公开(公告)号：KR1020110029217A

公开(公告)日：2011-03-23

申请号：KR1020090086789

申请日：2009-09-15

Applicant: 삼성전자주식회사

Inventor： 김범석 ,  안정착 ,  정태섭

IPC: H04N9/07 ,  H04N9/04 ,  H04N5/3745 ,  H04N5/378

CPC classification number: H04N5/378 ,  H04N5/3745 ,  H04N9/045 ,  H04N9/07 ,  H04N5/37455

Abstract: PURPOSE: An image sensor for outputting RGB bayer signals through internal conversion, and an image processing apparatus including the same are provided to enable the compatibility with a universal ISP(Image signal Processor) without an additional compatibility device. CONSTITUTION: A pixel array(111) comprises plural pixels including RGB bayer pattern, and an analog-digital converter(114) converts an analog pixel signal outputted from each pixel into a digital pixel signal. An RGB converter(115) converts the digital pixel signal into the RGB bayer signal. The first row line signal of the RGB bayer signal indicates R and G pixel signals which alternatively appear.

Abstract translation: 目的：提供一种用于通过内部转换输出RGB拜耳信号的图像传感器，以及包括该图像处理设备的图像处理设备，以使得能够与通用ISP（图像信号处理器）兼容，而不需要额外的兼容性设备。 构成：像素阵列（111）包括包括RGB拜耳图案的多个像素，并且模拟数字转换器（114）将从每个像素输出的模拟像素信号转换为数字像素信号。 RGB转换器（115）将数字像素信号转换成RGB拜耳信号。 RGB拜耳信号的第一行行信号指示可替代地出现的R和G像素信号。

公开(公告)号：KR1020110016078A

公开(公告)日：2011-02-17

申请号：KR1020090073591

申请日：2009-08-11

Applicant: 삼성전자주식회사

Inventor： 이경호 ,  안정착 ,  장동윤 ,  이욱 ,  정태섭

IPC: H01L27/146

CPC classification number: H04N9/045 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14687

Abstract: PURPOSE: An image sensor is provided to improve image quality by restraining crosstalk without the deterioration of a ratio of an optical sensing area to an overall area of the image sensor. CONSTITUTION: A plurality of optical detecting devices(121, 122, 123) generates an electric signal corresponding to incident light. An insulating layer(140) is formed on the back side(110b) of a semiconductor substrate(110). The insulating layer comprises a plurality of light blocking area(141a, 142a) formed on an area between a plurality of optical detecting devices.

Abstract translation: 目的：提供一种图像传感器，通过抑制串扰来提高图像质量，而不会使光学感测区域与图像传感器的整个区域的比例变差。 构成：多个光学检测装置（121,122,123）产生对应于入射光的电信号。 绝缘层（140）形成在半导体衬底（110）的背面（110b）上。 绝缘层包括形成在多个光学检测装置之间的区域上的多个遮光区域（141a，142a）。

公开(公告)号：KR1020110006811A

公开(公告)日：2011-01-21

申请号：KR1020090064372

申请日：2009-07-15

Applicant: 삼성전자주식회사

Inventor： 정태섭 ,  김범석 ,  안정착 ,  김진학

IPC: G02B5/20 ,  G02F1/1335

CPC classification number: H01L27/14621 ,  G02F1/133514 ,  G02F2201/52 ,  H01L27/14609

Abstract: PURPOSE: A color filter array, an image sensor including the same, and electric device including the same are provided to increase the brightness of emitted light by increasing the sensitivity of an incident ray. CONSTITUTION: A first layer comprises a first type color filter, a second type color filter, a first type color filter, and a third type color filter. The second layer comprises a second type color filter, a fourth type color filter, a third type color filter, and a fourth type color filter. A third layer comprises a first type color filter, a third type color filter, a first type color filter, and a second type color filter. A fourth layer comprises a third type color filter, a forth type color filter, a second type color filter, and a fourth type color filter.

Abstract translation: 目的：提供一种滤色器阵列，包括该滤色器阵列的图像传感器和包括该彩色滤光片阵列的电气装置，以通过增加入射光线的灵敏度来增加发射光的亮度。 构成：第一层包括第一类型滤色器，第二类型滤色器，第一类型滤色器和第三类型滤色器。 第二层包括第二类型滤色器，第四类型滤色器，第三类型滤色器和第四类型滤色器。 第三层包括第一类型滤色器，第三类型滤色器，第一类型滤色器和第二类型滤色器。 第四层包括第三类型滤色器，第四类型滤色器，第二类型滤色器和第四类型滤色器。

公开(公告)号：KR1020100064699A

公开(公告)日：2010-06-15

申请号：KR1020080123256

申请日：2008-12-05

Applicant: 삼성전자주식회사

Inventor： 이용제 ,  안정착 ,  박종은 ,  장동윤

IPC: H01L27/146

CPC classification number: H04N5/361 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643

Abstract: PURPOSE: An image sensor of a rear illumination structure is provided to supply a clear image by suppressing a blooming phenomenon between photoelectric conversion elements. CONSTITUTION: A substrate(14) comprises a plurality of photoelectric conversion elements(15) which is respectively separated with the semiconductor material with a first type. A transparent electrode layer(13) is formed on the substrate. A positive or negative bias voltage is applied to the transparent electrode layer.

