Abstract:
PURPOSE:To achieve the increase in the density of integration by making positive use of parasitic elements by multilayer structures of P and N types as elements of a part of the circuit and forming these in a three-dimentional structure with a part of the circuit.
Abstract:
PURPOSE:To obtain a transistor circuit which features an easy IC formation and stable action and thus is suitably applied for the gain control circuit, multiplication circuit, switching circuit, etc.
Abstract:
PURPOSE:To prevent the leakage of the modulating signal to the antenna and to decrease the cost, by providing the terminals between the antenna and the modulating circuit.
Abstract:
PURPOSE:Synchronous detection system which has been satisfactorily improved concerning distortion, compared with conventional synchronous detection systems.
Abstract:
PROBLEM TO BE SOLVED: To provide a transmission line element capable of discretely changing an electric length of a conductor pattern layer, and an electronic apparatus. SOLUTION: Hollow passages 21 are formed at a dielectric layer 20, and two kinds of fluids F1, F2 are made to coexist in the passages 21 without being mixed with each other in extension directions of the passages 21. By changing a positional relationship with respect to conductor pattern layers 10 of the fluids F1, F2 in the passages 21 by drive parts 40, electric lengths of the conductor pattern layers 10 are changed to discrete binary values. It is preferable that passages 21A-21C are made independent of one another without communicating with one another, and the drive part 40 is arranged on each of the passages 21A-21C. The positional relationship of the fluids F1, F2 with respect to the conductor patterns 10 can be changed independently of the passages 21A-21C by the drive parts 40, and discrete multiple values can be optionally selected as the electric lengths of the conductor pattern layers 10. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To load the same substrate with a semiconductor element and a micro-electromechanical device by manufacturing the semiconductor element and the micro-mechanical device on the same substrate, and then forming wiring for connecting the semiconductor element and the micro-mechanical device to each other. SOLUTION: This semiconductor compound device 1 includes: a semiconductor element 21 formed on the substrate 11; an insulating film 41 formed on the substrate 11 to cover the semiconductor element 21; the micro-electromechanical device 31 formed on the insulating film 41; and a wiring layer 50 for connecting the semiconductor element 21 and the micro-electromechanical device 31 to each other. The device solves the above problem. COPYRIGHT: (C)2007,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a microresonator in which variation in central frequency of an oscillator is reduced. SOLUTION: The microresonator comprises a plurality of beam type oscillator elements 25 and 26 having resonance frequencies f1 and f2 dependent on the beam length wherein the oscillator elements 25 and 26 are arranged in such an order as the beam length increases from the inside toward the outside. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide a microoscillator exhibiting excellent resonance characteristics by suppressing variation in central frequency, interference between adjacent oscillator elements, and the like, and to provide a semiconductor device equipped with the microoscillator, and a band filter by that microoscillator. SOLUTION: In the microoscillator, a plurality of beam type first oscillator elements 33 are connected in parallel and a non-resonating beam type second oscillator elements 34 is arranged between adjacent first oscillator elements 33. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide a filter device for developing a filtering function equivalent to that of a band-pass filter, without mutual mechanical connecting the beam electrodes of two minute resonators. SOLUTION: A plurality of minute resonators 15, 16, 17, 18 are electrically interconnected in a lattice form among two input terminals for balanced input and two output terminals for balanced output, by respectively connecting the minute resonator 15 (16), each having a beam structure in series between the input terminal 11 (12) and the output terminal 13 (14) and by respectively connecting the minute resonator 17 (18), each having a beam structure in series in between the input terminal 11 (12) and the output terminal 14 (13). COPYRIGHT: (C)2006,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide a micro-machine for a high frequency filter having a high Q value and a higher frequency band. SOLUTION: This micro-machine 20 includes an output electrode 7 placed on a substrate 1, a layer insulation film consisting of a first insulation film 9 and a second insulation film 11 placed on the substrate 1 in a manner to cover the electrode 7, a hole pattern 11a placed on the second insulation film 11 in a manner to reach the electrode 7 and a strip-like oscillator electrode 15 placed on the second insulation film 11 so that the electrode 15 crosses over a space portion A within the hole pattern 11a. COPYRIGHT: (C)2004,JPO