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公开(公告)号：KR1020140030868A
公开(公告)日：2014-03-12
申请号：KR1020120097573
申请日：2012-09-04
Applicant: 한국전자통신연구원
CPC classification number: H01S3/10 , H01S3/10053 , H01S5/0085 , H01S5/02284 , H01S5/026 , H01S5/0265 , H01S5/141 , H01S5/142
Abstract: The present invention relates to a compact external cavity tunable laser apparatus which includes: a substrate; an external cavity tunable reflection part which reflects a laser beam coming from the outside on the substrate and changes and selects the wavelength of the reflected laser beam; an optical fiber part for outputting the laser beam on the substrate; and a high integration light source part which integrates the laser beam inputted from the external cavity tunable reflection part by using a tilt input and output waveguide and a curved waveguide and a straight waveguide in order to match the beam axis of the external cavity tunable reflection part with the beam axis of the optical fiber.
Abstract translation: 本发明涉及一种紧凑型外腔可调谐激光装置，其包括：基板; 将来自外部的激光束反射到基板上并改变并选择反射激光束的波长的外部可调谐反射部分; 用于将激光束输出到基板上的光纤部件; 以及通过使用倾斜输入和输出波导以及弯曲波导和直波导来整合从外部腔可调谐反射部分输入的激光束的高集成度光源部分，以便匹配外部腔体可调谐反射部分的光束轴线 与光纤的光束轴线。
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62.发明公开양방향 파장분할다중 광네트워크에서 하향 ＷＤＭ 광신호의 광출력과 파장을 제어 및 감시하는 광회선 종단 장치 无效用于控制和监测双向波分复用光网络中下行波分复用光信号的光功率和波长的光线终端
公开(公告)号：KR1020130101961A
公开(公告)日：2013-09-16
申请号：KR1020120072809
申请日：2012-07-04
Applicant: 한국전자통신연구원
IPC: H04J14/02 , H04B10/2507
CPC classification number: H04J14/0227 , H04B10/07 , H04B10/2503 , H04B10/2507 , H04B10/572
Abstract: PURPOSE: An optical line terminal (OLT) controlling and monitoring the optical power and wavelength of a downlink wavelength division multiplexing (WDM) optical signal in a bidirectional WDM optical network is provided to increase the quality of a monitoring system by fundamentally blocking the effect of signal distortion. CONSTITUTION: An optical transmitter generates a downlink WDM optical signal. A standard-type wavelength multiplexer multiplexes the wavelength of the downlink WDM optical signal. A circulation-type wavelength demultiplexer (160) demultiplexes the wavelength of the downlink WDM optical signal. An optical receiver (170) outputs a downlink electric signal. A signal processing module (180) controls the optical power and wavelength of a signal from the optical transmitter. [Reference numerals] (100) Central base station; (180) Signal processing module; (700) Remote node; (800) Value particle
Abstract translation: 目的：提供一种在双向WDM光网络中控制和监测下行波分复用（WDM）光信号的光功率和波长的光线路终端（OLT），以通过根本上阻止监控系统的效果来提高监控系统的质量 信号失真。 构成：光发射机产生下行WDM光信号。 标准型波长多路复用器复用下行链路WDM光信号的波长。 循环型波长解复用器（160）对下行链路WDM光信号的波长进行解复用。 光接收器（170）输出下行电信号。 信号处理模块（180）控制来自光发射机的信号的光功率和波长。 （附图标记）（100）中央基站; （180）信号处理模块; （700）远程节点; （800）价值粒子
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公开(公告)号：KR1020130071749A
公开(公告)日：2013-07-01
申请号：KR1020110139143
申请日：2011-12-21
Applicant: 한국전자통신연구원
IPC: H01S5/12
CPC classification number: H01S3/0675 , H01S5/0265 , H01S5/1231
Abstract: PURPOSE: A distribution feedback type laser diode in which an optical mode size convertor is monolithically intergrated and a production method are provided to increase coupling efficiency with an optical fiber by integrating SSC. CONSTITUTION: Number of layers is grown and the layers are composed of a substrate (1), InGaAsP grid layer (2), n-lnP space layer (3), an activated layer (4), P-lnP upper clad layer (5), an etching stoppage layer (6), and p-lnP cap layer (7). Part of the activated layer is etched and a butt layer is created. A tapered area is formed on the butt layer. Manual ridge wave guide layer is etched in a deep ride wave guide shape under the tapered area. A P clad layer (12) and an ohmic layer (13) are grown consecutively on a structure. The deep ridge wave guide buried in the tapered area is formed on the ohmic layer. Polyimide or polymer benzocyclobutene (BCB) is formed on an outer area of the deep ridge waveguide.
