公开(公告)号：KR1020140112272A

公开(公告)日：2014-09-23

申请号：KR1020130026804

申请日：2013-03-13

Applicant: 삼성전자주식회사

Inventor： 박영환

IPC: H01L29/778 ,  H01L21/335

Abstract: Disclosed are a high electron mobility transistor and a method of manufacturing the same. The disclosed high electron mobility transistor includes a depletion formation region which consists of a first region which is prepared on a channel supply layer and forms a depletion region in a 2-dimensional electron gas, and a second region which is extended from the first region and is prepared between the first region and a source/drain electrode. The hole concentration of the second region is lower than that of the first region.

Abstract translation: 公开了高电子迁移率晶体管及其制造方法。 所公开的高电子迁移率晶体管包括耗尽形成区域，该耗尽形成区域由在通道供应层上制备并在二维电子气体中形成耗尽区域的第一区域和从第一区域延伸的第二区域和 在第一区域和源极/漏极之间制备。 第二区域的空穴浓度低于第一区域的空穴浓度。

公开(公告)号：KR1020140042470A

公开(公告)日：2014-04-07

申请号：KR1020120109267

申请日：2012-09-28

Applicant: 삼성전자주식회사

Inventor： 전우철 ,  박영환 ,  오재준 ,  김경연 ,  김준용 ,  박기열 ,  신재광 ,  황선규

IPC: H01L29/778 ,  H01L21/335

CPC classification number: H01L29/778 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/42316 ,  H01L29/7786

Abstract: A normally off high electron mobility transistor is disclosed. The disclosed normally off high electron mobility transistor includes a channel layer which includes a first nitride semiconductor, a channel supply layer which includes a second nitride semiconductor and induces a 2D electron gas on the channel layer, a source electrode and a drain electrode in both sides of the channel supply layer, a depletion formation layer which forms a depletion region in the 2D electron gas on the channel supply layer and has at least two thicknesses, a gate insulating layer on the depletion formation layer, and a gate electrode which touches the depletion formation layer on the gate insulating layer.

Abstract translation: 公开了常闭高电子迁移率晶体管。 所公开的常关高电子迁移率晶体管包括沟道层，其包括第一氮化物半导体，包括第二氮化物半导体的沟道供应层，并且在沟道层上引入2D电子气体，在两侧引入源电极和漏电极 的沟道供应层，耗尽层形成层，其在沟道供应层上的2D电子气中形成耗尽区，并且具有至少两个厚度，在耗尽层上的栅极绝缘层，以及接触耗尽层的耗尽层 栅极绝缘层上的形成层。

公开(公告)号：KR1020140011585A

公开(公告)日：2014-01-29

申请号：KR1020120077923

申请日：2012-07-17

Applicant: 삼성전자주식회사

Inventor： 전우철 ,  박기열 ,  박영환 ,  신재광 ,  오재준 ,  최혁순 ,  하종봉

IPC: H01L29/778 ,  H01L21/335

CPC classification number: H01L29/778 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/407 ,  H01L29/41758 ,  H01L29/41766 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7786

Abstract: A high electron mobility transistor (HEMT) and a manufacturing method thereof are disclosed. The disclosed HEMT includes: a channel layer; a channel supply layer which is formed on the channel layer; a source electrode and a drain electrode which are formed on the channel layer or the channel supply layer; a gate electrode which is arranged between the source electrode and the drain electrode; and a source pad and a drain pad which electrically comes in contact with each of the source electrode and the drain electrode. At least one between the source pad and the drain pad is able to have a structure in which at least one part is inserted inside an electrode which electrically comes in contact with at least one of the source pad and the drain pad.

