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    Low power silicon thermal sensors and microfluidic devices based on the use of porous sealed air cavity technology or microchannel technology
    61.
    发明授权
    Low power silicon thermal sensors and microfluidic devices based on the use of porous sealed air cavity technology or microchannel technology 失效
    基于使用多孔密封空腔技术或微通道技术的低功率硅热传感器和微流体装置

    公开(公告)号：US07233000B2

    公开(公告)日：2007-06-19

    申请号：US10502465

    申请日：2003-01-16

    Applicant: Androula G. Nassiopoulou ,  Grigoris Kaltsas ,  Dimitrios N. Pagonis

    Inventor： Androula G. Nassiopoulou ,  Grigoris Kaltsas ,  Dimitrios N. Pagonis

    IPC: G01J5/20 ,  H01L27/14 ,  H01L31/0248 ,  H01L21/02

    CPC classification number: B81C1/00071 ,  B81B2201/058 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C2201/0114 ,  B81C2201/0115 ,  G01F1/6845 ,  G01K7/028

    Abstract: This invention provides a miniaturized silicon thermal flow sensor with improved characteristics, based on the use of two series of integrated thermocouples (6, 7) on each side of a heater (4), all integrated on a porous silicon membrane (2) on top of a cavity (3). Porous silicon (2) with the cavity (3) underneath provides very good thermal isolation for the sensor elements, so as the power needed to maintain the heater (4) at a given temperature is very low. The formation process of the porous silicon membrane (2) with the cavity (3) underneath is a two-step single electrochemical process. It is based on the fact that when the anodic current is relatively low, we are in a regime of porous silicon formation, while if this current exceeds a certain value we turn into a regime of electropolishing. The process starts at low current to form porous silicon (2) and it is then turned into electropolishing conditions to form the cavity (3) underneath. Various types of thermal sensor devices, such as flow sensors, gas sensors, IR detectors, humidity sensors and thermoelectric power generators are described using the proposed methodology. Furthermore the present invention provides a method for the formation of microfluidic channels (16) using the same technique of porous silicon (17) and cavity (16) formation.

    Abstract translation: 本发明提供了一种基于在加热器（4）的每一侧上使用两个集成的热电偶（6,7）的系列，具有改进的特性的小型化硅热流量传感器，它们全部集成在顶部的多孔硅膜（2）上 的腔（3）。 具有下面的空腔（3）的多孔硅（2）为传感器元件提供了非常好的热隔离，因此将加热器（4）保持在给定温度所需的功率非常低。 多孔硅膜（2）与下面的腔（3）的形成过程是两步单电化学过程。 这是基于以下事实：当阳极电流相对较低时，我们处于多孔硅形成的状态，而如果该电流超过一定值，则我们变成电解抛光的方式。 该工艺以低电流开始形成多孔硅（2），然后转化为电解抛光条件以形成下面的空腔（3）。 使用所提出的方法描述了各种类型的热传感器装置，例如流量传感器，气体传感器，红外探测器，湿度传感器和热电发电机。 此外，本发明提供了使用与多孔硅（17）和空腔（16）相同的技术形成微流体通道（16）的方法。

    Micromechanical component and corresponding production method
    62.
    发明申请
    Micromechanical component and corresponding production method 失效
    微机械部件及相应的生产方式

    公开(公告)号：US20040080004A1

    公开(公告)日：2004-04-29

    申请号：US10450362

    申请日：2003-11-12

    Inventor： Hubert Benzel ,  Heribert Weber ,  Hans Artmann ,  Frank Schaefer

    IPC: H01L027/14

    CPC classification number: B81C1/00182 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C2201/0114 ,  B81C2201/0115 ,  B81C2201/0178

    Abstract: A micromechanical component is described which includes a substrate (1); a monocrystalline layer (10), which is provided above the substrate (1) and which has a membrane area (10a); a cavity (50) that is provided underneath the membrane area (10a); and one or more porous areas (150; 150null), which are provided inside the monocrystalline layer (10) and which have a doping (nnull; pnull) that is higher than that of the surrounding layer (10).

