公开(公告)号：KR1020140026824A

公开(公告)日：2014-03-06

申请号：KR1020120092504

申请日：2012-08-23

Applicant: 주성엔지니어링(주)

Inventor： 한정훈 ,  김영훈 ,  황철주

IPC: H01L21/205

CPC classification number: C23C16/455 ,  C23C16/45536 ,  C23C16/45551 ,  C23C16/45574 ,  C23C16/458 ,  C23C16/4584 ,  C23C16/50 ,  H01L21/68764 ,  H01L21/68771

Abstract: The present invention relates to a device and method for processing a substrate capable of equalizing membranous characteristics of a thin film deposited on the substrate and facilitating the membranous control of the thin film. The device for processing a substrate according to the present invention comprises: a process chamber having a process space; a chamber lid for covering the top of the process chamber; a substrate support unit installed in the process chamber for supporting and moving at least one substrate; a source gas injection unit installed on the chamber lid for injecting the source gas in a source gas injection area defined on the substrate support unit; a reaction gas injection unit installed on the chamber lid for injecting reaction gas on a reaction gas injection area defined on the substrate support unit; and a purge gas injection unit installed on the chamber lid for injecting the purge gas in a purge gas injection area defined between the source gas injection area and the reaction gas injection area. The distance between the purge gas injection unit and the substrate is closer than the distance between the substrate, and the source gas injection unit and the reaction gas injection unit respectively.

Abstract translation: 本发明涉及一种用于处理基板的装置和方法，该基板能够均衡沉积在基板上的薄膜的膜特性，并且有利于膜薄膜的控制。 根据本发明的用于处理基板的装置包括：具有处理空间的处理室; 用于覆盖处理室的顶部的室盖; 安装在所述处理室中用于支撑和移动至少一个基板的基板支撑单元; 源气体注入单元，安装在所述室盖上，用于将源气体注入到限定在所述基板支撑单元上的源气体注入区域中; 反应气体注入单元，安装在所述室盖上，用于将反应气体注入到限定在所述基板支撑单元上的反应气体注入区域上; 以及安装在所述室盖上的吹扫气体注入单元，用于将所述吹扫气体注入在所述源气体喷射区域和所述反应气体喷射区域之间限定的吹扫气体喷射区域中。 吹扫气体注入单元和基板之间的距离分别比基板和源气体注入单元和反应气体注入单元之间的距离更近。

公开(公告)号：KR1020130141409A

公开(公告)日：2013-12-26

申请号：KR1020130134833

申请日：2013-11-07

Applicant: 주성엔지니어링(주)

Inventor： 허승회 ,  한정훈

IPC: H01L21/3065 ,  H01L21/205

CPC classification number: H01L21/3065 ,  H01L21/02 ,  H01L21/0273 ,  H01L21/203 ,  H01L21/205 ,  H01L21/302 ,  H01L21/30621 ,  H01L21/31116 ,  H01L21/76825 ,  H01L21/76826

Abstract: The present invention relates to a substrate processing apparatus capable of easily controlling the layer quality of a thin film and improving the uniformity by separating a plasma space from a source gas injection space and a substrate processing method. According to the present invention, the substrate processing apparatus includes a process chamber; a substrate support part supporting a substrate in a chamber; a plasma formation space for injecting plasma onto the substrate; a source gas injection space for injecting a source gas; and a space formation member for preparing the source gas injection space and the plasma formation space and formed on the upper part of the process chamber.

Abstract translation: 本发明涉及一种能够容易地控制薄膜的层质量并通过从源气体注入空间分离等离子体空间和基板处理方法来提高均匀性的基板处理装置。 根据本发明，基板处理装置包括处理室; 支撑室中的基板的基板支撑部; 用于将等离子体注入到所述衬底上的等离子体形成空间; 用于喷射源气体的源气体注入空间; 以及用于制备源气体注入空间和等离子体形成空间并形成在处理室的上部的空间形成构件。

公开(公告)号：KR1020130097430A

公开(公告)日：2013-09-03

申请号：KR1020120019070

申请日：2012-02-24

Applicant: 주성엔지니어링(주)

Inventor： 이상돈 ,  한정훈

IPC: H01L21/205

Abstract: PURPOSE: An apparatus for processing a substrate and a method for processing the substrate using the same are provided to increase the deposition uniformity of a thin film by spatially separating a reaction gas from a source gas sprayed on a substrate. CONSTITUTION: A substrate support part (120) is installed in a process chamber. The substrate support part supports at least one substrate. A chamber lid (115) covers the upper part of the process chamber to face the substrate support part. A gas injection part (130) has gas injection modules. The gas injection modules locally inject a gas supplied to a gas injection space onto the substrate support part.

