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公开(公告)号:DE102005023460A1
公开(公告)日:2006-11-30
申请号:DE102005023460
申请日:2005-05-20
Applicant: INFINEON TECHNOLOGIES AG
Inventor: SCHAMBERGER FLORIAN , SCHAFFROTH THILO
IPC: H01L23/525 , H01L23/58 , H01L29/78
Abstract: The method involves providing an MOSFET with a channel area (5) that is arranged between a source area and a drain area, spaced over a gate dielectric material (6) on a gate electrode, and produces a hot-carrier in the channel area. An insulation property of the material is reduced by introducing the hot-carrier into the material. A breakdown voltage is applied between the electrode and the channel area for penetrating the material. Independent claims are also included for the following: (1) a MOSFET-semiconductor device that is operated as anti-fuse (2) an integrated circuit e.g. memory or logic circuit, with a MOSFET-semiconductor device.
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公开(公告)号:DE102004059447A1
公开(公告)日:2006-06-14
申请号:DE102004059447
申请日:2004-12-09
Applicant: INFINEON TECHNOLOGIES AG
Inventor: SCHAMBERGER FLORIAN , KAISER ROBERT
IPC: G11C7/10 , G11C11/407
Abstract: Integrated circuit has one port (T1) for first input signal (CLK), which adopts first and second state during first signal period and another port (T2) for second input signal (bCLK). First memory circuit (10) stores first state of second input signal and second memory circuit (20) stores the first state of second input signal. Input side (SHin) of first memory circuit is linked to port of second input signal and input side of second memory circuit is linked to port of second input signal. First memory circuit is designed such that input side of first memory circuit stored the first state of second input signal in it during delivery period of first state of second input signal. Second memory circuit is designed such that input side of second memory circuit stored the input state of second input signal in it during delivery period of second state of first input signal. Current evaluation circuit (40) for the generation of evaluating signal (AS) stored state (S1) of second input signal in first memory circuit. Current evaluation circuit is designed such that output side (A40) is generated by evaluating signal and state of second input signal is stored in first memory circuit and state (B1) of second input signal is stored in second memory circuit distinctively. Current evaluation circuit is designed such that output side is generated by evaluating signal and state of second input signal is stored in first memory circuit and state of second input signal is stored in second memory circuit, which is coinciding. An independent claim is also included for method of analysis of input signal characteristic of an integrated circuit.
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公开(公告)号:DE10117614B4
公开(公告)日:2005-06-23
申请号:DE10117614
申请日:2001-04-07
Applicant: INFINEON TECHNOLOGIES AG
Inventor: KAISER ROBERT , SCHAMBERGER FLORIAN , SCHNEIDER HELMUT
IPC: G11C11/401 , G11C7/10 , G11C7/22 , G11C11/407
Abstract: A data read access and a data write access is shared between two memory banks. A first memory bank of which is operated with a clock that is shifted by half a clock pulse with respect to the operating clock of the other, second memory bank. Partial data streams are combined at the output of the two memory banks to form a data stream with double the frequency.
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公开(公告)号:DE10255425A1
公开(公告)日:2004-06-17
申请号:DE10255425
申请日:2002-11-28
Applicant: INFINEON TECHNOLOGIES AG
Inventor: LINDOLF JUERGEN , SCHAMBERGER FLORIAN
IPC: H01L23/525 , H01L21/768
Abstract: Production of an anti-fuse structure in a substrate comprises forming a conducting region (1) and a non-conducting region (2) in the substrate to form a common surface and an edge (3) of the conducting region, and depositing a dielectric layer (4) so that a part of this edge is covered. An Independent claim is also included for an anti-fuse structure produced by the above process.
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公开(公告)号:DE10115614C2
公开(公告)日:2003-12-18
申请号:DE10115614
申请日:2001-03-29
Applicant: INFINEON TECHNOLOGIES AG
Inventor: KAISER ROBERT , SCHAMBERGER FLORIAN
Abstract: A method for supplying current to a semiconductor chip, particularly to a semiconductor memory chip, in which, in a standby mode, the semiconductor chip is supplied with current from a standby current generator, and in which, in a normal operating mode, the semiconductor chip is supplied with current from a normal mode current generator. The standby current generator provides a smaller current than the normal mode current generator, and where, in a product development phase, the semiconductor chip is supplied with current from the standby current generator in a test mode. The semiconductor chip is additionally to be supplied with current from the normal mode current generator in the product development phase.
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公开(公告)号:DE59905800D1
公开(公告)日:2003-07-10
申请号:DE59905800
申请日:1999-07-01
Applicant: INFINEON TECHNOLOGIES AG
Inventor: KRASSER HANS-JUERGEN , SCHAMBERGER FLORIAN
Abstract: An arrangement for storing test results obtained with a BIST-circuit (7) (built-in self-test circuit) from a semiconductor chip (1) provided with a memory or storage device (2-5), operates by the self-storable test results being saved in the read amplifiers (6) of the storage or memory device. The test programs for the BIST-circuit (7) are specifically stored in the read amplifiers (6), and the test results are more specifically stored in the read amplifier (6) of the storage device (2-5).
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公开(公告)号:DE19901206C2
公开(公告)日:2003-02-06
申请号:DE19901206
申请日:1999-01-14
Applicant: INFINEON TECHNOLOGIES AG
Inventor: KAISER ROBERT , SCHAMBERGER FLORIAN
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公开(公告)号:DE10115293A1
公开(公告)日:2002-10-17
申请号:DE10115293
申请日:2001-03-28
Applicant: INFINEON TECHNOLOGIES AG
Inventor: KAISER ROBERT , SCHAMBERGER FLORIAN
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公开(公告)号:DE10102871A1
公开(公告)日:2002-08-14
申请号:DE10102871
申请日:2001-01-23
Applicant: INFINEON TECHNOLOGIES AG
Inventor: KAISER ROBERT , SCHAMBERGER FLORIAN , SCHNEIDER HELMUT
IPC: G11C29/48 , G01R31/3187 , G11C29/00 , H04L7/00
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公开(公告)号:DE10063686A1
公开(公告)日:2002-07-18
申请号:DE10063686
申请日:2000-12-20
Applicant: INFINEON TECHNOLOGIES AG
Inventor: SCHAMBERGER FLORIAN
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