公开(公告)号：US20160372295A1

公开(公告)日：2016-12-22

申请号：US15186717

申请日：2016-06-20

Applicant: SIEMENS HEALTHCARE GMBH

Inventor： Christian RIEDL

IPC: H01J1/16

CPC classification number: H01J1/16 ,  H01J1/3042 ,  H01J3/022 ,  H01J21/105 ,  H01J35/06 ,  H01J2201/30407

Abstract: An emitter has a basic unit with at least one emission surface. Accordingly, the basic unit has deep structuring in a region of the at least one emission surface. More specifically, the basic unit has the deep structuring on both a front side and on a rear side in the region of the emission surface for improving emission properties.

Abstract translation: 发射器具有至少一个发射表面的基本单元。 因此，基本单元在至少一个发射表面的区域中具有深度结构。 更具体地，基本单元在发射表面的区域中具有在前侧和后侧上的深度结构，用于改善发射特性。

公开(公告)号：US08080930B2

公开(公告)日：2011-12-20

申请号：US11852122

申请日：2007-09-07

Applicant: Lyon Bradley King

Inventor： Lyon Bradley King

IPC: H01J1/14 ,  H01J1/16 ,  H01J37/08

CPC classification number: F03H1/00 ,  H01J2201/30407

Abstract: Spindt-type field-emission cathodes for use in electric propulsion (EP) systems having self-assembling nanostructures that can repeatedly regenerate damaged cathode emitter nanotips. A nanotip is created by applying a negative potential near the surface of a liquefied base metal to create a Taylor cone converging to a nanotip, and solidifying the Taylor cone for use as a field-emission cathode. When the nanotip of the Taylor cone becomes sufficiently blunted or damaged to affect its utility, the base metal is re-liquefied by application of a heat source, a negative potential is reapplied to the surface of the base metal to recreate the Taylor cone, and a new nanotip is generated by solidifying the base metal.

Abstract translation: Spindt型场致发射阴极，用于具有自组装纳米结构的电力推进（EP）系统，可以反复再生损坏的阴极发射器纳米尖端。 通过在液化贱金属的表面附近施加负电位以产生会聚到纳米尖端的泰勒锥，并固化泰勒锥以用作场致发射阴极来产生纳米尖端。 当泰勒锥的纳米尖端变得足够钝或损坏以影响其效用时，通过施加热源来重新液化贱金属，将负电位重新施加到贱金属的表面以再生泰勒锥，以及 通过固化贱金属产生新的纳米尖端。

公开(公告)号：US07588475B2

公开(公告)日：2009-09-15

申请号：US11729442

申请日：2007-03-29

Applicant: Keisuke Koga ,  Makoto Yamamoto ,  Akinori Shiota ,  Seigo Kanemaru ,  Masayoshi Nagao

Inventor： Keisuke Koga ,  Makoto Yamamoto ,  Akinori Shiota ,  Seigo Kanemaru ,  Masayoshi Nagao

IPC: H01J9/00

CPC classification number: H01J1/3044 ,  H01J9/025 ,  H01J2201/30407

Abstract: A stable field-emission electron source that does not suffer from a current drop even after a high-current density operation for a long time is provided. The field-emission electron source includes: a substrate; an insulating layer that is formed on the substrate and that has a plurality of openings; cathodes arranged at the respective openings in order to emit electron beams; a lead electrode formed on the insulating layer in order to control emission of electrons from the respective cathodes; and a surface-modifying layer formed on the surface of each of the cathodes emitting electrons, comprising a chemical bond between a cathode material composing the cathodes and a material different from the cathode material.

Abstract translation: 提供即使在长时间的大电流密度操作之后也不会受到电流降低的稳定的场致发射电子源。 场发射电子源包括：衬底; 绝缘层，其形成在所述基板上并且具有多个开口; 阴极排列在相应的开口处以便发射电子束; 形成在所述绝缘层上的引线电极，以便控制来自各个阴极的电子的发射; 以及形成在发射电子的每个阴极的表面上的表面改性层，包括构成阴极的阴极材料与不同于阴极材料的材料之间的化学键。

公开(公告)号：US07175495B2

公开(公告)日：2007-02-13

申请号：US10374263

申请日：2003-02-27

Applicant: Masayuki Nakamoto ,  Atsuo Inoue

Inventor： Masayuki Nakamoto ,  Atsuo Inoue

IPC: H01J9/04

CPC classification number: H01J9/025 ,  H01J31/127 ,  H01J2201/30407 ,  H01J2201/30423

