公开(公告)号：KR1020090026774A

公开(公告)日：2009-03-13

申请号：KR1020087031538

申请日：2007-06-13

Applicant: 도쿄엘렉트론가부시키가이샤 ,  고쿠리츠 다이가쿠 호진 도호쿠 다이가쿠

Inventor： 모야마카즈키 ,  야기야스시 ,  노자와토시히사 ,  오오미타다히로 ,  가와무라츄이치 ,  요시노키미히코

IPC: H05B33/10 ,  H01L51/50

CPC classification number: H01L51/001 ,  C23C14/12 ,  C23C14/28 ,  H01L51/0021 ,  H01L51/56 ,  H01L51/0008

Abstract: Disclosed is an apparatus for manufacturing a light-emitting device, which comprises a plurality of processing chambers for forming a light-emitting device having a plurality of layers including an organic layer on a subject to be processed, and wherein the substrate to be processed is sequentially conveyed into the processing chambers. This apparatus is characterized in that the processing chambers are connected substantially linearly, and when the substrate to be processed is conveyed between two adjacent processing chambers, the two processing chambers are filled with a gas which is not reactive with the layers on the substrate.

Abstract translation: 公开了一种用于制造发光器件的设备，其包括多个处理室，用于形成具有包括待处理对象上的有机层的多个层的发光器件，并且其中待处理的衬底为 依次传送到处理室。 该装置的特征在于，处理室基本上线性地连接，并且当待处理的基板在两个相邻的处理室之间传送时，两个处理室被填充有不与基板上的层反应的气体。

公开(公告)号：KR1020090010972A

公开(公告)日：2009-01-30

申请号：KR1020087027056

申请日：2007-10-04

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 우에다히로카즈 ,  노자와토시히사

IPC: H01L21/28 ,  H01L21/3205

CPC classification number: H01L21/2855 ,  H01L21/76843 ,  H01L21/76846 ,  H01L23/53238 ,  H01L2924/0002 ,  Y10T428/24612 ,  H01L2924/00

Abstract: Disclosed is a method for forming a thin film, which is characterized by comprising a prevention film-forming step wherein a charging damage prevention film for preventing charging damage is formed by sputtering on the surface of an object to be processed, and a thin film-forming step wherein a desired thin film is formed by sputtering on the surface of the charging damage prevention film which is formed on the object to be processed.

Abstract translation: 公开了一种形成薄膜的方法，其特征在于包括防止膜形成步骤，其中通过溅射在被处理物体的表面上形成用于防止充电损伤的充电损坏防止膜，以及薄膜形成步骤， 形成步骤，其中通过溅射形成所需的薄膜，所述薄膜通过形成在待处理对象上的充电损伤防止膜的表面上而形成。

公开(公告)号：KR1020080085692A

公开(公告)日：2008-09-24

申请号：KR1020080020948

申请日：2008-03-06

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 노자와토시히사

IPC: H01L21/00 ,  H01L21/02

CPC classification number: F16K31/528 ,  F16K1/24 ,  Y10T137/0396

Abstract: An opening and a shutting valve is provided to reduce an amount of air discharge contacting a seal member and degradation of the seal member caused due to radicals of plasma, and to extend lifespan of the seal member and thus reduce running cost. An opening and shutting valve is provided between a chamber for keeping its interior in a vacuum state and discharging devices, and comprises a valve body(110) having an opening(111) connected in fluid communication to the chamber and the discharging devices, a valve assembly(120) housed in the valve body to move near to and retreat away from the opening to open and close the opening, a seal member(120b) formed on the valve assembly to seal the opening when the valve assembly closes the opening, a straight moving means to advance and retreat the valve assembly, a valve retreating portion(113b) formed away from the opening to which the valve assembly is retreated, and a pivoting means to pivot the valve retreating portion and the valve assembly between a position that corresponds to the opening and a position that corresponds to the valve retreating portion.

