题：提供一种在覆盖计量装置中在光刻设备和覆盖计量目标物中自动选择基板上的基板对准标记的布置配置和方法。 解决方案：存储器存储可用于选择和选择规则的一组或多组衬底对准标记或覆盖测量目标的位置，以从该至少一组中选择合适的衬底对准标记或覆盖测量目标。 选择规则基于关于基于一个或多个选择标准的哪些衬底对准标记或覆盖测量目标位置是最佳的实验或理论知识。 版权所有（C）2009，JPO＆INPIT
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公开(公告)号：JP2009117872A
公开(公告)日：2009-05-28
申请号：JP2009039399
申请日：2009-02-23
Applicant: Asml Netherlands Bv , エーエスエムエル ネザーランズ ビー.ブイ.
Inventor： TOLSMA HOITE PIETER THEODOOR , NAVARRO Y KOREN RAMON , SIMONS HUBERTUS JOHANNES GERTR , EDART REMI DANIEL MARIE , LAM PUI LENG , HULSHOF BERNARDUS JOHANNES ANT , BOGERS ROLAND ADRIANUS EMANUEL
IPC: G03F7/20 , H01L21/027 , G03B27/42
CPC classification number: G03B27/42 , G03F9/7046
Abstract: PROBLEM TO BE SOLVED: To provide an arrangement configuration and a method for automatically selecting a substrate alignment mark on a substrate in lithography equipment and an overlay metering target in an overlay metering device. SOLUTION: A memory stores locations of one or a plurality of sets of substrate alignment marks or overlay metering targets available for selection and selection rules to select suitable substrate alignment marks or overlay metering targets from this at least one set. The selection rules are based on at least one of experimental and theoretical knowledge about which substrate alignment mark or overlay metering targets locations are optimal based on one or a plurality of selection criteria. COPYRIGHT: (C)2009,JPO&INPIT
Abstract translation: 要解决的问题：提供一种在覆盖计量装置中在光刻设备和覆盖计量目标物中自动选择基板上的基板对准标记的布置配置和方法。 解决方案：存储器存储可用于选择和选择规则的一组或多组衬底对准标记或覆盖测量目标的位置，以从该至少一组中选择合适的衬底对准标记或覆盖测量目标。 选择规则基于基于一个或多个选择标准的关于哪个衬底对准标记或覆盖计量目标位置是最佳的实验和理论知识中的至少一个。 版权所有（C）2009，JPO＆INPIT
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公开(公告)号：JP2008147654A
公开(公告)日：2008-06-26
申请号：JP2007310091
申请日：2007-11-30
Applicant: Asml Netherlands Bv , エーエスエムエル ネザーランズ ビー.ブイ.
IPC: H01L21/027
CPC classification number: G03F7/70725 , G03F7/70258 , G03F7/70358 , G03F7/70458 , G03F7/70525 , G03F7/70633 , G03F7/70783
Abstract: PROBLEM TO BE SOLVED: To provide an instrument and process that can reduce or correct the contribution of the strains or defects of a mask pattern to the strain of an exposure pattern.
SOLUTION: In the instrument for determining the process parameter of a process for generating an overlay pattern on a substrate, by applying a process model to a proposed process parameter and data, including a deduced overlay error between overlay patterns, the proposed overlay error corresponds to a process control, depending on the proposed value of the process parameter. Thus, the value determined for the process parameter corresponds to the minimum overlay error. The instrument determines the first value of the process parameter that generates the first portion of the overlay pattern in the first section of a target field, and a second value that is different from the first value of the process parameter for generating one of the second portion of the overlay pattern.
COPYRIGHT: (C)2008,JPO&INPITAbstract translation: 要解决的问题：提供可以减少或校正掩模图案的应变或缺陷对曝光图案的应变的贡献的仪器和工艺。 解决方案：在用于确定用于在衬底上生成覆盖图案的工艺的工艺参数的工具中，通过将工艺模型应用于所提出的工艺参数和数据，包括叠加图案之间的推导覆盖误差，所提出的覆盖 错误对应于过程控制，具体取决于过程参数的建议值。 因此，为过程参数确定的值对应于最小重叠误差。 仪器确定在目标场的第一部分中产生覆盖图案的第一部分的过程参数的第一值，以及不同于用于生成第二部分之一的过程参数的第一值的第二值 的覆盖图案。 版权所有（C）2008，JPO＆INPIT
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Patent Agency Ranking
公开(公告)号：JP2005328061A
公开(公告)日：2005-11-24
申请号：JP2005140460
申请日：2005-05-13
Applicant: Asml Netherlands Bv , エイエスエムエル ネザランドズ ベスローテン フエンノートシャップ
Inventor： TOLSMA HOITE PIETER THEODOOR , NAVARRO Y KOREN RAMON , SIMONS HUBERTUS JOHANNES GERTR , EDART REMI DANIEL MARIE , LAM PUI LENG , HULSHOF BERNARDUS JOHANNES ANT , BOGERS ROLAND ADRIANUS EMANUEL
IPC: G03F7/20 , G03B27/42 , H01L21/027
CPC classification number: G03B27/42 , G03F9/7046
Abstract: PROBLEM TO BE SOLVED: To provide an arrangement and a method that automatically select a substrate alignment mark on a substrate in lithography apparatus or overlay metering target in an overlay meter. SOLUTION: A memory stores at least one set of positions of substrate alignment marks or overlay metering targets can be used for selection, and a selection rule for selecting an appropriate substrate alignment mark or overlay metering target from the at least one set. The selection rule is based on at least one of experimental and theoretical pieces of knowledge for optimizing the position of the substrate alignment mark or the overlay metering target according to at least one selection standard. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract translation: 要解决的问题：提供一种在覆盖计量器中在光刻设备或覆盖计量目标物质中自动选择基板上的基板对准标记的布置和方法。 解决方案：存储器存储衬底对准标记或覆盖测量目标的至少一组位置可以用于选择，以及用于从至少一个组中选择适当的衬底对准标记或覆盖计量目标的选择规则。 选择规则基于至少一个用于根据至少一个选择标准来优化衬底对准标记或覆盖计量目标的位置的知识的实验和理论。 版权所有（C）2006，JPO＆NCIPI
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公开(公告)号：WO2008066375A3
公开(公告)日：2008-08-28
申请号：PCT/NL2007000298
申请日：2007-12-03
