公开(公告)号：US20020078709A1

公开(公告)日：2002-06-27

申请号：US09942779

申请日：2001-08-31

Applicant: TOSOH CORPORATION

Inventor： Hiroya Nagata ,  Masayuki Kudo ,  Koji Tsukuma ,  Yoshikazu Kikuchi ,  Tomoyuki Akiyama

IPC: C03B019/00

CPC classification number: C03C3/06 ,  C03B19/09 ,  C03C11/007 ,  C03C2201/24 ,  C03C2201/80 ,  C03C2203/10 ,  Y10S65/08 ,  Y10T428/1317 ,  Y10T428/249969

Abstract: An opaque silica glass article comprising a transparent portion and an opaque portion, wherein the opaque portion has an apparent density of 1.70-2.15 g/cm3 and contains 5null104-5null106 bubbles per cm3, said bubbles having an average diameter of 10-100 nullm; and the transparent portion has an apparent density of 2.19-2.21 g/cm3 and the amount of bubbles having a diameter of at least 100 nullm in the transparent portion is not more than 1null103 per cm3. The opaque silica glass article is made by a process wherein a mold is charged with a raw material for forming the opaque portion, which is a mixture comprising a silica powder with a small amount of a silicon nitride powder, and a raw material for forming the transparent portion so that the two raw materials are located in the positions corresponding to the opaque and the transparent portions, respectively, of the silica glass article to be produced; and the raw materials are heated in vacuo to be thereby vitrified.

Abstract translation: 一种不透明的玻璃制品，包括透明部分和不透明部分，其中不透明部分的表观密度为1.70-2.15g / cm 3，并且每立方厘米含有5×10 4〜5×10 6个气泡，所述气泡的平均直径为10〜100μm; 并且透明部分的表观密度为2.19-2.21g / cm 3，透明部分中直径至少为100μm的气泡量不超过1×103 / cm3。 不透明的石英玻璃制品通过以下方法制造，其中模具装有用于形成不透明部分的原料，该不透明部分是包含少量氮化硅粉末的二氧化硅粉末的混合物，以及用于形成 透明部分，使得两个原料分别位于与待制造的石英玻璃制品的不透明部分和透明部分相对应的位置; 并将原料真空加热，从而玻璃化。

公开(公告)号：US06405563B1

公开(公告)日：2002-06-18

申请号：US09942779

申请日：2001-08-31

Applicant: Hiroya Nagata ,  Masayuki Kudo ,  Koji Tsukuma ,  Yoshikazu Kikuchi ,  Tomoyuki Akiyama

Inventor： Hiroya Nagata ,  Masayuki Kudo ,  Koji Tsukuma ,  Yoshikazu Kikuchi ,  Tomoyuki Akiyama

IPC: C03B1900

CPC classification number: C03C3/06 ,  C03B19/09 ,  C03C11/007 ,  C03C2201/24 ,  C03C2201/80 ,  C03C2203/10 ,  Y10S65/08 ,  Y10T428/1317 ,  Y10T428/249969

Abstract: An opaque silica glass article comprising a transparent portion and an opaque portion, wherein the opaque portion has an apparent density of 1.70-2.15 g/cm3 and contains 5×104-5×106 bubbles per cm3, said bubbles having an average diameter of 10-100 &mgr;m; and the transparent portion has an apparent density of 2.19-2.21 g/cm3 and the amount of bubbles having a diameter of at least 100 &mgr;m in the transparent portion is not more than 1×103 per cm. The opaque silica glass article is made by a process wherein a mold is charged with a raw material for forming the opaque portion, which is a mixture comprising a silica powder with a small amount of a silicon nitride powder, and a raw material for forming the transparent portion so that the two raw materials are located in the positions corresponding to the opaque and the transparent portions, respectively, of the silica glass article to be produced; and the raw materials are heated in vacuo to be thereby vitrified.