Abstract translation: 目的：一种分布反馈型激光二极管，其中光学模式尺寸转换器是单片集成的，并且提供了通过集成SSC来提高与光纤的耦合效率的制造方法。 构成：层数生长，层由衬底（1），InGaAsP栅格层（2），n-lnP空间层（3），活性层（4），P-lnP上覆层（5） ），蚀刻停止层（6）和p-lnP盖层（7）。 激活层的一部分被蚀刻并形成对接层。 在对接层上形成锥形区域。 手动脊波导层在锥形区域下以深行驶波导形状蚀刻。 P结构层（12）和欧姆层（13）在结构上连续生长。 埋在锥形区域中的深脊波导形成在欧姆层上。 在深脊波导的外部区域上形成聚酰亚胺或聚合物苯并环丁烯（BCB）。
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公开(公告)号：KR1020130055818A
公开(公告)日：2013-05-29
申请号：KR1020110121441
申请日：2011-11-21
Applicant: 한국전자통신연구원
IPC: G02B6/122
CPC classification number: G02B6/125 , G02B6/132 , G02B6/136 , G02B6/4232 , H01L24/81
Abstract: PURPOSE: A manufacturing method for an optical wave guide platform in which a monitoring photodiode is integrated in hybrid is provided to monitor the output light of an optical transmitter including optical combination loss generated when bonding a flip chip by bending the monitoring photodiode to an optical wave guide and bonding the flip chip in the upper side cladding layer of a leaky light area in which leaky light generates. CONSTITUTION: A manufacturing method for an optical wave guide platform in which a monitoring photodiode is integrated in hybrid includes the following steps. The lower side cladding layer(101) of an optical wave guide and a core layer(102) are mounted on a substrate(100). The core layer forms a wave guide pattern by using a photolithography and a dry-etching method. At this time, an optical leakage area(200) is formed in a part bending the core layer. The optical wave guide(20) of PLC is formed by depositing an upper side cladding layer(103) on an etched silica core layer(102). A trench is formed by using the photolithography and a dry-etching process in a PLC in which the optical wave guide is formed, and a terrace(104) in which an optical transmitter(30) is flip-chipped is formed. The optical transmitter is bonded in a flip chip bonding in the formed terrace. The monitoring photodiode is laminated on the upper cladding layer.
Abstract translation: 目的：提供一种用于混合监控光电二极管的光波导平台的制造方法，用于监视光发射机的输出光，其包括通过将监视光电二极管弯曲成光波而将倒装芯片接合时产生的光学组合损耗 引导和粘合泄漏光产生的漏光区域的上侧包覆层中的倒装芯片。 构成：其中监测光电二极管集成在混合动力系统中的光波导平台的制造方法包括以下步骤。 光波导的下侧包覆层（101）和芯层（102）安装在基板（100）上。 核心层通过使用光刻和干蚀刻方法形成波导图案。 此时，在将芯层弯曲的部分形成有光泄漏区域（200）。 PLC的光波导（20）通过在蚀刻的二氧化硅核心层（102）上沉积上侧包覆层（103）而形成。 通过在形成有光波导的PLC中使用光刻法和干法蚀刻工艺形成沟槽，并且形成其中将光发送器（30）倒装的露台（104）。 光学发射器在形成的露台中以倒装芯片结合。 监测光电二极管层叠在上包层上。
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公开(公告)号：KR101250441B1
公开(公告)日：2013-04-08
申请号：KR1020090053536
申请日：2009-06-16
Applicant: 한국전자통신연구원
IPC: H04B10/2581 , H04J14/02
CPC classification number: H04J14/0282
Abstract: 본 발명은 파장분할다중 방식의 수동형 광통신망 장치를 제공한다. 이 장치는 광 신호를 발생시키는 제1 광원부, 제1 광원부의 광 신호를 일단으로 입력받아 다중화하여 출력하는 제1 다중화/역다중화기, 및 제1 다중화/역다중화기의 타단에 연결된 제1 처핑된 브래그 격자를 포함한다. 제1 처핑된 브래그 격자는 제1 다중화/역다중화기를 통과한 광을 다시 반사시켜 제1 다중화/역다중화기 및 제1 광원부으로 일정 부분 재입력시킬 수 있다. 제1 다중화/역다중화기는 재입력된 광을 스펙트럼 슬라이싱(spectrun slicing)하고, 제1 다중화/역다중화기의 채널 파장을 주발진 파장으로 광원부을 동작시키어 자체 잠김(self-injection locking) 구조를 제공할 수 있다.
