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公开(公告)号：JP2006291323A
公开(公告)日：2006-10-26
申请号：JP2005115940
申请日：2005-04-13
Inventor： MIURA SHIGENORI
CPC classification number: H01L2224/11462
Abstract: PROBLEM TO BE SOLVED: To provide a method for forming an Sn alloy thin film in which the prevention in the generation of whiskers and satisfactory solderability (low melting point) are made consistent. SOLUTION: Disclosed is a method where a base is dipped into a plating bath, and an Sn-Ag-Cu three-element alloy thin film is formed on the whole surface or a part of the base by electroplating. This method is characterized in that the plating bath contains an Sn compound, an Ag compound, a Cu compound, an inorganic chelating agent and an organic chelating agent; the inorganic chelating agent is a metal fluoro complex-based chelating agent represented by the chemical formula (I) below, and is blended at a ratio of 1 to 300 pts.mass to 1 pt.mass of the Ag compound; and the organic chelating agent is porphyrins, and is blended at a ratio of 1 to 200 pts.mass to 1 pt.mass of the Cu compound: MF X (X-Y)- (I) (In the formula, M represents an arbitrary metal, X represents an arbitrary natural number, and Y represents the oxidation number of M). COPYRIGHT: (C)2007,JPO&INPIT
Abstract translation: 要解决的问题：提供一种形成Sn合金薄膜的方法，其中防止产生晶须和令人满意的可焊性（低熔点）是一致的。 解决方案：公开了将基底浸入电镀浴中的方法，并且通过电镀在整个表面或基底的一部分上形成Sn-Ag-Cu三元素合金薄膜。 该方法的特征在于镀浴含有Sn化合物，Ag化合物，Cu化合物，无机螯合剂和有机螯合剂; 无机螯合剂是由下述化学式（I）表示的金属氟络合物螯合剂，以1〜300质量％的比例混合至1重量％的Ag化合物; 有机螯合剂为卟啉，并以1〜200质量份〜1质量％的Cu化合物的比例混合：MF（SB）X （XY） - （I）（式中，M表示任意的金属，X表示任意的自然数，Y表示M的氧化数）。 版权所有（C）2007，JPO＆INPIT
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公开(公告)号：JP3711141B1
公开(公告)日：2005-10-26
申请号：JP2005115940
申请日：2005-04-13
Applicant: Fcm株式会社
Inventor： 茂紀 三浦
CPC classification number: H01L2224/11462
Abstract: 【課題】 本発明の目的は、ウィスカの発生防止と良好なはんだ付性（低融点）を両立させたＳｎ合金薄膜を形成する方法を提供することにある。
【解決手段】 本発明の方法は、基材をめっき浴に浸漬し、Ｓｎ−Ａｇ−Ｃｕ三元合金薄膜を基材上の全面または部分に電気めっきにより形成するものであり、Ｓｎ化合物と、Ａｇ化合物と、Ｃｕ化合物と、無機系キレート剤と、有機系キレート剤とを含むめっき浴を用い、無機系キレート剤は、化学式（Ｉ）で表される金属フルオロ錯体系キレート剤であり、Ａｇ化合物１質量部に対して１質量部以上３００質量部以下の比率で配合され、有機系キレート剤は、ポルフィリン類であり、Ｃｕ化合物１質量部に対して１質量部以上２００質量部以下の比率で配合される。
ＭＦ
X
(XY)- ・・・（Ｉ）
（化学式（Ｉ）中、Ｍは任意の金属を示し、Ｘは任意の自然数を示し、ＹはＭの酸化数を示す。）
【選択図】 なし-
公开(公告)号：JP2005220374A
公开(公告)日：2005-08-18
申请号：JP2004026740
申请日：2004-02-03
Inventor： MIURA SHIGENORI
Abstract: PROBLEM TO BE SOLVED: To provide a terminal which allows to prevent occurrence of whiskers and to have satisfactory solderability at low temperatures in combination and which is composed of an electrically conductive substrate having a thin surface layer with a uniform thickness.
SOLUTION: In the terminal, a surface layer composed of a quaternary alloy of Sn-Ag-Cu-In or Sn-Ag-Cu-Bi is formed on the whole face or a part of an electrically conductive substrate by electroplating.
