公开(公告)号：JPH06350133A

公开(公告)日：1994-12-22

申请号：JP13842293

申请日：1993-06-10

Applicant: TOSHIBA CORP

Inventor： NAITO KATSUYUKI ,  WATANABE YOKO ,  SAKAI TADASHI

IPC: H01L51/05 ,  H01L33/34 ,  H01L33/42 ,  H01L51/50 ,  H01L51/52 ,  H05B33/28 ,  H01L33/00 ,  H01L29/28 ,  H05B33/14

Abstract: PURPOSE:To provide an optical functional element, such as an organic EL element that is stable and free from flaking of films and variations in structure, and a IV-group semiconductor EL element that provides favorable contact and has excellent characteristics. CONSTITUTION:This optical functional element transmits and receives light through a hydrophilic transparent electrode. The optical functional element has a thin film of polysilane in contact with the transparent electrode; the polysilane has hydrophilic groups introduced into its side chain.

公开(公告)号：JPH06268194A

公开(公告)日：1994-09-22

申请号：JP5435193

申请日：1993-03-15

Applicant: TOSHIBA CORP

Inventor： SANO KENJI ,  UMEDA AKIFUMI ,  SAKAI TADASHI ,  IIDA ATSUKO ,  MORI MIKI ,  OKUWADA HISAMI

IPC: H01L27/15

Abstract: PURPOSE:To provide a highly integrated circuit device, by reducing the number of external lead-in/out leads and an area of wiring regions for connecting a circuital part between different substrates. CONSTITUTION:A silicon substrate 21 is put on a silicon substate 31 so that a light-emitting part 24 and a light receiving part 25 in a circuit on the silicon substrate 21 are fitted to a light-receiving part 35 and a light-emitting part 34 on the silicon substrate 31, respectively, and these circuits are connected to each other. Then, the light-emitting parts 24 and 34 made of porous silicon convert electronic signals from the circuital function part 22 or 32 into optical signals and emit them to the light-receiving part 35 or 25, which are fitted to these light emitting part 24 or 34, while the receiving parts 25 and 35 convert each optical signal from the light-emitting part 34 or 24 into electronic signals and emit them into the circuital function unit 22 or 32.

公开(公告)号：JPH06264870A

公开(公告)日：1994-09-20

申请号：JP5282293

申请日：1993-03-15

Applicant: TOSHIBA CORP

Inventor： SEKIMURA MASAYUKI ,  IZUMI MAMORU ,  KUDO NORIKO ,  SAKAI TADASHI

IPC: F04B9/00 ,  B81B3/00 ,  B81C1/00 ,  F04B43/04

Abstract: PURPOSE:To provide a micro-pump capable of being manufactured by few machining device, being operated with no piezoelectric element used as a drive source, and having a device structure capable of being miniaturized. CONSTITUTION:A micro-pump controlling the micro-flow of a liquid is constituted of a polyimide resin 2 on a silicone substrate 1 as a main constituting material, a passage 3, a void section, passage walls across the void section, and electrostatic force generating electrodes 4, 5. The passage walls are displaced by the electrostatic force, and a fluid is conveyed when the void section is narrowed and expanded.

公开(公告)号：JPH06213851A

公开(公告)日：1994-08-05

申请号：JP485193

申请日：1993-01-14

Applicant: TOSHIBA CORP

Inventor： SUZUKI TAKEAKI ,  SAKAI TADASHI ,  SHIRATORI MASAYUKI ,  BEPPU TATSURO ,  HIRAKI HIDEAKI

IPC: G01N27/12

Abstract: PURPOSE:To obtain high sensitivity by providing a gas sensing part comprising a semiconductor or metallic porous body with numerous narrow holes formed in a predetermined direction and a pair of electrodes wherein a direction perpendicular to a lengthwise direction of the narrow holes is a current path. CONSTITUTION:A gas sensing part 1 comprising porous silicon is supported on an insulating substrate 2. A heater 3 is attached to a rear of the insulating substrate 2, wherein gas absorption/desorption is facilitated by applying heat with this heater 3. A pair of comb-shaped electrodes 4a, 4b are provided on an upper face 1a of the gas sensing part 1 comprising porous silicon. The comb- shaped electrodes 4a, 4b are formed by evaporating for example a thin metal film on the upper face of the porous silicon. By thus providing a pair of comb- shaped electrodes 4a, 4b on the upper face 1a of the porous silicon, a current path flowing between the electrodes 4a, 4b is in a direction approximately perpendicular to a formation direction of narrow holes on the porous silicon, so chat gas absorption is sensitively influenced.

