公开(公告)号：JP2004343137A

公开(公告)日：2004-12-02

申请号：JP2004208283

申请日：2004-07-15

Applicant: Sony Corp ,  ソニー株式会社

Inventor： ASAZUMA YASUNORI ,  YANASHIMA KATSUNORI ,  MIYAJIMA TAKAO

IPC: H01L21/205 ,  H01L33/06 ,  H01L33/32 ,  H01S5/343 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To improve crystallinity and electrical conductivity, and to average the composition ratio or p-type impurity concentration within the crystal growth side. SOLUTION: A first layer 11, consisting of AlGaN mixed crystal with a thickness of about 1 to 100 nm, and a second layer 12, consisting of p-type GaN doped with Mg to a thickness of about 1 to 100 nm are alternately laminated in a plurality of laminations, respectively. Since the first layer 11 and the second layer 12, which have independent contents of aluminum and p-type impurity concentrations and are different from each other, are formed in separate processes, respectively, a proper p-type group III nitride compound semiconductor having the properties as p-type AlGaN mixed crystal, as whole, is obtained. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提高结晶度和导电性，并平均晶体生长侧内的组成比或p型杂质浓度。 解决方案：由厚度约1至100nm的AlGaN混合晶体构成的第一层11和由掺杂有Mg的厚度约1至100nm的p型GaN组成的第二层12是 交替层叠在多个叠片中。 由于具有独立含量的铝和p型杂质浓度彼此不同的第一层11和第二层12分别在分开的工艺中分别形成适当的p型III族氮化物半导体，其具有 获得了作为p型AlGaN混晶的性能。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2004273955A

公开(公告)日：2004-09-30

申请号：JP2003065783

申请日：2003-03-11

Applicant: Sony Corp ,  ソニー株式会社

Inventor： ASAZUMA YASUNORI ,  HIRATA SHOJI

IPC: H01S5/042 ,  H01S5/323 ,  H01S5/343

Abstract: PROBLEM TO BE SOLVED: To provide a broad area type semiconductor light emitting device which restricts a concentrated injection of a current on a specific region to make NFP uniform and suppresses a filamentation to enhance the reliability.
SOLUTION: The semiconductor light emitting device for emitting laser beams is constituted of: at least a first clad layer 12 of a first conductive type; an active layer 11; a semiconductor laminated body containing a laminated body of a second clad layer 10 of a second conductive type; a first electrode 15 formed so as to connect with the first clad layer 12 in a current injection stripe region which injects a current into a semiconductor laminated body and to divide a region in a direction different from a resonator direction formed in the semiconductor laminated body to come into contact with a surface of the semiconductor laminated body; and a second electrode 16 formed on the surface of the semiconductor laminated body so as to connect with the second clad layer 10.
COPYRIGHT: (C)2004,JPO&NCIPI

公开(公告)号：JP2004128520A

公开(公告)日：2004-04-22

申请号：JP2003417115

申请日：2003-12-15

Applicant: Sony Corp ,  Sumitomo Electric Ind Ltd ,  ソニー株式会社 ,  住友電気工業株式会社

Inventor： ASAZUMA YASUNORI ,  TOMITANI SHIGETAKA ,  TAMAMURA KOJI ,  TOJO TAKESHI ,  GOTO OSAMU ,  MOTOKI KENSAKU

IPC: H01L21/205 ,  H01L33/06 ,  H01L33/08 ,  H01L33/14 ,  H01L33/32 ,  H01L33/36 ,  H01S5/323 ,  H01S5/343 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device which has superior luminous properties, is very reliable, and has a long service life. SOLUTION: A method of manufacturing the semiconductor light emitting device includes a step of enabling a nitride III-V compound semiconductor layer forming a light emitting device structure to grow on a nitride III-V compound semiconductor substrate where a plurality of second regions having a second average dislocation density higher than a first average dislocation density possessed by a first crystal region are arranged in the first crystal region in a first direction at a first interval and arranged in a second direction perpendicular to the first direction at a second interval shorter than the first interval. In the above method, seven or more of the rows of the second regions in the second direction are not substantially included, and a device region is demarcated on the nitride III-V compound semiconductor substrate so as not to enable the second regions to be included in the light emitting region of the semiconductor light emitting device. COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2004088134A