Applicant: ASML NETHERLANDS BV , MOS EVERHARDUS CORNELIS , VAN DER SCHAAR MAURITS , SIMONS HUBERTUS JOHANNES GERTR
IPC: G03F7/20
CPC classification number: G03F7/70725 , G03F7/70258 , G03F7/70358 , G03F7/70458 , G03F7/70525 , G03F7/70633 , G03F7/70783
Abstract: A lithographic apparatus includes an illumination system configured to condition a radiation beam, a support for a patterning device, a substrate table for a substrate, a projection system, and a control system. The patterning device is capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam. The projection system is configured to project the patterned radiation beam as an image onto a target portion of the substrate along a scan path. The scan path is defined by a trajectory in a scanning direction of an exposure field of the lithographic apparatus. The control system is coupled to the support, the substrate table and the projection system for controlling an action of the support, the substrate table and the projection system, respectively. The control system is configured to correct a local distortion of the image in a region along the scan path by a temporal adjustment of the image in that region, hereby reducing the intra-field overlay errors.
Abstract translation: 光刻设备包括配置成调节辐射束的照明系统，图案形成装置的支撑件，用于衬底的衬底台，投影系统和控制系统。 图案形成装置能够在其横截面中赋予辐射束图案以形成图案化的辐射束。 投影系统被配置为沿着扫描路径将图案化的辐射束作为图像投影到基板的目标部分上。 扫描路径由光刻设备的曝光场的扫描方向上的轨迹限定。 控制系统耦合到支撑件，基板台和投影系统，用于分别控制支撑件，基板台和投影系统的作用。 控制系统被配置为通过在该区域中的图像的时间调整来校正沿着扫描路径的区域中的图像的局部失真，从而减少了场内重叠误差。
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公开(公告)号：SG120949A1
公开(公告)日：2006-04-26
申请号：SG200305608
申请日：2003-09-19
Applicant: ASML NETHERLANDS BV
IPC: G01B11/00 , G01B11/02 , G01B21/00 , G02B5/18 , G03F7/00 , G03F7/20 , G03F9/00 , G03F9/02 , H01L21/027 , H01L21/3205 , H01L21/68 , H01L23/52 , H01S3/00 , G01D5/26
Abstract: An alignment system for a lithographic apparatus has a source of alignment radiation; a detection system that has a first detector channel and a second detector channel; and a position determining unit in communication with the detection system. The position determining unit is constructed to process information from said first and second detector channels in a combination to determine a position of an alignment mark on a work piece, the combination taking into account a manufacturing process of the work piece. A lithographic apparatus has the above mentioned alignment system. Methods of alignment and manufacturing devices with a lithographic apparatus use the above alignment system and lithographic apparatus, respectively.
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公开(公告)号：SG129366A1
公开(公告)日：2007-02-26
申请号：SG200604573
申请日：2006-07-06
Applicant: ASML NETHERLANDS BV
Inventor： SIMONS HUBERTUS JOHANNES GERTR , MEGENS HENRICUS JOHANNES LAMBE , MOS EVERHARDUS CORNELIS , VERSTAPPEN LEONARDUS HENRICUS , WERKMAN ROY , VERHOEVEN HENRICUS JACOBUS MAR
Abstract: The invention relates to a method of selecting a grid model for correcting a process recipe for grid deformations in a lithographic apparatus. First a set of grid models is provided. Subsequently, alignment data are obtained by performing an alignment measurement on a plurality of alignment marks on a number of substrates. For each grid model it is checked whether the alignment data is suitable to solve the grid model. If so, the grid model is added to a subset of grid models. The grid model with lowest residuals is selected. In addition to alignment data, metrology data may be obtained by performing an overlay measurement on a plurality of overlay marks on the number of substrates. For each grid model of the subset simulated metrology data may then be determined that is used to determine overlay performance indicators. The grid model is then selected using the overlay performance indicators.
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公开(公告)号：SG143220A1
公开(公告)日：2008-06-27
申请号：SG2007182041
申请日：2007-11-30
Applicant: ASML NETHERLANDS BV
Abstract: PROCESS, APPARATUS AND DEVICE A lithographic apparatus includes an illumination system configured to condition a radiation beam, a support for a patterning device, a substrate table for a substrate, a projection system, and a control system. The patterning device is capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam. The projection system is configured to project the patterned radiation beam as an image onto a target portion of the substrate along a scan path. The scan path is defined by a trajectory in a scanning direction of an exposure field of the lithographic apparatus. The control system is coupled to the support, the substrate table and the projection system for controlling an action of the support, the substrate table and the projection system, respectively. The control system is configured to correct a local distortion of the image in a region along the scan path by a temporal adjustment of the image in that region.
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