公开(公告)号：JPH05157730A

公开(公告)日：1993-06-25

申请号：JP32477991

申请日：1991-12-09

Applicant: TOSHIBA CORP

Inventor： YAGI HITOSHI ,  SAKAI TADASHI

IPC: G01N27/28 ,  G01N27/414

Abstract: PURPOSE:To prevent contamination at a sensitive part due to release of a protection film and progress of contamination from a part other than the sensitive part by forming a protection film at a region where a sensor main body containing the sensitive part contacts a liquid to be inspected. CONSTITUTION:A probe-type liquid solution constituent sensor 31 inspects a liquid 3 to be inspected in batch system with an FET type sensor or an electrode-type sensor. A protection film 32 not only coats an ion-sensitive film 5 but also an entire contact part of the liquid to be inspected of a sensor main body 4. As a material of the protection film 32, either of collagen, segmented polyurethane, polypropyne, polyethylene, poly vinyl chloride, silicon rubber, nylon, polyester, polycarbonate, and acryl with an improved adhesion property with the sensor main body 4 which is an inorganic material is desirable and an interface treatment is performed to the sensor 4 before forming a film when adhesion property is in shortage. The liquid to be inspected does not contact those other than the protection film 32, thus preventing the main body of the sensor 4 from being contaminated or the protection film 32 from being released from an interface.

公开(公告)号：JPS6478141A

公开(公告)日：1989-03-23

申请号：JP23477487

申请日：1987-09-21

Applicant: TOSHIBA CORP

Inventor： SAKAI TADASHI

IPC: G01N27/00

Abstract: PURPOSE:To obtain the structure of a sensor which is capable of making stable measurement by providing the shell of a thin inorg. film having through-holes to the surface of a gate insulating film forming sensitive part apart at a certain spacing from said surface. CONSTITUTION:The shell 1 consisting of the thin inorg. film existing in the sensitive part of the sensor, i.e., on the surface of the gate insulating film apart at the certain spacing therefrom and having the through-holes 2 is formed. Silicon nitride, aluminum oxide, and the materials essentially consisting thereof are preferably used as the material of the inorg. film. The diffusion state of a sample soln. on the surface of the gate sensitive part 3 is thereby stably maintained. The output of the sensor is hardly fluctuated and is stably maintained even if the stirring state and flowing state of the sample soln. are nonuniform. The shell 1 can be formed on the element surface with high adhesive strength thereof and the durability is imparted to the shell by using the inorg. material. The sensor is capable of dealing with various sample states by changing the size of the holes 2.

公开(公告)号：JPS6375548A

公开(公告)日：1988-04-05

申请号：JP22073486

申请日：1986-09-18

Applicant: TOSHIBA CORP

Inventor： KIKUCHI NORIMI ,  EGAMI HARUTOSHI ,  ICHIMORI EIKICHI ,  SAKAI TADASHI

IPC: G01N27/12

Abstract: PURPOSE:To obtain a semiconductor gas sensor which has good sensitivity and superior reliability and is easily manufactured by conducting the heat of a heater to a catalyst layer provided on the same surface as the surface of a substrate and heating the layer. CONSTITUTION:An electrode terminal 7 is connected to a detecting circuit, an electrode 6, the catalyst layer 8, and an electrode 6 are connected, and a current for a signal is conducted. When gas contacts the layer 8, the resistance value of the layer 8 varies and the signal current varies in current value, so the detecting circuit detects the presence of the gas. Further, a heater terminal 4 is connected to a power circuit and a current is supplied to the heater 2, which generates heat. The heat of the heater 2 is conducted to the layer 8 through an insulating layer 3 and the layer 8 is heated up to specific temperature. In such a case, the layer 3 is much thin than the substrate 1. The heat conduction from the heater 2 to the layer 8 through the layer 3 is therefore much more excellent than the heat conduction through the substrate 1, and the layer 8 is heated effectively. The heater 2 is covered with the substrate 1 and layer 3, so the heat of the heater 2 is never radiated to the air directly, which is utilized effectively to heat the layer 8.