Abstract translation: 目的：提供后照明结构的图像传感器，以通过抑制光电转换元件之间的起霜现象来提供清晰的图像。 构成：衬底（14）包括分别与第一类型的半导体材料分开的多个光电转换元件（15）。 在基板上形成透明电极层（13）。 向透明电极层施加正或负偏压。

公开(公告)号：KR1020100063392A

公开(公告)日：2010-06-11

申请号：KR1020080121895

申请日：2008-12-03

Applicant: 삼성전자주식회사

Inventor： 이용제 ,  안정착 ,  박종은

IPC: H01L27/146 ,  H01L27/148

CPC classification number: H01L27/14636 ,  H01L27/14632 ,  H01L27/14634

Abstract: PURPOSE: An image sensor and an image sensing system including the same are provided to supply a drive power through a plurality of routes by inputting the drive power applied from outside to a connection pad of the image sensor through a pad area and a circuit area. CONSTITUTION: A pixel array is formed on a pixel area of a semiconductor substrate. The pixel array includes a plurality of photoelectron transform part(110). A driving part is formed on the circuit area of the semiconductor substrate. The driving part includes a plurality of driving circuits(201). A contact pad(301) is extended from a pad area of the semiconductor substrate to the circuit area. The contact pad is connected with the outside and provided a drive power.

Abstract translation: 目的：提供一种图像传感器和包括该图像传感器的图像感测系统，以通过焊盘区域和电路区域将从外部施加的驱动电力输入到图像传感器的连接焊盘来通过多条路径提供驱动电力。 构成：像素阵列形成在半导体衬底的像素区域上。 像素阵列包括多个光电子变换部分（110）。 驱动部分形成在半导体衬底的电路区域上。 驱动部包括多个驱动电路（201）。 接触焊盘（301）从半导体衬底的焊盘区域延伸到电路区域。 接触垫与外部连接并提供驱动电源。

公开(公告)号：KR1020100062099A

公开(公告)日：2010-06-10

申请号：KR1020080120534

申请日：2008-12-01

Applicant: 삼성전자주식회사

Inventor： 박종은 ,  안정착 ,  이용제 ,  장동윤

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L27/1461 ,  H01L27/1463 ,  H01L27/14683 ,  H04N5/3741

Abstract: PURPOSE: An image sensor and a manufacturing method thereof are provided to offer a clear image by eliminating the dark current generating on the surface of silicon or the well region of the top of the photo diode. CONSTITUTION: A plurality of photo diodes(1, 1a, 1b) is prepared. A plurality of wells(5, 5a, 5b, 5c) insulates intervals between the photo diodes. A plurality of barrier metals receives a bias voltage. The metal layer is formed on the lower part of the corresponding photo diode among the photo diodes. The oxide film is formed on the lower part of the well according to the STI(Shallow Trench Insulation) process.

Abstract translation: 目的：提供一种图像传感器及其制造方法，通过消除在硅表面或光二极管的顶部的阱区域产生的暗电流来提供清晰的图像。 构成：制备多个光电二极管（1,1a，1b）。 多个孔（5,5a，5b，5c）绝缘光电二极管之间的间隔。 多个势垒金属接收偏置电压。 金属层形成在光电二极管中相应的光电二极管的下部。 根据STI（浅沟槽绝缘）工艺，氧化膜形成在阱的下部。

公开(公告)号：KR1020090125499A

公开(公告)日：2009-12-07

申请号：KR1020080051641

申请日：2008-06-02

Applicant: 삼성전자주식회사

Inventor： 박종은 ,  안정착 ,  이용제 ,  장동윤

IPC: H04N5/374

CPC classification number: H01L27/1463 ,  H01L27/14603 ,  H01L27/14641

Abstract: PURPOSE: A CMOS image sensor and a driving method thereof are provided to increase the electric potential difference between a light receiving element and a detecting element by reduction of surround electric potential of the light receiving element when transferring electric charges. CONSTITUTION: A light receiving element(110) accumulates photo electric charges. An electric charge transfer element(130) controls transmission of the photo electric charges accumulated with the light receiving element. A detecting element(120) detects the photo electric charges transmitted with the electric charge transfer element. A well driving contact(107) is arranged to increase the electric potential difference between the light receiving element and the detecting element when transferring the photo electric charges.

