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    61.
    发明专利
    未知

    公开(公告)号：DE602005009408D1

    公开(公告)日：2008-10-16

    申请号：DE602005009408

    申请日：2005-01-14

    Applicant: SUMITOMO ELECTRIC INDUSTRIES

    Inventor： MEGURO KIICHI ,  YAMAMOTO YOSHIYUKI ,  IMAI TAKAHIRO

    IPC: C30B29/04 ,  C30B25/20 ,  H01L21/205 ,  C30B33/00

    Abstract: A diamond single crystal substrate manufacturing method for growing by vapor-phase synthesis a single crystal from a diamond single crystal seed substrate, comprising etching away by reactive ion etching, prior to single crystal growth, at least 0.5 mu m and less than 400 mu m, in etching thickness off the surface of the seed substrate which has been mechanically polished, thereby removing from the surface of the seed substrate the work-affected layers caused by mechanical polishing; and growing then a single crystal thereon. The manufacturing method provides a diamond single crystal substrate having a high quality, large size, and no unintentional impurity inclusions, and suitable for use as semiconductor materials, electronic components, optical components or the like.

    METHOD FOR MANUFACTURING DIAMOND SINGLE CRYSTAL SUBSTRATE, AND DIAMOND SINGLE CRYSTAL SUBSTRATE
    62.
    发明专利
    METHOD FOR MANUFACTURING DIAMOND SINGLE CRYSTAL SUBSTRATE, AND DIAMOND SINGLE CRYSTAL SUBSTRATE 未知

    公开(公告)号：HK1094790A1

    公开(公告)日：2007-04-13

    申请号：HK07102147

    申请日：2007-02-26

    Applicant: SUMITOMO ELECTRIC INDUSTRIES

    Inventor： MEGURO KIICHI ,  YAMAMOTO YOSHIYUKI ,  IMAI TAKAHIRO

    IPC: C01B20060101

    Abstract: A method for manufacturing a diamond single crystal substrate, in which a single crystal is grown from a diamond single crystal serving as a seed substrate by vapor phase synthesis, said method comprising: preparing a diamond single crystal seed substrate which has a main surface whose planar orientation falls within an inclination range of not more than 8 degrees relative to a {100} plane or a {111} plane, as a seed substrate; forming a plurality of planes of different.orientation which are inclined in the outer peripheral direction of the main surface relative to the main surface on one side of this seed substrate, by machining; and then growing a diamond single crystal by vapor phase synthesis.

    65.
    发明专利
    未知

    公开(公告)号：DE69817642T2

    公开(公告)日：2004-08-05

    申请号：DE69817642

    申请日：1998-03-10

    Applicant: SUMITOMO ELECTRIC INDUSTRIES

    Inventor： SAITO HIROHISA ,  TSUNO TAKASHI ,  SHIOMI HIROMU ,  KUMAZAWA YOSHIAKI ,  IMAI TAKAHIRO

    IPC: H01J1/304 ,  H01J1/30

    Abstract: An electron-emitting element comprises a diamond substrate, and a diamond protrusion grown on a surface of the diamond substrate so as to have a pointed portion in a form capable of emitting an electron. Since the diamond protrusion formed by growth has a sharply pointed tip portion, it can fully emit electrons. Preferably, the surface of the diamond substrate is a ä100ü face, and the diamond protrusion is surrounded by ä111ü faces.

    68.
    发明专利
    未知

    公开(公告)号：DE3856475T2

    公开(公告)日：2001-11-08

    申请号：DE3856475

    申请日：1988-03-11

    Applicant: SUMITOMO ELECTRIC INDUSTRIES

    Inventor： IMAI TAKAHIRO ,  FUJIMORI NAOJI ,  NAKAHATA HIDEAKI

    IPC: H01L21/20 ,  H01L21/36 ,  C30B29/04

    Abstract: A thin film single crystal substrate which comprises a base substrate made of single crystal diamond having the (100) or (110) plane orientation, an intermediate layer of single crystal silicon carbide, and at least one thin film of a single crystal of a material selected from the group consisting of silicon, boron nitride, gallium nitride, indium nitride, aluminum nitride, boron phosphide, cadmium selenide, germanium, gallium arsenide, gallium phosphide, indium phosphide, gallium antimonide, indium arsenide, indium antimonide, aluminum phosphide, aluminum arsenide, aluminum antimonide, cadmium telluride, mercury sulfide, zinc oxide, zinc sulfide, zinc selenide and zinc telluride.

    70.
    发明专利
    未知

    公开(公告)号：DE3856475D1

    公开(公告)日：2001-07-12

    申请号：DE3856475

    申请日：1988-03-11

    Applicant: SUMITOMO ELECTRIC INDUSTRIES

    Inventor： IMAI TAKAHIRO ,  FUJIMORI NAOJI ,  NAKAHATA HIDEAKI

    IPC: H01L21/20 ,  H01L21/36 ,  C30B29/04

    Abstract: A thin film single crystal substrate which comprises a base substrate made of single crystal diamond having the (100) or (110) plane orientation, an intermediate layer of single crystal silicon carbide, and at least one thin film of a single crystal of a material selected from the group consisting of silicon, boron nitride, gallium nitride, indium nitride, aluminum nitride, boron phosphide, cadmium selenide, germanium, gallium arsenide, gallium phosphide, indium phosphide, gallium antimonide, indium arsenide, indium antimonide, aluminum phosphide, aluminum arsenide, aluminum antimonide, cadmium telluride, mercury sulfide, zinc oxide, zinc sulfide, zinc selenide and zinc telluride.

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