公开(公告)号：EP2566808B1

公开(公告)日：2017-06-28

申请号：EP11715908.7

申请日：2011-04-14

Applicant: Endress+Hauser GmbH+Co. KG

Inventor： THAM, Anh, Tuan ,  STOLZE, Dieter ,  TEIPEN, Rafael

IPC: B81C1/00

CPC classification number: G01L19/0618 ,  B81C1/00103 ,  B81C2201/0143 ,  G01L7/082 ,  Y10T428/24479

公开(公告)号：EP2382151A4

公开(公告)日：2017-03-22

申请号：EP10736242

申请日：2010-01-20

Applicant: FUJIFILM DIMATIX INC

Inventor： HOISINGTON PAUL A ,  TORREY MARC A

IPC: B81C1/00 ,  B41J2/045 ,  B81B7/02 ,  H01L21/60

CPC classification number: B81C1/00904 ,  B81B2201/058 ,  B81C1/00119 ,  B81C2201/0143 ,  B81C2201/019

Abstract: A MEMS device is described that has a body with a component bonded to the body. The body has a main surface and a side surface adjacent to the main surface and smaller than the main surface. The body is formed of a material and the side surface is formed of the material and the body is in a crystalline structure different from the side surface. The body includes an outlet in the side surface and the component includes an aperture in fluid connection with the outlet.

Abstract translation: 描述了具有结合到身体的部件的主体的MEMS装置。 主体具有与主表面相邻并且小于主表面的主表面和侧表面。 主体由材料形成，侧表面由材料形成，并且主体是与侧面不同的晶体结构。 主体包括侧表面中的出口，并且部件包括与出口流体连接的孔。

公开(公告)号：EP2795411A2

公开(公告)日：2014-10-29

申请号：EP12812966.5

申请日：2012-12-20

Applicant: The Swatch Group Research and Development Ltd.

Inventor： HESSLER, Thierry ,  DALLA PIAZZA, Silvio

IPC: G04F5/06 ,  G04G17/02 ,  B81C1/00 ,  G04B17/06 ,  G04C3/12 ,  G02B6/12 ,  B23K26/00 ,  G04B17/34

CPC classification number: H03H9/19 ,  B23K26/0057 ,  B81B2201/0271 ,  B81B2203/0118 ,  B81C1/00595 ,  B81C2201/0143 ,  F21V17/02 ,  G04B17/066 ,  G04B17/345 ,  G04C3/12 ,  G04F5/063 ,  G04G17/02 ,  H01L41/0475 ,  H01L41/332 ,  H03H9/215

Abstract: The present invention relates to a method of fabricating a resonator in a substrate, characterized in that it comprises the following steps: a) modifying the structure of at least one zone of the substrate so as to render said at least one zone more selective; b) etching said at least zone so as to selectively fabricate said resonator.

Abstract translation: 该方法包括使用激光来修改衬底区域的结构，以使该区域更具选择性。 该区域被蚀刻以选择性地制造包括基部（302）的谐振器（300），平行臂（304）从该基部延伸，其中每个臂呈现上表面和下表面。 在臂的一个面上形成有凹部310。 谐振器从衬底释放，其中衬底由单晶材料，多晶材料，聚合物和无定形材料如陶瓷或玻璃制成。 谐振器还包括独立权利要求。

公开(公告)号：EP2382151A2

公开(公告)日：2011-11-02

申请号：EP10736242.8

申请日：2010-01-20

Applicant: Fujifilm Dimatix, Inc.

Inventor： HOISINGTON, Paul A. ,  TORREY, Marc A.

IPC: B81C1/00 ,  B81B7/02 ,  H01L21/60 ,  B41J2/045

CPC classification number: B81C1/00904 ,  B81B2201/058 ,  B81C1/00119 ,  B81C2201/0143 ,  B81C2201/019

Abstract: A MEMS device is described that has a body with a component bonded to the body. The body has a main surface and a side surface adjacent to the main surface and smaller than the main surface. The body is formed of a material and the side surface is formed of the material and the body is in a crystalline structure different from the side surface. The body includes an outlet in the side surface and the component includes an aperture in fluid connection with the outlet.

公开(公告)号：EP2310911A1

公开(公告)日：2011-04-20

申请号：EP09793879.9

申请日：2009-07-03

Applicant: The Provost, Fellows and Scholars of the College of the Holy and Undivided Trinity of Queen Elizabeth near Dublin

Inventor： CROSS, Graham L. W. ,  McKENZIE, Warren ,  PETHICA, John B.