Abstract translation: 目的：提供一种CMOS图像传感器及其驱动方法，通过在传送电荷时减少光接收元件的环绕电位来增加受光元件与检测元件之间的电位差。 构成：光接收元件（110）累积光电荷。 电荷转移元件（130）控制由光接收元件蓄积的光电荷的透过。 检测元件（120）检测用电荷转移元件发送的光电荷。 布置良好的驱动触点（107）以在传送光电荷时增加光接收元件和检测元件之间的电位差。

公开(公告)号：KR1020090088044A

公开(公告)日：2009-08-19

申请号：KR1020080013346

申请日：2008-02-14

Applicant: 삼성전자주식회사

Inventor： 문경식 ,  안정착 ,  임무섭 ,  최성호 ,  이강선

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L21/26533 ,  H01L27/14629 ,  H01L27/14689

Abstract: An image sensor and method for fabricating the same is provided to increase the sensitivity of the image sensor in the magnetism pixel by blocking the light from is incident to the adjacent pixel. The active region between the gate of the gate(120) of the transfer transistor and the reset transistor comprise the floating diffusion region. The photo diode is surrounded by the device isolation region(210, 212) having the recess region(214). The high concentration p-type impurity region is formed near the device isolation region. The dark current's generation is suppressed by the high concentration p-type impurity region. The floating diffusion region stores the electric charge delivered from the photo diode. The power supply terminal is connected in the source of the reset transistor.

Abstract translation: 提供了一种图像传感器及其制造方法，以通过阻挡入射到相邻像素的光来增加图像传感器在磁性像素中的灵敏度。 传输晶体管的栅极（120）的栅极与复位晶体管之间的有源区域包括浮动扩散区域。 光电二极管由具有凹陷区域（214）的器件隔离区域（210,212）包围。 在器件隔离区附近形成高浓度p型杂质区。 暗电流的产生被高浓度p型杂质区抑制。 浮动扩散区域存储从光电二极管传递的电荷。 电源端子连接在复位晶体管的源极中。

公开(公告)号：KR100833605B1

公开(公告)日：2008-05-30

申请号：KR1020070009309

申请日：2007-01-30

Applicant: 삼성전자주식회사

Inventor： 이경호 ,  김이태 ,  안정착

IPC: H01L27/146

CPC classification number: H01L27/14603 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14689 ,  H01L29/1054

Abstract: A CMOS image sensor and a manufacturing method of the same are provided to reduce flicker noise by modifying an energy band structure of a channel region. A CMOS image sensor includes a light sensing element and a drive transistor(168). The drive transistor includes a drive gate(167) on a semiconductor substrate(105) and a channel region within the semiconductor substrate under the drive gate. The channel region is used for forming a buried channel with an impurity implantation region of a stacked structure to obtain a band offset value in a conductive band by modifying an energy band structure of the channel region with a heterojunction. The channel region includes the impurity implantation region having a Si/SiGe/SiGeC/SiGe stacked structure.

Abstract translation: 提供CMOS图像传感器及其制造方法，以通过修改通道区域的能带结构来减少闪烁噪声。 CMOS图像传感器包括光感测元件和驱动晶体管（168）。 驱动晶体管包括在半导体衬底（105）上的驱动栅极（167）和位于驱动栅极下方的半导体衬底内的沟道区域。 通道区域用于形成具有层叠结构的杂质注入区域的掩埋沟道，以通过用异质结修改沟道区的能带结构来获得导电带中的带偏移值。 沟道区包括具有Si / SiGe / SiGeC / SiGe堆叠结构的杂质注入区。

公开(公告)号：KR100808950B1

公开(公告)日：2008-03-04

申请号：KR1020070009310

申请日：2007-01-30

Applicant: 삼성전자주식회사

Inventor： 이경호 ,  김이태 ,  안정착 ,  김세영

IPC: H01L27/146

CPC classification number: H01L27/14609 ,  H01L27/14603 ,  H01L27/14689 ,  H01L31/035281

Abstract: A CMOS image sensor and a manufacturing method thereof are provided to reduce a dark current and to improve an image lag by separately forming a pocket photo diode related to a main photo diode and a charge transfer. A transfer transistor(Tx) has a transfer gate(132) on a first conductive-type semiconductor substrate(100) and a channel region(112). The channel region has a first conductive-type impurity ion implantation layer located in the semiconductor substrate at a lower portion of the transfer gate. A photo diode includes a second conductive-type main photo diode(140) in the semiconductor substrate and a second conductive-type pocket photo diode(142). The second conductive-type pocket photo diode is located between the channel region and the main photo diode. The channel region includes a second conductive-type impurity ion implantation layer at a lower portion of the first conductive-type impurity ion implantation layer. A first conductive-type diffusion layer(144) is formed on a surface of the main photo diode.

Abstract translation: 提供一种CMOS图像传感器及其制造方法，以通过分开形成与主光电二极管相关的袋式光电二极管和电荷转移来减少暗电流并改善图像滞后。 传输晶体管（Tx）在第一导电型半导体衬底（100）和沟道区（112）上具有传输栅极（132）。 沟道区具有在传输栅极的下部位于半导体衬底中的第一导电型杂质离子注入层。 光电二极管包括半导体衬底中的第二导电型主光电二极管（140）和第二导电类型的光电二极管（142）。 第二导电型袋式光电二极管位于通道区域和主光电二极管之间。 沟道区域包括在第一导电型杂质离子注入层的下部的第二导电型杂质离子注入层。 在主光电二极管的表面上形成第一导电型扩散层（144）。