公开(公告)号：US11521851B2

公开(公告)日：2022-12-06

申请号：US17162279

申请日：2021-01-29

Applicant: ASM IP Holding B.V.

Inventor： Eric James Shero ,  Michael Eugene Givens ,  Qi Xie ,  Charles Dezelah ,  Giuseppe Alessio Verni

IPC: H01L21/02 ,  H01L29/423 ,  H01L29/06 ,  H01L29/66 ,  H01L27/092

Abstract: Methods and systems for depositing vanadium and/or indium layers onto a surface of a substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a cyclical deposition process, depositing a vanadium and/or indium layer onto the surface of the substrate. The cyclical deposition process can include providing a vanadium and/or indium precursor to the reaction chamber and separately providing a reactant to the reaction chamber. The cyclical deposition process may desirably be a thermal cyclical deposition process. Exemplary structures can include field effect transistor structures, such as gate all around structures. The vanadium and/or indium layers can be used, for example, as barrier layers or liners, as work function layers, as dipole shifter layers, or the like.

公开(公告)号：US20210358745A1

公开(公告)日：2021-11-18

申请号：US17390608

申请日：2021-07-30

Applicant: ASM IP HOLDING B.V.

Inventor： Jan Willem Maes ,  Michael Eugene Givens ,  Suvi P. Haukka ,  Vamsi Paruchuri ,  Ivo Johannes Raaijmakers ,  Shaoren Deng ,  Andrea Illiberi ,  Eva E. Tois ,  Delphine Longrie ,  Charles Dezelah ,  Marko Tuominen

IPC: H01L21/02

Abstract: Methods for selective deposition are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. An inhibitor, such as a polyimide layer, is selectively formed from vapor phase reactants on the first surface relative to the second surface. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the first surface. The first surface can be metallic while the second surface is dielectric. Accordingly, material, such as a dielectric transition metal oxides and nitrides, can be selectively deposited on metallic surfaces relative dielectric surfaces using techniques described herein.

公开(公告)号：US20210331935A1

公开(公告)日：2021-10-28

申请号：US17238424

申请日：2021-04-23

Applicant: ASM IP Holding B.V.

Inventor： Charles Dezelah ,  Eric Shero

IPC: C01G31/04 ,  C23C16/08 ,  C23C16/455 ,  C23C14/06 ,  C23C14/54 ,  C23C16/52

Abstract: Methods of stabilizing a vanadium compound in a solution, compositions including a vanadium compound and a stabilizing agent, apparatus including the composition, systems that use the composition, and methods of using the compositions, apparatus, and systems are disclosed. Use of the stabilizing agent allows for use of desired precursors, while mitigating unwanted decomposition of the precursors.

公开(公告)号：US20250137118A1

公开(公告)日：2025-05-01

申请号：US18926748

申请日：2024-10-25

Applicant: ASM IP Holding B.V.

Inventor： Eric James Shero ,  Marko Tuominen ,  Charles Dezelah

IPC: C23C16/04

Abstract: Methods and apparatus are disclosed for forming a passivation layer on a substrate, comprising, providing the substrate in a reaction chamber, the substrate comprising a first surface and a second surface, contacting the substrate with a first precursor comprising an amine compound comprising at least two amine groups and contacting the substrate with a second precursor comprising at least one thioanhydride, wherein contacting the substrate with the first and second precursors forms the film selectively on the first surface relative to the second surface.

公开(公告)号：US20250113489A1

公开(公告)日：2025-04-03

申请号：US18903866

申请日：2024-10-01

Applicant: ASM IP Holding B.V.

Inventor： Ranjith Karuparambil Ramachandran ,  Vivek Koladi Mootheri ,  Andrea IIliberi ,  Charles Dezelah

IPC: H10B43/30 ,  H01L29/167 ,  H10B41/20 ,  H10B41/30

Abstract: Aspects of the disclosure generally relate to the field of semiconductor devices, and more particularly, a memory element comprising a charge trapping layer and systems and methods for producing the same. The method for forming a charge trapping layer of a memory element, comprises the steps of: providing a substrate into a reaction chamber; executing one or more cycles, a cycle comprising a hafnium precursor pulse; optionally, a zirconium precursor pulse; an oxygen reactant pulse; a germanium dopant pulse; and wherein, as a result of the one or more cycles, a charge trapping layer comprising one or more germanium-doped hafnium oxide (HfO2) film and/or one or more germanium-doped hafnium zirconium oxide (HZO) film is formed on the substrate.

公开(公告)号：US20250092509A1

公开(公告)日：2025-03-20

申请号：US18889069

申请日：2024-09-18

Applicant: ASM IP Holding B.V.

