公开(公告)号：JP2003077910A

公开(公告)日：2003-03-14

申请号：JP2001265047

申请日：2001-08-31

Applicant: Jsr Corp ,  ジェイエスアール株式会社

Inventor： IKEDA NORIHIKO ,  SHINODA TOMOTAKA ,  KOMATSU SATOSHI ,  YAMADA KINJI

IPC: H01L21/316 ,  H01L21/8246 ,  H01L27/105

Abstract: PROBLEM TO BE SOLVED: To obtain a coating solution for forming a ferroelectric thin film, with which the ferroelectric film that has no cracks and uniformity is formed by one time coating and baking on a substrate such as platinum, iridium, and iridium oxide.
SOLUTION: This coating solution for forming the ferroelectric thin film contains a solvent expressed by a general formula (1), R
1 O(CHCH
3 CH
2 O)
2 R
2 (each of R
1 and R
2 expresses a monovalent organic group independently selected among hydrogen atom, 1-4C alkyl group or CH
3 CO-) and an organometallic compound.
COPYRIGHT: (C)2003,JPO

Abstract translation: 要解决的问题：为了获得形成铁电薄膜的涂布溶液，通过在铂，铱和氧化铱等基材上进行一次涂布和烘烤，形成不具有裂纹和均匀性的铁电体膜。 溶液：用于形成铁电薄膜的涂布液含有由通式（1）表示的溶剂，R 1 O（CHCH 3 CH 2 O）2 R 2（R 1和R 2） 表示独立地选自氢原子，1-4C烷基或CH 3 CO-）中的一价有机基团和有机金属化合物。

公开(公告)号：JP2003027001A

公开(公告)日：2003-01-29

申请号：JP2001215010

申请日：2001-07-16

Applicant: Jsr Corp ,  ジェイエスアール株式会社

Inventor： SHINODA TOMOTAKA ,  SUGIURA MAKOTO ,  YOSHIOKA MUTSUHIKO ,  SHIODA ATSUSHI ,  NISHIKAWA MICHINORI ,  YAMADA KINJI

IPC: B05D7/24 ,  C08L83/04 ,  C08L83/08 ,  C09D183/02 ,  C09D183/04 ,  C09D183/14 ,  H01L21/312 ,  H01L21/316

Abstract: PROBLEM TO BE SOLVED: To obtain a composition for film formation capable of obtaining a coating film low in relative dielectric constant and high in elastic modulus usable as an interlayer insulation film material for semiconductor devices, or the like, and even when a varnish is used together therewith, generating less foreign material even after long term storage. SOLUTION: The composition for film formation is characterized in that it contains (A) a hydrolytic condensate obtained when an alkoxysilane undergoes hydrolysis and condensation in the presence of a metal chelate compound and/or an acid catalyst and water, (B) a hydrolytic condensate obtained when an alkoxysilane undergoes hydrolysis and condensation in the presence of an alkali catalyst and water, (C) an organic solvent, and (D) water.

Abstract translation: 要解决的问题：为了获得能够获得相对介电常数低的弹性模量的涂膜和用作半导体器件的层间绝缘膜材料等的成膜组合物，甚至当使用清漆时 与此同时，即使在长期储存后也产生较少的异物。 解决方案：用于成膜的组合物的特征在于，其含有（A）烷氧基硅烷在金属螯合物和/或酸催化剂和水的存在下进行水解和缩合获得的水解缩合物，（B）水解缩合物 当烷氧基硅烷在碱催化剂和水，（C）有机溶剂和（D）水的存在下进行水解和缩合时得到。

公开(公告)号：JP2002038090A

公开(公告)日：2002-02-06

申请号：JP2000231303

申请日：2000-07-31

Applicant: JSR CORP

Inventor： SHINODA TOMOTAKA ,  SUGIURA MAKOTO ,  SHIODA ATSUSHI ,  YAMADA KINJI

IPC: C08G77/08 ,  C09D183/02 ,  C09D183/04 ,  C09D183/14

Abstract: PROBLEM TO BE SOLVED: To provide a composition for silica film formation capable of sintering in a short time, and excellent in cracking resistance and moisture absorption property as an interlayer insulating material for a semiconductor element, etc., and a silica film. SOLUTION: This composition for film formation contains a compound (A) prepared by hydrolyzing and condensating at least a compound selected from the group represented by general formulae RaSi(OR1)4-a....(1), Si(OR2)4....(2) and R3b(R4O)3-bSi-(R7)d-Si(OR5)3-cR6c....(3), in the presence of a metal chelating compound and/or an alkali catalyst, an alkali compound (B), and an organic solvent (C). In the formula, R is H, F, or a monovalent organic group, R1 to R6 are each a monovalent organic group, R7 is O, a phenylene group, or -(CH2)n-, a is an integer of 1-2, b and c are each a number of 0-2, d is a number of 0 or 1, and n is an integer of 1-6.

