公开(公告)号：KR1020080032889A

公开(公告)日：2008-04-16

申请号：KR1020060098977

申请日：2006-10-11

Applicant: 한국광기술원

Inventor： 오화섭 ,  이진홍 ,  김강호 ,  이승재 ,  백종협 ,  유영문 ,  김상묵 ,  이상헌 ,  김윤석 ,  진정근 ,  염홍서

IPC: H01L33/06

Abstract: A light emitting device having an increased effective active area and a method for manufacturing the same are provided to obtain operational characteristics and high optical efficiency by changing growth conditions in a stacking process. A first clad layer(22), an active layer(23), a second clad layer(24), and an electrode layer is formed sequentially on a substrate(20). An upper contact area and a lower contact area of the active layer are increased in comparison with an effective contact area between other layers. A buffer layer and a DBR(Distributed Bragg Reflector) layer(21) are additionally formed between the substrate and the first clad layer. A window layer(25) is additionally formed between the second clad layer and the electrode layer.

Abstract translation: 提供具有增加的有效有效面积的发光器件及其制造方法，以通过改变堆叠处理中的生长条件来获得操作特性和高光学效率。 在基板（20）上依次形成第一包层（22），有源层（23），第二覆盖层（24）和电极层。 与其他层之间的有效接触面积相比，有源层的上接触面积和下接触面积增加。 在衬底和第一覆盖层之间另外形成缓冲层和DBR（分布式布拉格反射器）层（21）。 另外在第二覆盖层和电极层之间形成窗口层（25）。

公开(公告)号：KR1020070079956A

公开(公告)日：2007-08-08

申请号：KR1020070066709

申请日：2007-07-03

Applicant: 한국광기술원

Inventor： 유영문 ,  백종협 ,  김상묵 ,  진정근 ,  이상헌 ,  정탁 ,  이승재 ,  김윤석 ,  이진홍 ,  김강호 ,  오화섭 ,  염홍서

IPC: H01L33/36 ,  H01L33/44

Abstract: A chip scale packaged light emitting diode and its fabricating method are provided to obtain two individual light emitting elements by connecting an n type first electrode with an n type second electrode and separating chips from each other. A chip scale packaged light emitting diode includes a substrate(200) and n type and p type semiconductor layers(201,203) formed on the substrate. An n type first electrode(205) and a p type first electrode(204) are formed on the n type semiconductor layer and the p type semiconductor layer, respectively. A first protective layer is formed on the n type first electrode and the p type first electrode. An n type second electrode(210) and a p type second electrode(209) are electrically connected through the first protective layer to the n type first electrode and the p type first electrode.

Abstract translation: 提供了一种芯片级封装发光二极管及其制造方法，通过将n型第一电极与n型第二电极连接并将芯片彼此分离来获得两个单独的发光元件。 芯片级封装发光二极管包括基板（200）和形成在基板上的n型和p型半导体层（201,203）。 分别在n型半导体层和p型半导体层上形成n型第一电极（205）和p型第一电极（204）。 在n型第一电极和p型第一电极上形成第一保护层。 n型第二电极（210）和p型第二电极（209）通过第一保护层电连接到n型第一电极和p型第一电极。