Abstract: A method of manufacturing a field emission device having emitter shapes, comprise the steps of forming a first original plate having a major surface provided with emitter shapes, by cutting a surface portion of a base material, forming a first material layer on the major surface of the first original plate on which the emitter shapes are provided; separating the first material layer from the first original plate, thereby obtaining a second original plate having recesses onto which the emitter shapes on the first original plate are transferred, forming a second material layer on a major surface of the second original plate on which the recesses are provided; and separating the second material layer from the second original plate, thereby to obtain a substrate having projections portions onto which shapes of the recesses of the second original plate are transferred.

Abstract translation: 一种制造具有发射体形状的场致发射器件的方法，包括以下步骤：通过切割基底材料的表面部分形成具有发射体形状的主表面的第一原始板，在主表面上形成第一材料层 提供发射体形状的第一原始板; 将第一材料层与第一原版板分离，从而获得具有凹部的第二原版，第一原版上的发射体形状转移到其上，在第二原版的主表面上形成第二材料层， 被提供; 并且将第二材料层与第二原版分离，从而获得具有第二原版的凹部的形状被转印到其上的突出部的基板。

公开(公告)号：US20060021962A1

公开(公告)日：2006-02-02

申请号：US10902762

申请日：2004-07-30

Applicant: Peter Hartwell ,  Uija Yoon

Inventor： Peter Hartwell ,  Uija Yoon

IPC: B44C1/22 ,  C23F1/00

CPC classification number: H01J9/025 ,  G01Q70/16 ,  G01Q80/00 ,  H01J2201/30407 ,  H01J2329/00

Abstract: A method of fabricating a sharp protrusion on an underlayer is disclosed. A tip layer is deposited on an underlayer and then a mask layer is deposited on the tip layer. The mask layer is patterned with a beam-and-hat pattern that is used to form a beam-and-hat mask in the mask layer. Portions of the tip layer that are not covered by the beam-and-hat mask are isotropically etched to form a tip including a vertex. Beam portions of the beam-and-hat mask support the hat portion and prevent a release of the hat portion during the isotropic etching process. An anisotropic etch process can be used prior to the isotropic etching process to change a character of the tip. The underlayer can be patterned and etched to form a cantilever that includes the sharp protrusion extending outward of a surface of the cantilever.

公开(公告)号：US06943491B2

公开(公告)日：2005-09-13

申请号：US10340160

申请日：2003-01-09

Applicant: Masahide Yamauchi ,  Takashi Itoh ,  Koji Fujii

Inventor： Masahide Yamauchi ,  Takashi Itoh ,  Koji Fujii

IPC: H01J1/02 ,  H01J1/304 ,  H01J29/04 ,  H01J29/46 ,  H01J29/48 ,  H01J29/58

CPC classification number: H01J29/04 ,  H01J29/481 ,  H01J29/488 ,  H01J2201/30407 ,  H01J2229/481

Abstract: In a picture tube device with a field-emission cold cathode, including a plurality of electron-emitting cathodes, and a lead electrode provided with a plurality of apertures surrounding the plurality of electron-emitting cathodes respectively, a surface of the lead electrode has a curved shape that is convex in an electron emission direction. This makes it possible to obtain a high-resolution and high-performance picture tube device that has an excellent focus performance over an entire beam current.

Abstract translation: 在具有场致发射冷阴极的显像管装置中，包括多个电子发射阴极，以及分别具有围绕多个电子发射阴极的多个孔的引线电极，所述引线电极的表面具有 在电子发射方向上凸起的弯曲形状。 这使得可以获得在整个束电流上具有优异的聚焦性能的高分辨率和高性能的显像管装置。

公开(公告)号：US20050092929A1

公开(公告)日：2005-05-05

申请号：US10983566

申请日：2004-11-08

Applicant: Conrad Schneiker

Inventor： Conrad Schneiker

IPC: G21K1/08

CPC classification number: G21K1/08 ,  B33Y80/00 ,  G21K5/04 ,  H01J1/304 ,  H01J3/021 ,  H01J9/025 ,  H01J37/065 ,  H01J37/073 ,  H01J37/12 ,  H01J2201/30407 ,  H01J2237/062 ,  H01J2237/06341 ,  H01J2237/06375 ,  H01J2237/1205 ,  H01J2237/1207

Abstract: A solid state sub-nanometer-scale electron beam emitter comprising a multi-layered structure having a nano-tip electron emitter and tunnel emission junction formed on substrate, an initial electron beam extraction electrode, a “nano-sandwich Einzel” electrode, and a topmost protective layer.