IPC: G03F7/11 ,  G03F7/00 ,  B81C1/00 ,  H01L21/033

CPC classification number: G03F7/11 ,  B81C1/00634 ,  B81C2201/0143 ,  B81C2201/0159 ,  B81C2201/036 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L21/0337

Abstract: The invention provides a system and process of patterning structures on a carbon based surface comprising exposing part of the surface to an ion flux, such that material properties of the exposed surface are modified to provide a hard mask effect on the surface. A further step of etching unexposed parts of the surface forms the structures on the surface. The inventors have discovered that by controlling the ion exposure, alteration of the surface structure at the top surface provides a mask pattern, without substantially removing any material from the exposed surface. The mask allows for subsequent ion etching of unexposed areas of the surface leaving the exposed areas raised relative to the unexposed areas thus manufacturing patterns onto the surface. For example, a Ga+ focussed ion beam exposes a pattern onto a diamond surface which produces such a pattern after its exposure to a plasma etch. The invention is particularly suitable for patterning of clear well-defined structures down to nano-scale dimensions.

公开(公告)号：EP2159558A1

公开(公告)日：2010-03-03

申请号：EP08015174.9

申请日：2008-08-28

Applicant: Sensirion AG

Inventor： Bühler, Johannes ,  Mayer, Felix ,  Streiff, Matthias ,  Hummel, Rene ,  Sunier, Robert

IPC: G01L9/00 ,  B81C1/00

CPC classification number: G01L9/0073 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81B2203/0353 ,  B81C1/00087 ,  B81C1/00801 ,  B81C2201/0143 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/00014

Abstract: A differential pressure sensor comprises a membrane (6) arranged over a cavity (6) on a semiconductor substrate (1). A lid layer (10) is arranged at the top side of the device and comprises an access opening (13a) for providing access to the top side of the membrane (6). A channel (9) extends laterally from the cavity (6) and intersects with a bore (15). The bore (15) is formed by laser drilling from the bottom side of the substrate (1) and provides access to the bottom side of the membrane (6). The bore (15) extends all through the substrate (1) and optionally into the lid layer (10).

Abstract translation: 差压传感器包括布置在半导体衬底（1）上的空腔（6）上的膜（6）。 盖层（10）布置在装置的顶侧，并且包括用于提供进入膜（6）的顶侧的进入开口（13a）。 通道（9）从空腔（6）横向延伸并与孔（15）相交。 所述孔（15）通过从所述基底（1）的底侧进行激光钻孔形成，并提供对所述膜（6）的底侧的通路。 孔（15）全部穿过基底（1）并任选地延伸到盖层（10）中。

公开(公告)号：EP1659093A3

公开(公告)日：2008-01-16

申请号：EP05257224.5

申请日：2005-11-23

Applicant: Hewlett-Packard Development Company, L.P.

Inventor： Ching, Kiong Chin ,  Chia, Wai Tuck ,  Tan, Kee Cheong ,  Zhu, Lei

IPC: B81C1/00

CPC classification number: H01L21/268 ,  B81C1/00492 ,  B81C2201/0143 ,  H01L21/2633

Abstract: In a method of manufacturing a microstructure that requires a first material (6) and a second material (8) attached together and a laser system for producing a laser beam, the first material exhibiting an ablation threshold that does not exceed a predetermined ablation fluence of the laser beam and the second material exhibiting a second ablation threshold that exceeds the predetermined ablation fluence, a removal process comprises removing (16) a portion of the first material to leave a remnant thereof at an interface of the two materials and then, ablating (24) the remnant material using the laser beam at the predetermined ablation fluence to remove the remnant material. The process of selecting the first of the two materials is based on the predetermined ablation fluence of the laser beam, and the selection of a laser system is based on the respective ablation thresholds of the first and second materials.