Abstract translation: 一种不透明的玻璃制品，包括透明部分和不透明部分，其中不透明部分的表观密度为1.70-2.15g / cm 3，并且每立方厘米含有5×10 4〜5×10 6个气泡，所述气泡的平均直径为10〜100μm; 并且透明部分的表观密度为2.19-2.21g / cm 3，透明部分中直径至少为100μm的气泡量不超过1×10 3 / cm。 不透明的石英玻璃制品通过以下方法制造，其中模具装有用于形成不透明部分的原料，该不透明部分是包含少量氮化硅粉末的二氧化硅粉末的混合物，以及用于形成 透明部分，使得两个原料分别位于与待制造的石英玻璃制品的不透明部分和透明部分相对应的位置; 并将原料真空加热，从而玻璃化。

公开(公告)号：US06399526B2

公开(公告)日：2002-06-04

申请号：US09871979

申请日：2001-06-04

Applicant: Hiroshi Tomita ,  Tsuneo Ishii ,  Chie Hongo

Inventor： Hiroshi Tomita ,  Tsuneo Ishii ,  Chie Hongo

IPC: C03C306

CPC classification number: C03B32/00 ,  C03B20/00 ,  C03C3/06 ,  C03C23/002 ,  C03C2201/20 ,  C03C2201/24 ,  C03C2201/26 ,  C03C2201/32 ,  C03C2203/10 ,  C03C2203/50 ,  Y10S501/905

Abstract: A quartz glass which would not become a source for the contamination even if it contains metallic impurities. This quartz glass includes a region where a concentration of E′ center as measured by means of an. electron spin resonance analysis is 3×1019 cm−3 or more. This quartz glass can be manufactured by a method including the steps of forming an initial quartz glass by melting and quenching a raw material for quartz glass, and implanting therein an ion, which is capable of entering into an SiO2 network of the initial quartz glass and substantially incapable of externally diffusing, to increase a concentration of E′ center in at least part of the initial quartz glass. This quartz glass can be manufactured by a method making use of a quartz glass raw material containing 0.01 to 0.1% by weight of-silicon, by a method of irradiating ultraviolet ray to the initial quartz glass, or by a method of giving an abrasion damage to the surface of the initial quartz glass by means of sand blast.

Abstract translation: 即使含有金属杂质，也不会成为污染源的石英玻璃。 该石英玻璃包括通过以下方法测量的E'中心浓度的区域。 电子自旋共振分析为3×10 19 cm -3以上。 该石英玻璃可以通过以下方法制造：包括以下步骤：通过熔融和淬火用于石英玻璃的原料形成初始石英玻璃，并且在其中注入能够进入初始石英玻璃的SiO 2网络的离子，以及 基本上不能进行外部扩散，以增加至少部分初始石英玻璃中的E'中心的浓度。 该石英玻璃可以通过使用含有0.01〜0.1重量％硅的石英玻璃原料的方法，通过向初始石英玻璃照射紫外线的方法或通过给予磨损损伤的方法来制造 通过喷砂处理到初始石英玻璃的表面。

公开(公告)号：EP1868951B1

公开(公告)日：2011-03-30

申请号：EP06743228.6

申请日：2006-03-30

Applicant: Heraeus Quarzglas GmbH & Co. KG

Inventor： KUEHN, Bodo ,  POGGE, Tobias ,  TROMMER, Martin ,  WEBER, Jürgen ,  KIRST, Ulrich ,  WERDECKER, Waltraud

IPC: C03C3/06 ,  C03B19/14 ,  H01L21/00

CPC classification number: C03C3/06 ,  C03B19/06 ,  C03B19/09 ,  C03B32/00 ,  C03B2201/07 ,  C03B2201/075 ,  C03B2201/24 ,  C03B2201/32 ,  C03C15/00 ,  C03C19/00 ,  C03C23/0025 ,  C03C23/006 ,  C03C2201/11 ,  C03C2201/12 ,  C03C2201/23 ,  C03C2201/24 ,  C03C2201/32 ,  C03C2201/50 ,  C03C2203/54 ,  C30B25/12 ,  C30B31/14 ,  C30B35/00 ,  Y02P40/57

Abstract: An ideal quartz glass for a wafer holder for application in an etching environment is characterised both by high purity and also a high dry etching resistance. According to the invention, such a quartz glass may be achieved, whereby the quartz glass is doped with nitrogen, at least in a region near the surface, has an average content of metastable hydroxy groups of less than 30 wt. ppm, the fictive temperature is less than 1250 °C and the viscosity at a temperature of 1200 °C is at least 1013 dPas. A commercial method for production of such a quartz glass comprises the following method steps: fusion of a SiO2 raw material to give a quartz glass blank, whereby the SiO2 raw material or the quartz glass blank is subjected to a dehydration process, heating of the SiO2 raw material or the quartz glass blank to a nitriding temperature in the range between 1050 °C and 1850 °C under an atmosphere containing ammonia, a temperature treatment, by means of which the quartz glass of the quartz glass blank is brought to a fictive temperature of 1250 °C or less and a surface treatment of the quartz glass blank to give the quartz glass holder.

