公开(公告)号：DE69033271T2

公开(公告)日：2000-02-17

申请号：DE69033271

申请日：1990-02-20

Applicant: ST MICROELECTRONICS SRL

Inventor： SANTANGELO ANTONELLO ,  MAGRO CARMELO ,  FERLA GIUSEPPE ,  LANZA PAOLO

IPC: H01L21/265 ,  H01L21/28 ,  H01L21/285 ,  H01L21/329 ,  H01L21/768 ,  H01L21/60

Abstract: The process consists of enrichment of the surface of the semiconductor on which the contact is to be formed, by ion implantation of dopant, followed by deposition of a metal film on the implanted surface and then by thermal annealing at a temperature considerably lower than 500 DEG C and for a period considerably shorter than 60 minutes.

公开(公告)号：DE69033271D1

公开(公告)日：1999-10-07

申请号：DE69033271

申请日：1990-02-20

Applicant: ST MICROELECTRONICS SRL

Inventor： SANTANGELO ANTONELLO ,  MAGRO CARMELO ,  FERLA GIUSEPPE ,  LANZA PAOLO

IPC: H01L21/265 ,  H01L21/28 ,  H01L21/285 ,  H01L21/329 ,  H01L21/768 ,  H01L21/60

Abstract: The process consists of enrichment of the surface of the semiconductor on which the contact is to be formed, by ion implantation of dopant, followed by deposition of a metal film on the implanted surface and then by thermal annealing at a temperature considerably lower than 500 DEG C and for a period considerably shorter than 60 minutes.

公开(公告)号：DE60005541T2

公开(公告)日：2004-07-01

申请号：DE60005541

申请日：2000-12-20

Applicant: ST MICROELECTRONICS SRL

Inventor： CAMALLERI CATENO MARCO ,  LORENTI SIMONA ,  CALI DENISE ,  VASQUEZ PATRIZIA ,  FERLA GIUSEPPE

IPC: H01L21/225 ,  H01L21/331 ,  H01L29/73

公开(公告)号：DE69910736T2

公开(公告)日：2004-04-01

申请号：DE69910736

申请日：1999-06-03

Applicant: ST MICROELECTRONICS SRL

Inventor： GRIMALDI ANTONIO ,  SCHILLACI ANTONINO ,  FERLA GIUSEPPE

IPC: H01L27/06 ,  H01L29/06 ,  H01L29/40 ,  H01L29/41