    Abstract translation: 描述了一种微机械部件，其包括基板（1）; 单晶层（10），其设置在所述基板（1）的上方，并且具有膜区域（10a）; 设置在膜区域（10a）下方的空腔（50）; 以及一个或多个多孔区域（150; 150'），其设置在单晶层（10）的内部并且具有比周围层（10）的掺杂（n +; p +）更高的掺杂 ）。

    Surfactant-enhanced protection of micromechanical components from galvanic degradation
    63.
    发明申请
    Surfactant-enhanced protection of micromechanical components from galvanic degradation 有权
    表面活性剂增强了微机械部件对电流退化的保护

    公开(公告)号：US20040065637A1

    公开(公告)日：2004-04-08

    申请号：US10242213

    申请日：2002-09-12

    Applicant: Network Photonics, Inc.

    Inventor： Bevan Staple ,  Jillian Buriak

    IPC: C23F001/00

    CPC classification number: B82Y30/00 ,  B81C1/00476 ,  B81C1/00801 ,  B81C2201/0114 ,  B81C2201/0133 ,  B81C2201/0139 ,  B81C2201/053

    Abstract: A microelectromechanical structure is formed by depositing sacrificial and structural material over a substrate to form a structural layer on a component electrically attached with the substrate. The galvanic potential of the structural layer is greater than the galvanic potential of the component. At least a portion of the structural material is covered with a protective material that has a galvanic potential less than or equal to the galvanic potential of the component. The sacrificial material is removed with a release solution. At least one of the protective material and release solution is surfactanated, the surfactant functionalizing a surface of the component.

    Abstract translation: 通过将牺牲和结构材料沉积在衬底上以在与衬底电连接的部件上形成结构层来形成微机电结构。 结构层的电位大于元件的电位。 结构材料的至少一部分被保护材料覆盖，该保护材料具有小于或等于部件的电位的电位。 牺牲材料用释放溶液除去。 保护材料和释放溶液中的至少一种被表面活性化，表面活性剂对组分的表面进行官能化。

    Nano-structure and method of manufacturing nano-structure
    64.
    发明申请
    Nano-structure and method of manufacturing nano-structure 失效
    纳米结构和制造纳米结构的方法

    公开(公告)号：US20030186514A1

    公开(公告)日：2003-10-02

    申请号：US10391632

    申请日：2003-03-20

    Applicant: CANON KABUSHIKI KAISHA

    Inventor： Aya Imada ,  Tohru Den

    IPC: H01L021/326 ,  H01L021/479

    CPC classification number: H01L21/326 ,  B81B1/00 ,  B81B2201/047 ,  B81C2201/0114 ,  Y10S977/70

    Abstract: A structure having projections is provided. The structure having projections comprises a first projection formed on a first layer containing a first material, and a plurality of second projections formed around the first projection and containing a material capable of being subjected to anodic oxidation.

    Abstract translation: 提供了具有突起的结构。 具有突起的结构包括形成在包含第一材料的第一层上的第一突起和形成在第一突起周围的多个第二突起，并且包含能够进行阳极氧化的材料。

    Method of manufacturing inertial force sensor
    65.
    发明申请
    Method of manufacturing inertial force sensor 审中-公开
    惯性力传感器的制造方法

    公开(公告)号：US20010054316A1

    公开(公告)日：2001-12-27

    申请号：US09929070

    申请日：2001-08-15

    Inventor： Hiroshi Ohji ,  Kazuhiko Tsutsumi ,  Patrick J. French

    IPC: G01P015/00 ,  G01L001/00

    CPC classification number: G01P15/125 ,  B81B2201/025 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81C1/00182 ,  B81C2201/0114 ,  G01L9/0042 ,  G01P15/0802 ,  G01P15/123 ,  G01P2015/0817 ,  G01P2015/0828