公开(公告)号：EP2061726B1

公开(公告)日：2010-11-10

申请号：EP07803192.9

申请日：2007-09-04

Applicant: Heraeus Quarzglas GmbH & Co. KG ,  Shin-Etsu Quartz Products Co.,Ltd.

Inventor： WEBER, Juergen ,  SATO, Tatsuhiro ,  SCHNEIDER, Ralf ,  HOFMANN, Achim ,  GEBAUER, Christian

IPC: C03C3/06

CPC classification number: C03C3/06 ,  C03B19/06 ,  C03B19/066 ,  C03B20/00 ,  C03B2201/07 ,  C03B2201/075 ,  C03B2201/24 ,  C03B2201/34 ,  C03B2201/36 ,  C03C4/20 ,  C03C2201/23 ,  C03C2201/24 ,  C03C2201/3411 ,  C03C2201/3435 ,  C03C2203/10 ,  C03C2203/54

Abstract: The invention starts from a known component of quartz glass for use in semiconductor manufacture, which component at least in a near-surface region shows a co-doping of a first dopant and of a second oxidic dopant, said second dopant containing one or more rare-earth metals in a concentration of 0.1-3% by wt. each (based on the total mass of SiO2 and dopant). Starting from this, to provide a quartz glass component for use in semiconductor manufacture in an environment with etching action, which component is distinguished by both high purity and high resistance to dry etching and avoids known drawbacks caused by co-doping with aluminum oxide, it is suggested according to the invention that the first dopant should be nitrogen and that the mean content of metastable hydroxyl groups of the quartz glass is less than 30 wtppm.

公开(公告)号：EP1894896B1

公开(公告)日：2010-03-31

申请号：EP07114836.5

申请日：2007-08-23

Applicant: Heraeus Quarzglas GmbH & Co. KG ,  SHIN-ETSU QUARTZ PRODUCTS CO., LTD.

Inventor： Sato, Tatsuhiro

IPC: C03B19/01 ,  C03B19/09 ,  C03C3/06 ,  C03C3/112 ,  C03C4/20 ,  C03C6/04 ,  C03C6/06

CPC classification number: C03C1/00 ,  C03B19/063 ,  C03B32/005 ,  C03B2201/12 ,  C03B2201/20 ,  C03B2201/24 ,  C03B2201/36 ,  C03C3/06 ,  C03C3/112 ,  C03C4/20 ,  C03C2201/12 ,  C03C2201/23 ,  C03C2201/24 ,  C03C2201/26 ,  C03C2201/32 ,  C03C2201/3411 ,  C03C2201/3435 ,  C03C2201/36

公开(公告)号：EP2061726A2

公开(公告)日：2009-05-27

申请号：EP07803192.9

申请日：2007-09-04

Applicant: Heraeus Quarzglas GmbH & Co. KG ,  Shin-Etsu Quartz Products Co.,Ltd.

Inventor： WEBER, Juergen ,  SATO, Tatsuhiro ,  SCHNEIDER, Ralf ,  HOFMANN, Achim ,  GEBAUER, Christian

IPC: C03C3/06

CPC classification number: C03C3/06 ,  C03B19/06 ,  C03B19/066 ,  C03B20/00 ,  C03B2201/07 ,  C03B2201/075 ,  C03B2201/24 ,  C03B2201/34 ,  C03B2201/36 ,  C03C4/20 ,  C03C2201/23 ,  C03C2201/24 ,  C03C2201/3411 ,  C03C2201/3435 ,  C03C2203/10 ,  C03C2203/54

Abstract: The invention starts from a known component of quartz glass for use in semiconductor manufacture, which component at least in a near-surface region shows a co-doping of a first dopant and of a second oxidic dopant, said second dopant containing one or more rare-earth metals in a concentration of 0.1-3% by wt. each (based on the total mass of SiO2 and dopant). Starting from this, to provide a quartz glass component for use in semiconductor manufacture in an environment with etching action, which component is distinguished by both high purity and high resistance to dry etching and avoids known drawbacks caused by co-doping with aluminum oxide, it is suggested according to the invention that the first dopant should be nitrogen and that the mean content of metastable hydroxyl groups of the quartz glass is less than 30 wtppm.