公开(公告)号：JPS6325542A

公开(公告)日：1988-02-03

申请号：JP16664786

申请日：1986-07-17

Applicant: TOSHIBA CORP

Inventor： SAKAI TADASHI ,  UNO SHIGEKI ,  MURAKAMI KOJI ,  IWAI TAKAYOSHI

IPC: G01N27/00 ,  G01N27/12

Abstract: PURPOSE:To stabilize moisture-sensing characteristic of a moisture sensitive element, by a method wherein a silicon oxide is laminated at a part except for a gate electrode area and a hydrophilic organic compound is filled into a recess of the silicon oxide layer for patterning on a gate electrode. CONSTITUTION:A source region 2 and a drain region 3 are formed on an Si substrate 1. An SiO2 layer 4 and an Si3N4 layer 5 are formed thereon. Thereafter, an SiO2 layer 6 for gate patterning is formed entirely on the layers by sputtering and a portion on the area of a gate electrode 7 is etched away from the SiO2 layer. Then, Cr and Au are evaporated to form a gate electrode 7. Moreover, a hydrophilic material is filled into a recess of the SiO2 layer by a spin coating and is hardened by irradiation of light to form a moisture sensitive film 8 and a gate upper electrode 9 is formed thereon. A drain contact hole 10 and a source contact hole 11 are also formed. Thus, the moisture sensitive film 8 is formed in the recess of the SiO2 layer on the gate electrode thereby stabilizing moisture sensing characteristic with improved tightness in a high- humidity atmosphere.

公开(公告)号：JPS6321545A

公开(公告)日：1988-01-29

申请号：JP16555986

申请日：1986-07-16

Applicant: TOSHIBA CORP

Inventor： SAKAI TADASHI ,  UNO SHIGEKI ,  MURAKAMI KOJI ,  NIITSUMA AKIRA

IPC: G01N27/12

Abstract: PURPOSE:To achieve a higher freedom in the designing of an element along with a higher speed in the development of a sensor, by a method wherein a part of an organic film is heated to remove partially by burning away, evaporation or fusing so that a through hole is formed piercing said film. CONSTITUTION:An acrylic monomer to which a polymerization initiator is added thereto at a rate of several percent is spin coated on a mirror-finished ground ceramic substrate 1 as lower electrode 2 and a heating polymerization is performed. Then, Au is evaporated thereon as upper electrode 4. A proper organic film layer portion on the lower electrode 2 covered with none of the upper electrode 4 is removed by evaporation using a CO2 laser. Here, a power time is adjusted so as not to break the lower electrode 2. After the lower electrode is exposed in this manner, a contact and a lead 6 can be led out of each electrode to complete an element. The process to the formation of the lower electrode is the same as that in the conventional production method. In the subsequent process, the exposed part of the lower electrode is covered with a jig, a seal tape or the like for spin coating.

公开(公告)号：JPS62266450A

公开(公告)日：1987-11-19

申请号：JP10956386

申请日：1986-05-15

Applicant: TOSHIBA CORP

Inventor： SAKAI TADASHI ,  SAITO MASAYUKI ,  AWANO HIROSHI ,  TAMURA NARITAKA

IPC: G01N27/12

Abstract: PURPOSE:To facilitate the mass production of a gas sensor, by a method wherein a combustible ink is applied on the surface of a substrate requiring no gas sensitive film, a gas sensitive film is applied on the surface of the substrate from above the ink and then the work is heated. CONSTITUTION:An opposed electrode 3 is printed on the surface of a substrate 1, while a heater electrode 15 is printed on the back of the substrate 1 and then a heater 11 is printed by connection to the electrode 15. Then, a combustible ink 19 is applied on the surface of a substrate requiring no gas sensitive film 5 by a screen printing and hardened by heat. A gas sensitive film forming agent 5' is applied on the surface of the electrode 3 and the substrate 1 from above the ink 19 thus hardened by heat and when the forming agent 5' reaches a specified thickness, the substrate 1 is heated with the heater 11 formed on the back of the substrate to be baked entirely. In the baking process, the ink 19 thermally decomposes and the film 5 formed on the top thereof scatters from the substrate while a film 5 newly baked is formed at a position where the ink 19 was not applied. Finally, leads 9 and 13 are connected to form a catalyst film 7 on the film 5. Thus, the production process of a gas sensor ends.