Abstract translation: 一种固态亚纳米级电子束发射器，包括在基底上形成的具有纳米尖端电子发射体和隧道发射结的多层结构，初始电子束提取电极，“纳米夹心Einzel”电极和 最上层的保护层。

公开(公告)号：US20030015658A1

公开(公告)日：2003-01-23

申请号：US10245656

申请日：2002-09-16

Inventor： Thomas E. Felter

IPC: H01J049/42 ,  H01J049/04

CPC classification number: H01J49/147 ,  H01J1/3042 ,  H01J49/08 ,  H01J49/4215 ,  H01J2201/30407

Abstract: An improved quadrupole mass spectrometer is described. The improvement lies in the substitution of the conventional hot filament electron source with a cold cathode field emitter array which in turn allows operating a small QMS at much high internal pressures then are currently achievable. By eliminating of the hot filament such problems as thermally nullcrackingnull delicate analyte molecules, outgassing a nullhotnull filament, high power requirements, filament contamination by outgas species, and spurious em fields are avoid all together. In addition, the ability of produce FEAs using well-known and well developed photolithographic techniques, permits building a QMS having multiple redundancies of the ionization source at very low additional cost.

Abstract translation: 描述了改进的四极质谱仪。 改进之处在于用冷阴极场发射体阵列代替传统的热丝电子源，该冷阴极场发射器阵列又允许在很高的内部压力下操作小的QMS，然后目前是可实现的。 通过消除热丝，诸如热“裂解”精细的分析物分子，排除“热”丝，高功率需求，排气物质的细丝污染和杂散电场等问题都避免在一起。 此外，使用已知和发展良好的光刻技术制造FEA的能力允许以非常低的附加成本构建具有多个电离源冗余的QMS。

公开(公告)号：US20010008364A1

公开(公告)日：2001-07-19

申请号：US09779508

申请日：2001-02-09

Inventor： Yongjun Jeff Hu

IPC: H01J001/62 ,  H01J019/10

CPC classification number: H01J9/025 ,  H01J2201/30407

Abstract: An emission site for a large area passive matrix cold cathode field emission display having an emission tip with a sharp profile is disclosed. A metallic film formed of iridium silicide (IrSi) is used to coat the tip. By using IrSi the tips of the emission sites can be formed at low temperatures. In addition, IrSi is a fine grain material that maintains a sharp profile and can be formed in a layer as thin as 100 null.

Abstract translation: 公开了具有具有尖锐轮廓的发射尖端的大面积无源矩阵冷阴极场发射显示器的发射场所。 使用由铱硅化物（IrSi）形成的金属膜来涂覆尖端。 通过使用IrSi，可以在低温下形成发射部位的尖端。 此外，IrSi是细晶粒材料，其保持锋利的轮廓并且可以形成为薄至100埃的层。

公开(公告)号：US5965898A

公开(公告)日：1999-10-12

申请号：US937412

申请日：1997-09-25

Applicant: Gary W. Jones ,  Steven M. Zimmerman

Inventor： Gary W. Jones ,  Steven M. Zimmerman

IPC: H01J3/02 ,  H01J9/02 ,  H01L29/41 ,  H01J1/16 ,  H01J19/10

CPC classification number: H01J9/025 ,  H01J3/022 ,  H01J2201/30407

Abstract: A high aspect ratio gated emitter structure and a method of making the structure are disclosed. Emitters may be provided in a densely packed array on a support. Two distinct layers of insulator material may surround the emitters. The lower layer of insulator material may be a non-conformally applied spray-on or spin-on insulator. The non-conformal insulator material may pool at the base regions of the emitters so that the tip regions of the emitters extend out of the lower layer of insulator material. The upper layer of insulator material is applied to the lower layer using a conformal process so that the tip regions of the emitters are covered by the upper layer of insulator material. Gate material is applied to the upper layer of insulator material. Holes are provided in the gate material over the tip regions and wells are provided in the upper layer of insulator material surrounding the tip regions. An etch resistant layer may optionally be provided between the upper layer of insulator material and the gate material.