전해이온수 생성장치 및 반도체 소자의 세정방법
    61.
    发明公开
    전해이온수 생성장치 및 반도체 소자의 세정방법 失效
    用于产生电解离子水的装置和用于清洁半导体器件的方法

    公开(公告)号:KR1020020030410A

    公开(公告)日:2002-04-25

    申请号:KR1020000061026

    申请日:2000-10-17

    Abstract: PURPOSE: An apparatus for generating electrolyzed ionic water is to provide a cleaning process not affected by metal ions inherent in the electrolyzed ionic water, by installing a detector for detecting the density of metal ions and a controller for preventing the electrolyzed ionic water from being supplied to a cleaning apparatus when the density of the metal ions exceeds a predetermined quantity. CONSTITUTION: The apparatus for generating electrolyzed ionic water individually generates and exhausts reductive electrolyzed ionic water and oxidative electrolyzed ionic water. A withdrawing part(210) withdraws a part of the electrolyzed ionic water exhausted from the electrolyzed ionic water generating apparatus and sends the electrolyzed ionic water to the detector(216). The detector detects the density of the metal ions inherent in the electrolyzed ionic water withdrawn from the withdrawing part. The controller(220) stops generation of the electrolyzed ionic water or prevents the electrolyzed ionic water from being supplied to the cleaning apparatus(214), connected to the detector.

    Abstract translation: 目的:一种用于产生电解离子水的设备是通过安装用于检测金属离子密度的检测器和用于防止电解离子水供应的控制器来提供不受电解离子水固有的金属离子影响的清洗过程 当金属离子的密度超过预定量时,到清洁装置。 构成:用于产生电解离子水的装置单独产生和排出还原电解离子水和氧化电解离子水。 取出部(210)从电解离子水生成装置排出的一部分电解离子水中取出并将电解离子水送到检测器(216)。 检测器检测从抽出部分抽出的电解离子水中固有的金属离子的密度。 控制器(220)停止生成电解离子水,或者防止电解离子水供给到与检测器连接的清洁装置(214)。

    산화성 물질을 포함하는 아노드 수 및/또는 환원성 물질을포함하는 캐소드 수를 사용하는 반도체 제조를 위한 습식공정 및 이 공정에 사용되는 아노드수 및/또는 캐소드수
    62.
    发明公开
    산화성 물질을 포함하는 아노드 수 및/또는 환원성 물질을포함하는 캐소드 수를 사용하는 반도체 제조를 위한 습식공정 및 이 공정에 사용되는 아노드수 및/또는 캐소드수 失效
    使用包含氧化物或阴极水的阳极水制造半导体的湿蚀刻工艺,包括减少和阳极水和阴极水用于其中

    公开(公告)号:KR1020020019675A

    公开(公告)日:2002-03-13

    申请号:KR1020000052661

    申请日:2000-09-06

    Abstract: PURPOSE: A wet etch process for fabricating a semiconductor using anode water including an oxide or cathode water including a reductant and anode water and cathode water used for the same are provided to produce anode water including an oxide and cathode water including a reductant by using the small amount of electrolyte. CONSTITUTION: An electrolytic device(1) has an anode room(30), a cathode room(40), and an intermediate room(50). The anode room(30), the cathode room(40), and the intermediate room(50) are separated by ion-exchange films(10,20). The ion-exchange film(10) is installed in the anode room(30). The ion-exchange film(10) is formed with a negative ion-exchange film(10a) and a fluoric positive ion-exchange film(10b). The ion-exchange film(20) is installed in the cathode room(40). The ion-exchange film(20) is formed with a positive ion-exchange film(20a) and a negative ion-exchange film(20b). Pin holes are formed uniformly on the fluoric positive ion-exchange film(10b) and the negative ion-exchange film(20b). An anode electrode(60) and a cathode electrode(70) are installed in the cathode room(40). Ionized water is supplied to the anode room(30) and the cathode room(40) through the first and the second injection tubes(80,90). An electrolyte is supplied to the intermediate room(50) through the third injection tube(100). Anode water including an oxide is supplied to the first wet process device(150). Cathode water including a reductant is supplied to the second wet process device(160).

    Abstract translation: 目的:提供一种用于制造半导体的湿式蚀刻工艺,该方法使用包括还原剂和阳极水和阴极水的氧化物或阴极水的阳极水,该氧化物或阴极水用于生产含有氧化物和阴极水的阳极水,所述氧化物和阴极水通过使用还原剂 少量电解液。 构成:电解装置(1)具有阳极室(30),阴极室(40)和中间室(50)。 阳极室(30),阴极室(40)和中间室(50)由离子交换膜(10,20)分离。 离子交换膜(10)安装在阳极室(30)中。 离子交换膜(10)由负离子交换膜(10a)和氟正离子交换膜(10b)形成。 离子交换膜(20)安装在阴极室(40)中。 离子交换膜(20)由正离子交换膜(20a)和负离子交换膜(20b)形成。 针孔在氟正离子交换膜(10b)和负离子交换膜(20b)上均匀地形成。 阳极电极(60)和阴极电极(70)安装在阴极室(40)中。 离子水通过第一和第二注入管(80,90)供应到阳极室(30)和阴极室(40)。 通过第三注入管(100)向中间室(50)供给电解质。 将包含氧化物的阳极水供给到第一湿式处理装置(150)。 包含还原剂的阴极水被供应到第二湿法处理装置(160)。

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