    Abstract: An inertia force sensor having a mass body (11) which moves when force is applied to the sensor, at least one holding beam (12) for holding the mass body (11), and an anchor portion (13) for fixing an end portion of the holding beam (12), the sensor being designed to detect inertia force, which acts on the mass body (11), on the basis of a movement of the mass body (11). The sensor is characterized in that the mass body (11) is composed of a free standing structure (9) which is formed by removing an inner part of a silicon substrate (1) therefrom by means of an etching process within a single step, and the anchor portion (13) is composed of at least a part of a main body of the silicon substrate. Because the inertia force sensor is composed of single crystal silicon, its mechanical properties and reliability may be highly improved.

    Abstract translation: 一种惯性力传感器，其具有当向所述传感器施加力时移动的质量体（11），用于保持所述质量体（11）的至少一个保持梁（12）和用于固定所述质量体 所述传感器被设计成基于所述质量体（11）的运动来检测作用在所述质量体（11）上的惯性力。 传感器的特征在于，质量体（11）由通过在一个步骤内的蚀刻工艺除去硅衬底（1）的内部而形成的自立式结构（9）构成，以及 所述锚定部（13）由所述硅基板的主体的至少一部分构成。 由于惯性力传感器由单晶硅组成，因此其机械性能和可靠性可能得到很大改善。

    Capacitive electromechanical transducer device manufacturing method and capacitive electromechanical transducer device
    66.
    发明专利
    Capacitive electromechanical transducer device manufacturing method and capacitive electromechanical transducer device 有权
    电容式电磁传感器装置的制造方法和电容式电磁传感器装置

    公开(公告)号：JP2009296569A

    公开(公告)日：2009-12-17

    申请号：JP2009057263

    申请日：2009-03-11

    Applicant: Canon Inc ,  キヤノン株式会社

    Inventor： CHO KENROKU

    IPC: H04R31/00 ,  B81C1/00 ,  H01L29/84 ,  H04R19/00

    CPC classification number: B06B1/0292 ,  B81B2201/038 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/00476 ,  B81C2201/0114

    Abstract: PROBLEM TO BE SOLVED: To enable a relatively fast and stable etching rate of a sacrificial layer provided between electrodes and increase of device productivity in a capacitive electromechanical transducer device.
    SOLUTION: In a method of manufacturing the capacitive electromechanical transducer device, a first electrode 8 is formed on a substrate 4, an insulating layer 9 which is provided with openings 6 leading to the first electrode is formed on the first electrode 8, and a sacrificial layer is formed on the insulating layer. A vibration film 3 having a second electrode 1 is formed on the sacrificial layer. The vibration film includes an opening through which an etchant enters. The sacrificial layer is etched to form a cavity 10, and the opening through which the etchant enters is sealed. Electrolytic etching is performed that passes current between the first electrode 8 and an externally provided counter electrode via the opening 6 and opening of the sacrificial layer and vibration film.
    COPYRIGHT: (C)2010,JPO&INPIT

    Abstract translation: 要解决的问题：为了实现电极之间提供的牺牲层的相对快速和稳定的蚀刻速率，并且增加电容式机电换能器装置中的器件生产率。 解决方案：在制造电容式机电换能器装置的方法中，在基板4上形成第一电极8，在第一电极8上形成有通向第一电极的开口6的绝缘层9， 并且在绝缘层上形成牺牲层。 在牺牲层上形成具有第二电极1的振动膜3。 振动膜包括蚀刻剂进入的开口。 牺牲层被蚀刻以形成空腔10，蚀刻剂进入的开口被密封。 进行电解蚀刻，其经由开口6在第一电极8和外部提供的对电极之间通过电流并且打开牺牲层和振动膜。 版权所有（C）2010，JPO＆INPIT

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