公开(公告)日：2004-03-18

申请号：JP2003417114

申请日：2003-12-15

Applicant: Sony Corp ,  Sumitomo Electric Ind Ltd ,  ソニー株式会社 ,  住友電気工業株式会社

Inventor： ASAZUMA YASUNORI ,  TOMITANI SHIGETAKA ,  TAMAMURA KOJI ,  TOJO TAKESHI ,  GOTO OSAMU ,  MOTOKI KENSAKU

IPC: H01S5/323 ,  H01S5/343

Abstract: PROBLEM TO BE SOLVED: To realize a semiconductor light emitting element which has a good luminous characteristic, high reliability and a long operational life. SOLUTION: The semiconductor light emitting element includes a nitride-based Group III-V compound semiconductor substrate and a nitride-based Group III-V compound semiconductor layer. In the substrate, a plurality of second zones having a second average dislocation density higher than a first average dislocation density are regularly arranged in a first crystalline area having the first average dislocation density. The semiconductor layer having a light emitting element structure is grown on the substrate. At least one second area is present on end faces or corners of the substrate. COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2004087763A

公开(公告)日：2004-03-18

申请号：JP2002246368

申请日：2002-08-27

Applicant: Sony Corp ,  ソニー株式会社

Inventor： YAMAGUCHI KYOJI ,  NAKAJIMA HIROSHI ,  ASAZUMA YASUNORI

IPC: H01S5/343 ,  H01S5/323

Abstract: PROBLEM TO BE SOLVED: To provide a nitride semiconductor light emitting device having an active layer of a quantum well structure excellent in crystallinity.
SOLUTION: A structure 10 near the active layer of a GaN semiconductor laser element having a light emitting wavelength of 460nm is constituted of a lower GaN light guide layer 12 having a film thickness of 80nm, a barrier layer 14, a strain compensating layer 16A, a well layer 18, three periods of strain compensating layer 16B, a barrier layer, and an upper GaN light guide layer 20 having a film thickness of 80nm. The barrier layer is constituted of an In
X1 Ga
1-X1 N(X1=0.02) layer having a film thickness of 50Å, the strain compensating layer is constituted of an Al
X2 Ga
1-X2 N(X2=0.04) layer having a film thickness of 10Å, and the well layer is constituted of an In
x3 Ga
1-X3 N(X3=0.18) layer having a film thickness of 25Å. The strain compensating layer is interposed between all well layers and barrier layers neighbored to the well layers. The band gap energy of the strain compensating layer is larger than that of the barrier layer, and the lattice constant of the strain compensating layer under free standing is smaller than that of the barrier layer.
COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2003298110A

公开(公告)日：2003-10-17

申请号：JP2003119604

申请日：2003-04-24

Applicant: Sony Corp ,  ソニー株式会社

Inventor： KAWAI HIROHARU ,  IKEDA MASAO ,  NAKAMURA FUMIHIKO ,  HASHIMOTO SHIGEKI ,  ASAZUMA YASUNORI ,  YANASHIMA KATSUNORI

IPC: H01L21/205 ,  H01L33/32 ,  H01S5/323 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To enable an n-type AlGaN clad layer and a p-type AlGaN clad layer, which are both superior in quality, to grow so as to manufacture a high- performance semiconductor laser. SOLUTION: In a method of manufacturing a GaN semiconductor laser, the growth temperature of the p-type AlGaN clad layer is set lower than that of the n-type AlGaN clad layer, and the growth temperatures of the p-type AlGaN clad layer and the n-type AlGaN clad layer are set equal to that of a GaInN active layer or above and set at 980°C or below, e.g. 930 to 960°C. It is preferable that the surface of a base is covered with a p-type AlGaN cap layer which has been grown at the growth temperature nearly equal to that of the GaInN active layer or below before the p-type AlGaN clad layer is grown. COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：为了使得质量优异的n型AlGaN包层和p型AlGaN包层生长以制造高性能半导体激光器。 解决方案：在制造GaN半导体激光器的方法中，将p型AlGaN包覆层的生长温度设定为低于n型AlGaN包覆层的生长温度，并且p型AlGaN的生长温度 将n型AlGaN覆盖层设定为等于GaInN有源层以上且设定在980℃以下，例如 930至960℃。 优选的是，在p型AlGaN覆盖层生长之前，在与GaInN有源层的生长温度几乎相同的生长温度下生长的p型AlGaN覆盖层覆盖基底的表面。 版权所有（C）2004，JPO

公开(公告)号：JP2003124572A

公开(公告)日：2003-04-25

申请号：JP2001315703

申请日：2001-10-12

Applicant: SUMITOMO ELECTRIC INDUSTRIES ,  SONY CORP

Inventor： ASAZUMA YASUNORI ,  TOMITANI SHIGETAKA ,  TAMAMURA KOJI ,  TOJO TAKESHI ,  GOTO OSAMU ,  MOTOKI KENSAKU

IPC: C30B25/02 ,  H01L21/20 ,  H01L33/00 ,  H01L33/02 ,  H01L33/16 ,  H01L33/32 ,  H01S5/02 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/323 ,  H01S5/40

