Abstract:
PROBLEM TO BE SOLVED: To provide a dielectric composition capable of improving the deterioration of the amount of emitted electrons with time elapsing of an electron emitting element. SOLUTION: The dielectric composition is composed of a PMN-PZ-PT ternary solid solution composition represented by Pb x Bi p (Mg y/3 Nb 2/3 ) a Ti b-z M z Zr c O 3 as a major component and contains Ni equivalent to NiO content of 0.05-2.0 wt.%. In the formula, x is 0.95≤x≤1.05, p is 0.02≤p≤0.1, and y is 0.8≤y≤1.0; (a, b, c) are decimals within a range surrounded by 5 points, i.e. (0.550, 0.425, 0.025), (0.550, 0.150, 0.300), (0.100, 0.150, 0.750), (0.100, 0.525, 0.375), and (0.375, 0.425, 0.200); z is 0.02≤z≤0.10; and M is at least one kind selected from Nb, Ta, Mo, and W. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide a display device which is manufactured easily and inexpensively, stabilizes the electron emission characteristics for every solid, and establishes optionally the shape of the electron beam. SOLUTION: The PED is constituted such that signal wires 18a, 18b and scanning wires 18c, 18d are formed in a matrix form on the inner surface 4a of a rear substrate, and a PZT film 24 as the electron emission member corresponding to each intersecting point thereof are formed. The PZT film 24 emits an electron beam in a cross-sectional shape depending on the film shape by applying a voltage between element electrodes 21, 22 connected to the wires. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide a new ferroelectric electron ray source and an electron ray formation method in which electron ray is formed sufficiently even in the case the dielectric constant of the ferroelectric is small and voltage resistance is high. SOLUTION: A comb shape electrode 12 is formed on a main surface 11A of a ferroelectric thin film 11 and a flat electrode 13 is formed on the rear face 11B. Then, the main surface 11A of the ferroelectric film 11 is changed to have a semiconductivity. Then, in the state where the assembly comprising the ferroelectric film 11, the comb shape electrode 12, and the flat electrode 13 is arranged in a vacuum atmosphere, a negative voltage is impressed on the comb shape electrode 12 and the ferroelectric film 11 is polarized, and next, a negative impulse voltage is impressed on the flat electrode 13, and an electron ray is emitted from the main surface 11A of the ferroelectric film 11. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract:
Disclosed are methods and devices suitable for generating electron beams and pulses of radiation. Specifically, in some disclosed embodiments, multiple emitting electrodes of a ferroelectric emitter are sequentially activated, generating a relatively long electron beam pulse that is substantially a series of substantially consecutive short electron beam pulses generated by the sequentially-activated individual emitting electrodes.
Abstract:
Provided is a piezoelectric-film-type electron emitter which enables suppression of reduction of electron emission quantity due to repeated use thereof, and which exhibits high durability. The electron emitter includes a substrate; an emitter section formed of a dielectric material; a first electrode formed on the top surface of the emitter section; and a second electrode formed on the bottom surface of the emitter section. The dielectric material forming the emitter section contains a dielectric composition having an electric-field-induced strain (i.e., percent deformation under application of an electric field of 4 kV/mm, as measured in a direction perpendicular to the electric field) of 0.07% or less.
Abstract:
A dielectric device of higher performance is provided. An electron emitter, to which the dielectric device is applied is provided with: an emitter including a dielectric; and an upper electrode and a lower electrode to which drive voltage is applied in order to emit electrons. The emitter is formed by the aerosol deposition method or the sol impregnation method, and the surface roughness of the upper surface thereof is controlled in the range from 0.1 to 3 in Ra.
Abstract:
Provided are a dielectric element and an electron emitter exhibiting suppressed deterioration of element characteristics, which deterioration would otherwise occur with repeated use thereof. An electron emitter (i.e., a dielectric element) of the present invention is configured so as to operate through application of a predetermined driving electric field to an emitter layer. The emitter layer is formed of a dielectric layer containing, as a primary component, a PMN-PT-PZ ternary solid solution composition, and having a Curie temperature Tc (° C.) falling within a range of 60≦Tc≦150.
Abstract:
Provided is a piezoelectric-film-type electron emitter of high durability exhibiting suppressed reduction in electron emission quantity, which reduction would otherwise occur with repeated use of the electron emitter. The electron emitter includes a substrate, a lower electrode, an emitter layer, and an upper electrode. The upper electrode has a plurality of openings, and an emitter section located on the top surface of the emitter layer is exposed through the openings to a reduced-pressure atmosphere. The electron emitter is configured so that when a pulse drive voltage Va is applied between the lower electrode and the upper electrode, electrons are accumulated on the emitter section, and then the electrons are emitted toward the reduced-pressure atmosphere. The emitter layer contains a primary component (i.e., a ferroelectric composition) and an additional component. The additional component contains a transition metal oxide of high oxidation number which can serve as an oxidizing agent by being converted into an oxide of the transition metal of lower oxidation number.