Abstract:
PURPOSE: A manufacturing method of a mold, the mold, and a forming method of fine patterns using the mold are provided to reduce costs needed for manufacturing processes and to form nano-sized line patterns on a substrate. CONSTITUTION: A manufacturing method of a mold includes the following: a first pattern is formed on a substrate(210) using ultraviolet ray shielding materials; a molding resin is applied on the substrate; a mask mold with a second pattern is pressurized on the substrate with the molding resin in order to arrange a surface which is shared by the first pattern and the second pattern; the patterns are imprinted; the molding resin is cured; and the master mold is removed from the substrate.
Abstract:
PURPOSE: A fine pattern forming method with a photo mask and a nano-imprinting mold is provided to form patterns of various shapes and to form nano-sized line patterns by using micro-sized line patterns. CONSTITUTION: A fine pattern forming method includes the following: Pattern forming resist(120) is applied on a substrate(110); a master mold with a first pattern is in contact with the upper side of the pattern forming resist; the master mold is pressurized to be imprinted; the master mold is irradiated with ultraviolet rays through a photo-mask with a second pattern which is different from the first pattern; and the master mold and the photo-mask are separated from the substrate to develop the pattern forming resist.
Abstract:
체크밸브 방식으로 유체의 흐름이 차단되고 핸들의 조작을 통해 유체의 흐름이 진행되도록 핸들의 구동 메커니즘이 개선된 레버형 핸들을 갖는 벨로우즈 밸브가 개시된다. 벨로우즈 밸브는 내부에 유로가 형성된 몸체와, 하면에는 유로를 흐르는 유체가 유입되는 유입통로가 형성되고 측면에는 유입통로로 유입된 유체를 배출시키는 배출통로가 형성된 관부재와, 관부재에 대해 승하강 가능한 스템과, 스템의 승하강에 의해 유로를 폐쇄 또는 개방시키는 스템베드와, 스템의 외주연에 형성되는 벨로우즈와, 스템의 상부에 스템의 길이방향과 직교되는 방향으로 결합된 핀부재 및 몸체에 회전가능하게 연결되고 핀부재를 슬라이딩 되도록 안내하는 가이드부가 형성되어 몸체에 대해 회전됨에 따라 스템을 승하강시키는 핸들을 포함한다. 따라서, 간단한 핸들의 조작을 통해 밸브의 개폐가 이루어지며, 밸브의 안전성 및 신뢰성을 증진시킬 수 있다. 벨로우즈, 밸브
Abstract:
PURPOSE: A method for manufacturing a thin film transistor using a single copper target and thin film transistor using the method are provided to perform a sputtering process by copper or a single copper alloy target, thereby providing a thin fill transistor which forms a source and a drain by copper or copper alloy. CONSTITUTION: A gate electrode(105) is formed on a glass substrate(101). A gate insulating film(107), a semiconductor layer(117), and an ohmic contact layer(119) are deposited on the gate electrode. A natural oxide film is formed on the ohmic contact layer. An oxide film(115) is deposited on the ohmic contact layer using metal including copper. A source-drain layer(121) is deposited on the oxide film using metal including the copper.
Abstract:
PURPOSE: A ReRAM device and a manufacturing method thereof are provided to improve the interfacial property and memory property of a ReRAM device by forming a second electrode layer pattern after forming an adhesive patter between the second electrode pattern and a metal oxide layer. CONSTITUTION: A substrate(100) comprises a substrate insulating layer(120) and a substrate body layer(110). A first electrode layer(200) is formed on the substrate. A metal oxide layer(300) is formed on the first electrode layer. A self-assembled monolayer, which includes an aperture pattern exposing the metal oxide layer, is formed on the metal oxide layer. A second electrode layer pattern(500) is formed on the metal oxide layer.