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公开(公告)号：EP2109583A1
公开(公告)日：2009-10-21
申请号：EP08702248.9
申请日：2008-01-10
Inventor： ASPAR, Bernard , LAGAHE BLANCHARD, Chrystelle , SOUSBIE, Nicolas
IPC: B81C1/00
CPC classification number: B81C1/00952 , B81B3/001 , B81C2201/115
Abstract: The invention relates to a process of forming a rough interface (12) in a semiconductor substrate (2), comprising: the formation, on a surface (4) of said substrate, of a zone of irregularities (8) in or on an oxide or a material (6) that may be oxidized, the formation of roughnesses in or on the semiconductor substrate (2) by thermal oxidation of or through this material or this oxide (6) and a part of the semiconductor substrate.
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52.发明公开Surface preparation for selective silicon fusion bonding 审中-公开Oberflächenvorbereitungfürselektive Silicium-Schmelzverbindung
公开(公告)号：EP1772426A2
公开(公告)日：2007-04-11
申请号：EP06121955.6
申请日：2006-10-09
Applicant: Honeywell International Inc.
Inventor： Milne, James C. , McNally, Leonard J.
IPC: B81C3/00
CPC classification number: B81B3/001 , B81C2201/115 , B81C2203/036
Abstract: An apparatus and method for a silicon-based Micro-Electro Mechanical System (MEMS) device, including a pair of silicon cover structures each having a substantially smooth and planar contact surface formed thereon; a silicon mechanism structure having a part thereof that is movably suspended relative to a relatively stationary frame portion thereof, the frame portion being formed with substantially parallel and spaced-apart smooth and planar contact surfaces; a relatively rough surface disposed between the contact surfaces of the covers and corresponding surfaces of the movable part of the mechanism structure; and wherein the contact surfaces of the cover structures form silicon fusion bond joints with the respective contact surfaces of the mechanism frame.
Abstract translation: 一种用于硅基微机电系统（MEMS）器件的装置和方法，包括一对硅覆盖结构，每个硅覆盖结构在其上形成有基本平滑和平坦的接触表面; 硅机构结构，其一部分相对于其相对固定的框架部分可移动地悬挂，所述框架部分形成有大致平行且间隔开的平滑和平坦的接触表面; 设置在所述盖的接触表面和所述机构结构的可移动部分的对应表面之间的相对粗糙的表面; 并且其中所述覆盖结构的接触表面与所述机构框架的相应的接触表面形成硅熔合接合点。
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53.发明公开
公开(公告)号：EP0875010A2
公开(公告)日：1998-11-04
申请号：EP97904813.0
申请日：1997-01-17
Inventor： BLOOM, David, M. , HUIBERS, Andrew
CPC classification number: B81B3/001 , B81C2201/115 , G02B5/1828 , G02B26/0808
Abstract: A multicolor optical image-generating device comprised of an array of grating light valves (GLVs) organized to form light-modulating pixel units for spatially modulating incident rays of light. The pixel units are comprised of three subpixel components each including a plurality of elongated, equally spaced apart reflective grating elements arranged parallel to each other with their light-reflective surfaces also parallel to each other. Each subpixel component includes means for supporting the grating elements in relation to one another, and means for moving alternate elements relative to the other elements and between a first configuration wherein the component acts to reflect incident rays of light as a plane mirror, and a second configuration wherein the component diffracts the incident rays of light as they are reflected from the grating elements. The three subpixel components of each pixel unit are designed such that when red, green and blue light sources are trained on the array, colored light diffracted by particular subpixel components operating in the second configuration will be directed through a viewing aperture, and light simply reflected from particular subpixel components operating in the first configuration will not be directed through the viewing aperture.