Abstract translation: 提供了一个开闭阀，以减少与密封件接触的空气排放量和由于等离子体的自由基引起的密封件的劣化，并延长密封件的使用寿命，从而降低运行成本。 在室内保持打开和关闭阀的状态为真空状态，并具有排出装置的阀体（110），阀体（110）具有与腔室连通的开口（111）和排出装置，阀门 组件（120），其容纳在所述阀体中以使所述开口靠近和后退以打开和关闭所述开口;形成在所述阀组件上的密封构件（120b），以在所述阀组件关闭所述开口时密封所述开口; 用于推进和后退阀组件的直线移动装置，远离阀组件退回的开口形成的阀回缩部分（113b）以及枢转装置，用于将阀回缩部分和阀组件枢转在对应的位置 并且与阀回位部对应的位置。

公开(公告)号：KR1020080072881A

公开(公告)日：2008-08-07

申请号：KR1020087012912

申请日：2006-11-15

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 티엔차이쫑 ,  니시즈카테츠야 ,  노자와토시히사

IPC: C23C16/00

CPC classification number: H05H1/46 ,  H01J37/32192 ,  H01J37/3222 ,  H01J37/3244

Abstract: a treatment vessel having a ceiling with an opening so that vacuuming can be performed inside; a table arranged in the treatment vessel for mounting an object to be treated; a top plate made of a dielectric body transmitting microwaves and hermetically mounted at the opening of the ceiling; a flat antenna member arranged on the upper surface of the top plate for introducing microwaves into the treatment vessel; and a coaxial waveguide having a center conductor connected to a center portion of the flat antenna member for supplying microwaves. A gas passage is formed through the center conductor, the center portion of the flat antenna member, and the center portion of the top plate. An electric field attenuating concave portion for attenuating field intensity of the center portion of the top plate is arranged on the upper surface of the center region of the top plate.

Abstract translation: 处理容器，其具有带有开口的天花板，从而能够在内部进行抽真空; 布置在处理容器中的用于安装待处理物体的台子; 由介电体制成的顶板，其传输微波并气密地安装在天花板的开口处; 平面天线构件，其设置在所述顶板的上表面上，用于将微波引入所述处理容器; 以及具有连接到用于提供微波的平坦天线构件的中心部分的中心导体的同轴波导。 通过中心导体，平坦天线构件的中心部分和顶板的中心部分形成气体通道。 用于衰减顶板中心部分的场强的电场衰减凹部布置在顶板的中心区域的上表面上。

公开(公告)号：KR1020080054430A

公开(公告)日：2008-06-17

申请号：KR1020087010398

申请日：2006-10-26

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 노자와토시히사 ,  니시즈카테츠야

IPC: H01L21/3065

CPC classification number: H01L21/0337 ,  H01L21/31144

Abstract: Disclosed is an etching method for etching a layer to be processed which is formed on the surface of an object body. This etching method is characterized by comprising a resist-forming step wherein a resist layer is uniformly formed on the surface of the object body; a mask-forming step wherein a patterned etching mask is formed by providing the resist layer with a certain recess for etching; a plasma-resistant film-forming step wherein a plasma-resistant film is formed over the entire surface of the etching mask including the bottom and lateral surfaces of the recess for etching; a bottom part plasma-resistant film-removing step wherein the plasma-resistant film formed on the bottom surface of the recess for etching is removed; and a main etching step wherein the layer to be processed is etched by using the etching mask after the bottom part plasma-resistant film-removing step.

Abstract translation: 公开了一种用于蚀刻形成在物体表面上的被处理层的蚀刻方法。 该蚀刻方法的特征在于包括抗蚀剂形成步骤，其中抗蚀剂层均匀地形成在物体的表面上; 掩模形成步骤，其中通过为抗蚀剂层提供用于蚀刻的某个凹部来形成图案化的蚀刻掩模; 等离子体成膜步骤，其中在包括用于蚀刻的凹槽的底表面和侧表面的蚀刻掩模的整个表面上形成耐等离子体膜; 底部等离子体抗蚀膜去除步骤，其中形成在用于蚀刻的凹槽的底表面上的耐等离子体膜被去除; 以及主要蚀刻步骤，其中在底部等离子体抗蚀膜去除步骤之后，通过使用蚀刻掩模来蚀刻待处理的层。