公开(公告)号：KR1020080113434A

公开(公告)日：2008-12-30

申请号：KR1020087026736

申请日：2007-03-29

Applicant: 고쿠리츠다이가쿠호진 도호쿠다이가쿠 ,  가부시키가이샤 니혼 세라떽꾸

Inventor： 오미다다히로 ,  기시유키오 ,  이구치마비토 ,  이치카와요시타카 ,  고마츠유스케

IPC: C04B38/00 ,  C04B35/00

CPC classification number: C04B38/0058 ,  C04B35/111 ,  C04B35/505 ,  C04B35/6316 ,  C04B2235/3418 ,  C04B2235/36 ,  C04B2235/5427 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/656 ,  C04B2235/72 ,  C04B2235/77 ,  Y10T428/249921 ,  C04B35/00 ,  C04B38/0054

Abstract: This invention provides a porous member that, when used in a field requiring a high level of cleanness, can suppress energy loss in a microwave band and can evenly disperse gas. The porous member is formed of a porous ceramic and has a dielectric loss tangent at a microwave band of not more than 1 x 10-3. A ceramic member comprising a ceramic sinter comprising this porous member in a part thereof is also provided. ® KIPO & WIPO 2009

Abstract translation: 本发明提供一种多孔构件，当在需要高水平清洁度的场中使用时，可以抑制微波带中的能量损失并能均匀地分散气体。 多孔构件由多孔陶瓷形成，并且在微波带处的介电损耗角正切不大于1×10 -3。 还提供了陶瓷构件，其包括在其一部分中包括该多孔构件的陶瓷烧结体。 ®KIPO＆WIPO 2009

公开(公告)号：KR1020080034079A

公开(公告)日：2008-04-18

申请号：KR1020070102596

申请日：2007-10-11

Applicant: 도쿄엘렉트론가부시키가이샤 ,  고쿠리츠다이가쿠호진 도호쿠다이가쿠

Inventor： 히라야마마사키 ,  오미다다히로 ,  기타무라마사유키 ,  무라타히토시

IPC: H05H1/24 ,  H05H1/30

CPC classification number: H01J37/32201 ,  H01J37/32229 ,  H01J37/32798 ,  H05H1/46 ,  H05H2001/2412 ,  H05H2001/4607

Abstract: A plasma processing apparatus and a driving method thereof, and a plasma processing method, and a manufacturing method of an electronic device are provided to activate cleaning gas by utilizing the power of microwave. A plasma processing apparatus, which includes a space part(66) and a cleaning gas path(61), executes a plasma process on an objective processing member disposed in a processing chamber by utilizing microwaves through a waveguide(35). The space part is surrounded by a wall formed dielectrics in the waveguide. The cleaning gas path is used to supply cleaning gas into the processing chamber through the space part.

Abstract translation: 提供等离子体处理装置及其驱动方法以及等离子体处理方法以及电子装置的制造方法，以通过利用微波的功率来激活清洁气体。 包括空间部分（66）和清洁气体路径（61）的等离子体处理装置通过利用通过波导（35）的微波对设置在处理室中的物镜处理部件执行等离子体处理。 空间部分被波导中的壁形电介质包围。 清洁气体路径用于通过空间部分将清洁气体供应到处理室中。

公开(公告)号：KR1020080030511A

公开(公告)日：2008-04-04

申请号：KR1020070097497

申请日：2007-09-27

Applicant: 도쿄엘렉트론가부시키가이샤 ,  고쿠리츠다이가쿠호진 도호쿠다이가쿠

Inventor： 호리구치다카히로 ,  오미다다히로 ,  히라야마마사키

IPC: H05H1/24 ,  H05H1/30 ,  H05H1/46

CPC classification number: H01J37/32238 ,  H01J37/32201 ,  H01J37/32348 ,  H01J37/3244 ,  H05H1/2406 ,  H05H1/46 ,  H05H2001/2412 ,  H05H2001/463

Abstract: A microwave plasma processing device, a manufacturing method of a dielectric window, and a processing method of a microwave plasma are provided to uniformly generate the plasma through a uniformly and slowly supplied gas to a predetermined position. A microwave plasma processing device includes a slot antenna, a dielectric window, a gas supply unit, and a processing chamber. The slot antenna propagates a microwave. The dielectric window transmits the propagated microwave. The gas supply unit supplies a predetermined gas. The processing chamber processes a subject by converting the predetermined gas into plasma with the microwave transmitted through the dielectric window. The dielectric window includes a first porous material(31Ph) and a second porous material(31Pl). The first porous material has first porosity. The second porous material is connected to the first porous material and has second porosity lower than the first porosity. The gas supply unit induces the predetermined gas in the processing chamber from the second porous material through the first porous material.