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公开(公告)号：JP2010517259A
公开(公告)日：2010-05-20
申请号：JP2009546012
申请日：2008-01-10
Applicant: エス. オー. アイ. テック シリコン オン インシュレーター テクノロジーズ
Inventor： ベルナール アスパル， , ニコラ スービー， , ブランシャール， クリステル ラガヘ
IPC: H01L21/02
CPC classification number: B81C1/00952 , B81B3/001 , B81C2201/115
Abstract: 本発明は、半導体基板（２）内に粗い界面（１２）を形成する方法に関する。 この方法は、上記基板の表面（４）上に、酸化物又は酸化することができる材料（６）内又は上に凹凸ゾーン（８）を形成するステップと、この材料又はこの酸化物（６）と半導体基板の一部分とを熱酸化し、又はこの材料又はこの酸化物（６）と半導体基板の一部分とを介して熱酸化し、半導体基板（２）内又は上に粗さを形成するステップと、を備える。
【選択図】 図１Ｃ-
公开(公告)号：JP2009519447A
公开(公告)日：2009-05-14
申请号：JP2008544935
申请日：2006-11-29
Inventor： ケルベラー アルント , フライ イェンス
IPC: G01P15/125 , B81C1/00
CPC classification number: B81C1/00984 , B81B3/001 , B81C2201/115 , Y10T428/24355
Abstract: 本発明は、マイクロメカニカル素子であって、基板（１）が設けられており、該基板（１）の上に第１の中間層（２）が配置されており、該第１の中間層（２）の上に第１の層（３）が配置されていて、該第１の層（３）が第１の中間層（２）にまで構造形成されており、第１の層（３）の上に第２の中間層（６）が配置されており、該第２の中間層（６）の上に第２の層（９）が配置されており、該第２の層（９）内に、少なくとも１つの可動のマイクロメカニカル構造体（１４）が構造形成されており、第２の中間層（６）が、可動のマイクロメカニカル構造体（１４）の下における犠牲領域において、除去されており、第１の中間層（２）が部分的に、第１の層（３）の下における領域において除去されている形式のものに関する。 このような形式のマイクロメカニカル素子において、本発明の構成では、可動のマイクロメカニカル構造体（１４）が下側に、少なくとも１つのストッパ面を有しており、該ストッパ面が、可動のマイクロメカニカル構造体（１４）の変位によって、第１の中間層（２）によって支持されている第１の層（３）の領域に接触可能である。 本発明はまた、このようなマイクロメカニカル素子のための製造方法にも関する。
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Patent Agency Ranking56.发明专利
公开(公告)号：JP4053598B2
公开(公告)日：2008-02-27
申请号：JP52625497
申请日：1997-01-17
Inventor： ヒューイバース，アンドリュー , ブルーム，ディヴィッド・エム
CPC classification number: B81B3/001 , B81C2201/115 , G02B5/1828 , G02B26/0808
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公开(公告)号：US10131533B1
公开(公告)日：2018-11-20
申请号：US15637154
申请日：2017-06-29
Inventor： Shang-Ying Tsai , Kuei-Sung Chang , Yueh Kang Lee
CPC classification number: B81B3/001 , B81B2203/0127 , B81B2203/0315 , B81B2203/0361 , B81B2207/012 , B81C1/00404 , B81C2201/0198 , B81C2201/115
Abstract: A MEMS device includes a first structure including at least one first bump over a surface of the first structure, a second structure including a first side facing the surface of the first bump and a second side opposite to the first side, and a gap between the first structure and the second structure. The first structure and the second structure are configured to move in relation to each other. The first bump includes a plurality of first teeth over a stop surface of the first bump.
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58.发明授权公开(公告)号：US09930453B2
公开(公告)日：2018-03-27
申请号：US15119116
申请日：2014-07-15
Applicant: GOERTEK INC.