처핑된 회절격자 (chirped grating), 자체 잠김 (self-injection locking), 파장분할다중 방식의 수동형 광통신망(WDM-PON:Wavelength Division Multiplexed-Passive Optical Network), 광다중화기, 페브리-페롯 레이저 다이오드 (Fabry-Perot laser diode), 반사형 반도체 광증폭기 (Reflective Semiconductor Optical Amplifier), 파장무의존 광원 (colorless optical source)-
Patent Agency Ranking
公开(公告)号：KR1020120124548A
公开(公告)日：2012-11-14
申请号：KR1020110042251
申请日：2011-05-04
Applicant: 한국전자통신연구원
CPC classification number: H01S5/1028 , H01S5/0265 , H01S5/0425 , H01S5/1003 , H01S5/101 , H01S5/1014 , H01S5/2222 , H01S2301/16 , G02B6/12016 , G02B6/12033
Abstract: PURPOSE: A semiconductor optical device and a manufacturing method thereof are provided to minimize the leakage of a forward current for light amplification with a current breaking unit by forming the current breaking unit in a PNP structure. CONSTITUTION: A first mode converting core(MCC1), a light amplification core(LAC), a second mode converting core(MCC2), and a light modulating core(LMC) are placed on a first mode converting region(10), a light amplification region(20), a second mode converting region(30), and a light modulating region(40) of a semiconductor substrate respectively. A current breaking unit covers a side wall and an upper surface of the light amplification core. The first mode converting core, the light amplification core, the second mode converting core, and the light modulating core are sequentially arranged in a direction to be butt joint with each other. The current breaking unit includes cladding patterns laminated in order.
Abstract translation: 目的：提供一种半导体光学器件及其制造方法，其通过在PNP结构中形成电流分断单元，以最大限度地减少用于断电单元进行光放大的正向电流的泄漏。 构成：在第一模式转换区域（10）上放置第一模式转换核心（MCC1），光放大核心（LAC），第二模式转换核心（MCC2）和光调制核心（LMC） 放大区域（20），第二模式转换区域（30）和半导体衬底的光调制区域（40）。 电流断路单元覆盖光放大芯的侧壁和上表面。 第一模式转换核心，光放大核心，第二模式转换核心和光调制核心依次布置在彼此对接的方向上。 电流断路单元包括层叠的覆层图案。
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公开(公告)号：KR1020110064148A
公开(公告)日：2011-06-15
申请号：KR1020090120617
申请日：2009-12-07
Applicant: 한국전자통신연구원
IPC: H01L51/05
CPC classification number: H01S5/0265 , G02B6/1228 , G02B6/125 , G02B6/2813 , H01S5/1014 , H01S5/1085 , H01S5/50
Abstract: PURPOSE: An optical device module is provided to realize high integration and miniaturization using an embedded multi mode interference coupler integrated with a light modulator which has a ridge structure. CONSTITUTION: A semiconductor light amplifier(10) comprises a first active layer(12) and a second active layer(22) which are different. A light modulator(20) modulates a light signal transferred to the second active layer. The second active layer is formed between the light modulator and the semiconductor light amplifier. A multi-mode interference coupler(30) is integrated with the light modulator. The semiconductor light amplifier and the multi-mode interference coupler are connected to a bonding surface(50).
