公开(公告)号：DE69426565T2

公开(公告)日：2001-05-31

申请号：DE69426565

申请日：1994-09-21

Applicant: ST MICROELECTRONICS SRL ,  CONS RIC MICROELETTRONICA

Inventor： PALARA SERGIO ,  ZAMBRANO RAFFAELE

IPC: H01L27/04 ,  H01L27/02 ,  H01L29/78 ,  H03K17/08 ,  H03K17/687

公开(公告)号：DE69223499D1

公开(公告)日：1998-01-22

申请号：DE69223499

申请日：1992-04-02

Applicant: CONS RIC MICROELETTRONICA

Inventor： ZAMBRANO RAFFAELE

IPC: H01L29/78 ,  H01L21/331 ,  H01L27/06 ,  H01L29/73 ,  H01L29/732 ,  H01L29/735

公开(公告)号：DE69125390T2

公开(公告)日：1997-08-28

申请号：DE69125390

申请日：1991-07-03

Applicant: CONS RIC MICROELETTRONICA

Inventor： ZAMBRANO RAFFAELE

IPC: H01L27/06 ,  H01L21/331 ,  H01L27/082 ,  H01L29/73 ,  H01L29/732

公开(公告)号：DE69113987T2

公开(公告)日：1996-04-25

申请号：DE69113987

申请日：1991-04-17

Applicant: CONS RIC MICROELETTRONICA

Inventor： ZAMBRANO RAFFAELE

IPC: H01L21/76 ,  H01L21/331 ,  H01L21/74 ,  H01L21/761 ,  H01L21/8222 ,  H01L21/8228 ,  H01L27/06 ,  H01L27/082 ,  H01L29/73

公开(公告)号：DE69207410D1

公开(公告)日：1996-02-15

申请号：DE69207410

申请日：1992-09-18

Applicant: CONS RIC MICROELETTRONICA

Inventor： ZAMBRANO RAFFAELE ,  PALARA SERGIO

IPC: H01L27/06 ,  H01L29/72

公开(公告)号：IT1241050B

公开(公告)日：1993-12-29

申请号：IT660990

申请日：1990-04-20

Applicant: CONS RIC MICROELETTRONICA

Inventor： ZAMBRANO RAFFAELE

IPC: H01L21/336 ,  H01L21/74 ,  H01L21/8222 ,  H01L21/8249 ,  H01L27/06 ,  H01L29/08 ,  H01L29/78 ,  H01L

Abstract: The invention relates to a process for forming a buried drain or collector region in monolithic semiconductor devices comprising an integrated control circuit and one or more power transistors with vertical current flow integrated in the same chip. The process allows optimization of the current-carrying capacity and the series drain resistance of the power stage and operating voltage in comparison with known structures by provision of one or more regions of high dopant concentration defined after growth of a first epitaxial layer.

公开(公告)号：IT9006609A1

公开(公告)日：1991-10-21

申请号：IT660990

申请日：1990-04-20

Applicant: CONS RIC MICROELETTRONICA

Inventor： ZAMBRANO RAFFAELE

IPC: H01L20060101 ,  H01L21/336 ,  H01L21/74 ,  H01L21/8222 ,  H01L21/8249 ,  H01L27/06 ,  H01L29/08 ,  H01L29/78

公开(公告)号：DE69330603T2

公开(公告)日：2002-07-04

申请号：DE69330603

申请日：1993-09-30

Applicant: CONS RIC MICROELETTRONICA

Inventor： ZAMBRANO RAFFAELE

IPC: H01L23/52 ,  H01L21/3205 ,  H01L21/60 ,  H01L21/768 ,  H01L23/485 ,  H01L29/417 ,  H01L29/78 ,  H01L23/482

公开(公告)号：DE69427913T2

公开(公告)日：2002-04-04

申请号：DE69427913

申请日：1994-10-28

Applicant: CONS RIC MICROELETTRONICA

Inventor： ZAMBRANO RAFFAELE ,  FALLICO GIUSEPPE

IPC: H01L29/73 ,  H01L21/331 ,  H01L29/10 ,  H01L29/423 ,  H01L29/732

公开(公告)号：DE69330556D1

公开(公告)日：2001-09-13

申请号：DE69330556

申请日：1993-05-13

Applicant: CONS RIC MICROELETTRONICA

Inventor： ZAMBRANO RAFFAELE

IPC: H01L21/822 ,  H01L27/04 ,  H01L27/02

Abstract: An integrated structure protection circuit suitable for protecting a power device (M) against overvoltages comprises a plurality of serially connected junction diodes (D1-D5), each having a first electrode, represented by a highly doped region (1) of a first conductivity type, and a second electrode represented by a medium doped or low doped region (2) of a second conductivity type. A first diode (D1) of said plurality has its first electrode (1) connected to a gate layer (5) of said power device (M) and its second electrode (2) connected to the second electrode (2) of at least one second diode (D2-D5) of said plurality, and said at least one second diode has its first electrode (1) connected to a drain region of the power device (M). The doping level of the second electrode (2) of the diodes (D1-D5) of said plurality is suitable to achieve sufficiently high breakdown voltage values.