Inventor： Quanbo Zou , Zhe Wang
CPC classification number: H04R7/14 , B81B3/0021 , B81B2201/0257 , B81B2203/0127 , B81B2203/019 , B81C1/0023 , B81C2201/115 , H01L2224/48091 , H01L2224/73265 , H01L2924/15192 , H04R1/04 , H04R19/016 , H04R19/04 , H04R2201/003 , H04R2307/027 , H01L2924/00014
Abstract: The present invention provides a silicon microphone with a high-aspect-ratio corrugated diaphragm and a microphone package including the same. The microphone comprises the corrugated diaphragm on which at least one ring-shaped corrugation is formed in the vicinity of the edge of the diaphragm which is fixed to the substrate, the corrugated diaphragm is flexible, wherein the ratio of the depth of the corrugation to the thickness of the diaphragm is larger than 5:1, preferably 20:1, and the walls of the corrugation are inclined to the surface of the diaphragm at an angle in the range of 80° to 100°. The microphone with the high-aspect-ratio corrugated diaphragm can achieve a consistent and optimal sensitivity and greatly reduce impact applied thereto in a drop test so that the performances, the reproducibility, the reliability and the yield can be improved. The microphone package of the present invention further provides a simplified processing, an improved sensitivity and an improved SNR.
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公开(公告)号：US09776853B2
公开(公告)日：2017-10-03
申请号：US15051264
申请日：2016-02-23
Applicant: Freescale Semiconductor, Inc.
Inventor： Robert F. Steimle , Ruben B. Montez
CPC classification number: B81B3/001 , B81B3/0005 , B81B2201/0221 , B81B2201/0235 , B81B2203/0181 , B81B2203/06 , B81C1/0096 , B81C2201/115 , G01P15/0802 , G01P2015/0871 , G01P2015/0874
Abstract: A mechanism for reducing stiction in a MEMS device by decreasing surface area between two surfaces that can come into close contact is provided. Reduction in contact surface area is achieved by increasing surface roughness of one or both of the surfaces. The increased roughness is provided by forming a micro-masking layer on a sacrificial layer used in formation of the MEMS device, and then etching the surface of the sacrificial layer. The micro-masking layer can be formed using nanoclusters. When a next portion of the MEMS device is formed on the sacrificial layer, this portion will take on the roughness characteristics imparted on the sacrificial layer by the etch process. The rougher surface decreases the surface area available for contact in the MEMS device and, in turn, decreases the area through which stiction can be imparted.
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公开(公告)号：US09550664B2
公开(公告)日：2017-01-24
申请号：US14574784
申请日：2014-12-18
Applicant: FREESCALE SEMICONDUCTOR, INC.
Inventor： Ruben B. Montez , Robert F. Steimle
CPC classification number: B81B3/001 , B81B2201/0235 , B81B2203/0181 , B81C2201/115
Abstract: A mechanism for reducing stiction in a MEMS device by decreasing surface area between two surfaces, such as a travel stop and travel stop region, that can come into close contact is provided. Reduction in contact surface area is achieved by increasing surface roughness of the travel stop region. This is achieved by depositing a polysilicon layer over a dielectric layer using gaseous hydrochloric acid as one of the reactants. A subsequent etch back is performed to further increase the roughness. The deposition of polysilicon and subsequent etch back may be repeated one or more times in order to obtain the desired roughness. A final polysilicon layer may then be deposited to achieve a desired thickness. This final polysilicon layer is patterned to form the travel stop regions. The rougher surface decreases the surface area available for contact and, in turn, decreases the area through which stiction can be imparted.
Abstract translation: 提供了一种用于通过减小可以紧密接触的两个表面之间的表面积（例如行驶停止和行驶停止区域）来减小MEMS装置中的静摩擦的机构。 通过增加行驶停止区域的表面粗糙度来实现接触表面积的减小。 这是通过使用气态盐酸作为反应物之一在电介质层上沉积多晶硅层来实现的。 执行随后的回蚀以进一步增加粗糙度。 多晶硅的沉积和随后的回蚀可以重复一次或多次，以获得所需的粗糙度。 然后可以沉积最终的多晶硅层以达到期望的厚度。 对该最终多晶硅层进行图案化以形成行驶停止区域。 较粗糙的表面减小了可用于接触的表面积，并且进而降低了可赋予粘性的面积。
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