Inventor： Bhagyesh Purohit ,  Saima Alli ,  Eva E. Tois ,  Marko Tuominen ,  Charles Dezelah ,  Vincent Vandalon ,  Adam Vianna ,  Krzysztof Kamil Kachel ,  Eric James Shero ,  Yi Cheng Zhang ,  Anirudhan Chandrasekaran

IPC: C23C16/04 ,  C23C16/455 ,  C23C16/56 ,  H01L21/02

Abstract: The disclosure relates to methods and processing assemblies for selectively depositing organic polymer material on a first surface of a substrate relative to a second surface of the substrate by a cyclic deposition process is disclosed. The method comprises providing a substrate in a reaction chamber, providing a first vapor-phase organic reactant into the reaction chamber and providing a second vapor-phase organic reactant into the reaction chamber. In the method, the first and second vapor-phase organic reactants form the organic polymer material selectively on the first surface; and the first vapor-phase reactant comprises a cyclic compound comprising at least two primary amine groups.

公开(公告)号：US20250062128A1

公开(公告)日：2025-02-20

申请号：US18922849

申请日：2024-10-22

Applicant: ASM IP Holding B.V.

Inventor： Maart van Druenen ,  Charles Dezelah ,  Qi Xie ,  Petro Deminskyi ,  Giuseppe Alessio Verni ,  Ren-Jie Chang ,  Lifu Chen

IPC: H01L21/28 ,  C23C16/32 ,  H01L29/40 ,  H01L29/49

Abstract: Methods and systems for depositing rare earth metal carbide containing layers on a surface of a substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a cyclical deposition process such as an atomic layer deposition process for depositing a rare earth metal carbide containing layer onto a surface of the substrate.

公开(公告)号：US12217954B2

公开(公告)日：2025-02-04

申请号：US17407839

申请日：2021-08-20

Applicant: ASM IP Holding B.V.

Inventor： Shaoren Deng ,  Andrea Illiberi ,  Daniele Chiappe ,  Eva Tois ,  Giuseppe Alessio Verni ,  Michael Givens ,  Varun Sharma ,  Chiyu Zhu ,  Shinya Iwashita ,  Charles Dezelah ,  Viraj Madhiwala ,  Jan Willem Maes ,  Marko Tuominen ,  Anirudhan Chandrasekaran

IPC: H01L21/02 ,  B08B3/08 ,  B08B5/00 ,  C11D7/02 ,  C11D7/24 ,  C11D7/26 ,  C23C16/02 ,  H01L21/285

Abstract: Methods for cleaning a substrate are disclosed. The substrate comprises a dielectric surface and a metal surface. The methods comprise providing a cleaning agent to the reaction chamber.

公开(公告)号：US12148609B2

公开(公告)日：2024-11-19

申请号：US17472981

申请日：2021-09-13

Applicant: ASM IP Holding B.V.

Inventor： Varun Sharma ,  Daniele Chiappe ,  Eva Tois ,  Viraj Madhiwala ,  Marko Tuominen ,  Charles Dezelah ,  Michael Givens ,  Tom Blomberg

IPC: H01L21/02

Abstract: The current disclosure relates to methods of depositing silicon oxide on a substrate, methods of forming a semiconductor device and a method of forming a structure. The method comprises providing a substrate in a reaction chamber, providing a silicon precursor in the reaction chamber, the silicon precursor comprising a silicon atom connected to at least one oxygen atom, the at least one oxygen atom being connected to a carbon atom, and providing a reactant comprising hydrogen atoms in the reaction chamber to form silicon oxide on the substrate.

公开(公告)号：US20240352576A1

公开(公告)日：2024-10-24

申请号：US18761445

申请日：2024-07-02

Applicant: ASM IP Holding B.V.

Inventor： Charles Dezelah ,  Timothee Blanquart ,  René Henricus Jozef Vervuurt ,  Viljami Pore

IPC: C23C16/04 ,  C23C16/08 ,  C23C16/513 ,  C23C16/56 ,  H01L21/285

CPC classification number: C23C16/045 ,  C23C16/08 ,  C23C16/513 ,  C23C16/56 ,  H01L21/28556

Abstract: Disclosed are methods and systems for filling a gap. An exemplary method comprises providing a substrate to a reaction chamber. The substrate comprises the gap. The method further comprises forming a convertible layer on the substrate and exposing the substrate to a conversion reactant. Accordingly, at least a part of the convertible layer is converted into a gap filling fluid. The gap filling fluid at least partially fills the gap. The methods and systems are useful, for example, in the field of integrated circuit manufacture.