公开(公告)号：JPH11343414A

公开(公告)日：1999-12-14

申请号：JP16444798

申请日：1998-05-29

Applicant: JSR CORP

Inventor： MATSUBARA MINORU ,  INOUE YASUTAKE ,  TSUNODA MAYUMI ,  GOTO KOHEI ,  KUROSAWA TAKAHIKO ,  SHINODA TOMOTAKA ,  YAMADA KINJI

IPC: C08K5/057 ,  C08K5/54 ,  C08K5/56 ,  C08L79/08 ,  C08L83/04

Abstract: PROBLEM TO BE SOLVED: To obtain a thermosetting resin composition excellent in preservation stability as a solution without causing cracks when cured and capable of forming a cured product excellent in transparency, adhesion to various substrates, heat and wet heat resistances, electrical insulating properties, etc. SOLUTION: This thermosetting resin composition comprises (A) a hydrolyzate of a hydrolyzable organosilane compound and/or its partial condensate, (B) a polyimide obtained by reacting a compound having >=3 amino groups with a compound having a carboxylic acid dianhydride group and a diamine compound and having >=1 kinds of groups having reactivity and/or a polyamic acid which is its precursor and preferably further (C) a chelate compound and/or an alkoxide compound of a metal selected from the group of zirconium, titanium and aluminum.

公开(公告)号：JPH11157838A

公开(公告)日：1999-06-15

申请号：JP33144997

申请日：1997-12-02

Applicant: JSR CORP

Inventor： KUROSAWA TAKAHIKO ,  SHINODA TOMOTAKA ,  YAMADA KINJI

IPC: C01G23/053 ,  C01B33/149 ,  C01G25/02 ,  C08G77/58 ,  C09D183/02 ,  C09D183/14 ,  H01L21/312

Abstract: PROBLEM TO BE SOLVED: To improve the uniformity of a coating film, dielectric characteristics, oxygen plasma resistance and adhesive proparty to a substrate by incorporating a specific alkyl alkoxysilane partially hydrolyzed product and/or partially condensation product, a chelate compound of titanium or zirconium and an organic solvent. SOLUTION: This film forming composition is obtained by blending 100 pts.wt. alkyl alkoxysilane partially hydrolyzed product and/or partialiy condensation product expressed by a formula, R n Si(OR )4-n (each of R represents a 1-5C alkyl or a 6-20C aryl and (n) represents 1-2), 0.5-300 mmol, preferably 0.5-200 mol chelate compound selected from a titanium chelate compound and a zirconium chelate compound expressed by a formula, R 4 M(OR )4-t (R represents a chelating agent, M represents titanium or zirconium, R represents a 2-5C alkyl or a 6-20C aryl and (t) represents 1-4) and 20-4,000 pts.wt. at least one kind of the organic solvent selected from ethyl lactate, mthoxymethyl propionate and ethoxyethyl propionate.

公开(公告)号：JPH10242136A

公开(公告)日：1998-09-11

申请号：JP5715597

申请日：1997-02-26

Applicant: JSR CORP

Inventor： KUROSAWA TAKAHIKO ,  YAMADA KINJI ,  SHINODA TOMOTAKA ,  MATSUBARA MINORU ,  INOUE YASUTAKE ,  GOTO KOHEI

IPC: C08L79/08 ,  C08L83/04 ,  H01B3/46 ,  H01L21/31 ,  H01L21/312 ,  H01L21/768 ,  H01L23/522

Abstract: PROBLEM TO BE SOLVED: To provide an insulating film having a low dielectric constant and a high heat resistance, high moisture resistance, etc., and a semiconductor device which has the insulating film on a wiring layer, does not consume much electric power, and has a high-speed operability, high reliability, etc. SOLUTION: An insulating film 4 is composed of the cured material of a curable resin composition containing at least one kind of component selected out of a group composed of (A) the hydrolytic product of a hydrolytic organosilane compound and/or its partial condensate, (B) a hydrolytic silyl group and/or polyamic acid having a carboxylic acid anhydride group, and the hydrolytic silyl group and/or polyimide having the carboxylic acid anhydride group. A semiconductor device has the above-mentioned insulating film on a wiring layer 3.