公开(公告)号：EP1232125B1

公开(公告)日：2005-08-31

申请号：EP00976564.5

申请日：2000-10-10

Applicant: Corning Incorporated

Inventor： AKWANI, Ikerionwu, A. ,  BELLMAN, Robert, A. ,  GRANDI, Thomas, P. ,  SACHENIK, Paul, A.

IPC: C03C3/04 ,  C03C3/11 ,  C01B21/082 ,  C03B19/14

CPC classification number: C01B21/0821 ,  C01P2006/32 ,  C01P2006/60 ,  C03B19/1453 ,  C03B32/00 ,  C03B2201/24 ,  C03B2201/31 ,  C03C3/045 ,  C03C3/111 ,  C03C2201/24 ,  C03C2201/31 ,  Y10T428/265

公开(公告)号：EP1868951A1

公开(公告)日：2007-12-26

申请号：EP06743228.6

申请日：2006-03-30

Applicant: Heraeus Quarzglas GmbH & Co. KG

Inventor： KUEHN, Bodo ,  POGGE, Tobias ,  TROMMER, Martin ,  WEBER, Jürgen ,  KIRST, Ulrich ,  WERDECKER, Waltraud

IPC: C03C3/06 ,  C03B19/14 ,  H01L21/00

CPC classification number: C03C3/06 ,  C03B19/06 ,  C03B19/09 ,  C03B32/00 ,  C03B2201/07 ,  C03B2201/075 ,  C03B2201/24 ,  C03B2201/32 ,  C03C15/00 ,  C03C19/00 ,  C03C23/0025 ,  C03C23/006 ,  C03C2201/11 ,  C03C2201/12 ,  C03C2201/23 ,  C03C2201/24 ,  C03C2201/32 ,  C03C2201/50 ,  C03C2203/54 ,  C30B25/12 ,  C30B31/14 ,  C30B35/00 ,  Y02P40/57

Abstract: An ideal quartz glass for a wafer holder for application in an etching environment is characterised both by high purity and also a high dry etching resistance. According to the invention, such a quartz glass may be achieved, whereby the quartz glass is doped with nitrogen, at least in a region near the surface, has an average content of metastable hydroxy groups of less than 30 wt. ppm, the fictive temperature is less than 1250 °C and the viscosity at a temperature of 1200 °C is at least 1013 dPas. A commercial method for production of such a quartz glass comprises the following method steps: fusion of a SiO2 raw material to give a quartz glass blank, whereby the SiO2 raw material or the quartz glass blank is subjected to a dehydration process, heating of the SiO2 raw material or the quartz glass blank to a nitriding temperature in the range between 1050 °C and 1850 °C under an atmosphere containing ammonia, a temperature treatment, by means of which the quartz glass of the quartz glass blank is brought to a fictive temperature of 1250 °C or less and a surface treatment of the quartz glass blank to give the quartz glass holder.

公开(公告)号：EP0909743B2

公开(公告)日：2006-06-07

申请号：EP98119541.5

申请日：1998-10-15

Applicant: TOSOH CORPORATION ,  Tosoh Quartz Corporation

Inventor： Nagata, Hiroya ,  Kudo, Masayuki, 206, Tosoh Corporation Machida-Ryo ,  Tsukuma, Koji ,  Kikuchi, Yoshikazu ,  Akiyama, Tomoyuki

IPC: C03C3/06 ,  C03C11/00

CPC classification number: C03B19/09 ,  C03C3/06 ,  C03C11/007 ,  C03C2201/24 ,  C03C2201/80 ,  C03C2203/10 ,  Y10S65/08 ,  Y10T428/1317 ,  Y10T428/249969