Abstract translation: 目的：提供一种光器件模块，以实现与具有脊结构的光调制器集成的嵌入式多模干涉耦合器的高集成度和小型化。 构成：半导体光放大器（10）包括不同的第一有源层（12）和第二有源层（22）。 光调制器（20）调制转移到第二有源层的光信号。 第二有源层形成在光调制器和半导体光放大器之间。 多模干涉耦合器（30）与光调制器集成。 半导体光放大器和多模干涉耦合器连接到接合表面（50）。
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公开(公告)号：KR1020100135081A
公开(公告)日：2010-12-24
申请号：KR1020090053536
申请日：2009-06-16
Applicant: 한국전자통신연구원
IPC: H04B10/2581 , H04J14/02
CPC classification number: H04J14/0282
Abstract: PURPOSE: A wavelength division multiplexed passive optical network apparatus is provided to adopt a wavelength independent light source and a chirped brag grating as the light source of a subscriber interface unit and a center BS(Base Station). CONSTITUTION: A multiplexer(118a) multiplexes the light signal of a light source unit(112a), and a chirped brag grating(124a) is connected to the other end of the multiplexer. The chirped brag grid reflects the light passing through the multiplexer. The brag grating inputs the certain portion of the light as the multiplexer and the light sources again. The multiplexer performs spectrum slicing of re-inputted light, and operates the light source by considering a channel wavelength as a main oscillation wavelength.
Abstract translation: 目的：提供一种波分复用无源光网络设备，采用波长独立光源和啁啾布拉格光栅作为用户接口单元和中心BS（基站）的光源。 构成：多路复用器（118a）复用光源单元（112a）的光信号，并且啁啾的布拉格光栅（124a）连接到多路复用器的另一端。 啁啾的布拉格格栅反射通过多路复用器的光。 布拉格光栅作为多路复用器和光源再次输入光的一部分。 多路复用器对再输入的光进行频谱分割，并且通过考虑通道波长作为主振荡波长来操作光源。
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公开(公告)号：KR100701127B1
公开(公告)日：2007-03-28
申请号：KR1020050085194
申请日：2005-09-13
Applicant: 한국전자통신연구원
Abstract: 양자점 형성 방법을 제공한다. 본 발명은 InP 기판 상에 상기 InP와 격자정합한 완충층을 형성하는 것을 포함한다. 상기 완충층 상에, 서로 격자부정합이 큰 물질층인 In(Ga)As 물질층과, InAl(Ga)As 물질층 또는 In(Ga, Al, As)P 물질층을 순차적으로 교번하여 증착함으로써 In(Ga, Al)As 또는 In(Ga, Al,P)As 양자점을 형성한다. 이렇게 본 발명은 격자 부정합에 의한 자발 형성 방법과 교번 증착에 의한 교번 성장법을 동시에 이용하여 균일도가 우수한 양질의 양자점을 형성할 수 있다.
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公开(公告)号：KR1020060064482A
公开(公告)日：2006-06-13
申请号：KR1020050056053
申请日：2005-06-28
Applicant: 한국전자통신연구원
CPC classification number: H04B10/40
Abstract: 자가 발진 통신 모듈을 제공한다. 본 발명은 광소자, 태양 전지 및 고주파 무선 통신 소자가 단일 집적된 자가 발진 통신 소자를 포함한다. 상기 광소자의 활성층을 In(Ga)As 양자점으로 구성하면, 800nm에서 1600nm에 이르는 넓은 대역폭의 통신 파장을 얻을 수 있고, 광변조 특성 또한 초당 20기가비트(Gbps) 이상의 고속 신호를 전달할 수 있다. 상기 태양 전지의 광흡수층으로 밴드갭이 실리콘에 비해 상대적으로 크면서 가시광 흡수 효율이 높은 InGa(Al)P 물질층으로 형성하여 작은 수광면적에서도 고효율의 전류생성이 가능하게 된다. 이에 따라, 본 발명은 태양 전지를 이용하여 극지나 사막과 같은 곳에서 외부 전원 장치가 없더라도 항상 동작이 가능함과 아울러 넓은 대역폭의 광통신 및 고주파 무선 통신이 가능하다.
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