Abstract: PROBLEM TO BE SOLVED: To realize a highly reliable semiconductor light emitting element having good emission characteristics and a long lifetime, a highly reliable semiconductor element having good characteristics and a long lifetime. SOLUTION: At the time of fabricating a semiconductor light emitting element or a semiconductor element by growing a nitride based III-V compound semiconductor layer for forming a light emitting element structure or an element structure on a nitride based III-V compound semiconductor substrate 1 where a plurality of second regions B having a second mean dislocation density higher than a first mean dislocation density are arranged regularly in a first region A of crystal having the first mean dislocation density, an element region 2 is defined on the nitride based III-V compound semiconductor substrate such that the second region B is not included substantially or the second region B is not included in the emission region 2 or the active region.

公开(公告)号：JP2001345520A

公开(公告)日：2001-12-14

申请号：JP2000166598

申请日：2000-06-02

Applicant: SONY CORP

Inventor： NAKAJIMA HIROSHI ,  HASHIMOTO SHIGEKI ,  ASAZUMA YASUNORI

IPC: G11B7/125 ,  G11B7/22 ,  H01L33/32 ,  H01S5/323 ,  H01S5/343 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a nitride based III-V compound semiconductor light-emitting element of high quality, in which indium is prevented from being captured into an upper layer of a layer containing indium and crystallinity of the upper layer of the layer containing indium is improved. SOLUTION: This method of manufacturing a semiconductor light-emitting element has a process, in which a III-V compound semiconductor layer containing nitrogen is formed through by crystal growth to take place. A first semiconductor layer (16) as the III-V compound semiconductor containing indium and nitrogen is grown at a first temperature. A second semiconductor layer (18), composed of AlxGa1-xN (where 0

公开(公告)号：JPH1174203A

公开(公告)日：1999-03-16

申请号：JP16975998

申请日：1998-06-17

Applicant: SONY CORP

Inventor： ASAZUMA YASUNORI ,  HASHIMOTO SHIGEKI ,  NAKAMURA FUMIHIKO ,  YANASHIMA KATSUNORI ,  IKEDA MASAO

IPC: H01L21/205 ,  H01L33/32 ,  H01S5/00 ,  H01S5/323 ,  H01L33/00 ,  H01S3/18

Abstract: PROBLEM TO BE SOLVED: To provide a method and device for growing a nitride III-V compound semiconductor which enables efficient growth of a nitride-based III-V compound semiconductor of high quality. SOLUTION: The pressure inside a reaction tube 1 of an MOCVD device is set at not less than 1.1 atm., particularly not less than 1.1 atm. and not more than 2 atm., preferably 1.2-1.8 atm., and a nitride-based III-V compound semiconductor, for example, GaN, InGaN or the like is grown. The reaction tube 1 is made of quartz glass so as to obtain sufficient strength for withstanding the difference between inner and outer pressures. The surface of a substrate 3 on which the nitride-based III-V compound semiconductor may face upward or downward.

公开(公告)号：JPH10144612A

公开(公告)日：1998-05-29

申请号：JP30206996

申请日：1996-11-13

Applicant: SONY CORP

Inventor： KAWAI HIROHARU ,  IKEDA MASAO ,  NAKAMURA FUMIHIKO ,  HASHIMOTO SHIGEKI ,  ASAZUMA YASUNORI ,  YANASHIMA KATSUNORI

IPC: H01L21/205 ,  H01L21/203 ,  H01S5/00 ,  H01S5/30 ,  H01S5/323 ,  H01S5/343 ,  H01S3/18

Abstract: PROBLEM TO BE SOLVED: To provide a method for growing a semiconductor device which can deteriorate such a first nitride family-III-V compound semiconductor layer containing In as a GaInN layer when it is necessary to grow a second nitride family-II-V compound semiconductor layer not containing In on the first compound semiconductor layer at a growth temperature higher than the growth temperature than that of the first compound semiconductor layer. SOLUTION: In a method for manufacturing a GaN semiconductor laser, a growth temperature of a p type AlGaN cladding layer 29 and a p type GaN contact layer 30, which are provided above a GaInN active layer 26 and which is necessary to be grown at a growth temperature higher than that of the active layer, is set to be above the growth temperature of the active layer 26 and below 980 deg.C, e.g. between 930 and 960 deg.C. Preferably, prior to growth of the cladding layer 29, an underlying layer is previously covered with a p type AlGaN cap layer 28 which was grown at a growth temperature equal to or lower than the growth temperature of the active layer 26.