公开(公告)号：EP1855987A1

公开(公告)日：2007-11-21

申请号：EP05719003.5

申请日：2005-02-21

Applicant: Consiglio Nazionale delle Ricerche - INFM Istituto Nazionale per la Fisica della Materia

Inventor： TORMEN, Massimo ,  CARPENTIERO, Alessandro ,  DI FABRIZIO, Enzo Mario

IPC: B81C1/00 ,  C03B11/08 ,  G02B3/00

CPC classification number: B81C99/009 ,  B81B2207/056 ,  B81C99/0085 ,  B81C2201/0132 ,  B81C2201/0143 ,  B82Y20/00 ,  G02B3/0012

Abstract: A method is described for forming three-dimensional micro ­and nanostructures, based on the structuring of a body of material by means of a mould having an impression area which reproduces the said three-dimensional structure in negative form, characterized in that it comprises the operations of: - providing a mould comprising a substrate of a material which can undergo isotropic chemical etching, in which the said impression area is to be formed; defining an etching pattern on (in) the substrate, comprising a plurality of etching areas having zero-, uni- or bidimensional extension, which can be reached by an etching agent; and - carrying out a process of isotropic chemical etching of the substrate from the said etching areas for a corresponding predetermined time, so as to produce cavities which in combination make up the aforesaid impression area. This method is advantageously used in the fabrication of sets of microlenses with a convex three-dimensional structure, of the refractive or hybrid refractive/diffractive type, for forming images on different focal planes.

公开(公告)号：TW201810430A

公开(公告)日：2018-03-16

申请号：TW106121686

申请日：2017-06-29

Applicant: 康寧公司 ,  CORNING INCORPORATED

Inventor： 萊維斯克二世 丹尼爾韋恩 ,  LEVESQUE JR., DANIEL WAYNE ,  皮耶希 卡列特安卓 ,  PIECH, GARRETT ANDREW ,  舍利 艾利克布魯斯 ,  SHOREY, ARIC BRUCE

IPC: H01L21/311 ,  H01L21/48 ,  H01L23/15 ,  H01L23/498

CPC classification number: H01L23/481 ,  B81B7/0006 ,  B81B2207/096 ,  B81C1/00301 ,  B81C2201/013 ,  B81C2201/0143 ,  B81C2203/031 ,  H01L21/268 ,  H01L21/30604 ,  H01L21/31105 ,  H01L21/31111 ,  H01L21/486 ,  H01L21/6835 ,  H01L21/76251 ,  H01L21/76877 ,  H01L21/76898 ,  H01L23/15 ,  H01L23/49827 ,  H01L2221/68359

Abstract: 製程包含接合半導體晶圓與無機晶圓。半導體晶圓不會讓無機晶圓可穿透的光波長穿透。接合後，利用雷射，在無機晶圓中形成破壞軌跡，雷射發射光波長。利用蝕刻擴大無機晶圓的破壞軌跡，以形成貫通無機晶圓的孔。孔終止於半導體晶圓與無機晶圓間的界面。亦提供物件，包含半導體晶圓接合至無機晶圓。半導體晶圓不會讓無機晶圓可穿透的光波長穿透。無機晶圓具有孔形成貫通無機晶圓。孔終止於半導體晶圓與無機晶圓間的界面。

Abstract in simplified Chinese: 制程包含接合半导体晶圆与无机晶圆。半导体晶圆不会让无机晶圆可穿透的光波长穿透。接合后，利用激光，在无机晶圆中形成破坏轨迹，激光发射光波长。利用蚀刻扩大无机晶圆的破坏轨迹，以形成贯通无机晶圆的孔。孔终止于半导体晶圆与无机晶圆间的界面。亦提供对象，包含半导体晶圆接合至无机晶圆。半导体晶圆不会让无机晶圆可穿透的光波长穿透。无机晶圆具有孔形成贯通无机晶圆。孔终止于半导体晶圆与无机晶圆间的界面。

公开(公告)号：TWI522200B

公开(公告)日：2016-02-21

申请号：TW100126365

申请日：2011-07-26

Applicant: 濱松赫德尼古斯股份有限公司 ,  HAMAMATSU PHOTONICS K.K.

Inventor： 下井英樹 ,  SHIMOI, HIDEKI ,  久嶋浩之 ,  KYUSHIMA, HIROYUKI ,  荒木佳祐 ,  ARAKI, KEISUKE

IPC: B23K26/36

CPC classification number: H01L23/481 ,  B23K26/006 ,  B23K26/382 ,  B23K26/384 ,  B23K26/40 ,  B23K2203/50 ,  B81B2203/0353 ,  B81B2203/0384 ,  B81C1/00087 ,  B81C2201/0143 ,  H01L21/30608 ,  H01L21/76898 ,  H01L2924/0002 ,  H01L2924/00012 ,  H01L2924/00