COPYRIGHT: (C)2005,JPO&NCIPIAbstract translation: 要解决的问题：提供一种能够防止晶须的发生并且在低温下组合具有令人满意的可焊性的端子，该端子由具有均匀厚度的薄表面层的导电基板构成。 解决方案：在端子中，通过电镀在整个面或导电基板的一部分上形成由Sn-Ag-Cu-In或Sn-Ag-Cu-Bi的四元合金构成的表面层。 版权所有（C）2005，JPO＆NCIPI
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公开(公告)号：JP3655915B2
公开(公告)日：2005-06-02
申请号：JP2003315131
申请日：2003-09-08
Applicant: Fcm株式会社
Inventor： 茂紀 三浦
CPC classification number: H01L21/4846 , H01L21/4864 , H05K3/108 , H05K3/381 , H05K3/388 , H05K3/423 , H05K3/426 , H05K2201/0154 , H05K2201/0355 , H05K2201/0394 , H05K2201/09509 , H05K2201/09563 , H05K2201/09609 , H05K2203/092 , Y10T29/49155 , Y10T29/49165 , Y10T428/24917
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Patent Agency Ranking
公开(公告)号：JP2005057132A
公开(公告)日：2005-03-03
申请号：JP2003287962
申请日：2003-08-06
Inventor： MIURA SHIGENORI
CPC classification number: H05K3/244
Abstract: PROBLEM TO BE SOLVED: To provide a circuit board which prevents short-circuiting or disconnection of a circuit by avoiding migration or electrolytic corrosion of a conductive layer of the circuit.
SOLUTION: The circuit board includes the circuit of a conductive layer made of a metal Cu, Al, Ag or an alloy containing at least one of such metals formed on a substrate. A ruthenium layer made of ruthenium is formed on the conductive layer.
COPYRIGHT: (C)2005,JPO&NCIPIAbstract translation: 要解决的问题：提供一种通过避免电路的导电层的迁移或电解腐蚀来防止电路短路或断开的电路板。 解决方案：电路板包括由金属Cu，Al，Ag或包含至少一种形成在基底上的金属的合金制成的导电层的电路。 在导电层上形成由钌构成的钌层。 版权所有（C）2005，JPO＆NCIPI
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公开(公告)号：JP2004355972A
公开(公告)日：2004-12-16
申请号：JP2003152875
申请日：2003-05-29
Inventor： MIURA SHIGENORI
IPC: G02F1/1343 , C23C14/08 , G09F9/30 , H01B1/08 , H01B5/14 , H01L31/04 , H01L51/50 , H05B33/14 , H05B33/28
CPC classification number: Y02E10/50
Abstract: PROBLEM TO BE SOLVED: To provide a transparent electrode which has a high light transmittance, low electric resistance, and in which separation and cracks or the like hardly occur, and which is superior in etching performances.
SOLUTION: The transparent electrode is composed of at least one kind of metal oxides selected from a group made of tin oxide, lead oxide, rhenium oxide, and chrome oxide, and ruthenium oxide.
COPYRIGHT: (C)2005,JPO&NCIPI-
公开(公告)号：JP2004209926A
公开(公告)日：2004-07-29
申请号：JP2003002471
申请日：2003-01-08
Inventor： MIURA SHIGENORI
CPC classification number: C23C14/02 , C23C14/165
Abstract: PROBLEM TO BE SOLVED: To provide an Si laminated body which is hard to break, of which the yield is good, and therefore, which is excellent costwise, and is useful as an Si wafer or the like.
SOLUTION: For this Si laminated body, an Si layer is formed by the sputtering method on either one surface or both of the front and rear surfaces of a base sheet. In this case, the base sheet has a thickness of 4 to 1,000 μm, and the surface roughness Ra value at an arbitrary temperature at 180°C or higher is 2 μm or less. Also, a difference between the Ra value at the arbitrary temperature and the Ra value at 25°C is within 5%. Also, the thickness of the Si layer is 0.0005 to 200 μm, and Si layer is made of Si of which the purity is 99.999% or higher.
COPYRIGHT: (C)2004,JPO&NCIPI-
公开(公告)号：JP2004200557A
公开(公告)日：2004-07-15
申请号：JP2002369537
申请日：2002-12-20
Applicant: Fcm Kk , Fcm株式会社 , Furukawa Electric Co Ltd:The , Nippon Foil Mfg Co Ltd , 古河電気工業株式会社 , 日本製箔株式会社
Inventor： ASHIZAWA KOICHI , MIURA SHIGENORI , IMAI TAKAHIRO
IPC: H05K3/38
Abstract: PROBLEM TO BE SOLVED: To provide a metal plate for a wiring board, which is especially superior in thermal conductivity by forming a plate stack wherein a comparatively thick metal plate for lamination wiring, such as a metal plate for a metal core print wiring and a metal plate for a large-current wiring board is used, and a laminated plate is formed by bonding resin on the whole surface or a portion of the metal plate. SOLUTION: On a surface of the metal plate of 0.1mm or larger thickness, the metal plate for lamination wiring consists of a first coarsening surface, constituted of many protruded parts of mean grain diameter of 1-30μm, partitioned by recessed parts formed by selectively etching a part of the metal plate surface, and a second coarsening surface, wherein fine particles of mean grain diameter of 0.1-10μm are formed on the whole surface or a part of the protruded parts or the recessed parts of the first coarsening surface through electrodeposition, The plate stack is formed by bonding the whole surface or a part of the metal plate surface, where the first and the second coarsening surfaces are formed to resin. COPYRIGHT: (C)2004,JPO&NCIPI
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