Abstract:
PURPOSE:To improve controllability and uniformity of the thickness of individual semiconductor layers as well as controllability of their composition and obtain desired characteristics, by sequentially forming a first clad layer, active layer, second clad layer and cap layer in a flattened manner on a flat substrate. CONSTITUTION:A clad layer 12, active layer 13, clad layer 14 and cap layer 15 are respectively grown epitaxially on the one main surface of a flat substrate 11 by the continuous MOCVD or the like. Then a part with a required thickness of the layer 14 is left with a depth ranging from the layer 15 to the layer 14 to selectively etch the part where a current strangulation region is to be formed. Then a different conductive type of semiconductor layer is epitaxially grown on the exposed layer 14 and the remaining striped layer 15 so as to envelop the layer 15, resulting in forming a current strangulation layer 17. Then the layer 17 is coated with a material layer 18 to flatten the surface of the former layer. Consequently the layer 15 and the current strangulation region 27 are exposed on the surface. The exposed surface is coated with an insulation layer 19 as necesary to form a striped electrode window on the layer 15 so that an electrode 20 is ohmically formed, whereas the surface of the back of the substrate 11 is ohmically coated with an electrode 21.
Abstract:
PURPOSE:To facilitate formation of resonance faces, and to simplify the manufacturing process of semiconductor laser by a method wherein a lattice type crystal growth obstructing layer is formed on one main face of a semicnductor substrate, and crystal growth layers are formed on the main face excluding the obstructing layer thereof. CONSTITUTION:An insulating layer is formed by adhesion on the whole surface of a compound semiconductor substrate 1 (N type GaAs), selective etching is performed according to the photolithography method to form a lattice type crystal growth obstructing layer 2, and crystal growth layers are formed in separated parts 7 excluding the obstructing layer 2 thereof. The direction of the obstructing layer 2 thereof extending in a lattcie type is selected as to make resonance faces of laser elements to be formed afterward to become as the (110) face. Then the crystal growth layers 3-6 are formed in order only in the separated parts 7 according to the normal liquid phase epitaxial growth method. After epitaxial growth is completed, chips formed in a pellet type are formed in the separated parts 7, and at the same time, the resonance faces 8 of mutually facing edge faces are formed along the edge sides of the obstructing layer 2 of the respective chip parts to simplify the manufacturing process of semiconductor laser.
Abstract:
PROBLEM TO BE SOLVED: To provide a DNA chip-related technique for proceeding with hybridization quickly and efficiently and obtaining precise detection results. SOLUTION: By using a disk-like substrate 1 or a DNA chip 10 in which a detection section 3, having at least a reaction region R that is a field of hybridization and counter electrodes, such as E 1 -E 2 , arranged so that an electric field can be applied to a medium stored or retained in the reaction region R, is arranged, nucleic acid D for detection is immobilized on a detection surface U by applying an electric field using the counter electrodes, the nucleic acid D for detection and target nucleic acid T are hybridized, and a surplus material B is removed, thus proceeding with hybridization quickly and efficiently and obtaining precise detection results. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide a substrate for a bioassay formed into a disk shape and used more variously. SOLUTION: A principal surface of this substrate 1 for a bioassay takes on a tabular shape like an optical disk such as a CD. At the circle center of the substrate 1, a center hole 2 is formed for inserting thereinto a chucking mechanism for rotation and holding. The substrate 1 is rotatively driven centering on the center hole 2. On the substrate 1, two areas are formed, that is, a record area 3 and a reaction area 4, concentrically formed in the radial direction. The record area 3 is an area where information is optically recorded/reproduced by laser light irradiation like an optical disk information record medium. The reaction area 4 is an area serving as a field for a mutual reaction between probe DNA (nucleotide chain for detection) and sample DNA (target nucleotide chain), and specifically an area serving as a field for hybridization reaction. COPYRIGHT: (C)2005,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To improve hybridization efficiency by devising so that a detection nucleotide chain in the elongated state is immobilized on the entire reaction area. SOLUTION: This hybridization detection part 1a is equipped with the reaction area R which is a place for hybridization between the detection nucleotide chain X and a target nucleotide chain having a base sequence which is complementary to the detection nucleotide chain, counter electrodes A, B disposed on the reaction area R, and a floating electrode C arranged in the scattered state between the counter electrodes A, B. This sensor chip where the detection part 1a is formed and this hybridization method performed on the detection part 1a are also provided. COPYRIGHT: (C)2004,JPO
Abstract:
PROBLEM TO BE SOLVED: To build a health care system which is suitable for supporting health control, care at home, nursing at home, etc., for a large number of persons with weak health by providing correct information and appropriate treatments to them. SOLUTION: A health care system is built by providing a information transmitting station 10 and at least one terminal 20, 20' 20", etc. for users, while information related to health are transmitted to all the terminals 20, 20', 20", etc. for the users in the system from the information transmitting station 10 side and the information transmitting station 10 side can deal with corresponding informations from each of the terminals 20, 20', 20", etc. for users. It is possible thereby for the terminal 20, 20', 20", etc. side to obtain these information related to health and to obtain specified treatments, etc., based on the corresponding information with respect to these informations.
Abstract:
PURPOSE:To simplify the mechanism of a measuring apparatus by detecting a remote visual field image by one image pickup operation of an image pickup device, by detecting the light projected from a semiconductor device by the image pickup device through an attenuation filter. CONSTITUTION:A plurality of laser diode elements 1 are arranged on the mount stand of a photosemiconductor device in one bar like row and laser beam is emitted from the plane of cleavage of each element 1. At each time when the optical measurement of the elements is finished, the mount stand 3 is moved by one arrangement pitch. An attenuation filter 4 is arranged in front of the elements and a half mirror 5 is arranged in front of the filter 4. A pair of laser beam attenuated by the filter is applied to an image pickup device 6 from the half mirror 5 and the reflected beam from the half mirror 5 is applied to a photodiode 7 for measuring current and optical output characteristics. Then, remove visual field image is picked up by the device 6 through the contact of the probe P of a measuring device with the elements 1 and the mechanism of the measuring apparatus is made simple.