Abstract translation: 提供微波等离子体处理装置，电介质窗的制造方法和微波等离子体的处理方法，以通过均匀缓慢供给的气体均匀地产生等离子体至规定位置。 微波等离子体处理装置包括缝隙天线，电介质窗，气体供给单元和处理室。 缝隙天线传播微波。 电介质窗口传播传播的微波。 气体供给单元供给预定的气体。 处理室通过将微波传输通过电介质窗口将预定气体转换为等离子体来处理对象。 电介质窗包括第一多孔材料（31Ph）和第二多孔材料（31P1）。 第一多孔材料具有第一孔隙度。 第二多孔材料连接到第一多孔材料并且具有低于第一孔隙率的第二孔隙率。 气体供给单元通过第一多孔材料从第二多孔材料诱导处理室中的预定气体。

公开(公告)号：KR1020080009740A

公开(公告)日：2008-01-29

申请号：KR1020077028517

申请日：2006-06-07

Applicant: 고쿠리츠다이가쿠호진 도호쿠다이가쿠 ,  도쿄엘렉트론가부시키가이샤

Inventor： 오미다다히로 ,  데라모토아키노부 ,  혼다미노루 ,  나카니시도시오

IPC: H01L21/318

CPC classification number: H01L21/3185

Abstract: Disclosed is a plasma nitriding method wherein a nitriding is performed at a process temperature of not less than 500°C in a process chamber of a plasma processing apparatus by causing a microwave-excited high-density plasma of a nitrogen-containing gas, which is formed by introducing a microwave into the process chamber using a multi-slotted planar antenna, to act on silicon in the surface of an object to be processed.

Abstract translation: 公开了一种等离子体氮化方法，其中在等离子体处理装置的处理室中，在不低于500℃的工艺温度下进行氮化，通过使含氮气体的微波激发的高密度等离子体 通过使用多槽平面天线将微波引入到处理室中，作用在被处理物体的表面中的硅上。

公开(公告)号：KR1020070113299A

公开(公告)日：2007-11-28

申请号：KR1020077023939

申请日：2006-03-28

Applicant: 고쿠리츠다이가쿠호진 도호쿠다이가쿠 ,  도쿄엘렉트론가부시키가이샤

Inventor： 오미다다히로 ,  마츠오카다카아키 ,  나카야마쇼조 ,  이토히로노리

IPC: C23C14/24 ,  H01L51/50 ,  H05B33/10 ,  C23C14/12

CPC classification number: C23C14/564 ,  C23C14/12 ,  C23C14/228 ,  C23C14/24 ,  H01L51/0008 ,  H01L51/0081 ,  H01L51/56 ,  H01L2227/32

Abstract: This invention provides an apparatus for film formation, comprising a blowout vessel having a construction for blowing out an organic EL molecular gas. The apparatus comprises a plurality of organic EL material vessels and a piping system for connecting the plurality of organic EL material vessels to the blowout vessel. The plurality of organic EL material vessels constructed so as to be selectively brought to an organic EL molecule feed state. The piping system is constructed so that the transport gas is fed into each organic EL material vessel in such a manner that the pressure during film formation and the pressure during non-film formation are equal to each other. During non-film formation, the transport gas is allowed to flow from one of the organic EL material vessels to other material vessel.

Abstract translation: 本发明提供了一种用于成膜的装置，包括具有吹出有机EL分子气体的结构的吹出容器。 该装置包括多个有机EL材料容器和用于将多个有机EL材料容器连接到吹出容器的管道系统。 多个有机EL材料容器被构造成选择性地进入有机EL分子进料状态。 管道系统被构造成使得输送气体以这样的方式进给到每个有机EL材料容器中，使得成膜期间的压力和非成膜期间的压力彼此相等。 在非成膜期间，允许运输气体从有机EL材料容器之一流动到其他材料容器。