Abstract translation: 目的：提供一种用于处理基板的设备和使用其的处理基板的方法，以通过将反应气体与喷射在基板上的源气体进行空间分离来提高薄膜的沉积均匀性。 构成：衬底支撑部分（120）安装在处理室中。 衬底支撑部分支撑至少一个衬底。 室盖（115）覆盖处理室的上部以面对基板支撑部分。 气体注入部（130）具有气体注入模块。 气体注入模块将供应到气体注入空间的气体局部地注入到基板支撑部分上。

公开(公告)号：KR1020130015677A

公开(公告)日：2013-02-14

申请号：KR1020110077803

申请日：2011-08-04

Applicant: 주성엔지니어링(주)

Inventor： 김영훈 ,  한정훈

IPC: C23C16/44 ,  C23C16/50 ,  H01L21/205

CPC classification number: C23C16/4586 ,  C23C16/345 ,  C23C16/401 ,  C23C16/46 ,  C23C16/509

Abstract: PURPOSE: A depositing apparatus and method for a passivation layer or an insulating layer on a substrate are provided to deposit the passivation layer or the insulating layer, which has an excellent film quality, on the substrate with a low temperature process. CONSTITUTION: A depositing apparatus(1000) for a passivation layer or an insulating layer on a substrate(S) comprises a vacuum chamber(100), an ICP(Inductively Coupled Plasma) source(200), an ESC(Electro Static Chuck)(300), and a controller. The substrate is accommodated in the vacuum chamber. A depositing process for the passivation layer or the insulating layer is implemented in the vacuum chamber. The ICP source is installed at the vacuum chamber. The ESC is installed at lower portion inside the vacuum chamber, and fixes the substrate inside the vacuum chamber. The controller controls the ICP source and the ESC. The ESC includes an upper body(310) and a lower body(330). The upper body is equipped with a first temperature controller which controls the temperature of the substrate settled on the upper surface of the upper body. The lower body is equipped with a second temperature controller which controls the temperature of the ESC.

Abstract translation: 目的：提供一种用于衬底上的钝化层或绝缘层的沉积设备和方法，以在低温工艺的基板上沉积具有优良膜质量的钝化层或绝缘层。 构成：用于钝化层或基板（S）上的绝缘层的沉积装置（1000）包括真空室（100），ICP（感应耦合等离子体）源（200），ESC（静电卡盘） 300）和控制器。 基板容纳在真空室中。 在真空室中实现钝化层或绝缘层的沉积工艺。 ICP源安装在真空室。 ESC安装在真空室内的下部，并将基板固定在真空室内。 控制器控制ICP源和ESC。 ESC包括上主体（310）和下主体（330）。 上身配备有第一温度控制器，其控制沉积在上身的上表面上的基底的温度。 下部装有一个控制ESC温度的第二个温度控制器。

公开(公告)号：KR1020070119416A

公开(公告)日：2007-12-20

申请号：KR1020060054032

申请日：2006-06-15

Applicant: 주성엔지니어링(주)

Inventor： 한정훈 ,  손종원 ,  유진혁

IPC: H01L21/205

CPC classification number: H01L21/76837 ,  C23C16/455 ,  C23C16/513 ,  H01L21/76224

Abstract: A gap-fill method using pulsed RF(radio frequency) power is provided to exhaust the byproducts generated from deposition and etch processes to the outside of a gap periodically by periodically adjusting the energy and partial pressure of ions incident upon the opening of the gap. A substrate having a gap is placed on a substrate placement table(12) in a chamber(11). Non-reactive gas is supplied to the inside of the chamber, and source RF power is applied to generate plasma in a reaction space over the substrate. Process gas for deposition is supplied to the reaction space, and bias RF power is transformed into pulsed RF to be applied to the substrate placement table. The supply of the process gas and the application of the bias RF power are stopped. The plasma in the reaction space is extinguished. The bias RF power is applied as pulsed RF to the substrate placement table until a deposit is filled in the gap by the process gas for deposition.

Abstract translation: 提供使用脉冲RF（射频）功率的间隙填充方法，通过周期性地调节入射到间隙开口处的离子的能量和分压，将从沉积和蚀刻工艺产生的副产物周期性地排出到间隙的外部。 具有间隙的基板被放置在室（11）中的基板放置台（12）上。 非反应性气体被供应到室的内部，并且施加源RF功率以在衬底上的反应空间中产生等离子体。 用于沉积的工艺气体被供应到反应空间，并且偏压RF功率被转换成脉冲RF以施加到衬底放置台。 停止供给工艺气体和施加偏压RF功率。 反应空间中的等离子体熄灭。 将偏压RF功率作为脉冲RF施加到衬底放置台，直到通过用于沉积的工艺气体在间隙中填充沉积物。