Abstract translation: 公开了一种高电子迁移率晶体管（HEMT）及其制造方法。 所公开的HEMT包括：信道层; 形成在沟道层上的沟道供给层; 形成在沟道层或沟道供给层上的源电极和漏极; 设置在源电极和漏电极之间的栅电极; 以及源极焊盘和漏极焊盘，其与源极电极和漏极电极中的每一个电接触。 源极焊盘和漏极焊盘之间的至少一个能够具有这样的结构，其中至少一个部分被插入到与源极焊盘和漏极焊盘中的至少一个电接触的电极内部。

公开(公告)号：KR1020110018104A

公开(公告)日：2011-02-23

申请号：KR1020090075732

申请日：2009-08-17

Applicant: 삼성전자주식회사

Inventor： 안정착 ,  이경호 ,  하마미샤이 ,  박영환

IPC: H04N5/335

CPC classification number: H01L27/14609 ,  H04N5/3597 ,  H04N5/363 ,  H04N5/37452

Abstract: PURPOSE: A unit pixel, a pixel array and an optical sensing device equipped with the pixel array for boosting a floating diffusion area are provided to maximize the initialization of a floating diffusion area. CONSTITUTION: A pixel area equips a pixel. A unit pixel equips a boosting capacitor for boosting a floating diffusion area. An optical sensing device includes a photoelectro transform unit(PD). A transfer transistor(M1) transfers electric charge which generated from the photoelectro transform unit to the floating diffusion area. A reset transistor initializes the floating diffusion area. One terminal is connected to the floating diffusion area.

Abstract translation: 目的：设置单位像素，像素阵列和配备有用于升高浮动扩散区域的像素阵列的光学感测装置，以使浮动扩散区域的初始化最大化。 构成：像素区域装备像素。 单位像素配备用于升高浮动扩散区域的升压电容器。 光学感测装置包括光电转换单元（PD）。 转移晶体管（M1）将从光电转换单元产生的电荷转移到浮动扩散区域。 复位晶体管初始化浮动扩散区域。 一个端子连接到浮动扩散区域。

公开(公告)号：KR1020010025858A

公开(公告)日：2001-04-06

申请号：KR1019990036907

申请日：1999-09-01

Applicant: 삼성전자주식회사

Inventor： 박영환 ,  최성필

IPC: G06Q50/04 ,  G06K9/00 ,  G06Q10/06

CPC classification number: Y02P90/30

Abstract: PURPOSE: A material management system and method is provided to read bar codes of materials before putting the materials into semiconductor production lines, compare the read bar code data with the data stored in advance, and generate an alarm if the compared result is not identical so that it can prevent a wrong processing. CONSTITUTION: The method comprises steps of reading manufacturing data from bar codes adhered to materials put into a production process line or a supply equipment(S100), reading data from bar codes adhered to a target and a vessel(S102), a bar code data management computer determining if the bar code data is read, and storing the read bar code data in a database(S104, S106), the computer searching for a corresponding bar code data for a table in relation with the read bar code data, and comparing the searched data with the read data(S110), and generating an interlock signal and an alarm signal if the searched data is not to the read data(S120).

Abstract translation: 目的：提供材料管理系统和方法，将材料放入半导体生产线之前读取条形码，将读取的条形码数据与预先存储的数据进行比较，如果比较结果不相同，则产生报警 它可以防止错误的处理。 规定：该方法包括以下步骤：从附加到生产线中的材料的条形码或供应设备读取制造数据（S100），从粘附到目标和船只的条形码读取数据（S102），条形码数据 管理计算机确定是否读取条形码数据，并将读取的条形码数据存储在数据库中（S104，S106），计算机搜索与读取的条形码数据相关的表格的相应条形码数据，以及比较 （S110）的搜索数据，如果搜索到的数据不是读取数据，则产生互锁信号和报警信号（S120）。

公开(公告)号：KR1019990080029A

公开(公告)日：1999-11-05

申请号：KR1019980012983

申请日：1998-04-11

Applicant: 삼성전자주식회사

Inventor： 박영환 ,  최성필

IPC: G06F17/40

Abstract: 본 발명은 반도체 디바이스 제조용 원부자재의 데이터 관리 시스템 및 이를 이용한 원부자재의 데이터 관리 방법에 관한 것으로, 공정설비 및 공급설비에 투입되는 원부자재의 바코드를 리딩하고, 이에 대한 바코드리딩데이터를 데이터 베이스에 저장 관리함으로서 종래에 원부자재의 데이터를 수기록하거나 키보드를 통해 저장 관리하는 것보다 더 정확하고 신속하여 작업효율의 향상을 기대할 수 있다.