公开(公告)号：KR1020050000217A

公开(公告)日：2005-01-03

申请号：KR1020030040819

申请日：2003-06-23

Applicant: 주성엔지니어링(주)

Inventor： 한정훈 ,  황철주

IPC: H01L21/205

Abstract: PURPOSE: A gap-filling method in an HDPCVD(High Density Plasma Chemical Vapor Deposition) apparatus is provided to improve etching-rate even with a small amount of etchant under a low RF(Radio Frequency) power supply condition by using a fluorocarbon gas as the etchant. CONSTITUTION: In an HDPCVD apparatus, an insulating layer for filling a gap is deposited on a predetermined semiconductor structure. An etching process is simultaneously performed on the insulating layer by using a fluorocarbon gas. The fluorocarbon gas is C3F8. The insulating layer is made of a silicon oxide layer.

Abstract translation: 目的：提供HDPCVD（高密度等离子体化学气相沉积）装置中的间隙填充方法，即使在低RF（射频）电源条件下使用少量蚀刻剂，通过使用碳氟化合物气体作为 蚀刻剂 构成：在HDPCVD装置中，用于填充间隙的绝缘层沉积在预定的半导体结构上。 通过使用碳氟化合物气体在绝缘层上同时进行蚀刻工艺。 碳氟化合物气体为C3F8。 绝缘层由氧化硅层制成。

公开(公告)号：KR102046391B1

公开(公告)日：2019-11-19

申请号：KR1020180158419

申请日：2018-12-10

Applicant: 주성엔지니어링(주)

Inventor： 한정훈 ,  최규진

IPC: H01L21/02 ,  H01L21/67 ,  C23C16/455

公开(公告)号：KR101987138B1

公开(公告)日：2019-06-10

申请号：KR1020120057045

申请日：2012-05-30

Applicant: 주성엔지니어링(주)

Inventor： 황철주 ,  한정훈 ,  서승훈

IPC: C23C16/455 ,  C23C16/509 ,  H01L31/18

公开(公告)号：KR101725765B1

公开(公告)日：2017-04-12

申请号：KR1020100091752

申请日：2010-09-17

Applicant: 주성엔지니어링(주)

Inventor： 강승모 ,  한정훈 ,  유경한 ,  이주호

IPC: H01L21/02 ,  H01L21/768

Abstract: 본발명은산화막증착방법및 이를이용한비아콘택형성방법에관한것으로, 종횡비(종:횡)가 1:3 이상의콘택홀을갖는피증착물을마련하는단계및 상기피증착물의상기콘택홀의내측면에산화막을형성하는단계를포함하되, 상기산화막은 25 내지 200도의온도의챔버내에염소함유실리콘소스와반응물질을공급하여증착하되, 85%이상의스텝커버리지특성과, 150Å/min 이상의증착율을갖는산화막증착방법및 이를이용한비아콘택형성방법을제공한다. 이와같이 200도이하의저온에서기화된액상의염소(Chlorine)가함유된실리콘원료물질과액상의반응물질을이용한화학기상증착법을통해 150Å/min이상의높은증착율과 85%이상의우수한스텝커버리지특성을갖는산화막을증착할수 있다.

公开(公告)号：KR1020140006505A

公开(公告)日：2014-01-16

申请号：KR1020120073591

申请日：2012-07-06

Applicant: 주성엔지니어링(주)

Inventor： 한정훈 ,  황철주 ,  김도형 ,  서승훈

IPC: H01L21/205

CPC classification number: H01J37/32449 ,  C23C16/509 ,  H01J37/32541 ,  H01J37/32568

Abstract: The present invention relates to a substrate processing device including a process chamber, a substrate support part installed in the chamber to support one or more substrates and rotating in a predetermined direction, a chamber lead covering the process chamber while facing the substrate support part, and a gas spray part including a plurality of gas spray modules spraying gas to the substrate. The gas spray modules includes a ground electrode frame forming a plasma reaction space and a power electrode generating plasma discharge with the ground electrode frame by being formed in the frame. A first side of a central part of the substrate support part is higher than a second side of a border part of the substrate support part. [Reference numerals] (AA) Central part of a substrate support part; (BB) Border part of the substrate support part

Abstract translation: 本发明涉及一种基板处理装置，其包括处理室，安装在所述室中的基板支撑部分，用于支撑一个或多个基板并沿预定方向旋转;腔室引线，其覆盖处理室，同时面向基板支撑部分;以及 气体喷射部分，其包括将气体喷射到基底的多个气体喷射模块。 气体喷射模块包括形成等离子体反应空间的接地电极框架和通过形成在框架中而与接地电极框架产生等离子体放电的电力电极。 基板支撑部分的中心部分的第一侧高于基板支撑部分的边界部分的第二侧。 （附图标记）（AA）基板支撑部的中央部; （BB）衬底支撑部分的边界部分